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At least 631 records · Page 35

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NASA NTRS1989

Position-And-Direction Sensor For Light Beams

Optoelectronic sensor measures both position and direction of incidence of laser beam or other narrow beam of light. New sensor part of robotic welding system in which laser beam reflected from pool of molten metal and monitored by lateral-position sensor. To provide unambiguous measurement of both lateral position and direction of incident beam, sensor includes two position-sensitive photodetectors or linear arrays of photodetectors.

Smith, Matthew A.↗

NASA NTRS1988

Comparative point-spread function calculations for the MOMS-1, Thematic Mapper and SPOT-HRV instruments

Point-spread functions (PSF) comparisons were made between the Modular Optoelectronic Multispectral Scanner (MOMS-01), the LANDSAT Thematic Mapper (TM) and the SPOT-HRV instruments, principally near Lake Nakuru, Kenya. The results, expressed in terms of the width of the point spread functions at the 50 percent power points as determined from the in-scene analysis show that the TM has a PSF equal to or narrower than the MOMS-01 instrument (50 to 55 for the TM versus 50 to 68 for the MOMS). The SPOT estimates of the PSF range from 36 to 40. When the MOMS results are adjusted for differences in edge scanning as compared to the TM and SPOT, they are nearer 40 in the 575 to 625 nm band.

Salomonson, V. V.↗

NASA NTRS1989

Optical detectors for GaAs MMIC integration: Technology assessment

Fiber optic links are being considered to transmit digital and analog signals in phased array antenna feed networks in space communications systems. The radiating elements in these arrays will be GaAs monolithic microwave integrated circuits (MMIC's) in numbers ranging from a few hundred to several thousand. If such optical interconnects are to be practical it appears essential that the associated components, including detectors, be monolithically integrated on the same chip as the microwave circuitry. The general issue of monolithic integration of microwave and optoelectronic components is addressed from the point of view of fabrication technology and compatibility. Particular attention is given to the fabrication technology of various types of GaAs optical detectors that are designed to operate at a wavelength of 830 nm.

Claspy, P. C.↗

NASA NTRS1989

High-power single spatial mode AlGaAs channeled-substrate-planar semiconductor diode lasers for spaceborne communications

A high power single spatial mode channeled substrate planar AlGaAs semiconductor diode laser was developed. The emission wavelength was optimized at 860 to 880 nm. The operating characteristics (power current, single spatial mode behavior, far field radiation patterns, and spectral behavior) and results of computer modeling studies on the performance of the laser are discussed. Reliability assessment at high output levels is included. Performance results on a new type of channeled substrate planar diode laser incorporating current blocking layers, grown by metalorganic chemical vapor deposition, to more effectively focus the operational current to the lasing region was demonstrated. The optoelectronic behavior and fabrication procedures for this new diode laser are discussed. The highlights include single spatial mode devices with up to 160 mW output at 8600 A, and quantum efficiencies of 70 percent (1 W/amp) with demonstrated operating lifetimes of 10,000 h at 50 mW.

Connolly, J. C.↗

NASA NTRS1988

Properties of multiple quantum wells and their use in high-speed detectors and modulators

Quantum well systems lattice matched to GaAs and InP have emerged as important materials for use in long wavelength optoelectronic devices. Intrinsic problems associated with the growth of these quantum wells by molecular beam epitaxy are discussed and the luminescence properties of state-of-art quantum wells, using novel growth techniques are described. Finally, the properties of detectors, modulators and integrated devices made with these heterojunction materials are described and discussed.

Bhattacharya, Pallab↗

NASA NTRS1988

Photorefractive effects in GaAs

Photorefractive GaAs is a potential optical processing material with the capability of integration with optoelectronic and electronic devices. Recent results on photorefractive properties of liquid encapsulated Czochralski (LEC)-grown, undoped, semiinsulating GaAs crystals are presented.

Cheng, L. J.↗

NASA NTRS1989

Phase and amplitude characteristics of InP:Fe modified interdigitated gap photoconductive microwave switches

The transmission amplitude and phase characteristics of InP:Fe modified interdigitated gap photoconductive microwave switches are reported. Measurements in the 0.1-1 GHz frequency range show that the phase is shifted about 90 deg and that the corresponding change in amplitude ranges from 43 dB at 0.1 GHz to 23 dB at 1 GHz when the illumination-induced conductance is switched from a low OFF-state value (aboit 4 x 10 to the -8 S) to a high ON-state value (5 mS). The observed characteristics can be described by a phase-shifting region and an amplitude modulation region. In the phase-shifting region the phase strongly depends on the conductance, and the amplitude is almost constant. In the amplitude modulation region both the amplitude and the phase depend on the conductance but the effect on the amplitude is much more pronounced. A lumped-element model describing the device performance is presented. It is concluded that these optoelectronic microwave switching devices are suitable for high-speed amplitude modulation but are not promising as high-speed phase shifters.

Andersson, Ingmar L.↗

NASA NTRS1990

Matrix.Vector Multiplication In Thin Photorefractive Crystal

Thin GaAs device integrated with other electronic and optoelectronic devices. Experiments show matrix.vector multiplication performed optically by four-wave mixing in thin crystal of GaAs. Concept applicable to thin crystals of other photorefractive materials having suitable electro-optical properties and same crystalline symmetry as that of GaAs.

Cheng, Li-Jen↗

NASA NTRS1990

Active Limiters For Photodetectors

Active or "smart" electro-optical shutters proposed for protection of photodetectors, imaging devices, and other sensitive optical or optoelectronic elements. Responds rapidly and automatically to increase in illumination above prescribed level.

Katz, Joseph↗

NASA NTRS1990

Two-Way Optical Data Link On One Fiber

Optoelectronic terminal for digital communication both transmits and receives over single optical fiber. Uses same semiconductor device - light-emitting diode (LED) - as both transmitting and receiving transducer. Dual-purpose LED's reduce cost.

Kirkham, Harold↗

NASA NTRS1989

Optical backplane interconnect switch for data processors and computers

An optoelectronic integrated device design is reported which can be used to implement an all-optical backplane interconnect switch. The switch is sized to accommodate an array of processors and memories suitable for direct replacement into the basic avionic multiprocessor backplane. The optical backplane interconnect switch is also suitable for direct replacement of the PI bus traffic switch and at the same time, suitable for supporting pipelining of the processor and memory. The 32 bidirectional switchable interconnects are configured with broadcast capability for controls, reconfiguration, and messages. The approach described here can handle a serial interconnection of data processors or a line-to-link interconnection of data processors. An optical fiber demonstration of this approach is presented.

Hendricks, Herbert D.↗

NASA NTRS1990

Coupled effects of conduction in the crystal and thermo-solutal convection in a rectangular inclined enclosure

To date modeling of crystal growth of optoelectronic materials using Physical Vapor Transport has been limited to the study of the fluid phase. To achieve it, the equations of coupled heat, mass and momentum transfer in the gas have to be solved. The first objective of this study is to examine the effect of heat conduction in the crystal on the fluid flow in the neighborhood of the interface. Heat transfer boundary conditions on both interfaces were modified to take into account the additional heat flux between gas and solid. It is proved that heat conduction does not affect the fluid flow. In the presence of gravity, density gradients in the fluid phase generate convection responsible for the problem of a nonplanar growth of the interface. The second objective is to study systematically under one-g the different possible flows in order to solve this problem. Depending on the parameters, a diffusive mode and three convective modes (thermal, solutal and thermo-solutal) are observed. The competition between thermal and solutal convections leads to a mathematical condition which can be used to achieve a planar growth. It is proven that, under the physical conditions chosen, this mathematical condition cannot be thermodynamically satisfied.

Mennetrier, Christophe↗

NASA NTRS1989

Optical pattern recognition; Proceedings of the Meeting, Los Angeles, CA, Jan. 17, 18, 1989

Papers on optical pattern recognition are presented, covering topics such as the estimation of satellite pose and motion parameters using a neural net tracker, associative memory, optical implmentation of programmable neural networks, optoelectronic neural networks, dynamic autoassociative neural memory, heteroassociative memory, bilinear pattern recognition processors, optical processing of optical correlation plane data, and a synthetic discriminant function-based nonlinear optical correlator. Other topics include an interactive optical-digital image processor, geometric transformations for video compression and human teleoperator display, quasiconformal remapping for compensation of human visual field defects, hybrid vision for automated spacecraft landing, advanced symbolic and inference optical correlation filters, and a rotationally invariant holographic tracking system. Additional topics include the detection of rotational and scale-varying objects with a programmable joint transform correlator, a single spatial light modulator binary nonlinear optical correlator, optical joint transform correlation, linear phase coefficient composite filters, and binary phase-only filters.

Liu, Hua-Kuang↗

NASA NTRS1990

Highly efficient pseudomorphic InGaAs/GaAs/AlGaAs single quantum well lasers for monolithic integration

Highly efficient ridge waveguide pseudomorphic single quantum well lasers, emitting at 980 nm, have been fabricated from an In(0.2)Ga(0.8)As/GaAs/AlGaAs graded-index separate confinement heterostructure grown by molecular beam epitaxy. The laterial index guiding provided by the ridge reduces the anomalously large lateral loss of optical power found in gain-guided structures, thereby reducing the internal loss by more than 50 percent. The low threshold current (7.6 mA) and high differential quantum efficiency (79 percent) obtained under continuous operation as well as the transparency of the GaAs substrate to the emitted radiation render these lasers attractive for Ga-As-based optoelectronic integration.

Larsson, A.↗

NASA NTRS1990

Spatial light modulators and applications III; Proceedings of the Meeting, San Diego, CA, Aug. 7, 8, 1989

Recent advances in the technology and applications of spatial light modulators (SLMs) are discussed in review essays by leading experts. Topics addressed include materials for SLMs, SLM devices and device technology, applications to optical data processing, and applications to artificial neural networks. Particular attention is given to nonlinear optical polymers, liquid crystals, magnetooptic SLMs, multiple-quantum-well SLMs, deformable-mirror SLMs, three-dimensional optical memories, applications of photorefractive devices to optical computing, photonic neurocomputers and learning machines, holographic associative memories, SLMs as parallel memories for optoelectronic neural networks, and coherent-optics implementations of neural-network models.

Efron, Uzi↗

NASA NTRS1989

Optical detectors for GaAs MMIC integration - Technology assessment

Claspy, P. C.↗

NASA NTRS1990

Control of a GaAs monolithic Ka-band phase shifter using a high-speed optical interconnect

The use of a high-speed optical interconnect in the control of a Ka-band GaAs monolithic phase shifter is described. A 16-b serial control signal was used to modulate the output of a laser transmitter, and the transmitted optical signal was detected and demultiplexed into 16 parallel electrical outputs using a high-speed hybrid GaAs optoelectronic integrated circuit. Four of the parallel output lines were interfaced to the 4-b phase shifter, and high-speed, optically controlled switching of the phase shifter was observed at clock frequencies to 30 MHz using an interferometric technique.

Bhasin, K. B.↗

NASA NTRS1989

Space optical materials and space qualification of optics; Proceedings of the Meeting, Orlando, FL, Mar. 30, 31, 1989

The present conference on space optical materials discusses current metals and nonmetals-related processing R&D efforts, investigations of space optical effects, and the spaceborne qualification of optical components and systems. Attention is given to CVD SiC for optical applications, optical materials for space-based lasers, the high-efficiency acoustooptic and optoelectronic crystalline material Tl3AsSe3, HIPed Be for low-scatter cryogenic optics, durable solar-reflective surfacing for Be optics, thermal effects on Be mirrors, contamination effects on optical surfaces in the monolayer regime, and IR background signature survey experiment results. Also discussed are the contamination-control program for the EUE instrument, an optical multipass radiation system for the heating of levitated samples, optical sample-position sensing for electrostatic levitation, and the qualification of space lighting systems.

Hale, Robert R.↗