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DOE OSTI2022

Rashba effects in lead-free ferroelectric semiconductor [CH 3 PH 3 ]SnBr 3

Here, first-principles density functional theory computations are used to predict Rashba effects cofunctional with ferroelectricity in a recently synthesized lead-free hybrid organic-inorganic perovskite MPSnBr 3 (MP=methylphosphonium, [CH 3 PH 3 ] + ). The ground state of the material is polar monoclinic with calculated spontaneous polarization of 3.01 µC/cm 2 . It exhibits near band edges spin-splitting of up to 3.3 meV and Rashba coefficient up to 0.62 eV Å. The spin textures have different topology in the conduction and valence band, which originates from the difference in the spin-momentum coupling strengths. They occur in two orthogonal planes of the Brillouin zone and are coupled to the direction of spontaneous polarization. These features persist at a finite temperature of 293 K. At 333 K, that is above monoclinic to orthorhombic phase transition, spontaneous polarization is reduced to 0.15 µC/cm 2 , while the maximum spin splitting and Rashba coefficient reduce slightly to the value of 2.9 meV and 0.41 eV Å, respectively. The spin textures remain coupled with the polarization direction. We investigate the dependence of the aforementioned properties on the choice of computational methodology to extend the first-principles predictions to include finite temperature effects. We find that the predictions are sensitive to the methodology. Our study reveals the potential of MPSnBr 3 for low-temperature applications in spintronics and quantum computing.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2025

Modeling kinetic effects of charged vacancies on electromechanical responses of ferroelectrics: Rayleighian approach

Understanding the time-dependent effects of charged vacancies on the electromechanical responses of materials is at the forefront of research for designing materials exhibiting metal-insulator transitions and memristive behavior. A Rayleighian approach is used to develop a model for studying the nonlinear kinetics of the reaction leading to generation of vacancies and electrons via the dissociation of vacancy-electron pairs. Also, diffusion and elastic effects of charged vacancies are considered to model polarization-electric potential and strain-electric potential hysteresis loops. The model captures multiphysics phenomena by introducing couplings among polarization, the electric potential, stress, strain, and concentrations of charged (multivalent) vacancies and electrons (treated as classical negatively charged particles), where the concentrations can vary due to association-dissociation reactions. A derivation of coupled time-dependent equations based on the Rayleighian approach is presented. Three limiting cases of the governing equations are considered, highlighting the effects of (1) nonlinear reaction kinetics on the generation of charged vacancies and electrons, (2) Vegard's law (i.e., the concentration-dependent local strain) on asymmetric strain-electric potential relations, and (3) coupling between a fast component and the slow component of the net polarization on the polarization-electric-field relations. The Rayleighian approach discussed in this work should pave the way for developing a multiscale modeling framework in a thermodynamically consistent manner while capturing multiphysics phenomena in ferroelectric materials. Published by the American Physical Society 2025

Kumar, Rajeev (ORCID:0000000194943488)↗

DOE OSTI2024

Variation Tolerant and Energy-Efficient Charge Domain Compute-in-Memory Array with Binary and Multi-Level Cell Ferroelectric FET

Here, in this work, we present a variation-tolerant and energy-efficient charge-domain Ferroelectric FET (FeFET) based Compute-in-Memory (CiM) array design that is compatible with both binary and multi-level cell memory sensing. We demonstrate that: 1) by exploiting FeFET as a nonvolatile switch, its high ON/OFF ratio in the subthreshold region can suppress the error introduced by the inaccurate ON state conductance, thus realizing robust CiM operations, unlike the current-domain CiM design where the computation results is highly sensitive to the device conductance variation; 2) by leveraging a dense dynamic random access memory (DRAM)-like 1FeFET1C cell structure, the proposed design benefits from the existing high density DRAM establishment while also significantly relaxing the capacitor retention and transistor leakage requirement; 3) the charge-domain CiM supports both binary FeFET with minimum overhead and MLC FeFET with tolerable latency for MLC state sensing, whose efficacy is validated experimentally on both cell-level and array-level; 4) the proposed CiM shows much better device variation resilience than conventional current-domain CiM, and also improves inference accuracy. Macro-level evaluation results demonstrate significantly higher energy efficiency and area efficiency compared to prior CiM works.

Duan, Jiahui [University of Notre Dame, IN (United↗

DOE OSTI2021

Impact of Random Spatial Fluctuation in Non-Uniform Crystalline Phases on the Device Variation of Ferroelectric FET

In this work, a comprehensive study of random spatial fluctuation of the ferroelectric (FE) phase and dielectric (DE) phase in FeFETs is conducted to understand its impact on device variation. It is found that: i) there exists a certain DE percentage threshold that below which the increase of the DE phase does not significantly impact the device memory window and variation and only above which evident device degradation can be observed; ii) increasing the DE phase increases the variation in the memory window and the coercive field distribution further exacerbates the variation, hence degrading the sensing margin; iii) decreasing the number of grains degrades the device variation, which calls for further grain size engineering for variation suppression.

42 ENGINEERING↗

DOE OSTI2020

Atomic-Scale Imaging of Polarization Switching in an (Anti-)Ferroelectric Memory Material: Zirconia (ZrO2)

Direct, atomic-scale visualization of polarization switching in a functional, polycrystalline, binary oxide via in-situ high-resolution transmission electron microscopy (HRTEM) biasing is reported for the first time. Antiferroelectric (AFE) ZrO2 was used as the model system, which is important for commercial DRAMs and as emerging NVMs (through work-function engineering). We observed (1) clear shifting and coalescing of domains within a single grain, and (2) dramatic changes of the atomic arrangements and crystalline phases—both at voltages above the critical voltage measured for AFE switching. Similar synergistic in-situ structural-electrical characterization can pave the way to understand and engineer microscopic mechanisms for retention, fatigue, variability, sub-coercive switching and analog states in ferroelectric and AFE-based memory devices.

Lombardo, Sarah↗

DOE OSTI2024

Ferroelectric FET-based context-switching FPGA enabling dynamic reconfiguration for adaptive deep learning machines

Field programmable gate array (FPGA) is widely used in the acceleration of deep learning applications because of its reconfigurability, flexibility, and fast time-to-market. However, conventional FPGA suffers from the trade-off between chip area and reconfiguration latency, making efficient FPGA accelerations that require switching between multiple configurations still elusive. Here, we propose a ferroelectric field-effect transistor (FeFET)–based context-switching FPGA supporting dynamic reconfiguration to break this trade-off, enabling loading of arbitrary configuration without interrupting the active configuration execution. Leveraging the intrinsic structure and nonvolatility of FeFETs, compact FPGA primitives are proposed and experimentally verified. The evaluation results show our design shows a 63.0%/74.7% reduction in a look-up table (LUT)/connection block (CB) area and 82.7%/53.6% reduction in CB/switch box power consumption with a minimal penalty in the critical path delay (9.6%). Besides, our design yields significant time savings by 78.7 and 20.3% on average for context-switching and dynamic reconfiguration applications, respectively.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2025

Large enhancement of ferroelectric properties of perovskite oxides via nitrogen incorporation

Perovskite oxides have a wide variety of physical properties that make them promising candidates for versatile technological applications including nonvolatile memory and logic devices. Chemical tuning of those properties has been achieved, to the greatest extent, by cation-site substitution, while anion substitution is much less explored due to the difficulty in synthesizing high-quality, mixed-anion compounds. Here, nitrogen-incorporated BaTiO3 thin films have been synthesized by reactive pulsed-laser deposition in a nitrogen growth atmosphere. The enhanced hybridization between titanium and nitrogen induces a large ferroelectric polarization of 70 μC/cm2 and high Curie temperature of ~1213 K, which are ~2.8 times larger and ~810 K higher than in bulk BaTiO3, respectively. These results suggest great potential for anion-substituted perovskite oxides in producing emergent functionalities and device applications.

Wang, Tao↗

DOE OSTI2021

Toroidal polar topology in strained ferroelectric polymer

Polar topological texture has become an emerging research field for exotic phenomena and potential applications in reconfigurable electronic devices. Here, we report toroidal topological texture self-organized in a ferroelectric polymer, poly(vinylidene fluoride-ran-trifluoroethylene) [P(VDF-TrFE)], that exhibits concentric topology with anticoupled chiral domains. The interplay among the elastic, electric, and gradient energies results in continuous rotation and toroidal assembly of the polarization perpendicular to polymer chains, whereas relaxor behavior is induced along polymer chains. Such toroidal polar topology gives rise to periodic absorption of polarized far-infrared (FIR) waves, enabling the manipulation of the terahertz wave on a mesoscopic scale. Our observations should inform design principles for flexible ferroic materials toward complex topologies and provide opportunities for multistimuli conversions in flexible electronics.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Control of polarization in bulk ferroelectrics by mechanical dislocation imprint

Defects are essential to engineering the properties of functional materials ranging from semiconductors and superconductors to ferroics. Whereas point defects have been widely exploited, dislocations are commonly viewed as problematic for functional materials and not as a microstructural tool. In this work, we developed a method for mechanically imprinting dislocation networks that favorably skew the domain structure in bulk ferroelectrics and thereby tame the large switching polarization and make it available for functional harvesting. The resulting microstructure yields a strong mechanical restoring force to revert electric field–induced domain wall displacement on the macroscopic level and high pinning force on the local level. This induces a giant increase of the dielectric and electromechanical response at intermediate electric fields in barium titanate [electric field–dependent permittivity (ε 33 ) ≈ 5800 and large-signal piezoelectric coefficient ( d 33 *) ≈ 1890 picometers/volt]. Dislocation-based anisotropy delivers a different suite of tools with which to tailor functional materials.

36 MATERIALS SCIENCE↗

DOE OSTI2026

Unexpected symmetry breaking in ferroelectric wurtzite thin films on silicon observed by optical second harmonic generation

Optical second harmonic generation (SHG) exists as a popular tool for probing materials with broken inversion symmetry in the physical and biological sciences. SHG polarimetry can reveal material anisotropy with high sensitivity, including point group and phase transitions. Here, we probe ferroelectric wurtzite films with a nominal 6 mm symmetry under a normal reflection geometry using SHG microscopy and discover an unexpected symmetry breaking. Symmetry considerations would normally forbid the detection of the SHG signal when light propagates along the polar 6-fold rotation axis. Yet a uniquely anisotropic SHG response is observed in this geometry in Al 1-x B x N, Al 1-x Sc x N, Zn 1-x Mg x O, and AlN/Al 1-x Sc x N heterostructures grown on silicon that can be modeled by an average monoclinic symmetry of point group m. A significant enhancement of the SHG signal corresponding to up to a 5.3× increase in the SHG intensity (hence ∼2.3 × in effective SHG tensor coefficient) is observed at antiparallel polar domain walls, suggesting local cooperative alignment of symmetry-breaking structural distortions. Namely, it is found that the monoclinic mirror plane is oriented predominantly perpendicular to the walls. Such increases in domain wall SHG thus reveal that subtle symmetry breaking can be a pathway to large property enhancements.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Symmetry relation database and its application to ferroelectric materials discovery

To investigate the displacive phase transition at the atomic scale, we have implemented a numerical algorithm to automate the detection of the symmetry relations between any two candidate crystal structures. Using this algorithm, here we systematically screen all possible polar–nonpolar structure pairs from the Materials Project database and establish a library of ~4500 pairs that can be connected through a continuous phase transition with small atomic displacements. From this database, we identify several new ferroelectric materials. In addition, the database may also be used in other areas, such as material structure prediction and new materials discovery.

36 MATERIALS SCIENCE↗

DOE OSTI2026

A reactive ferroelectric tuner for microphonics compensation

Jefferson Lab (JLab) is actively pursuing an extensive research program focused on developing advanced Nb₃Sn superconducting technology for particle accel-eration. Due to the brittle nature of Nb₃Sn coatings, a Ferroelectric Tuner (FRT) currently represents the most viable approach for microphonics compensation in these next-generation cavities. We suggest a novel, fast-responding FRT integrated directly into the main coupler, eliminating the need for an additional RF port. Leveraging a unique RF design based on a magic-T configuration, this advanced FRT will enable micro-phonics compensation in the ±30 Hz range without undesirable changes to the external quality factor.

Accelerator Physics↗

DOE OSTI2021

Stabilization of ferroelectric phase of Hf 0.6 Zr 0.4 O 2 on NbN and Nb [slides]

This work demonstrated both NbN and Nb make good electrodes for stabilizing orthorhombic phase of Hf 0.6 Zr 0.4 O 2 ferroelectric films. Wake up are < 100 cycles. P r can be as high as 30 µC/cm 2 - respectively 14 and 18 µC/cm 2 here. Further, capacitance suggests an orthorhombic phase can be stabilized. Addition of a linear dielectric under modest thickness can tune the P r and reduce leakage.

36 MATERIALS SCIENCE↗

DOE OSTI2024

External Fast Electrically-Controlled Ferroelectric Tuners for SRF Cavities

Euclid Techlabs LLC, in collaboration with JLAB (R. Rimmer, C. Hovater) has been awarded the Phase I 2021 DOE SBIR DE-SC0021510 project to develop the first Fast Ferroelectric reactive tuner (FRT) for a SRF accelerator that is currently in operation – CEBAF at JLAB, and is studying the possibility of developing a tuner designs for various new applications: fast frequency switching, transient detuning, and microphonics compensation for the SRF accelerators.

43 PARTICLE ACCELERATORS↗

DOE OSTI2024