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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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NASA NTRS2010

Nonvolatile Memory Technology for Space Applications

This slide presentation reviews several forms of nonvolatile memory for use in space applications. The intent is to: (1) Determine inherent radiation tolerance and sensitivities, (2) Identify challenges for future radiation hardening efforts, (3) Investigate new failure modes and effects, and technology modeling programs. Testing includes total dose, single event (proton, laser, heavy ion), and proton damage (where appropriate). Test vehicles are expected to be a variety of non-volatile memory devices as available including Flash (NAND and NOR), Charge Trap, Nanocrystal Flash, Magnetic Memory (MRAM), Phase Change--Chalcogenide, (CRAM), Ferroelectric (FRAM), CNT, and Resistive RAM.

Oldham, Timothy R.↗
NASA NTRS2003

Effects Of Environmental And Operational Stresses On RF MEMS Switch Technologies For Space Applications

Micro Electro Mechanical Systems (MEMS) have been heralded for their ability to provide tremendous advantages in electronic systems through increased electrical performance, reduced power consumption, and higher levels of device integration with a reduction of board real estate. RF MEMS switch technology offers advantages such as low insertion loss (0.1- 0.5 dB), wide bandwidth (1 GHz-100 GHz), and compatibility with many different process technologies (quartz, high resistivity Si, GaAs) which can replace the use of traditional electronic switches, such as GaAs FETS and PIN Diodes, in microwave systems for low signal power (x < 500 mW) applications. Although the electrical characteristics of RF MEMS switches far surpass any existing technologies, the unknown reliability, due to the lack of information concerning failure modes and mechanisms inherent to MEMS devices, create an obstacle to insertion of MEMS technology into high reliability applications. All MEMS devices are sensitive to moisture and contaminants, issues easily resolved by hermetic or near-hermetic packaging. Two well-known failure modes of RF MEMS switches are charging in the dielectric layer of capacitive membrane switches and contact interface stiction of metal-metal switches. Determining the integrity of MEMS devices when subjected to the shock, vibration, temperature extremes, and radiation of the space environment is necessary to facilitate integration into space systems. This paper will explore the effects of different environmental stresses, operational life cycling, temperature, mechanical shock, and vibration on the first commercially available RF MEMS switches to identify relevant failure modes and mechanisms inherent to these device and packaging schemes for space applications. This paper will also describe RF MEMS Switch technology under development at NASA GSFC.

Jah, Muzar↗
NASA NTRS2010

Non-Contact Stiffness Measurement of a Suspended Single Walled Carbon Nanotube Device

A new nanoscale electric field sensor was developed for studying triboelectric charging in terrestrial and Martian dust devils. This sensor is capable to measure the large electric fields for large dust devils without saturation. However, to quantify the electric charges and the field strength it is critical to calibrate the mechanical stiffness of the sensor devices. We performed a technical feasibility study of the Nano E-field Sensor stiffness by a non-contact stiffness measurement method. The measurement is based on laser Doppler vibrometer measurement of the thermal noise due to energy flunctuations in the devices. The experiment method provides a novel approach to acquire data that is essential in analyzing the quantitative performance of the E-field Nano Sensor. To carry out the non-contact stiffness measurement, we fabricated a new Single-Walled Carbon Nanotube (SWCNT) E-field sensor with different SWCNTs suspension conditions. The power spectra of the thermal induced displacement in the nano E-field sensor were measured at the accuracy of picometer. The power spectra were then used to derive the mechanical stiffness of the sensors. Effect of suspension conditions on stiffness and sensor sensitivty was discussed. After combined deformation and resistivity measurement, we can compare with our laboratory testing and field testing results. This new non-contact measurement technology can also help to explore to other nano and MEMS devices in the future.

Zheng, Yun↗
NASA NTRS1990

A new thermal sensor for X-ray microcalorimetry

A concept for a detector is introduced which exploits the significant temperature dependence of the dielectric constant in ferroelectric materials. The concept permits the use of a microcalorimeter without the resistive sensors which are associated with heat dissipation and increased Johnson noise in the electronic conversion circuit. General calorimeter features are listed, and the concepts related to dielectric calorimeters are discussed in terms of operational and detection advantages. The use of the device is delineated both theoretically and experimentally with the results of an operational dielectric material. The mixed-crystal quantum ferroelectric is employed and detects 6 MeV alpha particles while operating at 1.2 K in the first detection conducted. The temperature dependence of the dielectric constant in the materials allows for the elimination of resistive sensors in microcalorimeters, thereby improving the ultimate sensitivity of the instrument.

Silver, Eric↗
NASA NTRS1983

Development of a segmented n-type germanium detector, and its application to astronomical gamma-ray spectroscopy

Extensive calculations and simulations have shown that the instrumental background in a coaxial germanium photon detector flown at balloon altitudes or in space, can be substantially reduced by segmenting the outer contact. The contact is divided into horizontal strips around the side of the detector, giving it many characteristics similar to that of a stack of planar detectors. By choosing different segment coincidence requirements in different energy ranges, one can obtain a factor of approx. 2 increase in sensitivity to spectral lines between 40 keV and 1 MeV, compared with an unsegmented detector. The reverse electrode configuration (using n-type germanium), with the p contact outside, is preferred for this application due to its thin dead layer and resistance to radiation damage in space. A small two segment n type detector is being developed to serve as a prototype for larger multisegment devices. Results of this development effort and of detector tests are presented.

Gehrels, N.↗
NASA NTRS1984

The development of a segmented N-type germanium detector, and its application to astronomical gamma-ray spectroscopy

Extensive calculations and simulations have shown that the instrumental background in a coaxial germanium photon detector flown at balloon altitudes or in space, can be substantially reduced by segmenting the outer contact. The contact is divided into horizontal strips around the side of the detector, giving it many characteristics similar to that of a stack of planar detectors. By choosing different segment coincidence requirements in different energy ranges, one can obtain a factor of approx. 2 increase in sensitivity to spectral lines between 40 keV and 1 MeV, compared with an unsegmented detector. The reverse electrode configuration (using n-type germanium), with the p contact outside, is preferred for this application due to its thin dead layer and resistance to radiation damage in space. A small two segment n type detector is being developed to serve as a prototype for larger multisegment devices. Results of this development effort and of detector tests are presented. Previously announced in STAR as N84-13039

Gehrels, N.↗
NASA NTRS1987

Preliminary results on CuInSe2/ZnSe solar cells using reactively sputter-deposited ZnSe

In this paper preliminary results on CuInSe2/ZnSe thin film heterojunction photovoltaic devices are presented. High-conductivity ZnSe films were reactively sutter-deposited onto CuInSe2 films and overcoated with ZnO to reduce the sheet resistance. The highest short-circuit current density, as determined from a spectral response weighted for air mass 1.5 global insolation, was 37.4 mA/sq cm. The highest pen-circuit voltage observed was 430 mV.

Nouhi, A.↗
NASA NTRS1990

Upcoming planetary missions and the applicability of high temperature superconductor bolometers

Planetary missions to Mars and beyond can last 11 years and longer, making impractical the use of stored cryogens. Passive radiative coolers and single-stage mechanical coolers remain possibilities. CRAF and CASSINI, both using the newly developed Mariner Mark 2 spacecraft, will be the next outer planet missions after Galileo; they are intended to provide information on the origin and evolution of the solar system. CRAF is a cometary rendezvous mission slated for a 1994 launch. CASSINI has been chosen by ESA and will be launched by a Titan 4/Centaur in 1996. It will fly by Jupiter in 2000, inject an ESA-supplied probe into Titan in 2002, and take data in Saturn orbit from 2002 to 2006. NASA/Goddard is currently developing a prototype Fourier transform spectrometer (CIRS) that will be proposed for the CASSINI mission. The baseline infrared detectors for CIRS are HgCdTe to 16 microns and Schwarz-type thermopiles from 16 to 1000 microns. The far infrared focal plane could be switched from thermopiles to high temperature superconductor (HTS) bolometers between now and 1996. An HTS bolometer could be built using the kinetic inductance effect, or the sharp resistance change at the transition. The transition-edge bolometer is more straightforward to implement and initial efforts at NASA/Goddard are directed to that device. A working device was made and tested in early 1989. It also has somewhat elevated noise levels below 100 Hz. Upcoming efforts will center on reducing the time constant of the HTS bolometer by attempting to deposit an HTS film on a diamond substrate, and by thinning SrTiO3 substrates. Attempts will be made to improve the film quality to reduce th 1/f noise level, and to improve the thermal isolation to increase the bolometer sensitivity. An attempt is being made to deposit good-quality HTS films on diamond films using an MOCVD technique.

Brasunas, J.↗
NASA NTRS1991

Upcoming planetary missions and the applicability of high temperature superconductor bolometers

Planetary missions to Mars and beyond can last 11 years and longer, making impractical the use of stored cryogens. Passive radiative coolers and single-stage mechanical coolers remain possibilities. Cassini and Comet Rendezvous/Asteroid Fly-by (CRAF), both using the newly developed Mariner Mark 2 spacecraft, will be the next outer planet missions after Galileo; they are intended to provide information on the origin and evolution of the solar system. CRAF is slated for a 1994 launch. Cassini was chosen by ESA and will be launched by a Titan 4/Centaur in 1996. It will fly by Jupiter in 2000, inject an ESA-supplied probe into Titan in 2002, and take data in Saturn's orbit from 2002 to 2006. NASA/Goddard is currently developing a prototype Fourier transform spectrometer, the Composite Infrared Spectrometer (CIRS), for the Cassini mission. The baseline infrared detectors for CIRS are HgCdTe to 16 microns and Schwarz-type thermopiles from 16 to 1000 microns. The far infrared focal plane could be switched from thermopiles to high temperature superconductor (HTS) bolometers between now and 1996. An HTS bolometer could be built using the kinetic inductance effect, or the sharp resistance change at the transition. The transition-edge bolometer is more straightforward to implement, and initial efforts at NASA/Goddard are directed to that device. A working device was made and tested in early 1989. It also has somewhat elevated noise levels below 100 Hz. Upcoming efforts will center on reducing the time constant of the HTS bolometer by attempting to deposit an HTS film on a diamond substrate, and by thinning SrTiO3 substrates. Attempts will be made to improve the film quality to reduce the 1/4 noise level, and to improve the thermal isolation to increase the bolometer sensitivity. An attempt is being made to deposit good-quality HTS films on diamond films using a metal-organic chemical vapor deposition (MOCVD) technique.

Brasunas, J.↗
NASA NTRS1961

Study of a Solar Sensor for use in Space Vehicle Orientation Control Systems

The solar sensor described herein may be used for a variety of space operations requiring solar orientation. The use of silicon solar cells as the sensing elements provides the sensor with sufficient capability to withstand the hazards of a space environment. A method of arranging the cells in a sensor consists simply of mounting them at a large angle to the base. The use of an opaque shield placed between the cells and perpendicular to the base enhances the small-angle sensitivity while adding slightly to the bulk of the sensor. The difference in illumination of these cells as the result of an oblique incidence of the light rays from the reference source causes an electrical error signal which, when used in a battery-bridge circuit, requires a minimum of electrical processing for use in a space-vehicle orientation control system. An error which could occur after prolonged operation of the sensor is that resulting from asymmetrical aging of opposite cells. This could be periodically corrected with a balance potentiometer. A more routine error in the sensor is that produced by reflected earth radiation. This error may be eliminated over a large portion of the operation time by restricting the field of view and, consequently, the capture capability. A more sophisticated method of eliminating this error is to use separate sensors, for capture and fine pointing, along with a switching device. An experimental model has been constructed and tested to yield an output sensitivity of 1.2 millivolts per second of arc with a load resistance of 1,000 ohms and a reference light source of approximately 1,200 foot-candles delivered at the sensor.

Spencer, Paul R.↗
NASA NTRS2007

Skeletal Adaptations to Different Levels of Eccentric Resistance Following Eight Weeks of Training

Coupled concentric-eccentric resistive exercise maintains bone mineral density (BMD) during bed rest and aging. PURPOSE: We hypothesized that 8 wks of lower body resistive exercise training with higher ratios of eccentric to concentric loading would enhance hip and lumbar BMD. METHODS: Forty untrained male volunteers (34.9+/-7.0 yrs, 80.9+/-9.8 kg, 178.2+/-7.1 cm; mean+/-SD) were matched for leg press (LP) 1-Repetition Maximum (1-RM) strength and randomly assigned to one of 5 training groups. Concentric load (% 1-RM) was constant across groups, but each group trained with different levels of eccentric load (0, 33, 66, 100, or 138% of concentric) for all training sessions. Subjects performed a periodized supine LP and heel raise (HR) training program 3 d wk-1 for 8 wks using a modified Agaton Fitness System (Agaton Fitness AB, Boden, Sweden). Hip and lumbar BMD (g/sq cm) was measured in triplicate pre- and post-training using DXA (Hologic Discovery ). Pre- and post-training means were compared using the appropriate ANOVA and Tukey's post hoc tests. Within group pre- to post-training BMD was compared using paired t-tests with a Bonferroni adjustment. RESULTS: There was a main effect of training on L1, L2, L3, L4, total lumbar, and greater trochanter BMD, but there were no differences between groups. CONCLUSION: Eights wks of lower body resistive exercise increased greater trochanter and lumbar BMD. Inability to detect group differences may have been influenced by a potentially osteogenic vibration associated with device operation in the 0, 33, and 66% groups.

English, Kirk L.↗
NASA NTRS1992

SiC device development for high temperature sensor applications

Progress made in the processing and characterization of 3C-SiC for high temperature sensor applications is reviewed. Piezoresistance properties of silicon carbide and the temperature coefficient of resistivity of n-type beta-SiC are presented. In addition, photoelectrical etching and dopant selective etch-stops in SiC and high temperature Ohmic contacts for n-type beta-SiC sensors are discussed.

Shor, J. S.↗
NASA NTRS1999

Evaporative Cooling Membrane Device

An evaporative cooling membrane device is disclosed having a flat or pleated plate housing with an enclosed bottom and an exposed top that is covered with at least one sheet of hydrophobic porous material having a thin thickness so as to serve as a membrane. The hydrophobic porous material has pores with predetermined dimensions so as to resist any fluid in its liquid state from passing therethrough but to allow passage of the fluid in its vapor state, thereby, causing the evaporation of the fluid and the cooling of the remaining fluid. The fluid has a predetermined flow rate. The evaporative cooling membrane device has a channel which is sized in cooperation with the predetermined flow rate of the fluid so as to produce laminar flow therein. The evaporative cooling membrane device provides for the convenient control of the evaporation rates of the circulating fluid by adjusting the flow rates of the laminar flowing fluid.

Lomax, Curtis↗
NASA NTRS1972

Micro-scale crease-and-fold apparatus

Crease and fold resistance of polymeric films and test equipment for determining mechanical properties is discussed. Components of equipment and method of operation are described. Illustration of test device is provided.

Muraca, R. F.↗
NASA NTRS1977

A methodology for experimentally based determination of gap shrinkage and effective lifetimes in the emitter and base of p-n junction solar cells and other p-n junction devices

An experimentally based methodology that determines the effective gap shrinkage and lifetime in the emitter of a p-n junction solar cell is described which provides an experimental means for assessing the importance of gap shrinkage relative to that of large recombination rates in the highly doped emitter. The base lifetime is also determined. The methodology pertains to a solar cell after the junction is formed, so that each material parameter determined includes the effects of the processing used in junction fabrication. The methodology consists of strategy and procedures for designing experiments and interpreting data consistently with the physical mechanisms governing device behavior. This careful linking to the device physics uncover the material parameters concealed in the data. To illustrate the procedures, they are applied to an n(+)-p solar cell having substrate resistivity of about 0.1 ohm-cm.

Lindholm, F. A.↗
NASA NTRS1979

Semiconductor technology program. Progress briefs

The current status of NBS work on measurement technology for semiconductor materials, process control, and devices is reported. Results of both in-house and contract research are covered. Highlighted activities include modeling of diffusion processes, analysis of model spreading resistance data, and studies of resonance ionization spectroscopy, resistivity-dopant density relationships in p-type silicon, deep level measurements, photoresist sensitometry, random fault measurements, power MOSFET thermal characteristics, power transistor switching characteristics, and gross leak testing. New and selected on-going projects are described. Compilations of recent publications and publications in press are included.

Bullis, W. M.↗
NASA NTRS1984

Integrated Tactile Sensor for Robots

Proposed large-scale integrated (LSI) circuit gives robots, partshandling machines, and remote-control devices sense of touch. LSI circuits, placed on contact surfaces of manipulators combine functions of transduction, computing and communicating. Beneath layer of pressure sensitive rubber, resistivity of which changes with pressure, electrodes furnish pressuredependent signal to computation elements. Electrodes and computation elements contained in silicon integrated-circuit wafer.

Raibert, M. H.↗