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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 559 records · Page 31
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

Spatiospectral and picosecond spatiotemporal properties of a broad area operating channeled-substrate-planar laser array

Spatiospectral and spatiotemporal properties of an eight-element channeled-substrate-planar laser array are investigated in both CW and pulsed operating conditions. The closely spaced CSP array with strong optical coupling between array elements is characterized by a broad area laserlike operation determined by its spatial mode spectra. The spatiotemporal evolution of the near and far field exhibits complex dynamic behavior in the picosecond to nanosecond domain. Operating parameters for the laser device have been experimentally determined. These results provide important information for the evaluation of the dynamic behavior of coherent semiconductor laser arrays.

Yu, NU↗
NASA NTRS1990

Effects of radiation of InP cells epitaxially grown on Si and GaAs substrates

The properties of heteroepitaxial InP cells were determined both before and after 10-MeV proton irradiations. Numerical values, obtained for the diffusion and recombination components of the reverse saturation currents, were found to be consistent with the distribution of dislocations. The radiation resistance of the heteroepitaxial cells was significantly greater than that observed for n/p homoepitaxial InP cells. The carrier removal rate, obtained by C-V measurements, was 1800/cm for 10-MeV protons compared with 2.2/cm for 1-MeV electrons. The high carrier removal rate was found to have no significant effect on the cell's series resistance. It was concluded that the heteroepitaxial cell performance is dominated by the high dislocation density attributable to lattice constant mismatch. Although the efficiencies of the present cells are low, the recent achievement of 13.7 percent AM0 efficiencies using a GaAs substrate demonstrates the marked improvement that can be attained using more appropriate transition layers.

Weinberg, I.↗
NASA NTRS1992

Superconducting Films On Microwave Dielectric Substrates

Thin films of superconductor YBa(2)Cu(3)O(7-delta), formed on microwave dielectric substrates of SrTiO3, MgO, Al2O3 coated with ZrO2, and LaAlO3. Films formed by repeated sequential desposition of layers of Cu, BaF2, and Y in electro-beam evaporator, followed by annealing in oxygen. Technique employed gives layers uniformity and reproducibility required for fabrication of microwave circuits.

Warner, J. D.↗
NASA NTRS1992

Effects of long term exposure on optical substrates and coatings (SOO50-2)

Kodak included 12 substrate and coating samples on the Long Duration Exposure Facility (LDEF) structure. There were 3 fused silica and 3 ultra low expansion (ULE(tm)) uncoated glass samples, 2 ULE(tm) samples with a high reflectance silver coating, 2 fused silica samples with an antireflectance coating, and 2 fused silica samples with a solar rejection coating. The sample dimensions were 32 mm diameter by 1 mm thick. A set of duplicate control samples was also manufactured and stored in a controlled environment for comparison purposes. A preliminary evaluation of the flight samples for effects from the 5 year mission showed that a contaminant was deposited on the samples, a micrometeroid impact occurred on one of the samples, and the radiation darkening which was expected for the glass did not occur. The results are presented in more detail.

John Vallimont↗
NASA NTRS1992

C-band superconductor/semiconductor hybrid field-effect transistor amplifier on a LaAlO3 substrate

A single-stage C-band superconductor/semiconductor hybrid field-effect transistor amplifier was designed, fabricated, and tested at 77 K. The large area (1 inch x 0.5 inches) high temperature superconducting Tl-Ba-Ca-Cu-O (TBCCO) thin film was rf magnetron sputtered onto a LaAlO3 substrate. The film had a transition temperature of about 92 K after it was patterned and etched. The amplifier showed a gain of 6 dB and a 3 dB bandwidth of 100 MHz centered at 7.9 GHz. An identical gold amplifier circuit was tested at 77 K, and these results are compared with those from the hybrid amplifier.

Nahra, J. J.↗
NASA NTRS1991

The fabrication of toroidal and coma-corrected toroidal diffraction gratings from spherical master gratings using elastically-deformable substrates - A progress report

A technique has been developed which permits toroidal, and coma-corrected toroidal, diffraction gratings to be replicated from spherical master gratings by the use of elastically-deformable substrates. Toroidal gratings correct for astigmatism and, thus, make it possible to construct stigmatic spectrometers that employ a single reflective diffraction grating. These spectrometers are particularly useful for the extreme-ultraviolet (EUV) wavelength range, where reflection coefficients are low, since the single optical surface provides for dispersion, focusing, and astigmatism correction. The fabrication procedures for the pure toroidal, and coma-corrected toroidal, gratings are described, and initial test results are presented. The use of the toroidal gratings in a high-resolution sounding-rocket EUV spectroheliometer, and in both the coronal diagnostics spectrometer and the ultraviolet coronagraph spectrometer on the ESA/NASA solar and heliospheric observatory mission, is described briefly, and the use of this technique for the fabrication of a coma-corrected toroidal grating for the prime Rowland spectrograph of the FUSE/Lyman mission is briefly discussed.

Huber, Martin C. E.↗
NASA NTRS1993

Effects of long term space environment exposure on optical substrates and coatings (S0050-2)

Eastman Kodak Company included twelve substrate and coating samples on the Long Duration Exposure Facility (LDEF) structure. There were three Fused Silica and three Ultra Low Expansion (ULE) uncoated glass samples, two ULE samples with a high reflectance silver coating, two Fused Silica samples with an antireflectance coating, and two Fused silica samples with a solar rejection coating. A set of duplicate control samples was also manufactured and stored in a controlled environment for comparison purposes. Kodak's samples were included as a subset of the Georgia Institute of Technology tray, which was located on row 5-E, tray S0050-2. This placed the samples on the trailing edge of the structure, which protected them from the effects of atomic oxygen bombardment. An evaluation of the flight samples for effects from the 5 year mission showed that a contaminant was deposited on the samples, a micrometeoroid impact occurred on one of the samples, and the radiation darkening which was expected for the glass did not occur. The results are listed in more detail.

Harvey, Keith↗
NASA NTRS1991

Organometallic chemical vapor deposition and characterization of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates

In this paper, we report the epitaxial growth of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates by open tube OMCVD. The chemical composition of the alloys characterized by energy dispersive X-ray spectroscopy shows that alloys with x up to 0.13 can be deposited on (001) GaP. Epitaxial growth with mirror smooth surface morphology has been achieved for x less than or equals to 0.05. Selected area electron diffraction pattern of the alloy shows that the epitaxial layer crystallizes in the chalcopyrite structure with relatively weak superlattice reflections indicating certain degree of randomness in the cation sublattice. Hall measurements show that the alloys are p-type, like the unalloyed films; the carrier concentration, however, dropped about 10 times from 2 x 10 exp 18 to 2 x 10 exp 17/cu cm. Absorption measurements indicate that the band tailing in the absorption spectra of the alloy has been shifted about 0.04 eV towards shorter wavelength as compared to the unalloyed material.

Xing, G. C.↗
NASA NTRS1993

Gas flow-field induced director alignment in polymer dispersed liquid crystal microdroplets deposited on a glass substrate

Polymer dispersed liquid crystal thin films have been deposited on glass substrates by the processes of polymerization and solvent evaporation induced phase separation. The electron and the optical polarization microscopies of the films reveal that PDLC microdroplets formed during the process of phase separation near the top surface of the film remain exposed and respond to shear stress due to air or gas flow on the surface. Optical response of the film to an air flow-induced shear stress input on the free surface has been measured. Director orientation in the droplets changes with the applied shear stress leading to time varying transmitted light intensity. Director dynamics of the droplet for an applied step shear stress has been discussed from free energy considerations. Results on the measurement of light transmission as a function of the gas flow parameter unambiguously demonstrate the potential of these systems for use as boundary layer and gas flow sensors.

Parmar, D. S.↗
NASA NTRS1992

Closed-ampoule diffusion of sulfur into Cd-doped InP substrates - Dependence of S profiles on diffusion temperature and time

In order to optimize the fabrication of n(+)-p InP solar cells made by closed-ampoule diffusion of sulfur into p-InP:Cd substrates, we have investigated the influence of diffusion conditions on sulfur diffusion profiles. We show that S diffusion in InP is dominated by the P vacancy mechanism and is not characterized by a complementary error function as expected for an infinite source diffusion. The S diffusion mechanism in p-InP is qualitatively explained by examining the depth profiles of S, P, and In in the emitter layer and by taking into account the presence and composition of different compounds found to form in the In-P-S-O-Cd system as a result of diffusion.

Faur, Mircea↗
NASA NTRS1993

Organometallic chemical vapor deposition and characterization of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates

The epitaxial growth of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates by open tube organometallic chemical vapor deposition (OMCVD) is reported. The chemical composition of the alloys characterized by energy dispersive X-ray spectroscopy shows that alloys with x up to 0.13 can be deposited on (001) GaP. Epitaxial growth with mirror smooth surface morphology was achieved for x less than or equal to 0.05. Transmission electron microscopy (TEM) micrographs of these alloys show specular epitaxy and the absence of microstructural defects indicating a defect density of less than 10(exp 7) cm(sup -2). Selected area electron diffraction pattern of the alloy shows that the epitaxial layer crystallizes in the chalcopyrite structure with relatively weak superlattice reflections indicating certain degree of randomness in the cation sublattice. Hall measurements show that the alloys are p-type, like the unalloyed films; the carrier concentration, however, dropped about 10 times from 2 x 10(exp 18) to 2 x 10(exp 17) cm(sup -3). Absorption measurements indicate that the band tailing in the absorption spectra of the alloy was shifted about 0.04 eV towards shorter wavelength as compared to the unalloyed material. Diodes fabricated from the n(+)-GaP/p-ZnSiP2-ZnGeP2-Ge heterostructure at x = 0.05 have a reverse break-down voltage of -10.8 V and a reverse saturation current density of approximately 6 x 10(exp -8) A/sq cm.

Xing, G. C.↗
NASA NTRS1993

Attenuation of epsilon(sub eff) of coplanar waveguide transmission lines on silicon substrates

Attenuation and epsilon(sub eff) of Coplanar Waveguide (CPW) transmission lines were measured on Silicon substrates with resistivities ranging from 400 to greater than 30,000 ohm-cm, that have a 1000 angstrom coating of SiO2. Both attenuation and epsilon(sub eff) are given over the frequency range 5 to 40 GHz for various strip and slot widths. These measured values are also compared to the theoretical values.

Taub, Susan R.↗
NASA NTRS1994

Small satellite solar array substrate

The SMall EXplorer (SMEX) Fast Auroral SnapshoT (FAST) spacecraft was developed to investigate plasma physics of auroral phenomena at high orbital altitude. The FAST satellite comprises a variety of deployable booms with sensors on the ends, and instruments that protrude from the main body of the spacecraft to obtain the plasma and electromagnetic fields data. This required the plasma disturbance around the satellite to be kept to a minimum. A non deployable, body mounted solar array was implemented. This led to the design of a light weight solar array substrate with a high degree of structural integrity.

Fiore, John N.↗
NASA NTRS1995

Photoluminescence spectroscopy and the effective mass theory of strained (In,Ga)As/GaAs heterostructures grown on (112)B GaAs substrates

The photoluminescence characteristics of pseudomorphic In(0.19)Ga(0.81)As/GaAs quantum well structures grown on both the conventional (001) and the unconventional (112)B GaAs substrate are investigated. It is found that the emission spectra of the structures grown on the (112)B surface exhibit some spectral characteristics not observed on similar structures grown on the (001) surface. A spectral blue shift of the e yields hh1 transition with increasing optical pump intensity is observed for the quantum wells on the (112) surface. This shift is interpreted to be evidence of a strain-induced piezoelectric field. A second spectral feature located within the band gap of the In(0.19)Ga(0.81)As layer is also observed for the (112) structure; this feature is thought to be an impurity-related emission. The expected transition energies of the quantum well structures are calculated using the effective mass theory based on the 4 x 4 Luttinger valence band Hamiltonian, and related strain Hamiltonian.

Henderson, R. H.↗
NASA NTRS1995

Fabrication Of SNS Weak Links On SOS Substrates

High-quality superconductor/normal-conductor/superconductor (SNS) devices ("weak links") containing epitaxial films of YBa(2)Cu(3)O(7-x) and SrTiO(3) fabricated on silicon-on-sapphire (SOS) substrates with help of improved multilayer buffer system. Process for fabrication of edge-defined SNS weak links described in "Edge-Geometry SNS Devices Made of Y/Ba/Cu" (NPO-18552).

Hunt, Brian D.↗
NASA NTRS1996

AIN-Coated Al(2)O(3) Substrates For Electronic Circuits

Type of improved ceramic substrate for high-frequency, high-power electronic circuits combines relatively high thermal conductivity of aluminum nitride with surface smoothness of alumina. Consists of 15-micrometer layer of AIN deposited on highly polished alumina. Used for packaging millimeter-wave gallium arsenide transmitter chips, power silicon chips, and like.

Kolawa, Elzbieta↗
NASA NTRS1996

Epitaxial Growth of beta-Silicon Carbide (SiC) on a Compliant Substrate via Chemical Vapor Deposition (CVD)

Many lattice defects have been attributed to the lattice mismatch and the difference in the thermal coefficient of expansion between SiC and silicon (Si). Stacking faults, twins and antiphase boundaries are some of the lattice defects found in these SiC films. These defects may be a partial cause of the disappointing performance reported for the prototype devices fabricated from beta-SiC films. The objective of this research is to relieve some of the thermal stress due to lattice mismatch when SiC is epitaxially grown on Si. The compliant substrate is a silicon membrane 2-4 microns thick. The CVD process includes the buffer layer which is grown at 1360 C followed by a very thin epitaxial growth of SiC. Then the temperature is raised to 1500 C for the subsequent growth of SiC. Since silicon melts at 1415 C, the SiC will be grown on molten Silicon which is absorbed by a porous graphite susceptor eliminating the SiC/Si interface. We suspect that this buffer layer will yield less stressed material to help in the epitaxial growth of SiC.

Mitchell, Sharanda L.↗
NASA NTRS1996

Fluid Dynamics and Solidification of Molten Solder Droplets Impacting on a Substrate in Microgravity

This program investigates the fluid dynamics and simultaneous solidification of molten solder droplets impacting on a flat substrate. The problem of interest is directly relevant to the printing of microscopic solder droplets in surface mounting of microelectronic devices. The study consists of a theoretical and an experimental component. The theoretical work uses axisymmetric Navier-Stokes models based on finite element techniques. The experimental work is performed in microgravity to allow for the use of larger solder droplets that make feasible the performance of accurate measurements while maintaining similitude of the relevant fluid dynamics groups (Re, We) and keeping the effect of gravity negligible.

Poulikakos, Dimos↗