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DOE OSTI2022

Weak Electron–Phonon Coupling and Enhanced Thermoelectric Performance in n-type PbTe–Cu 2 Se via Dynamic Phase Conversion

This study investigates Ga-doped n-type PbTe thermoelectric materials and the dynamic phase conversion process of the second phases via Cu 2 Se alloying. Introducing Cu 2 Se enhances its electrical transport properties while reducing its lattice thermal conductivity (κlat) via weak electron–phonon coupling. Additionally, Cu 2 Te and CuGa(Te/Se) 2 (tetragonal phase) nanocrystals precipitate during the alloying process, resulting in Te vacancies and interstitial Cu in the PbTe matrix. At room temperature, Te vacancies and interstitial Cu atoms serve as n-type dopants, increasing the carrier concentration and electrical conductivity from ≈1.18 × 10 19 cm –3 and ≈1870 S cm –1 to ≈2.26 × 10 19 cm –3 and ≈3029 S cm –1 , respectively. With increasing temperature, the sample exhibits a dynamic change in Cu 2 Te content and the generation of a new phase of CuGa(Te/Se) 2 (cubic phase), strengthening the phonon scattering and obtaining an ultralow k lat . Pb 0.975 Ga 0.025 Te-3%CuSe exhibits a maximum figure of merit of ≈1.63 at 823 K, making it promising for intermediate-temperature device applications.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Conductive spinels derived from Co–Mn based alloy precursor for SOFC cathode-side contact application

The utilization of gas-atomized Co–Mn based alloy precursor is a promising approach to lowering the sintering temperature of the spinel contact layer and enhancing its performance. In this work, simulated interconnect/contact/cathode cells are employed to investigate the effects of different metallic precursors (i.e., three Co–Mn based alloy powders and a mixture of Co + MnO 2 powders) on the microstructure and performance of the reactively-sintered MnCo 2 O 4 -based contact layer. While excellent overall electrical performance is observed for all the cells with the four contact precursors during 1000-h testing at 800 °C in air, the cell with the Ce-doped alloy contact precursor shows the lowest cell area specific resistance (ASR) and ASR degradation rate. Cross-sectional observation of the tested cells is conducted to assess the compatibility of the contact layer with adjacent components as well as its effectiveness in reducing the Cr 2 O 3 scale growth and blocking Cr migration from the interconnect to the cathode.

08 HYDROGEN↗

DOE OSTI2021

Oxygen Electrocatalysis on Mixed-Metal Oxides/Oxyhydroxides: From Fundamentals to Membrane Electrolyzer Technology

Catalyzing the oxygen evolution reaction (OER) is important for key energy-storage technologies, particularly water electrolysis and photoelectrolysis for hydrogen fuel production. Under neutral-to-alkaline conditions, first-row transition-metal oxides/(oxy)hydroxides are the fastest-known OER catalysts and have been the subject of intense study for the past decade. Critical to their high performance is the intentional or accidental addition of Fe to Ni/Co oxides that convert to layered (oxy)hydroxide structures during the OER. Unraveling the role that Fe plays in the catalysis and the molecular identity of the true “active site” has proved challenging, however, due to the dynamics of the host structure and absorbed Fe sites as well as the diversity of local structures in these disordered active phases. In this Account, we highlight our work to understand the role of Fe in Ni/Co (oxy)hydroxide OER catalysts. We first discuss how we characterize the intrinsic activity of the first-row transition-metal (oxy)hydroxide catalysts as thin films by accounting for the contributions of the catalyst-layer thickness (mass loading) and electrical conductivity as well as the underlying substrate’s chemical interactions with the catalyst and the presence of Fe species in the electrolyte. We show how Fe-doped Ni/Co (oxy)hydroxides restructure during catalysis, absorb/desorb Fe, and in some cases degrade or regenerate their activity during electrochemical testing. We highlight the relevant techniques and procedures that allowed us to better understand the role of Fe in activating other first-row transition metals for OER. We find several modes of Fe incorporation in Ni/Co (oxy)hydroxides and show how those modes correlate with activity and durability. We also discuss how this understanding informs the incorporation of earth-abundant transition-metal OER catalysts in anion-exchange-membrane water electrolyzers (AEMWE) that provide a locally basic anode environment but run on pure water and have advantages over the more-developed proton-exchange-membrane water electrolyzers (PEMWE) that use platinum-group-metal (PGM) catalysts. We outline the key issues of introducing Fe-doped Ni/Co (oxy)hydroxide catalysts at the anode of the AEMWE, such as the oxidative processes triggered by Fe species traveling through the polymer membrane, pH-gradient effects on the catalyst stability, and possibly limited catalyst utilization in the compressed stack configuration. We also suggest possible mitigation strategies for these issues. Lastly, we summarize remaining challenges including the long-term stability of Fe-doped Ni/Co (oxy)hydroxides under OER conditions and the lack of accurate models of the dynamic active surface that hinder our understanding of, and thus ability to design, these catalysts.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2024

Superconducting phase diagram in Bi x Ni 1 – x thin films: The effects of Bi stoichiometry on superconductivity

The Bi-Ni binary system has been of interest due to possible unconventional superconductivity aroused therein, such as time-reversal symmetry breaking in Bi/Ni bilayers or the coexistence of superconductivity and ferromagnetism in Bi 3 ⁢Ni crystals. While Ni acts as a ferromagnetic element in such systems, the role of the strong spin-orbit coupling element Bi in superconductivity has remained unexplored. In this work, we systematically studied the effects of Bi stoichiometry on the superconductivity of Bi x ⁢Ni 1–x thin films (x ≈ 0.5–0.9) fabricated via a composition-spread approach. Here, the superconducting phase map of Bi x ⁢Ni 1–x thin films exhibited a superconducting composition region attributable to the intermetallic Bi 3 ⁢Ni phase with different amounts of excess Bi, revealed by synchrotron x-ray diffraction analysis. Interestingly, the mixed-phase region with Bi 3 ⁢Ni and Bi showed unusual increases in the superconducting transition temperature and residual resistance ratio as more Bi impurities were included, with the maximum T c (=4.2K) observed at x ≈ 0.79. A correlation analysis of structural, electrical, and magneto-transport characteristics across the composition variation revealed that the unusual superconducting “dome” is due to two competing roles of Bi: impurity scattering and carrier doping. We found that the carrier doping effect is dominant in the mild doping regime (0.74 ≤ x ≤ 0.79), while impurity scattering becomes more pronounced at larger Bi stoichiometry.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2024

Machine learning-accelerated discovery of iron cobalt phosphides as rare-earth-free magnets

Here, the discovery of rare-earth-free permanent magnets has been a goal of scientists for decades. The absence of rare-earth elements will alleviate a pressing concern about the availability of rare-earth elements used in permanent magnets. These magnets are crucial for applications such as wind turbines, electric cars, and memory devices. Rare-earth magnets are special owing to a large magnetic anisotropy energy (K 1 ). In contrast, iron cobalt phosphides hold promise since doping P into cubic FeCo can induce anisotropy, leading to a large coercivity, without introducing rare-earth elements. We present a comprehensive search over the Fe-Co-P ternary space for magnets, utilizing recently developed adaptive machine learning feedback to efficiently screen over 850 000 structures. We focus on machine learning acceleration as a paradigm for materials design. Further adaptive genetic algorithm searches and first-principles calculations aid in the identification of 16 new structures below the known convex hull. Five of them possess high magnetic polarization (J s > 1 T). The structures with desirable magnetic properties center on (Fe,Co) 2⁢ P. This supports conventional wisdom, which focuses on the mixture of the two known end compounds: Fe 2 ⁢P and Co 2 ⁢P. Our work provides guidance for synthesis. We find Fe 7 ⁢CoP 4 shows the most promise (J s = 1.03T and K 1 = 0.83MJ/m 3 ).

36 MATERIALS SCIENCE↗

NASA NTRS1982

Long-Life/Low-Power Ion-Gun Cathode

New cathode has form of hollow tube through which gas enters region of high electron density, produced by electric discharge with auxiliary electrode referred to as "keeper." Ion-gun cathode emits electrons that bombard gas in chamber. Ions accelerated out of source are used to dope semiconductor material.

Fitzgerald, D. J.↗

NASA NTRS2017

Polymer Nanofiber Based Reversible Nano-Switch/Sensor Diode (Nanosssd) Device

A nanostructure device is provided and performs dual functions as a nano-switching/sensing device. The nanostructure device includes a doped semiconducting substrate, an insulating layer disposed on the doped semiconducting substrate, an electrode formed on the insulating layer, and at least one polymer nanofiber deposited on the electrode. The at least one polymer nanofiber provides an electrical connection between the electrode and the substrate and is the electroactive element in the device.

Miranda, Felix A.↗

NASA NTRS2018

Polymer Nanofiber Based Reversible Nano-Switch/Sensor Schottky Diode (Nanosssd) Device

Miranda, Felix A.↗

DOE OSTI2023

Polymer Architecture-Induced Trade-off between Conductivities and Transference Numbers in Salt-Doped Polymeric Ionic Liquids

Recent experiments have demonstrated that polymeric ionic liquids that share the same cation and anion but possess different architectures can exhibit markedly different conductivity and transference number characteristics when doped with lithium salt. In this study, we used atomistic molecular simulations on polymer chemistries inspired by the experiments to probe the mechanistic origins underlying the competition between conductivity and transference numbers. Our results indicate that the architecture of the polycationic ionic liquid plays a subtle but crucial role in modulating the anion–cation interactions, especially their dynamical coordination characteristics. Chemistries leading to longer-lived anion–cation coordinations relative to lithium–anion coordinations lead to lower conductivities and higher transference numbers. Furthermore, our results suggest that higher conductivities are accompanied by lower transference numbers and vice versa, revealing that alternative approaches may need to be considered to break this trade-off in salt-doped polyILs.

33 ADVANCED PROPULSION SYSTEMS↗

DOE OSTI2023

Coupling of magnetism, crystal lattice, and transport in EuCuP and EuCuAs

EuCuP and EuCuAs are members of a family of materials with candidates for realizing magnetically tuned electronic topology. Here, in this work, the magnetic phase transitions and magnetoelastic coupling of EuCuP and EuCuAs have been investigated. Around the Curie temperature, the thermal expansion coefficient and specific-heat capacity of EuCuP are found to have two closely spaced features, at approximately 30 and 31.3 K, which may indicate a cascading magnetic transition or perhaps an electronic transition closely coupled to the magnetic ordering. The zero-field magnetoelastic coupling appears to be stronger in EuCuP than in EuCuAs, and field-dependent measurements suggest this is due to the dominant ferromagnetic interaction in EuCuP as opposed to antiferromagnetic order in EuCuAs below T N =13.5 K. Thermal expansion is anisotropic around T N in EuCuAs, with a maximum expansion along [001] occurring above T N prior to a stiffening of this c -axis component on cooling through T N ; the expansion of the basal plane has a lambda-like peak centered slightly above T N . Matching these behaviors, the ac susceptibility data for EuCuAs suggest the presence of strong ferromagnetic correlations above T N in the vicinity where the c-axis expansion peaks. Both compounds possess similar electrical and thermoelectric transport behaviors, with short-range magnetic order likely playing an important role above T C or T N . Transport properties suggest these are predominantly hole doped due to intrinsic defects, and narrow-gap semiconducting or semimetallic behavior may be achievable if the underlying defects can be tuned.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Ultrafast creation of a light-induced semimetallic state in strongly excited 1T-TiSe 2

Screening, a ubiquitous phenomenon associated with the shielding of electric fields by surrounding charges, has been widely adopted as a means to modify a material’s properties. While most studies have relied on static changes of screening through doping or gating thus far, here we demonstrate that screening can also drive the onset of distinct quantum states on the ultrafast timescale. By using time- and angle-resolved photoemission spectroscopy, we show that intense optical excitation can drive 1T-TiSe 2 , a prototypical charge density wave material, almost instantly from a gapped into a semimetallic state. By systematically comparing changes in band structure over time and excitation strength with theoretical calculations, we find that the appearance of this state is likely caused by a dramatic reduction of the screening length. In summary, this work showcases how optical excitation enables the screening-driven design of a nonequilibrium semimetallic phase in TiSe 2 , possibly providing a general pathway into highly screened phases in other strongly correlated materials.

36 MATERIALS SCIENCE↗

NASA NTRS1990

MBE HgCdTe heterostructure detectors

HgCdTe has been the mainstay for medium (3 to 5 micron) and long (10 to 14 micron) wavelength infrared detectors in recent years. Conventional growth and processing techniques are continuing to improve the material. However, the additional ability to tailor composition and placement of doped layers on the tens of angstroms scale using molecular beam epitaxy (MBE) provides the opportunity for new device physics and concepts to be utilized. MBE-based device structures to be discussed here can be grouped into two categories: tailored conventional structures and quantum structures. The tailored conventional structures are improvements on familiar devices, but make use of the ability to create layers of varying composition, and thus band gap, at will. The heterostructure junction can be positioned independently of doping p-n junctions. This allows the small band gap region in which the absorption occurs to be separated from a larger band gap region in which the electric field is large and where unwanted tunneling can occur. Data from hybrid MBE/liquid phase epitaxy (LPE)/bulk structures are given. Quantum structures include the HgTe-CdTe superlattice, in which the band gap and transport can be controlled by alternating thin layers (tens of angstroms thick) of HgTe and CdTe. The superlattice has been shown to exhibit behavior which is non-alloy like, including very high hole mobilities, two-dimensional structure in the absorption coefficient, resonant tunneling, and anisotropic transport.

Schulman, Joel N.↗

NASA NTRS2019

GaN/AlGaN Avalanche Photodiode Detectors for High Performance Ultraviolet Sensing Applications

The shorter wavelengths of the ultraviolet (UV) band enable detectors to operate with increased spatial resolution, variable pixel sizes, and large format arrays, benefitting a variety of NASA, defense, and commercial applications. AlxGa1-xN semiconductor alloys, which have attracted much interest for detection in the UV spectral region, have been shown to enable high optical gains, high sensitivities with the potential for single photon detection, and low dark current performance in ultraviolet avalanche photodiodes (UV-APDs). We are developing GaN/AlGaN UV-APDs with large pixel sizes that demonstrate consistent and uniform device performance and operation. These UV-APDs are fabricated through high quality metal organic chemical vapor deposition (MOCVD) growth on lattice-matched, low dislocation density GaN substrates with optimized material growth and doping parameters. The use of these low defect density substrates is a critical element to realizing highly sensitive UV-APDs and arrays with suppressed dark current under high electric fields.Optical gains greater than 5X10 (exp 6) with enhanced quantum efficiencies over the 350-400 nm spectral range have been demonstrated, enabled by a strong avalanche multiplication process. Furthermore, we are developing 6X6 arrays of devices to test high gain UV-APD array performance at ~355 nm. These variable-area GaN/AlGaN UV-APD detectors and arrays enable advanced sensing performance over UV bands of interest with high resolution detection for NASA Earth Science applications.

Sood, Ashok K.↗

NASA NTRS2016

Computational and Experimental Study of Li-doped Ionic Liquids at Electrified Interfaces

We evaluate the influence of Li-salt doping on the dynamics, capacitance, and structure of three ionic liquid electrolytes, [pyr14][TFSI], [pyr13][FSI], and [EMIM][BF4], using molecular dynamics and polarizable force fields. In this respect, our focus is on the properties of the electric double layer (EDL) formed by the electrolytes at the electrode surface as a function of surface potential (Psi). The rates of EDL formation are found to be on the order of hundreds of picoseconds and only slightly influenced by the addition of Li-salt. The EDLs of three electrolytes are shown to have different energy storage capacities, which we relate to the EDL formation free energy. The differential capacitance obtained from our computations exhibits asymmetry about the potential of zero charge and is consistent with the camel-like profiles noted from mean field theories and experiments on metallic electrodes. The introduction of Li-salt reduces the noted asymmetry in the differential capacitance profile. Complementary experimental capacitance measurements have been made on our three electrolytes in their neat forms and with Li-salt. The measurements, performed on glassy carbon electrodes, produce U-like profiles, and Li-salt doping is shown to strongly affect capacitance at high magnitudes of Psi. Differences in the theoretical and experimental shapes and magnitudes of capacitance are rationalized in terms of the electrode surface and pseudocapacitive effects. In both neat and Li-doped liquids, the details of the computational capacitance profile are well described by Psi-induced changes in the density and molecular orientation of ions in the molecular layer closest to the electrode. Our results suggest that the addition of Li+ induces disorder in the EDL, which originates from the strong binding of anions to Li+. An in-depth analysis of the distribution of Li+ in the EDL reveals that it does not readily enter the molecular layer at the electrode surface, preferring instead to be localized farther away from the surface in the second molecular layer. This behavior is validated through an analysis of the free energy of Li+ solvation as a function of distance from the electrode. Free energy wells are found to coincide with localized concentrations of Li+, the depths of which increase with Psi and suggest a source of impedance for Li+ to reach the electrode.

Haskins, Justin B.↗

DOE OSTI2020

Time-Resolved Spectroscopy of Insulator-Metal Transitions: Exploring Low-Energy Dynamics in Strongly Correlated Systems. Final Report

Transition metal oxides (TMOs) have attracted much attention in recent years. The strong coupling between charge, spin, and orbital degrees of freedom creates novel functional properties. The research at the interplay between ferromagnetism, ferroelectricity and conductivity provides a promising way to the development of future spintronic devices. The interface characterization of multifunctional oxide heterostructures is crucial to understand deeply the magnetic response, spin injection and spin transport. In year one, we characterized optically the magnetic property with the method of magnetization-induced second-harmonic generation (MSHG), which is a sensitive technique to selectively probe the interface where the spatial inversion symmetry is broken. The interface of n-type BaTiO 3 (BTO)/La 0.67 Sr 0.33 MnO 3 (LSMO) forms a Schottky barrier and displays a good diode effect. By applying an external electric field across the sample, we observe the magnetoelectric (ME) coupling effect to modulate the interface magnetization. The voltage dependent magnetic contrast sharply vanishes at positive voltage (applied to LSMO contact) and reveals a ferromagnetic (FM)-to- antiferromagnetic (AFM) transition occurring at the interface, while the magneto-optic Kerr effect (MOKE) indicates that the bulk property is not affected. The strain mediated mechanism and ferroelectric (FE) polarization induced charge medicated mechanism are both discussed, but they do not play an important role in the observed magnetization transition. A new mechanism is proposed - the injected minority spins through strong Hund's interaction with the local magnetic moments at positive voltage weaken the double-exchange interaction of nearby Mn e g electrons, thereby reducing the ferromagnetic (FM) ordering. The dominant superexchange interaction of localized t 2g electrons finally leads to the AFM configuration. By reducing the electron carrier concentration of BTO, a positive voltage shift of the transition is observed. The oxygen richer sample with lower carrier concentration requires a higher voltage to increase the hole doping level of LSMO to induce the interfacial AFM phase. By inserting a thin (1nm) La 0.5 Ca 0.5 MnO 3 layer between BTO and LSMO, the interface magnetic response from LSMO is enhanced. In year two, a non-multiferroic heterostructure SrTiO 3 (STO)/ La 0.5 Ca 0.5 MnO 3 (LCMO)/La 0.67 Sr 0.33 MnO 3 (LSMO) was studied. In this system, the interface FM-AFM transition is observed at negative voltage. The STO layer may act as a hole-donating layer, which induces the hole transfer to LSMO making it overdoped, while the LCMO interlayer at the 0.5 hole doping level displays complicated CE type AFM phase. Thus the AFM phase is dominant at the interface and electron accumulation is required to induce the FM phase by applying a negative voltage. For oxygen rich sample, the magnetic MSHG loop reappears at high positive voltage (around +2.5 V). At high doping level (x > 0.5), LSMO exhibits A-type AFM order, consisting of AFM superexchange coupling between adjacent layers and intralayer FM double-exchange coupling. The less tensile strain of STO and LSMO due to a smaller lattice mismatch as compared to BTO would result in a weaker interlayer coupling . Thus, interfacial A-type AFM order can occur in STO/LCMO/LSMO heterostructure at high hole doping concentration. The study of ME coupling of multifunctional oxide heterostructures is definitely important to the development and performance of future spintronic devices. The results presented here regarding the interfacial magnetic transition controlled by an external electric field offer some new perspective to study the spin transport of magnetic tunnel junctions.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Correlation Between Corrugation-Induced Flexoelectric Polarization and Conductivity of Low-Dimensional Transition Metal Dichalcogenides

The tunability of polar and semiconducting properties of low-dimensional transition metal dichalcogenides (TMDs) have propelled them to the forefront of fundamental and applied physical research. These materials can vary their electrophysical properties from nonpolar to ferroelectric, and from direct-band semiconducting to metallic. In addition to classical controlling factors, such as field effect, composition, and doping, new degrees of freedom emerge in TMDs due to the curvature-induced electron redistribution and the associated changes in electronic properties. Here we theoretically explore the elastic and electric fields, flexoelectric polarization and free charge density for a TMD nanoflake placed on a rough substrate with a sinusoidal corrugation profile. Finite element modelling results for different flake thickness and corrugation depth yield insights into the flexoelectric nature of the out-of-plane electric polarization and establish the unambiguous correlation between the polarization and static conductivity modulation. The modulation is caused by the coupling between the deformation potential and inhomogeneous elastic strains, which evolve in the TMD nanoflake due to the adhesion between the flake surface and corrugated substrate. We reveal a pronounced maximum in the thickness dependences of the electron and hole conductivity of MoS 2 and MoTe 2 nanoflakes placed on a corrugated substrate, which opens the way for the optimization of their geometry towards significant improvement in their polar and electronic properties, necessary for advanced applications in nanoelectronics and memory devices. Specifically, the obtained results can be useful for the development of nanoscale straintronic devices based on the bended MoS 2 , MoTe 2 , and MoSTe nanoflakes, such as diodes and bipolar transistors with a bending-controllable sharpness of p-n junctions.

42 ENGINEERING↗

DOE OSTI2023

Effect of Pt vacancies on magnetotransport of Weyl semimetal candidate GdPtSb epitaxial films

Here, we examine the effects of Pt vacancies on the magnetotransport properties of Weyl semimetal candidate GdPtSb films, grown by molecular beam epitaxy on c-plane sapphire. Rutherford backscattering spectrometry and x-ray diffraction measurements suggest that phase-pure GdPt x ⁢Sb films can accommodate up to 15% of Pt vacancies (x = 0.85), which act as acceptors, as measured by the Hall effect. Two classes of electrical transport behavior are observed. Pt-deficient films display metallic temperature-dependent resistivity (dρ/dT > 0). The longitudinal magnetoresistance (LMR, magnetic field B parallel to electric field E) is more negative than transverse magnetoresistance (TMR, B⁢⊥⁢E), consistent with the expected chiral anomaly for a Weyl semimetal. The combination of Pt-vacancy disorder and doping away from the expected Weyl nodes, however, suggests that conductivity fluctuations may explain the negative LMR rather than chiral anomaly. Samples closer to stoichiometry display the opposite behavior: semiconductorlike resistivity (dρ/dT > 0) and more negative TMR than LMR. Hysteresis and other nonlinearities in the low-field Hall effect and magnetoresistance suggest that spin-disorder scattering and possible topological Hall effect may dominate the near-stoichiometric samples. Our findings highlight the complications of transport-based identification of Weyl nodes but point to possible topological spin textures in GdPtSb.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2025

Chern Insulators at Integer and Fractional Filling in Moiré Pentalayer Graphene

The advent of moiré platforms for engineered quantum matter has led to discoveries of integer and fractional quantum anomalous Hall effects, with predictions for correlation-driven topological states based on electron crystallization. Here, we report an array of trivial and topological insulators formed in a moiré lattice of rhomobohedral pentalayer graphene (R5G). At a doping of one electron per moiré unit cell ( ν = 1 ), we see a correlated insulator with a Chern number that can be tuned between C = 0 and + 1 by an electric displacement field. This is accompanied by a series of additional Chern insulators with C = + 1 originating from fractional fillings of the moiré lattice— ν = 1 / 4 , 1 / 3 , and 2 / 3 —associated with the formation of moiré-driven topological electronic crystals. At ν = 2 / 3 the system exhibits an integer quantum anomalous Hall effect at zero magnetic field, but further develops hints of an incipient C = 2 / 3 fractional Chern insulator in a modest field. Our results establish moiré R5G as a fertile platform for studying the competition and potential intertwining of integer and fractional Chern insulators. Published by the American Physical Society 2025

Waters, Dacen (ORCID:0000000335880039)↗