Search NASA⌕ Search

SEARCH · Search NASA

Results for “memory”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 595 records · Page 33
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

Electronic shift register memory based on molecular electron-transfer reactions

The design of a shift register memory at the molecular level is described in detail. The memory elements are based on a chain of electron-transfer molecules incorporated on a very large scale integrated (VLSI) substrate, and the information is shifted by photoinduced electron-transfer reactions. The design requirements for such a system are discussed, and several realistic strategies for synthesizing these systems are presented. The immediate advantage of such a hybrid molecular/VLSI device would arise from the possible information storage density. The prospect of considerable savings of energy per bit processed also exists. This molecular shift register memory element design solves the conceptual problems associated with integrating molecular size components with larger (micron) size features on a chip.

Hopfield, J. J.↗
NASA NTRS1991

Conditional Probability And The Sparse Distributed Memory

Report presents conditional-probability interpretation of Kanerva's sparse distributed memory (SDM). SDM is conceptual digital electronic memory in which addresses chosen sparsely in space of many dimensions and content of memory at each address positive or negative integer written (incremented or decremented) or read according to special rules. Contents of SDM constitute Monte Carlo approximation to multidimensional conditional-probability integral.

Anderson, Charles H.↗
NASA NTRS1991

Associative-Memory Array Of Optical Logic Gates

Experimental optical associative-memory apparatus measures similarity or dissimilarity between input binary image and each of M binary images in memory. Uses Hamming distance as measure of dissimilarity, determines which (if any) of memory images closely or most closely resembles input image. Indicates this match by displaying image (e.g., recognized image or symbol, word, number, or other substitute image) in real time on output plane.

Chao, Tien-Hsin↗
NASA NTRS1990

Programming distributed memory architectures using Kali

Programming nonshared memory systems is more difficult than programming shared memory systems, in part because of the relatively low level of current programming environments for such machines. A new programming environment is presented, Kali, which provides a global name space and allows direct access to remote data values. In order to retain efficiency, Kali provides a system on annotations, allowing the user to control those aspects of the program critical to performance, such as data distribution and load balancing. The primitives and constructs provided by the language is described, and some of the issues raised in translating a Kali program for execution on distributed memory systems are also discussed.

Mehrotra, Piyush↗
NASA NTRS1991

Shared versus distributed memory multiprocessors

The question of whether multiprocessors should have shared or distributed memory has attracted a great deal of attention. Some researchers argue strongly for building distributed memory machines, while others argue just as strongly for programming shared memory multiprocessors. A great deal of research is underway on both types of parallel systems. Special emphasis is placed on systems with a very large number of processors for computation intensive tasks and considers research and implementation trends. It appears that the two types of systems will likely converge to a common form for large scale multiprocessors.

Jordan, Harry F.↗
NASA NTRS1991

Efficient packing of patterns in sparse distributed memory by selective weighting of input bits

When a set of patterns is stored in a distributed memory, any given storage location participates in the storage of many patterns. From the perspective of any one stored pattern, the other patterns act as noise, and such noise limits the memory's storage capacity. The more similar the retrieval cues for two patterns are, the more the patterns interfere with each other in memory, and the harder it is to separate them on retrieval. A method is described of weighting the retrieval cues to reduce such interference and thus to improve the separability of patterns that have similar cues.

Kanerva, Pentti↗
NASA NTRS1991

Differential memory in the earth's magnetotail

The process of 'differential memory' in the earth's magnetotail is studied in the framework of the modified Harris magnetotail geometry. It is verified that differential memory can generate non-Maxwellian features in the modified Harris field model. The time scales and the potentially observable distribution functions associated with the process of differential memory are investigated, and it is shown that non-Maxwelllian distributions can evolve as a test particle response to distribution function boundary conditions in a Harris field magnetotail model. The non-Maxwellian features which arise from distribution function mapping have definite time scales associated with them, which are generally shorter than the earthward convection time scale but longer than the typical Alfven crossing time.

Burkhart, G. R.↗
NASA NTRS1992

Compact Spare-Row Decoder For Computer Memory

Spare-row memory-address-decoder circuit commanded to address ninth row in computer memory instead of addressing one of eight others it would address normally. Variants used to construct small, highly reliable computers. Spare-row decoder offers advantages of compactness, efficiency, and performance. Requires only 12.5 percent memory overhead. System equipped with spare-row decoder requires less glue logic and exhibits greater through-put. Applications include computers in Hitchhiker Central Unit embedded computer on Cassini spacecraft. Concept of circuit applicable to most flight computer systems.

Katz, Richard B.↗
NASA NTRS1992

Memory Network For Distributed Data Processors

Universal Memory Network (UMN) is modular, digital data-communication system enabling computers with differing bus architectures to share 32-bit-wide data between locations up to 3 km apart with less than one millisecond of latency. Makes it possible to design sophisticated real-time and near-real-time data-processing systems without data-transfer "bottlenecks". This enterprise network permits transmission of volume of data equivalent to an encyclopedia each second. Facilities benefiting from Universal Memory Network include telemetry stations, simulation facilities, power-plants, and large laboratories or any facility sharing very large volumes of data. Main hub of UMN is reflection center including smaller hubs called Shared Memory Interfaces.

Bolen, David↗
NASA NTRS1991

Total recall in distributive associative memories

Iterative error correction of asymptotically large associative memories is equivalent to a one-step learning rule. This rule is the inverse of the activation function of the memory. Spectral representations of nonlinear activation functions are used to obtain the inverse in closed form for Sparse Distributed Memory, Selected-Coordinate Design, and Radial Basis Functions.

Danforth, Douglas G.↗
NASA NTRS1990

Automatic ground control point recognition with parallel associative memory

The basic principle of the associative memory is to match the unknown input pattern against a stored training set, and responding with the 'closest match' and the corresponding label. Generally, an associative memory system requires two preparatory steps: selecting attributes of the pattern class, and training the system by associating patterns with labels. Experimental results gained from using Parallel Associative Memory are presented. The primary concern is an automatic search for ground control points in aerial photographs. Synthetic patterns are tested followed by real data. The results are encouraging as a relatively high level of correct matches is reached.

Al-Tahir, Raid↗
NASA NTRS1993

Vertical-Bloch-Line Memory

Vertical-Bloch-line memory is developmental very-large-scale integrated-circuit block-access magnetic memory. Stores data in form of localized pairs of twists (VBL pairs) in magnetic field at edge of ferromagnetic domain in each stripe. Presence or absence of VBL pair at bit position denotes one or zero, respectively. Offers advantages of resistance to ionizing radiation, potential areal storage density approximately less than 1 Gb/cm squared, data rates approximately less than 1 Gb/s, and average access times of order of milliseconds. Furthermore, mass, volume, and demand for power less than other magnetic and electronic memories.

Katti, Romney R.↗
NASA NTRS1993

Rapid, Nondestructive Readout From Ferroelectric Memory

Proposed devices with nondestructive readout offer attractive alternatives for rugged, solid-state memories suitable for contactless optical addressing and parallel processing and for nonvolatile analog memories. Pulses of light from lasers induce photoresponses in ferroelectric capacitors. Magnitude and polarity of response of each capacitor indicates magnitude and polarity of remanent polarization which, in turn, represents datum stored in that memory cell.

Thakoor, Sarita↗
NASA NTRS1993

Three-Dimensional Magnetic-Bubble Memory System

Proposed magnetic-bubble memory system includes stack of two-dimensional memory modules. Design enables overall storage density of system to be greater than prior magnetic-bubble memories. Provides nonvolatile storage, with readout access times in millisecond range. Has partly parallel input/output configuration supporting high-performance computing. Also relatively invulnerable to damage by ionizing radiation. Binary data, as represented by direction of magnetization of magnetic bubbles, reads out via Faraday effect.

Katti, Romney R.↗
NASA NTRS1992

High speed magneto-resistive random access memory

A high speed read MRAM memory element is configured from a sandwich of magnetizable, ferromagnetic film surrounding a magneto-resistive film which may be ferromagnetic or not. One outer ferromagnetic film has a higher coercive force than the other and therefore remains magnetized in one sense while the other may be switched in sense by a switching magnetic field. The magneto-resistive film is therefore sensitive to the amplitude of the resultant field between the outer ferromagnetic films and may be constructed of a high resistivity, high magneto-resistive material capable of higher sensing currents. This permits higher read voltages and therefore faster read operations. Alternate embodiments with perpendicular anisotropy, and in-plane anisotropy are shown, including an embodiment which uses high permeability guides to direct the closing flux path through the magneto-resistive material. High density, high speed, radiation hard, memory matrices may be constructed from these memory elements.

Wu, Jiin-Chuan↗
NASA NTRS1993

Mapping robust parallel multigrid algorithms to scalable memory architectures

The convergence rate of standard multigrid algorithms degenerates on problems with stretched grids or anisotropic operators. The usual cure for this is the use of line or plane relaxation. However, multigrid algorithms based on line and plane relaxation have limited and awkward parallelism and are quite difficult to map effectively to highly parallel architectures. Newer multigrid algorithms that overcome anisotropy through the use of multiple coarse grids rather than line relaxation are better suited to massively parallel architectures because they require only simple point-relaxation smoothers. The parallel implementation of a V-cycle multiple semi-coarsened grid (MSG) algorithm or distributed-memory architectures such as the Intel iPSC/860 and Paragon computers is addressed. The MSG algorithms provide two levels of parallelism: parallelism within the relaxation or interpolation on each grid and across the grids on each multigrid level. Both levels of parallelism must be exploited to map these algorithms effectively to parallel architectures. A mapping of an MSG algorithm to distributed-memory architectures that demonstrate how both levels of parallelism can be exploited is described. The results is a robust and effective multigrid algorithm for distributed-memory machines.

Overman, Andrea↗
NASA NTRS1994

Optically Addressable, Ferroelectric Memory With NDRO

For readout, memory cells addressed via on-chip semiconductor lasers. Proposed thin-film ferroelectric memory device features nonvolatile storage, optically addressable, nondestructive readout (NDRO) with fast access, and low vulnerability to damage by ionizing radiation. Polarization switched during recording and erasure, but not during readout. As result, readout would not destroy contents of memory, and operating life in specific "read-intensive" applications increased up to estimated 10 to the 16th power cycles.

Thakoor, Sarita↗