Search NASA⌕ Search

SEARCH · Search NASA

Results for “Capacitance”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 649 records · Page 36
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Ferroelectric AlBN films by molecular beam epitaxy

We report the properties of molecular beam epitaxy deposited AlBN thin films on a recently developed epitaxial nitride metal electrode, Nb2N. While a control AlN thin film exhibits standard capacitive behavior, distinct ferroelectric switching is observed in the AlBN films with increasing Boron mole fraction. The measured remnant polarization Pr∼15μC/cm2 and coercive field Ec∼ 1.45 MV/cm in these films are smaller than those recently reported on films deposited by sputtering, due to incomplete wake-up, limited by current leakage. Because AlBN preserves the ultrawide energy bandgap of AlN compared to other nitride hi-K dielectrics and ferroelectrics, and it can be epitaxially integrated with GaN and AlN semiconductors, its development will enable several opportunities for unique electronic, photonic, and memory devices.

Physics↗
DOE OSTI2024

Managing photon flux in a miniaturized photoionization detector

Miniaturized photoionization detectors (PIDs) are used in conjunction with gas chromatography systems to detect volatile compounds in gases by collecting the current from the photoionized gas analytes. PIDs should be inexpensive and compatible with a wide range of analyte species. One such PID is based on the formation of a He plasma in a dielectric barrier discharge (DBD), which generates vacuum UV (VUV) photons from excited states of He to photoionize gas analytes. There are several design parameters that can be leveraged to increase the ionizing photon flux to gas analytes to increase the sensitivity of the PID. To that end, the methods to maximize the photon flux from a pulsed He plasma in a DBD-PID were investigated using a two-dimensional plasma hydrodynamics model. The ionizing photon flux originated from the resonance states of helium, He(3P) and He(2 1 P), and from the dimer excimer He 2 *. While the photon flux from the resonant states was modulated over the voltage pulse, the photon flux from He 2 * persisted long after the voltage pulse passed. Several geometrical optimizations were investigated, such as using an array of pointed electrodes. However, increasing the capacitance of the dielectric enclosing the plasma chamber had the largest effect on increasing the VUV photon fluence to gas analytes.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Tunnel junction-enabled monolithically integrated GaN micro-light emitting transistor

GaN/InGaN microLEDs are a very promising technology for next-generation displays. Switching control transistors and their integration are key components in achieving high-performance, efficient displays. Monolithic integration of microLEDs with GaN switching devices provides an opportunity to control microLED output power with capacitive (voltage)-controlled rather than current-controlled schemes. This approach can greatly reduce system complexity for the driver circuit arrays while maintaining device opto-electronic performance. In this work, we demonstrate a 3-terminal GaN micro-light emitting transistor that combines a GaN/InGaN blue tunneling-based microLED with a GaN n-channel FET. Further, the integrated device exhibits excellent gate control, drain current control, and optical emission control. This work provides a promising pathway for future monolithic integration of GaN FETs with microLED to enable fast switching, high-efficiency microLED display and communication systems.

42 ENGINEERING↗
DOE OSTI2025

Fast and efficient Sb-based type-II phototransistors integrated on silicon

Increasing the energy efficiency and reducing the footprint of on-chip photodetectors enable dense optical interconnects for emerging computational and sensing applications. While heterojunction phototransistors (HPTs) exhibit high energy efficiency and negligible excess noise factor, their gain-bandwidth product (GBP) has been inferior to that of avalanche photodiodes at low optical powers. Here, we demonstrate that utilizing type-II energy band alignment in an Sb-based HPT results in six times smaller junction capacitance per unit area and a significantly higher GBP at low optical powers. These type-II HPTs were scaled down to 2 μm in diameter and fully integrated with photonic waveguides on silicon. Thanks to their extremely low dark current and high internal gain, these devices exhibit a GBP similar to the best avalanche devices (∼270 GHz) but with one order of magnitude better energy efficiency. Their energy consumption is about 5 fJ/bit at 3.2 Gbps, with an error rate below 10−9 at −25 dBm optical power at 1550 nm. These features suggest new opportunities for creating highly efficient and compact optical receivers based on phototransistors with type-II band alignment.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

Laser-stimulated photodetachment of electrons from the negatively charged dielectric substrates

The photon-stimulated emission of bulk electrons has been extensively studied for various types of materials, while the photodetachment of surplus surface electrons has not been fully explored. The photodetachment barrier energy is commonly defined by the surface electron affinity of material, which is typically less than the work function and more pronounced for non-conducting substrates and in environments with a continuous flux of electrons to the surface, such as in gas discharge plasmas. Herein, it is experimentally shown that the photodetachment yield of surplus electrons created by plasma-induced charging of non-conductive surfaces of dielectric materials depends on the initial surface charge density and do not correlate with the tabulated affinity values of these materials under gas discharge charging conditions. In cocnclusion, this result obtained using laser-stimulated photodetachment for fused silica, boron nitride, and alumina, is critically important for the understanding of charging and discharging dynamics, secondary electron emission, and photo emission effects affecting plasma–wall interactions relevant to surface and capacitively coupled discharges, dusty plasmas, electrostatic probe diagnostics, and applications for plasma processing of materials, plasma propulsion, and gas breakdown.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Ferro-ionic states and domains morphology in Hf x Zr 1–x O 2 nanoparticles

Unique polar properties of nanoscale hafnia-zirconia oxides (Hf x Zr 1–x O 2 ) are of great interest for condensed matter physics, nanophysics, and advanced applications. These properties are connected (at least partially) to the ionic–electronic and electrochemical phenomena at the surface, interfaces, and/or internal grain boundaries. Here, we calculated the phase diagrams, dielectric permittivity, spontaneous polar, and antipolar ordering, as well as the domain structure morphology in Hf x Zr 1–x O 2 nanoparticles covered by ionic–electronic charge originating from surface electrochemical adsorption. We revealed that the ferro-ionic coupling supports the polar long-range order in nanoscale Hf x Zr 1–x O 2 , induces, and/or enlarges the stability region of the labyrinthine domains toward smaller sizes and smaller environmental dielectric constant at low concentrations of the surface ions. The ferro-ionic coupling causes the transition to the single-domain ferro-ionic state at high concentrations of the surface ions. We predict that the labyrinthine domain states, being multiple-degenerated, may significantly affect the emergence of the negative differential capacitance state in the nanograined/nanocrystalline Hf x Zr 1–x O 2 films.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Implementation of scalable suspended superinductors

Superinductors have become a crucial component in the superconducting circuit toolbox, playing a key role in the development of more robust qubits. Enhancing the performance of these devices can be achieved by suspending the superinductors from the substrate, thereby reducing stray capacitance. Here, we present a fabrication framework for constructing superconducting circuits with suspended superinductors in planar architectures. To validate the effectiveness of this process, we systematically characterize both resonators and qubits with suspended arrays of Josephson junctions, ultimately confirming the high quality of the superinductive elements. In addition, this process is broadly compatible with other types of superinductors and circuit designs. Furthermore, our results not only pave the way for scalable superconducting architectures utilizing superinductors but also provide the primitive for future investigation of loss mechanisms associated with the device substrate.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Measurement of electrical characteristics of Ge-based diodes with thermal GeO2 films exposed to controlled humidity conditions

We investigated the impact of the interaction between gas-phase water molecules and thermally oxidized GeO2 on Ge on the performance of metal–oxide–semiconductor (MOS) structures. A vacuum-integrated setup was developed to form MOS diodes with a GeO2/Ge structure that had been exposed to controlled humidity conditions and to subsequently measure their electrical characteristics in situ. The capacitance–voltage (C–V) curves exhibited a significant negative shift, indicating the generation of positive charges at the GeO2/Ge interface when the GeO2 surface was exposed to humidity levels above approximately 1%. According to a previous study using electron spectroscopy, this threshold corresponds to the humidity level at which molecular water begins to grow on a GeO2/Ge structure. It is likely that gas-phase water molecules infiltrating the GeO2 film bind to local OH sites via hydrogen bonding, leading to the formation of positive fixed charges at the GeO2/Ge interface.

Sano, Shuto↗
DOE OSTI2025

A scanning resonator for probing quantum coherent devices

Superconducting resonators with high quality factors are extremely sensitive detectors of the complex impedance of materials and devices coupled to them. This capability has been used to measure losses in multiple different materials and, in the case of circuit quantum electrodynamics (circuit QED), has been used to measure the coherent evolution of multiple different types of qubits. Here, we report on the implementation of a scanning resonator for probing quantum coherent devices. Our scanning setup enables tunable coherent coupling to systems of interest without the need for fabricating on-chip superconducting resonators. We measure the internal quality factor of our resonator sensor in the single-photon regime to be >104 and demonstrate capacitive imaging using our sensor with zeptoFarad sensitivity and micron spatial resolution at milliKelvin temperatures. We then use our setup to characterize the energy spectrum and coherence times of multiple transmon qubits with no on-chip readout circuitry. Our experiments introduce a new tool for using circuit QED to measure existing and proposed qubit platforms.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Structure, dynamics, and electrochemistry of choline chloride/ethylene glycol eutectic solvents at an electrode surface explored by molecular dynamics simulations

Choline chloride and ethylene glycol mixtures with 1:2, 1:4, and 1:6 molar ratios on the surfaces of graphite and gold electrodes were studied using classical molecular dynamics simulations. Both neutral and charged electrodes were considered. The liquid composition, solvation structure, molecular orientation, and dynamics at the electrode surface are significantly different from those of the bulk liquid. These properties strongly depend on the electrode material and charge density, whereas they are less sensitive to the overall solvent composition. The effect of the electrode on the composition, structure, and orientation of the liquid fades beyond ∼10 Å from the surface of the electrode. This distance corresponds to about two layers of the structured solvent, despite the fact that the layered structure extends to at least five layers or about 25 Å. However, the electrode influences solvent dynamics over a longer distance. The electrochemical properties of the eutectic solvent at both electrode surfaces were also studied. The simulations captured the experimental differential capacitance shapes for both electrode systems, although the magnitudes and exact shapes differ. The simulations further revealed that the solvent in the first solvation layer can both overscreen and underscreen the electrode charges depending on the electrode material and electrode potential.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Accelerating kinetic plasma simulations with machine-learning-generated initial conditions

Computational models of plasma technologies often solve for the system operating conditions by time-stepping an initial value problem to a quasi-steady solution. However, the strongly nonlinear and multi-timescale nature of plasma dynamics often necessitate millions, or even hundreds of millions, of steps to reach convergence, reducing the effectiveness of these simulations for computer-aided engineering. We consider acceleration of kinetic plasma simulations via data-driven machine-learning-generated initial conditions, which initialize the simulations close to their final quasi-steady-state, thereby reducing the number of steps to reach convergence. Three machine-learning models are developed to predict the density and ion kinetic profiles of capacitively coupled plasma discharges relevant to the microelectronics industry. The models are trained on kinetic simulations over a range of device operating frequencies and pressures. Best performance was observed when simulations were initialized with ion kinetic profiles generated by a convolutional neural network, reducing the mean number of steps to reach convergence by 17.1× when compared to initialization with a zero-dimensional global model. We also outline a workflow for continuous data-driven model improvement and simulation speedup, with the aim of generating sufficient data for full device digital twins.

Artificial neural networks↗
DOE OSTI2026

Deriving effective electrode–ion interactions from free-energy profiles at electrochemical interfaces

Understanding ion adsorption at electrified metal–electrolyte interfaces is essential for accurate modeling of electrochemical systems. Here, in this study, we systematically investigate the free energy profiles of Na + , Cl − , and F − ions at the Au(111)–water interface using enhanced sampling molecular dynamics with both classical force fields and machine-learned interatomic potentials (MLIPs). Our classical metadynamics results reveal a strong dependence of predicted ion adsorption on the Lennard-Jones parameters, highlighting that—without due care—standard mixing rules can lead to qualitatively incorrect descriptions of ion–metal interactions. We present a systematic methodology for tuning the cross term LJ parameters to control adsorption energetics in agreement with more accurate models. As a surrogate for an ab initio model, we employed the recently released Universal Models for Atoms MLIP, which validates classical trends and displays strong specific adsorption for chloride, weak adsorption for fluoride, and no specific adsorption for sodium, in agreement with experimental and theoretical expectations. By integrating molecular-level adsorption free energies into continuum models of the electric double layer, we show that specific ion adsorption substantially alters the interfacial ion population, the potential of zero charge, and the differential capacitance of the system. Our results underscore the critical importance of force field parameterization and advanced interatomic potentials for the predictive modeling of ion-specific effects at electrified interfaces and provide a robust framework for bridging molecular simulations and continuum electrochemical models.

Roncoroni, Fabrice [Lawrence Berkeley National Lab↗
DOE OSTI2026

Parametrically amplified Josephson plasma waves in YBa 2 Cu 3 O 6+ x : Evidence for local superconducting fluctuations up to the pseudogap temperature T ∗

Experiments that subject underdoped YBa 2 Cu 3 O 6+x (YBCO) to intense terahertz pulses at temperatures between the transition temperature T c and the pseudogap scale T ∗ have revealed a reflectivity edge that resembles that of the superconducting state, together with second harmonic generation of a probe pulse modulated at a similar frequency. These have been interpreted in terms of parametric amplification of the lower Josephson plasmon mode. Since this mode is often associated with coherent oscillations between bilayers in the YBCO structure, these experiments have led to the suggestion that the intense pump has created (or revealed) in-plane pair coherence up to T ∗ ≈ 400 K. In this paper we propose an alternative explanation by assuming the existence of local pair amplitude and phase at equilibrium for T c < T < T ∗ . The phase correlation spans only a few lattice constants and we do not assume any pump-induced enhancement of this correlation, either in-plane or between bilayers. Instead, the coherent drive, via a parametric amplification process, induces coherence in the Josephson currents between members of bilayers. When combined with a Floquet framework, the reflectivity data can be explained. The key point is that in the lower Josephson plasmon, the coupling between bilayers is mainly capacitive; the Josephson current between bilayers can be set to zero without strongly affecting the parametric amplification process. Importantly, while superconducting coherence may not be created by the pump, the pseudogap phase must possess a local pairing amplitude at equilibrium. Consequently, these experiments have strong implications for the understanding of the pseudogap phase.

parametric amplification↗
DOE OSTI2025

Wide-Bandgap Semiconductor Amplifiers for Fusion Plasma Heating and Control

This paper discusses power electronics developed under the ARPA-E GAMOW program to support nuclear fusion power production. The goal of this project was to develop and assess the potential for wide-bandgap (WBG) semiconductor devices in power electronics to enable high-efficiency and high-voltage solid-state systems for fusion plasma generation, heating, and control. The power electronics use an architecture in which multiple high-power boards can be combined to produce megawatt-level power, where using multiple boards provides high reliability. Two main areas of power electronics boards are developed in this project for fusion plasma heating and control applications: (1) pulse generation and control and (2) radiofrequency generation. The first area is for boards capable of driving high-voltage millisecond pulses at high duty cycles. The envisioned application of these pulses is in plasma control of magnetohydrodynamic instabilities, plasma position, and edge-localized modes. Pulse-width modulation allows for the implementation of a wide variety of linear and nonlinear control systems. The boards developed for this project could actuate control coils based on digital input signals and can be parallelized to provide megawatts of output power. The design of the pulse generator is a low-side load switch. A load switch was designed and constructed that utilized 2-kV-rated field-effect transistor (FET)-based cascodes developed by Qorvo under this project to perform initial testing of these cascodes. The second area is being implemented using class E amplifiers with WBG devices and a reactance steering network to handle inductive or capacitive plasma loads. Applications include ion cyclotron resonance heating (ICRH) and high-harmonic fast-wave (HHFW) heating. A class E reactance steering network is demonstrated in modeling and experiment with a resistive-inductive load that models an inductively-coupled plasma. Power combining of boards with class E reactance steering networks is also simulated and demonstrated experimentally, to enable scaling up to high power. Modeling of high-power-density cooling and remaining useful life is conducted to enable reliable, effectively cooled high-power electronics for fusion applications.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2026

Decomposition of methane diluted with inert gas in an RF discharge cell

Decomposition of methane using non-thermal plasmas is an attractive route for producing hydrogen-rich gases and valuable carbon nanomaterials. Understanding how plasma discharge modes influence methane decomposition in optimizing plasma-assisted chemical conversion remains unexplored. This study explores the coupling between the discharge structure and product selectivity in RF capacitively coupled discharges operating in methane/inert gas mixtures in the pressure range of 2–3 torr. Under our experimental conditions the discharge exhibits mode transitions from uniform to striated in Ar and Kr and from diffuse to contracted in Ar and Kr with <5% CH 4 . The discharges in He and Ne remained uniform under our operating conditions, and their mixtures with CH 4 remained diffuse. A 0-d model for Ar/CH 4 discharge established a threshold for contraction while also asserting the importance of Ar$^{*}_{\textrm{m}}$ in the dissociation and ionization processes. The highest degree of methane decomposition, >99.7% with the main products of acetylene and graphitized solid carbon was achieved in the contracted discharge mode for both Kr or Ar with ⩽5% CH 4 . We demonstrate that contraction can play a crucial role in the effective decomposition of methane with value-added products and that both the electronic and thermal properties of plasma gas are responsible for this effect.

RF plasma↗
DOE OSTI2026

Studies of laser stimulated photodetachment from nanoparticles for particle charge measurements

Determining nanoparticle charge is more challenging than that for microparticles due to change in the particle size during the synthesis substantial plasma property variations, and difficulties in visualizing individual particles, rendering conventional microparticle charge diagnostics ineffective in dusty plasma. In this work, we utilized laser-stimulated photodetachment (LSPD) to deduce the mean charge of nanoparticles. Nanoparticles were grown in an Ar/C 2 H 2 mixture using a capacitively coupled RF discharge and the LSPD induced changes in the electron current monitored by a cylindrical Langmuir probe. LSPD signals were obtained and analyzed across different dust growth phases. The prolonged decay of electron current pulses was attributed to the presence of residual negative ions, caused by the effective electrostatic trapping of these ions and the potential post—LSPD re-formation of new ones. The particle charge was estimated by combining the laser-stimulated photodetachment signal from the probe with the dust density obtained from laser-light extinction using the measured nanoparticle size distribution. For a nanoparticles size range of approximately 100–250 nm and mean diameter of $d$ p ∼154.37 nm, the effective mean charge was estimated to be $\langle$$Q$$\rangle$ d $≈$ 37 elementary charge units. The measured charge values are lower than those predicted by orbital motion limited theory, which may be attributed to significant electron depletion in the nanodusty plasma. LSPD results in Ar/C 2 H 2 nano-dusty plasma confirm the applicability of this method for estimating individual nanoparticle charges. However, it has also been demonstrated that electron detachment from residual background negative ions can influence the detachment current decay and must be carefully considered.

dust particle charge↗
DOE OSTI2024

A method to observe field-region oxide charge and inter-electrode isolation from CV-characteristics of n-on-p devices

Abstract N-on-psilicon sensors will be utilized in the Compact Muon Solenoid (CMS) detector's tracker and High Granularity Calorimeter (HGCAL) in the High Luminosity upgrade of the Large Hadron Collider (HL-LHC). Among their several advantages in terms of radiation hardness over the traditionalp-on-nsensors in the extreme radiation environment of the HL-LHC are electron collection instead of holes and overlapping maxima of weighting and electric fields at the charge-collecting electrodes. The disadvantage of the multi-channel SiO 2 -passivatedn-on-psensors is the generation of an inversion layer under the Si/SiO 2 -interface by a positive interface-oxide-charge (N ox ) that at high densities can compromise the position resolution by creating a conduction channel between the electrodes. This issue is typically addressed by including additional isolnts (p-stp,p-spray) between n + -electrodes. Focusing on the guard-ring regions ofn-on-psensors where no isolation implants are applied between the electrodes, a capacitance-voltage (CV) characterization study of both 6-inch wafer test diodes and 8-inch HGCAL prototype and pre-series sensors showed a distinct threshold voltage (V th,iso ) in theCV-characteristics of a biased n + -electrode when its enclosing guard-ring was left floating. When reproduced by simulations, the measuredV th,iso was found to contain information on the field-regionN ox and indicate the threshold where the two electrodes become electrically isolated by the influence of the reverse bias voltage. Together with previous studies on the inter-electrode isolation of irradiatedn-on-psensors, the results indicate that position sensitiven-on-psensors without isolation implants may be feasible in future HEP experiments.

Instruments & Instrumentation↗
DOE OSTI2024

Characterizing novel Indium Phosphide pad detectors with focused X-ray beams and laboratory tests

Future tracking systems in High Energy Physics experiments will require large instrumented areas with low radiation length. Crystalline silicon sensors have been used in tracking systems for decades, but are difficult to manufacture and costly to produce for large areas. We are exploring alternative sensor materials that are amenable to fast fabrication techniques used for thin film devices. Indium Phosphide pad sensors were fabricated at Argonne National Lab using commercially available InP:Fe 2-inch mono-crystal substrates. Current-voltage and capacitance-voltage characterizations were performed to study the basic operating characteristics of a group of sensors. Micro-focused X-ray beams at Canadian Light Source and Diamond Light Source were used to study the response to ionizing radiation, and characterize the uniformity of the response for several devices. Electrical test results showed a high degree of performance uniformity between the 48 tested devices. X-ray test beam results showed good performance uniformity within tested devices after accounting for spatially-local defects and edge fields. As a result, this motivates further studies into thin film devices for future tracking detectors.

47 OTHER INSTRUMENTATION↗