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Equivalent circuit and modified and approximate models for metal oxide semiconductor-field effect transistor devices, and adaptability to computerized circuit design
Ion implantation process for fabricating active devices in high bandgap semiconductor materials for high temperature operation
Electronic amplifier contains matched pair of metal oxide semiconductor field effect transistor devices which have high input impedance and long-term stability. Thermistor in feedback loop provides temperature compensation for large drifts in the sensor.
Progress made by NASA toward implementation of equipment for the conversion, management, and distribution of voltage power in space applications are reviewed. Work has been carried forward on components such as bipolar transistors, deep impurity semiconductors, conductors, dielectrics, magnetic devices, and rotary power transfer. Specific programs for the high voltage systems have included research on lightweight, low-cost conductors featuring graphite fibers containing electron donor materials for wires and cables with reduced mass and the conductivity of copper. Attention has also been given p-n junction technology for high-speed, high-current, high-voltage materials and diamond-like dielectric films which are hard, have high dielectric strength, and can operate up to 300 C. A transistor has been fabricated with a voltage of 1200 V at 100 A, with a gain of 10 and a 0.5 microsec rise/fall time. A 25 kW transformer has also been built which performs at 20 kHz with an efficiency of 99.2%.
Historically, microwave technology was developed by military and space agencies from around the world to satisfy their unique radar, communication, and science applications. Throughout this development phase, the sole goal was to improve the performance of the microwave circuits and components comprising the systems. For example, power amplifiers with output powers of several watts over broad bandwidths, low noise amplifiers with noise figures as low as 3 dB at 94 GHz, stable oscillators with low noise characteristics and high output power, and electronically steerable antennas were required. In addition, the reliability of the systems had to be increased because of the high monetary and human cost if a failure occurred. To achieve these goals, industry, academia and the government agencies supporting them chose to develop technologies with the greatest possibility of surpassing the state of the art performance. Thus, Si, which was already widely used for digital circuits but had material characteristics that were perceived to limit its high frequency performance, was bypassed for a progression of devices starting with GaAs Metal Semiconductor Field Effect Transistors (MESFETs) and ending with InP Pseudomorphic High Electron Mobility Transistors (PHEMTs). For each new material or device structure, the electron mobility increased, and therefore, the high frequency characteristics of the device were improved. In addition, ultra small geometry lithographic processes were developed to reduce the gate length to 0.1 pm which further increases the cutoff frequency. The resulting devices had excellent performance through the millimeter-wave spectrum.
Direct examination of atomic interactions is difficult. One powerful approach to visualizing atomic interactions is to study near-index-matched colloidal dispersions of microscopic plastic spheres, which can be probed by visible light. Such spheres interact through hydrodynamic and Brownian forces, but they feel no direct force before an infinite repulsion at contact. Through the microgravity flight of the Physics of Hard Spheres Experiment (PHaSE), researchers have sought a more complete understanding of the entropically driven disorder-order transition in hard-sphere colloidal dispersions. The experiment was conceived by Professors Paul M. Chaikin and William B. Russel of Princeton University. Microgravity was required because, on Earth, index-matched colloidal dispersions often cannot be density matched, resulting in significant settling over the crystallization period. This settling makes them a poor model of the equilibrium atomic system, where the effect of gravity is truly negligible. For this purpose, a customized light-scattering instrument was designed, built, and flown by the NASA Glenn Research Center at Lewis Field on the space shuttle (shuttle missions STS 83 and STS 94). This instrument performed both static and dynamic light scattering, with sample oscillation for determining rheological properties. Scattered light from a 532- nm laser was recorded either by a 10-bit charge-coupled discharge (CCD) camera from a concentric screen covering angles of 0 to 60 or by sensitive avalanche photodiode detectors, which convert the photons into binary data from which two correlators compute autocorrelation functions. The sample cell was driven by a direct-current servomotor to allow sinusoidal oscillation for the measurement of rheological properties. Significant microgravity research findings include the observation of beautiful dendritic crystals, the crystallization of a "glassy phase" sample in microgravity that did not crystallize for over 1 year in 1g (Earth's gravity), and the emergence of face-centered-cubic (FCC) crystals late in the coarsening process (as small crystallites lost particles to the slow ripening of large crystallites). Significant quantitative findings from the microgravity experiments have been developed describing complex interactions among crystallites during the growth process, as concentration fields overlap in the surrounding disordered phase. Time-resolved Bragg scattering under microgravity captures one effect of these interactions quite conclusively for the sample at a volume fraction of 0.528. From the earliest time until the sample is almost fully crystalline, the size and overall crystallinity grow monotonically, but the number of crystallites per unit volume (number density) falls. Apparently nucleation is slower than the loss of crystallites because of the transfer of particles from small to large crystals. Thus, coarsening occurs simultaneously with growth, rather than following the completion of nucleation and growth as is generally assumed. In the same sample, an interesting signature appears in the apparent number density of crystallites and the volume fraction within the crystallites shortly before full crystallinity is reached. A brief upturn in both indicates the creation of more domains of the size of the average crystallite simultaneous with the compression of the crystallites. Only the emergence of dendritic arms offers a reasonable explanation. The arms would be "seen" by the light scattering as separate domains whose smaller radii of curvature would compress the interior phase. In fiscal year 1999, numerous papers, a doctoral dissertation, and the PHaSE final report were produced. Although this flight project has been completed, plans are in place for a follow-on colloid experiment by Chaikin and Russel that employs a light microscope within Glenn's Fluids and Combustion Facility on the International Space Station. PHaSE is providing us with a deeper understanding of the nure of phase transitions. The knowledge derived has added to the understanding of condensed matter. In addition, the burgeoning study of the dynamics of colloidal self-assembly may lead to the development of a range of photonic materials that control the desirable properties of light. Thus, applications of ordered colloidal structures include not only ultrastructure ceramics, but also photonic crystals and photothermal nanosecond light-switching devices. Industries dealing with semiconductors, electro-optics, ceramics, and composites stand to benefit from such advancements.
Venus, the "greenhouse planet", is a scientifically fascinating place. A huge number of important scientific questions remain to be answered. Venus is sometimes called Earth's "sister planet" due to the fact that it is closest to the Earth in distance and similar to Earth in size. Despite its similarity to Earth, however, the climate of Venus is vastly different from Earth's. Understanding the atmosphere, climate, geology, and history of Venus could shed considerable light on our understanding of our own home planet. The surface of Venus is a hostile environment, with an atmosperic pressure of over 90 bar of carbon dioxide, temperature of 450 C, and shrouded in sulphuric-acid clouds. Venus has been explored by a number of missions from Earth, including the Russian Venera missions which landed probes on the surface, the American Pioneer missions which flew both orbiters and atmospheric probes to Venus, the Russian "Vega" mission, which floated balloons in the atmosphere of Venus, and most recently the American Magellan mission which mapped the surface by radar imaging. While these missions have answered basic questions about Venus, telling us the surface temperature and pressure, the elevations and topography of the continents, and the composition of the atmosphere and clouds, scientific mysteries still abound. Venus is of considerable interest to terrestrial atmospheric science, since of all the planets in the solar system, it is the closest analogue to the Earth in terms of atmosphere. Yet Venus' atmosphere is an example of "runaway greenhouse effect." Understanding the history and the dynamics of Venus' atmosphere could tell us considerable insight about the workings of the atmosphere of the Earth. It also has some interest to astrobiology-- could life have existed on Venus in an earlier, pre-greenhouse-effect phase? Could life still be possible in the temperate middle-atmosphere of Venus? The geology of Venus also has interest in the study of Earth. surface robot will require new technologies; specifically, it will require electronics, scientific instruments, power supplies, and mechanical linkages designed to operate at a temperature above 450 C-hot enough to melt the solder on a standard electronic circuit board. This will require devices made from advanced semiconductor materials, such as silicon carbide, or even new approaches, such as micro-vacuum tube electronics. Such materials are now being developed in the laboratory.
Cleanliness of manufactured parts and assemblies is a significant issue in many industries including disk drives, semiconductors, aerospace, and medical devices. Clean manufacturing requires cleanroom floor space and cleaning technology that are both expensive to own and expensive to operate. Strategies to reduce these costs are an important consideration. One strategy shown to be effective at reducing costs is to assemble parts into subassemblies and then clean the subassembly, rather than clean the individual parts first and then assemble them. One advantage is that assembly outside of the cleanroom reduces the amount of cleanroom floor space and its associated operating cost premium. A second advantage is that this strategy reduces the number of individual parts that must be cleaned prior to assembly, reducing the number of cleaning baskets, handling and, possibly, reducing the number of cleaners. The assemble then clean strategy also results in a part that is significantly cleaner because contamination generated during the assembly steps are more effectively removed that normally can be achieved by hand wiping after assembly in the cleanroom.
Magnetite is a common conductive mineral found on Earth and Mars. Disk-shaped precipitates approximately 40 nm in diameter have been shown to have manganese and aluminum concentrations. Atom-probe field-ion microscopy (APFIM) is the only technique that can potentially quantify the composition of these precipitates. APFIM will be used to characterize geological and planetary materials, analyze samples of interest for geomicrobiology; and, for the metrology of nanoscale instrumentation. Prior to APFIM sample preparation was conducted by electropolishing, the method of sharp shards (MSS), or Bosch process (deep reactive ion etching) with focused ion beam (FIB) milling as a final step. However, new methods are required for difficult samples. Many materials are not easily fabricated using electropolishing, MSS, or the Bosch process, FIB milling is slow and expensive, and wet chemistry and the reactive ion etching are typically limited to Si and other semiconductors. APFIM sample preparation using the dicing saw is commonly used to section semiconductor wafers into individual devices following manufacture. The dicing saw is a time-effective method for preparing high aspect ratio posts of poorly conducting materials. Femtosecond laser micromachining is also suitable for preparation of posts. FIB time required is reduced by about a factor of 10 and multi-tip specimens can easily be fabricated using the dicing saw.
Hetero-epitaxial semiconductor materials comprising cubic crystalline semiconductor alloys grown on the basal plane of trigonal and hexagonal substrates, in which misfit dislocations are reduced by approximate lattice matching of the cubic crystal structure to underlying trigonal or hexagonal substrate structure, enabling the development of alloyed semiconductor layers of greater thickness, resulting in a new class of semiconductor materials and corresponding devices, including improved hetero-bipolar and high-electron mobility transistors, and high-mobility thermoelectric devices.
An improved process has been developed for the efficient fabrication of carbon nanotube probes for use in atomic-force microscopes (AFMs) and nanomanipulators. Relative to prior nanotube tip production processes, this process offers advantages in alignment of the nanotube on the cantilever and stability of the nanotube's attachment. A procedure has also been developed at Ames that effectively sharpens the multiwalled nanotube, which improves the resolution of the multiwalled nanotube probes and, combined with the greater stability of multiwalled nanotube probes, increases the effective resolution of these probes, making them comparable in resolution to single-walled carbon nanotube probes. The robust attachment derived from this improved fabrication method and the natural strength and resiliency of the nanotube itself produces an AFM probe with an extremely long imaging lifetime. In a longevity test, a nanotube tip imaged a silicon nitride surface for 15 hours without measurable loss of resolution. In contrast, the resolution of conventional silicon probes noticeably begins to degrade within minutes. These carbon nanotube probes have many possible applications in the semiconductor industry, particularly as devices are approaching the nanometer scale and new atomic layer deposition techniques necessitate a higher resolution characterization technique. Previously at Ames, the use of nanotube probes has been demonstrated for imaging photoresist patterns with high aspect ratio. In addition, these tips have been used to analyze Mars simulant dust grains, extremophile protein crystals, and DNA structure.
A strategy for "Solid-State" Nuclear Power is proposed to guide development of technologies and systems into the second 50 years of nuclear spaceflight. The strategy emphasizes a simple and highly integrated system architecture with few moving parts or fluid loops; the leverage of modern advances in materials, manufacturing, semiconductors, microelectromechanical and nanotechnology devices; and the targeted advancement of high temperature nuclear fuels, materials and static power conversion to enable high performance from simple system topologies.
The prevailing means of electricity transmission through Direct Current (DC) and Alternating Current (AC) have limitations with the ongoing transition to renewable energy sources. In this paper, we discuss a new form of energy transmission, known as alternating direct current (ADC) that would provide significant savings in energy consumption and simultaneously allow efficient utilization of generated energy from renewable sources. This has become possible due to substantial advances in electronics and optoelectronics technologies since the days of Nicholas Tesla and Thomas Edison. Recent efforts of implementing the proposed ADC technology in relevant environments have demonstrated significant energy savings and opened a new paradigm that has the potential to provide an efficient and cost-effective pathway for transition to renewable energy sources even with the existing grid infrastructure. The DC power utilization initiated by Thomas Edison can be stored in battery arrangement but suffers from line loss and hence is not efficient for long-distance transmission. However, AC power developed by Nicholas Tesla cannot be stored efficiently but can be transmitted over long distances due to significantly lower line losses. Currently, AC power is the global foundational energy transmission methodology used because of events that took place over 135 years ago involving Edison, Tesla, and Westinghouse, and since AC power can transmit long distances from power plants to end users efficiently and economically. Approximately 50 years ago, the introduction of semiconductors in commercialized electronic devices and products changed the way people consume electricity. Also, over the years, the expanding adaptation of nonlinear loads has adversely affected the grid stability and hence the utility infrastructures worldwide.
A radiation imaging device (10). The radiation image device (10) comprises a subject radiation station (12) producing photon emissions (14), and at least one semiconductor crystal detector (16) arranged in an edge-on orientation with respect to the emitted photons (14) to directly receive the emitted photons (14) and produce a signal. The semiconductor crystal detector (16) comprises at least one anode and at least one cathode that produces the signal in response to the emitted photons (14).
It is now possible to grow silicon nanowires at chosen positions and orientations by a method that involves a combination of standard microfabrication processes. Because their positions and orientations can be chosen with unprecedented precision, the nanowires can be utilized as integral parts of individually electronically addressable devices in dense arrays. Nanowires made from silicon and perhaps other semiconductors hold substantial promise for integration into highly miniaturized sensors, field-effect transistors, optoelectronic devices, and other electronic devices. Like bulk semiconductors, inorganic semiconducting nanowires are characterized by electronic energy bandgaps that render them suitable as means of modulating or controlling electronic signals through electrostatic gating, in response to incident light, or in response to molecules of interest close to their surfaces. There is now potential for fabricating arrays of uniform, individually electronically addressable nanowires tailored to specific applications. The method involves formation of metal catalytic particles at the desired positions on a substrate, followed by heating the substrate in the presence of silane gas. The figure illustrates an example in which a substrate includes a silicon dioxide surface layer that has been etched into an array of pillars and the catalytic (in this case, gold) particles have been placed on the right-facing sides of the pillars. The catalytic thermal decomposition of the silane to silicon and hydrogen causes silicon columns (the desired nanowires) to grow outward from the originally catalyzed spots on the substrate, carrying the catalytic particles at their tips. Thus, the position and orientation of each silicon nanowire is determined by the position of its originally catalyzed spot on the substrate surface, and the orientation of the nanowire is perpendicular to the substrate surface at the originally catalyzed spot.
Through a Space Act Agreement, the NASA Lewis Research Center has helped develop the base silicon carbide (SiC) epitaxial growth technology for Westinghouse's efforts to bring silicon carbide products to the marketplace. SiC is a high-temperature, high-voltage semiconductor that can deliver greater than three times the power of conventional silicon devices. The technology was initially disclosed in the 1994 R&T report. NASA Lewis High Temperature Integrated Electronics and Sensors (HTIES) team is developing SiC as a material for advanced semiconductor electronic device applications because SiC-based electronics and sensors can operate in hostile environments where conventional silicon-based electronics cannot function. SiC transmitters hold great promise for television stations because they can convert broadcasts from analog to digital signals. A modular solid-state design provides broadcasters with an option to gradually add modules, increasing the power of their transmitters as they expand their high-definition television (HDTV) coverage. Using these high-power transistors will significantly reduce the space needed for high-power transmitters at television stations and will offer a solid-state solution, reducing long-term maintenance costs. Thus, transmitter manufacturers will be able to abandon their reliance on tube-based technology for high-power transmitters and will be able to build smaller, high-power, solid-state transmitters.
The Magneto-resistive Random Access Memory (MRAM) from Freescale Semiconductor, MR2A16A, was subjected to heavy ion single event testing. Test results show that this device is sensitive to Single Event Latchup (SEL). The sensitivity of the MRAM was attributed to the complementary metal oxide semiconductor (CMOS) process in which the active portion of this device is constructed. Therefore, the device must be used with caution and may require mitigation techniques if used in a space environment. There was no indication that the MRAM technology itself, the memory element construction, is subject to damage from heavy ions.
A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the binary and ternary semiconductors wherein in a single temperature step the binary semiconductor substrate is etched, a p-n junction with specific device characteristics is produced in the binary semiconductor substrate by diffusion of a dopant from the melt and a region of the ternary semiconductor of precise conductivity type and thickness is grown by virtue of a change in the melt characteristics when the etched binary semiconductor enters the melt.