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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 559 records · Page 31
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NASA NTRS1978

Proton-associated alpha-irradiation in the early solar system - A possible K-41 anomaly

It is shown that alpha-particle fluences associated with proton fluences sufficiently high to produce the Al-correlated excess of Mg-26 found in the Allende meteorite produce equally significant amounts of Ca-41. The Ca-41 is produced by Ar-38(alpha,n)Ca-41 reactions occurring in the gas and condenses into the Ca-Al-rich grains forming at that time. After the decay of Ca-41, these grains will have a Ca-correlated excess of K-41. The question is considered whether the proposed scheme is capable of producing an observable excess of K-41. A calculation is conducted of the magnitude of the K-41 excess expected to be found in Ca-Al-rich grains for various ratios of Ca/K by developing an irradiation-condensation model. It is shown that on the basis of the currently available data it is not possible to come to firm conclusions regarding the validity of the irradiation model.

Dwek, E.↗
NASA NTRS1977

Ionizing radiation effects on SBP9900 microprocessor

The radiation resistance of a 16-bit microprocessor based on integrated injection logic technology has been investigated. Cumulative fluences of 10 to the 12th power to 10 to the 14th power e/sq cm were used in the radiation-resistance study. Complete failure of the microprocessor was noted at a fluence level of 1.2 times 10 to the 14th power e/sq cm. Though the radiation resistance of the microprocessor makes it suited for space applications, reductions in the power dissipation of the device are needed.

Stanley, A. G.↗
NASA NTRS1979

Radiation effects in GaAs AMOS solar cells

The results of radiation damage produced in AMOS (Antireflecting-Metal-Oxide-Semiconductor) cells with Sb2O3 interfacial oxide layers by 1-MeV electrons are presented. The degradation properties of the cells as a function of irradiation fluences were correlated with the changes in their spectral response, C-V, dark forward, and light I-V characteristics. The active n-type GaAs layers were grown by the OM-CVD technique, using sulfur doping in the range between 3 x 10 to the 15th power and 7 x 10 to the 16th power/cu cm. At a fluence of 10 to the 16th power e/sq cm, the low-doped samples showed I sub sc degradation of 8% and V sub oc degradation of 8%. The high-doped samples showed I sub sc and V sub oc degradation of 32% and 1%, respectively, while the fill factor remained relatively unchanged for both. AMOS cells with water vapor-grown interfacial layers showed no significant change in V sub oc.

Shin, B. K.↗
NASA NTRS1978

Effects of proton irradiation on a gas phase in which condensation takes place. I Negative Mg-26 anomalies and Al-26

In the present paper, isotopic effects in magnesium generated in a proton-irradiated gas phase are examined, taking only (p,n), (p,d), and (p, alpha) reactions in magnesium, aluminum, and silicon into consideration. In the presence of proton radiation, the three elements are 'removed' from the gas phase by condensation. It is required that a value of Al-26/Al-27 greater than 6 times 10 to the -5th must be reached, consistent with the value deduced by Lee Papanastassiou, and Wasserburg (1976) from their studies of the Allende meteorite. The calculations show that fast aluminum condensation reduces the required proton fluence substantially, that a significant fraction of aluminum remains uncondensed when the above value of the Al-26/Al-27 ratio is reached, that a detectable MG-24 excess is very likely to occur, that detectable negative MG-28 anomalies can be generated, and that proton fluxes and irradiation times can be varied simultaneously, and over a wide range of values, without significant changes in the required proton fluence.

Heymann, D.↗
NASA NTRS1978

Electron and proton degradation in /AlGa/As-GaAs solar cells

Results on radiation damage in (AlGa)As-GaAs solar cells by 1 MeV electron fluences up to 10 to the 16th electrons/sq cm and by 15, 20, 30 and 40 MeV proton fluences up to 5 times 10 to the 11th protons/sq cm are presented. The damage is compared with data on state-of-the-art silicon cells which were irradiated along with the gallium arsenide cells. The theoretical expectation that the junction depth has to be kept relatively shallow, to minimize radiation damage has been verified experimentally. The damage to the GaAs cells as a function of irradiation, is correlated with the change in their spectral response and dark I-V characteristics. The effect of thermal annealing on the (AlGa)As-GaAs solar cells was also investigated. This data is used to predict further avenues of optimization of the GaAs cells.

Loo, R.↗
NASA NTRS1980

Periodic annealing of radiation damage in GaAs solar cells

Continuous annealing of GaAs solar cells is compared with periodic annealing to determine their relative effectiveness in minimizing proton radiation damage. It is concluded that continuous annealing of the cells in space at 150 C can effectively reduce the proton radiation damage to the GaAs solar cells. Periodic annealing is most effective if it can be initiated at relatively low fluences (approximating continuous annealing), especially if low temperatures of less than 200 C are to be used. If annealing is started only after the fluence of the damaging protons has accumulated to a high value 10 to the 11th power sq/pcm), effective annealing is still possible at relatively high temperatures. Finally, since electron radiation damage anneals even more easily than proton radiation damage, substantial improvements in GaAs solar cell life can be achieved by incorporating the proper annealing capabilities in solar panels for practical space missions where both electron and proton radiation damage have to be minimized.

Loo, R. Y.↗
NASA NTRS1981

Reduced annealing temperatures in silicon solar cells

Cells irradiated to a fluence of 5x10,000,000,000,000/square cm showed short circuit current on annealing at 200 C, with complete annealing occurring at 275 C. Cells irradiated to 100,000,000,000,000/square cm showed a reduction in annealing temperature from the usual 500 to 300 C. Annealing kinetic studies yield an activation energy of (1.5 + or - 2) eV for the low fluence, low temperature anneal. Comparison with activation energies previously obtained indicate that the presently obtained activation energy is consistent with the presence of either the divacancy or the carbon interstitial carbon substitutional pair, a result which agrees with the conclusion based on defect behavior in boron-doped silicon.

Weinberg, I.↗
NASA NTRS1980

A study of single event upsets in static RAM's

Several types of CMOS static random access memories (RAMs) have been tested in a cyclotron for susceptibility to single event upsets and latchup such as might occur in earth orbit or interplanetary space. No upsets have been observed for neutron fluences of 10 to the 11th n/sq cm and higher or proton fluences of 10 to the 9th protons/sq cm.

Price, W. E.↗
NASA NTRS1980

Deep-level defects and recombination parameters in proton irradiated AlGaAs-GaAs solar cells

The deep-level defects produced in high efficiency AlGaAs-GaAs solar cells by proton energies of 50, 100, 200, and 290 keV are investigated. Proton fluences were from 10 to the 10th to 10 to the 13th p/sq cm. The results show that the diode ideality factor varies between 1.9 and 2.1, indicating that the dominant current component is due to the recombination of electron-hole pairs via deep-level traps in the junction space charge region of these diodes. The recombination current increases with increasing proton fluence and proton energy. The reduction of open circuit voltage, short circuit current, and conversion efficiency in the irradiated cells relates directly to the density of the deep-level defects induced by proton irradiation.

Li, S. S.↗
NASA NTRS1981

The spectra and light curves of two gamma-ray bursts

Observations made by the Hard X-ray and Low Energy Gamma-Ray Experiment on board HEAO-1 of the spectra and light curves of two gamma-ray bursts for which localized arrival directions will become available are presented. The burst of October 20, 1977 is found to exhibit a fluence of 0.000031 + or - 0.000005 erg/sq cm over the energy range 0.135-2.05 MeV and a duration of 38.7 sec, while that of November 10, 1977 is found to have a fluence of 0.000021 + or - 0.000008 erg/sq cm between 0.125 and 3 MeV over 2.8 sec. The light curves of both bursts exhibit time fluctuations down to the limiting time resolution of the detectors. The spectrum of the October burst can be fit by a power law of index -1.93 + or -0.16, which is harder than any other gamma-burst spectrum yet reported. The spectrum of the second burst is softer (index -2.4 + or - 0.7), and is consistent with the upper index in the double power law fit to the burst of April 27, 1972.

Knight, F. K.↗
NASA NTRS1981

Processing of silicon solar cells by ion implantation and laser annealing

Methods to improve the radiation tolerance of silicon cells for spacecraft use are described. The major emphasis of the program was to reduce the process-induced carbon and oxygen impurities in the junction and base regions of the solar cell, and to measure the effect of reduced impurity levels on the radiation tolerance of cells. Substrates of 0.1, 1.0 and 10.0 ohm-cm float-zone material were used as starting material in the process sequence. High-dose, low-energy ion implantation was used to form the junction in n+p structures. Implant annealing was performed by conventional furnace techniques and by pulsed laser and pulsed electron beam annealing. Cells were tested for radiation tolerance at Spire and NASA-LeRC. After irradiation by 1 MeV electrons to a fluence of 10 to the 16th power per sq cm, the cells tested at Spire showed no significant process induced variations in radiation tolerance. However, for cells tested at Lewis to a fluence of 10 to the 15th power per sq cm, ion-implanted cells annealed in vacuum by pulsed electron beam consistently showed the best radiation tolerance for all cell resistivities.

Minnucci, J. A.↗
NASA NTRS1982

The galaxy as the origin of gamma-ray bursts. II - The effect of an intrinsic burst luminosity distribution on log N/greater than S/ versus log S

The effect of intrinsic burst luminosity distributions on log N-log S has been investigated for halo and disk galactic sources, using a power-law burst luminosity distribution characterized by a shape exponent and a luminosity range. Properly chosen burst luminosity distributions are shown to produce the log N-log S relations sufficiently different from those obtained with monoluminosity bursts to yield halo and thick disk geometries which are compatible with the observations. The soft shape of luminosity distributions capable of altering log N-log S has such observable consequences as (1) gamma-ray burst expected repetitions which first become apparent at lower fluences, and (2) the occurrence of most phenomena at luminosities on the order of about 10 to the 39th ergs, and correspondingly lower fluences.

Jennings, M. C.↗
NASA NTRS1982

Radiation damage and annealing in large area n+/p/p+ GaAs shallow homojunction solar cells

Annealing of radiation damage was observed for the first time in VPE-grown, 2- by 2-cm, n+/p/p+ GaAs shallow homojunction solar cells. Electrical performance of several cells was determined as a function of 1-MeV electron fluence in the range of 10 to the 13th power to 10 to the 15th power e-/sq cm and as a function of thermal annealing time at various temperatures. Degradation of normalized power output after a fluence of 10 to the 15th power 1-MeV electrons/sq cm ranged from a low of 24 to 31 percent of initial maximum power. Normalized short circuit current degradation was limited to the range from 10 to 19 percent of preirradiated values. Thermal annealing was carried out in a flowing nitrogen gas ambient, with annealing temperatures spanning the range from 125 to 200 C. Substantial recovery of short circuit current was observed at temperatures as low as 175 C. In one case improvement by as much as 10 percent of the postirradiated value was observed. The key features of these cells are their extremely thin emitter layers (approxmately 0.05 micrometers), the absence of any Al sub xGd sub 1-x As passivating window layer, and their fabrication by vapor phase epitaxy.

Flood, D. J.↗
NASA NTRS1982

Comments on the gamma-ray burst log N /greater than S/ log S point of Beurle et al

Statistical improbability is demonstrated for the Beurle et al (1981) determination of an isotropic cumulative burst rate of 7030 + 10,000 or - 6000/year, at a fluence of 8.47 x to the -9th/erg per sq cm, from their observation of two gamma-ray bursts. The difficulty identified is Beurle's assumption that the power law cumulative distribution function index equals one. Reconsideration of the Beurle observations is undertaken, and an alternative upper limit of the annual number of bursts at the fluence cited of less than 5400/year is proposed.

Jennings, M. C.↗
NASA NTRS1984

Defect studies in one MeV electron irradiated GaAs and in Al/sub x Ga/sub l-x As P-N junction solar cells

Deep level transient spectroscopy reveals that the main electron traps for one-MeV electron irradiated GaAs cells are E9c)-0.31, E(c)-0.90 eV, and the main hole trap is due to the level. Electron trap density was found to vary from 3/tens-trillion ccm for 2/one quadrillion cm 3/3.7 quadrillion cm for 21 sextillion cm electron fluence for electron fluence; a similar result was also obtained for the hole trap density. As for the grown-in defects in the Al(x)Ga(1-x)As p-n junciton cells, only two electron traps with energies of E(c)-0.20 and E(c)-0.34 eV were observed in samples with x = 0.17, and none was found for x 0.05. Auger analysis on the Al(x)Ga(1-x) As window layer of the GaAs solar cell showed a large amount of oxygen and carbon contaminants near the surface of the AlGaAs epilayer. Thermal annealing experiment performed at 250 C for up to 100 min. showed a reduction in the density of both electron traps.

Li, S. S.↗
NASA NTRS1985

Radiation effects induced in pin photodiodes by 40- and 85-MeV protons

PIN photodiodes were bombarded with 40- and 85-MeV protons to a fluence of 1.5 x 10 to the 11th power p/sq cm, and the resulting change in spectral response in the near infrared was determined. The photocurrent, dark current and pulse amplitude were measured as a function of proton fluence. Changes in these three measured properties are discussed in terms of changes in the diode's spectral response, minority carrier diffusion length and depletion width. A simple model of induced radiation effects is presented which is in good agreement with the experimental results. The model assumes that incident protons produce charged defects within the depletion region simulating donor type impurities.

Becher, J.↗
NASA NTRS1985

Further observations of protons resulting from the decay of neutrons ejected by solar flares

The solar flare of 1984 April 24 produced a large gamma ray fluence with energy 2MeV. The time profile of the interplanetary flux from this flare indicates the presence of decaying solar neutrons. This makes a total of three neutron flares so far observed by this method. The three flares are used to place constraints on the fluence and spectra of neutrons emitted by the Sun.

Evenson, P. A.↗
NASA NTRS1985

A consideration of atomic oxygen interactions with space station

A computer model is developed in order to calculate fluence for a generalized spacecraft in orbital flight based on mass spectrometer and incoherent scatter (MSIS) measurements of ambient density. The calculations are used to identify criteria for the selection of materials for the construction of an LEO Space Station. The model is generalized such that the surfaces for study can be oriented in any direction with respect to: a body coordinate system fixed to the spacecraft (E surfaces); and a solar inertial coordinate system. A parametric study was performed in order to evaluate the effects of altitude, inclination, and solar activity on atomic oxygen fluence. Values are obtained for samples of Mylar, Kevlar, Kapton, Tedlar, Teflon and sulfone, as well as for some ethylene polymers. The range of values for material reactivities is from 360 microns for ram-facing surfaces to 200 microns for solar power surfaces during each cycle of solar activity. The possibility of improving reactivity by employing certain chemical coatings is also discussed.

Leger, L. J.↗