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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 577 records · Page 32
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Polarization controlled deep sub-wavelength periodic features written by femtosecond laser on nanodiamond thin film surface

Deep sub-wavelength (Λ/λ = ∼0.22) periodic features are induced uniformly on a nanodiamond (ND) thin film surface using femtosecond (fs) laser irradiation (pulse duration = ∼110 fs and central wavelength of ∼800 nm). The topography of the surface features is controlled by the laser polarization. Orientation of features is perpendicular to laser polarization. Periodicity (spatial periodicity of < λ/4) of the surface features is less than the laser wavelength. This work gives an experimental proof of polarization controlled surface plasmon-fs laser coupling mechanism prompting the interaction between fs laser and solid matter (here ND thin film) which in turn is resulting in the periodic surface features. Scanning electron microscopy in conjunction with micro Raman scattering, X-ray diffraction, and atomic force microscopy are carried out to extract surface morphology and phase information of the laser irradiated regions. This work demonstrates an easy and efficient surface fabrication technique.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Structural and optical properties of DC reactive magnetron sputtered zinc aluminum oxide thin films

Highly transparent conductive Zinc Aluminum Oxide (ZAO) thin films have been deposited on glass substrates using DC reactive magnetron sputtering method. The thin films were deposited at 200 °C and post-deposition annealing from 15 to 90 min. XRD patterns of ZAO films exhibit only (0 0 2) diffraction peak, indicating that they have c-axis preferred orientation perpendicular to the substrate. Scanning electron microscopy (SEM) is used to study the surface morphology of the films. The grain size obtained from SEM images of ZAO thin films are found to be in the range of 20 - 26 nm. The minimum resistivity of 1.74 × 10{sup −4} Ω cm and an average transmittance of 92% are obtained for the thin film post annealed for 30 min. The optical band gap of ZAO thin films increased from 3.49 to 3.60 eV with the increase of annealing time due to Burstein-Moss effect. The optical constants refractive index (n) and extinction coefficient (k) were also determined from the optical transmission spectra.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Preparation and characterisation of nanoscale α-Al{sub 2}O{sub 3} by precipitation method

Nanometer-scale α-Al{sub 2}O{sub 3} particles have been synthesized by a simple precipitation method from an aqueous solution in the presence of AlCl{sub 3} and NH{sub 3}. The surface morphology and composition of the as-synthesized Al{sub 2}O{sub 3} nanoparticle were characterized by means of scanning electron microscopy (SEM) and X-ray diffraction (XRD). The powder was nanocrystalline in nature having hexagonal structure with unit cell parameters: a=4.76A°, c=12.99A°. The Al{sub 2}O{sub 3} nanocrystallites with an average crystal size of about 86 nm. The powder has been characterized by means of FT-IR, and UV-Vis Study. From these results it is possible to conclude that the precipitation method is a very suitable technique to prepare α-Al{sub 2}O{sub 3} materials. The technique is fast, low cost and produces well defined materials that can be used for dosimetric applications.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Synthesis and Raman analysis of SnS nanoparticles synthesized by PVP assisted polyol method

SnS film was prepared by a simple drop casting method after synthesizing SnS nanoparticles by using PVP assisted polyol method. Confocal Raman study was carried out for the as deposited and annealed (150, 300 and 400 °C) films at two different excitation wavelengths 514 and 785 nm. At the excitation wavelength of 514 nm, the Raman modes showed for a mixed phase of SnS and SnS{sub 2} up to 150 °C and then only a pure SnS phase was observed up to 400 °C due to the dissociation of SnS{sub 2} in to SnS by releasing S. The increase in intensity of Raman (A{sub g} and B{sub 3g}) as well as IR (B{sub 3u}) active modes of SnS are observed with increasing annealing temperature at excitation wavelength 785 nm due to the increased crystallinity and inactiveness of SnS{sub 2} modes. X-ray diffraction confirming the formation of a single phase of SnS while the greater homogeneity in both size and shape of SnS nanoparticles were confirmed through surface morphology from SEM.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Graphite edge controlled registration of monolayer MoS{sub 2} crystal orientation

Transition metal dichalcogenides such as the semiconductor MoS{sub 2} are a class of two-dimensional crystals. The surface morphology and quality of MoS{sub 2} grown by chemical vapor deposition are examined using atomic force and scanning tunneling microscopy techniques. By analyzing the moiré patterns from several triangular MoS{sub 2} islands, we find that there exist at least five different superstructures and that the relative rotational angles between the MoS{sub 2} adlayer and graphite substrate lattices are typically less than 3°. We conclude that since MoS{sub 2} grows at graphite step-edges, it is the edge structure which controls the orientation of the islands, with those growing from zig-zag (or armchair) edges tending to orient with one lattice vector parallel (perpendicular) to the step-edge.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Defects evolution and their impacts on conductivity of indium tin oxide thin films upon thermal treatment

Indium tin oxide (ITO) thin films were deposited on silicon substrates by radio-frequency magnetron sputtering. The influence of annealing temperature on the crystallite, surface morphology, defects evolution, and electrical property of the thin films was studied. The conductivity of the ITO films was significantly enhanced by two orders of magnitude by increasing the annealing temperature up to 600 °C, which was interpreted in point view of defects evolution in ITO films as revealed by positron annihilation. It was interesting to find that positron diffusion length was amazingly comparable to crystallite size in ITO films annealed below 300 °C, indicating positrons were preferentially localized and annihilated in defects around crystallite boundaries. By further increasing the temperature, positron diffusion length was far beyond the grain size with little increment. This demonstrated that defects were effectively removed around grain boundaries. The results indicated defect structure around crystallite/grain boundaries played an important role on carrier transportation in nanocrystal ITO films.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Molecular beam epitaxy growth and optical properties of InAsSbBi

The molecular beam epitaxy growth and optical properties of the III-V semiconductor alloy InAsSbBi are investigated over a range of growth temperatures and V/III flux ratios. Bulk and quantum well structures grown on the (100) on-axis and offcut GaSb substrates are examined. Bismuth readily incorporates at growth temperatures around 300 °C but results in materials with limited optical quality. Conversely, higher growth temperatures around 400 °C yield improved optical performance but with limited Bi incorporation. Photoluminescence spectroscopy is used to examine the optical properties and bandgap energies of InAsSbBi layers grown at temperatures from 400 to 430 °C using 0.91 and 0.94 As/In flux ratios, 0.10 and 0.12 Sb/In flux ratios, and 0.05 and 0.10 Bi/In flux ratios. Emission is observed from low to room temperature with peaks ranging from 3.7 to 4.6 μm. The relationships between Bi incorporation, surface morphology, growth temperature, and group-V flux are examined. Large concentrations of Bi-rich surface features are observed on samples where the incident Bi flux neither fully incorporates nor desorbs but instead accumulates on the surface and coalesces into droplets.

Schaefer, S. T.↗
DOE OSTI2016

Ni-base superalloy powder-processed porous layer for gas cooling in extreme environments

Extreme high temperature conditions demand novel solutions for hot gas filters and coolant access architectures, i.e., porous layers on exposed components. These high temperatures, for example in current turbine engines, are at or exceeding current material limits for high temperature oxidation/corrosion, creep resistance, and, even, melting temperature. Thus novel blade designs allowing greater heat removal are required to maintain airfoil temperatures below melting and/ or rapid creep deformation limits. Gas atomized Ni-base superalloy powders were partially sintered into porous layers to allow full-surface, transpirational cooling of the surface of airfoils. Furthermore, these powder-processed porous layers were fully characterized for surface, morphology, cross-sectional microstructure, and mechanical strength characteristics. A sintering model based on pure Ni surface diffusion correlated well with the experimental results and allowed reasonable control over the partial sintering process to obtain a specified level of porosity within the porous layer.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Inductively coupled plasma–reactive ion etching of c- and a-plane AlGaN over the entire Al composition range: Effect of BCl{sub 3} pretreatment in Cl{sub 2}/Ar plasma chemistry

Inductively coupled plasma (ICP)–reactive ion etching (RIE) patterning is a standard processing step for UV and optical photonic devices based on III-nitride materials. There is little research on ICP-RIE of high Al-content AlGaN alloys and for nonpolar nitride orientations. The authors present a comprehensive study of the ICP-RIE of c- and a-plane AlGaN in Cl{sub 2}/Ar plasma over the entire Al composition range. The authors find that the etch rate decreases in general with increasing Al content, with different behavior for c- and a-plane AlGaN. They also study the effect of BCl{sub 3} deoxidizing plasma pretreatment. An ICP deoxidizing BCl{sub 3} plasma with the addition of argon is more efficient in removal of surface oxides from Al{sub x}Ga{sub 1−x}N than RIE alone. These experiments show that Al{sub x}Ga{sub 1−x}N etching is affected by the higher binding energy of AlN and the higher affinity of oxygen to aluminum compared to gallium, with oxides on a-plane AlGaN more difficult to etch as compared to oxides on c-plane AlGaN, specifically for high Al composition materials. The authors achieve reasonably high etch rate (∼350 nm/min) for high Al-content materials with a smooth surface morphology at a low DC bias of ∼−45 VDC.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Study of the I-V characteristics of nanostructured Pd films on a Si substrate after vacuum annealing

The I-V characteristics of nanostructured Pd films on a Si substrate are investigated. The nanostructures (nanoislands) are formed by the vacuum annealing of continuous ultrathin Pd films sputtered onto a substrate. The shape of the I-V characteristics of the investigated Si substrate-Pd film system is shown to be heavily dependent on the degree of film nanostructuring. The surface morphology of the films is studied using scanning electron microscopy.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Tritium retention in reduced-activation ferritic/martensitic steels

Reduced-activation ferritic/martensitic (RAFM) steels are structural material candidates for breeding blankets of future fusion reactors. Therefore, tritium (T) retention in RAFM steels is an important problem in assessing the T inventory of blankets. In this study, specimens of RAFM steels were subjected to irradiation of 20 MeV W ions to 0.54 displacements per atom (dpa), exposure to high flux D plasmas at 400 and 600 K and that to pulsed heat loads. The specimens thus prepared were exposed to DT gas at 473 K. Despite severe modification in the surface morphology, heat loads had negligible effects on T retention. Significant increase in T retention at the surface and/or subsurface was observed after D plasma exposure. However, T trapped at the surface/subsurface layer was easily removed by maintaining the specimens in the air at about 300 K. Displacement damage led to increase in T retention in the bulk due to the trapping effects of defects, and T trapped was stable at 300 K. It was therefore concluded that displacement damages had the largest influence on T retention under the present conditions.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Durable and Low-Cost Fractal Structured Multifunctional Coatings for Next-Generation CSP

Fractal coatings on various low-cost and high-temperature metallic substrates such as SS316, SS347, In800H, In740H, In625, Haynes 230, etc. were fabricated employing our patented novel electrodeposition process at various deposition potentials and deposition times, as well as chemical etching. The best combination of the materials and processing conditions were co-optimized for the reliable and repeatable fabrication of the multifunctional coatings. Surface morphologies were examined using SEM and AFM, and fractal characterization was done using a 3D optical surface profiler. Fractal dimension was used to identify successful fabrication and material parameters. The mechanical durability of the coatings was evaluated using several standardized tests, such as sand abrasion (ASTM D968) and adhesion (ASTM D3359), to fully characterize and demonstrate the mechanical durability of the fabricated surfaces. HTF immersion tests on the fractal multifunctional coatings were conducted based on a modification of the ASTM D870, which is established for static water immersion testing. To calculate the corrosion rates and descaled weight loss of the samples subjected to thermal exposure for different time durations (100 h, 300 h, 500 h, and optionally 750 h) to estimate the corrosion rate. While protecting the substrates from corrosion is an important goal, an allied goals is also to examine the post-corrosion temperature stability and properties of the molten salts themselves due to the dissolution of the constituents of the alloys and the corrosion products from the coatings that cause “fouling” of the molten salts. Fouling characteristics of the different molten salt HTFs exposed to coated and uncoated substrates were investigated. Finally, considering a prototype molten salt/sCO2 heat exchanger, cost/performance model is developed to demonstrate that the coatings on low-cost alloys such as stainless steel provide lower levelized cost of heat exchanger compared to high nickel content Ha230.

14 SOLAR ENERGY↗
DOE OSTI2024

Neutron and photon in-vivo materials characterization at the evolving plasma-material interface in plasma-burning fusion environments

This report includes the first set of MOSS data collected in the context of fusion-relevant plasma-material interactions. The data collected show that the surface curvature and stress irreversibly change during low-energy deuterium ion irradiation. This holds for both tungsten thin films, bulk tungsten, and single-crystal silicon. Meanwhile, argon irradiation did not produce this same effect. The surface morphology of the exposed samples was virtually identical regardless of gas species. There were, however, some surface chemistry differences between argon-exposed and deuterium-exposed samples, mainly concerning the oxide states of the W4f XPS signal. The changes in surface chemistry could be due to hydrogen dynamics on the tungsten surfaces, though further investigation will be required with in-situ irradiation and analysis. The changes in surface stress could also not be explained by temperature alone, as the temperature reached during the ion irradiations was too low to induce non-elastic strain. With this in mind, deuterium retention in the materials could change the surface curvature and stress. To confirm this, further work will be needed to quantify the change in curvature and relate it to ion flux, fluence, and deuterium retention. Unfortunately, when this work was conducted, the experimental setup for thermal desorption spectroscopy was not operating correctly, and that work could not be included in this dissertation. Despite experimental difficulties, this work shows the first results of a promising technique to study deuterium dynamics in tungsten-based reconstituted thin films.

36 MATERIALS SCIENCE↗
DOE OSTI2023

GaN MOCVD Growth on Native substrates for High Voltage (15-20 KV) Vertical Power Devices

This project aims to develop metalorganic chemical vapor deposition (MOCVD) homoepitaxy of GaN on native substrates with fast growth rate (15-20 μm/hr), low background doping (low-10 15 cm -3 ) and smooth surface morphology via comprehensive understanding of the crystal growth process including high quality GaN substrate development and surface preparation, impurity and native defects control, and their impacts on the breakdown field. The team successfully developed a new growth process by introducing the laser-assisted MOCVD (LA-MOCVD) process to address the limited growth rates of GaN in the traditional MOCVD process. Specifically, the use of the CO2 laser with lasing wavelength of 9.219 μm, the strong coupling between the laser beam with the ammonia (GaN MOCVD precursor) leads to efficient decomposition of NH3 which significantly increases the effective group V/III molar ratio and thus suppresses C impurity incorporation in MOCVD GaN. The reduction in C incorporation in LA-MOCVD GaN is especially prominent when the GaN growth rate is fast (> 10 μm/hr), which allows to develop thick GaN films with high crystalline quality and low controllable doping needed for vertical high power device applications. The results of this project lead to the demonstration of vertical GaN PN diodes with record breakdown voltage of ~ 8kV with high Baliga’s figure of merit.

24 POWER TRANSMISSION AND DISTRIBUTION↗
NASA NTRS1980

Anomalous region on Mars - Implications for near-surface liquid water

An anomalous region has been identified on Mars from the 1971 and 1973 earth-based Goldstone radar data. This region is characterized by coincident very high radar reflectivities and unusual smoothness. Very few realistic surface morphologies can generate such return-signals. Liquid water within about 50-100 cm of the surface is one possibility, an interpretation strengthened by an apparent seasonal variation in surface reflectivity for the same locality.

Zisk, S. H.↗
NASA NTRS1985

Geologic Interpretation of Remote Sensing Data for the Martian Volcano, Ascraeus Mons

Results of an investigation to relate remotely determined physical properties on Ascraeus Mons to the geologic history of the volcano are summarized. Products include a 1:2,000,000-scale photogeologic map of Ascraeus Mons and its environs; a 1:250,000-scale corrected thermal-inertia map of the summit caldera complex; four corrected thermal-inertia profiles across the volcano from high-resolution thermal data; fourteen low-resolution thermal sequences providing corrected thermal inertias for the volcano throughout half a Martian year; and a calibrated three-color photograph of the volcano. These data were combined with published spectral-reflectance, radar, and atmospheric water-vapor data relating to Acraeus Mons. Photogeologic mapping indicates that the sequence of events at Acraeus Mons is more complex than previously described. The plains surrounding the volcano include numerous flows, some of which can be traced to the flank of the volcano and some to different locations along the Tharsis Ridge. Surface morphology in the summit area is very distinct for features 100 m in scale, but the surface relief and tonal contrast steadily decrease toward the base of the shield, indicating modification by deposition or erosion.

Zimbelman, J.↗
NASA NTRS1986

Thermal smoothing of rough surfaces in vacuo

The derivation of equations governing the smoothing of rough surfaces, based on Mullins' (1957, 1960, and 1963) theories of thermal grooving and of capillarity-governed solid surface morphology is presented. As an example, the smoothing of a one-dimensional sine-shaped surface is discussed.

Wahl, G.↗
NASA NTRS1991

In-situ sputtering of YBCO films for microwave applications

RF magnetron sputtering from a single YBCO target onto a heated substrate (700 C) was used to obtain c-axis-oriented 1-2-3 films that are superconducting without a subsequent annealing or oxygenation step, with Tc(R = 0) as high as 88 K on MgO and LaAlO3 substrates. This process uses an 8-in-diameter target in the sputter-up configuration, with a central grounded shield to eliminate negative ion bombardment. It can reproducibly and uniformly cover substrates as large as 3-in across at rates exceeding 1 A/s. Maintaining film composition very close to stoichiometry is essential for obtaining films with good superconducting properties and surface morphology. Optimum films have critical currents of 1 MA/sq cm at 77 K. Measurements of microwave surface resistance based on a stripline resonator indicate low surface resistance for unpatterned YBCO ground planes, but excess loss and a strong power dependence in a patterned center strip.

Ballentine, P. H.↗