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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 703 records · Page 39
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

The fabrication of nanoscale Bi 2 Te 3 /Sb 2 Te 3 multilayer thin film-based thermoelectric power chips

In this work, we report our method of fabricating nanoscale multilayered Bi 2 Te 3 /Sb 2 Te 3 thin film-based integrated thermoelectric devices, and detail the voltage and power produced by the device. The multilayered Bi 2 Te 3 /Sb 2 Te 3 thin film was grown via e-beam evaporation; it had 20 alternating Bi 2 Te 3 - and Sb 2 Te 3 -layers, each layer being 1.5 nm thick. We characterized the film using high-resolution transmission electron microscopy (HRTEM), revealing its excellent cross-sectional structure without any obvious interface defects. The Bi 2 Te 3 /Sb 2 Te 3 multilayer films were investigated by synchrotron x-ray scattering. An integrated device including 128×256 thermoelectric elements was fabricated from the multilayered film. An open-circuit voltage of 51 mV and a maximum power of 21 nW were produced from this 30 nm-thick Bi 2 Te 3 /Sb 2 Te 3 multilayer TE device. We found that the nanoscale multilayer structure significantly affects the voltage and power produced. Lastly, the fabrication of the integrated thermoelectric devices is compatible to that of generating standard integrated circuits (ICs), and is scalable for producing higher voltage and power, or achieving solid-state cooling for on-chip applications.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Selected Area Manipulation of MoS 2 via Focused Electron Beam-Induced Etching for Nanoscale Device Editing

Here we demonstrate direct-write patterning of single and multilayer MoS 2 via a focused electron beam-induced etching (FEBIE) process mediated with the XeF 2 precursor. MoS 2 etching is performed at various currents, areal doses, on different substrates, and characterized using scanning electron and atomic force microscopies as well as Raman and photoluminescence spectroscopies. Scanning transmission electron microscopy reveals a sub-40 nm etching resolution and the progression of point defects and lateral etching of the consequent unsaturated bonds. The results confirm that the electron beam-induced etching process is minimally invasive to the underlying material in comparison to ion beam techniques, which damage the subsurface material. Single-layer MoS 2 field-effect transistors are fabricated, and device characteristics are compared for channels that are edited via the selected area etching process. The source–drain current at constant gate and source–drain voltage scale linearly with the edited channel width. Moreover, the mobility of the narrowest channel width decreases, suggesting that backscattered and secondary electrons collaterally affect the periphery of the removed area. Focused electron beam doses on single-layer transistors below the etching threshold were also explored as a means to modify/thin the channel layer. The FEBIE exposures showed demonstrative effects via the transistor transfer characteristics, photoluminescence spectroscopy, and Raman spectroscopy. While strategies to minimize backscattered and secondary electron interactions outside of the scanned regions require further investigation, here, we show that FEBIE is a viable approach for selective nanoscale editing of MoS 2 devices.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Ultrafast laser induced electronic and structural modifications in bulk fused silica

Ultrashort laser pulses can modify the inner structure of fused silica, generating refractive index changes varying from soft positive (type I) light guiding forms to negative (type II) values with void presence and anisotropic sub-wavelength modulation. We investigate electronic and structural material changes in the type I to type II transition via coherent and incoherent secondary light emission reflecting free carrier behavior and post-irradiation material relaxation in the index change patterns. Using phase contrast microscopy, photoluminescence, and Raman spectroscopy, we determine in a space-resolved manner defect formation, redistribution and spatial segregation, and glass network reorganization paths in conditions marking the changeover between type I and type II photoinscription regimes. We first show characteristic patterns of second harmonic generation in type I and type II traces, indicating the collective involvement of free carriers and polarization memory. Second, incoherent photoemission from resonantly and non-resonantly excited defect states reveals accumulation of non-bridging oxygen hole centers (NBOHCs) in positive index domains and oxygen deficiency centers (ODCs) with O{sub 2}{sup −} ions segregation in void-like regions and in the nanostructured domains, reflecting the interaction strength. Complementary Raman investigations put into evidence signatures of the different environments where photo-chemical densification (bond rearrangements) and mechanical effects can be indicated. NBOHCs setting in before visible index changes serve as precursors for subsequent compaction build-up, indicating a scenario of cold, defect-assisted densification for the soft type I irradiation regime. Additionally, we observe hydrodynamic effects and severe bond-breaking in type II zones with indications of phase transition. These observations illuminate densification paths in fused silica in low power irradiation regimes, and equally in energetic ranges, characterized by the onset of thermo-mechanical effects.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Effects of structural defects on optical properties of In x Ga 1-x N layers and quantum wells

This review concentrates on the microstructure of In x Ga 1-x N layers and quantum wells (QWs) in relation to their optical properties. The microstructure of In x Ga 1-x N, with a constant In(x) concentration, shifts with layer thickness. Only layers below 100 nm for x = 0.1 are nearly defect-free. A photoluminescence peak is observed at 405 nm, in line with ~10% In, suggesting band-edge luminescence. Layers with greater thickness and In content present a corrugated surface with numerous structural defects, including V-defects, causing redshifts and multi-peaks in photoluminescence up to 490 nm. These defects, resembling those in GaN, lead to a corrugated sample surface. Atomic force microscopy shows a 3.7-fold larger corrugation in samples with 20 QWs compared to those with 5 QWs measured on 2 × 2 μm 2 areas. Like in GaN, dual growth on different crystallographic planes results in varied QW thicknesses, influencing optical traits of devices made from In x Ga 1-x N layers. The purpose of this review and the chosen subject is to highlight the significant contribution of Wladek Walukiewicz and his group to the current research on the properties of In x Ga 1-x N, which are crucial alloys in the field of optoelectronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Analysis of thermal grooving effects on vortex penetration in vapor-diffused Nb 3 Sn

While Nb 3 Sn theoretically offers better superconducting radio-frequency (RF) cavity performance (Q 0 and E acc ) to Nb at any given temperature, peak RF magnetic fields consistently fall short of the ~400 mT prediction. The relatively rough topography of vapor-diffused Nb 3 Sn is widely conjectured to be one of the factors that limit the attainable performance of Nb 3 Sn-coated Nb cavities prepared via Sn vapor diffusion. Here we investigate the effect of coating duration on the topography of vapor-diffused Nb 3 Sn on Nb and calculate the associated magnetic field enhancement and superheating field suppression factors using atomic force microscopy topographies. It is shown that the thermally grooved grain boundaries are major defects which may contribute to a substantial decrease in the achievable accelerating field. Further, the severity of these grooves increases with total coating duration due to the deepening of thermal grooves during the coating process.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

2D Polyhedral Template Matching for Atomic Resolution Microscopy

SAND2024-13879O The 2D Polyhedral Template Matching for Atomic Resolution Microscopy is a suite of functions for analyzing atomic resolution electron microscopy images using the 2D polyhedral template matching (2D-PTM) method. This software analyzes atomic resolution microscopy data from electron microscopic imaging or scanning probe microscopies. The primary application is for identifying different crystal phases, crystal orientations, and defect structures obtained in such atomic resolution images. Written in MATLAB and starting from an atomic resolution image, the code identifies the positions of atomic intensity peaks. It then matches predefined structural templates to the local atomic environments. Outputs include the local structural identification, the template scaling factor and rotation angle, root-mean-squared deviation (RMSD), and centrosymmetry parameter.

Medlin, Douglas↗
DOE OSTI2019

Time Domain Thermoreflectance and Photodeflection Signatures of He Bubbles in Metals

The mechanical properties of the steel and weldments for different components are affected by the formation of helium bubbles as a result of tritium decay. Therefore, periodic analyses of metals exposed to tritium gas are conducted to determine structural defects and temporal damage from tritium gas decay and He precipitation. Transmission electron microscopy (TEM) and autoradiography are the current analytical methods for the evaluation of metal damage. These methods are functional after several years of damage to the crystal lattice where 3 He bubble formation damage can be seen with TEM. New analytical methods that can assess the damage to the crystal lattice early during the exposure to tritium are highly sought to ascertain the effects of material processing and tritium interactions. Further, simple sample preparation, compared to TEM, at a significantly reduced cost is highly desirable. A pump-probe laser technique using a femtosecond laser has been demonstrated to measure the thermal diffusivity of different materials. The time domain thermoreflectance laser setup can provide thermal diffusivity and phonon lifetime, which can be correlated with lattice damage. This advanced nonlinear optical technique will enable measurements of nanostructure damage in the metal before and after tritium exposure within a year. This report discusses current efforts in the design and development of the technique and the application to material characterization.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Time Domain Thermoreflectance and Photodeflection Signatures of He Bubbles in Metals

The mechanical properties of the steel and weldments for different components are affected by the formation of helium bubbles as a result of tritium decay. Therefore, periodic analyses of metals exposed to tritium gas are conducted to determine structural defects and temporal damage from tritium gas decay and He precipitation. Transmission electron microscopy (TEM) and autoradiography are the current analytical methods for the evaluation of metal damage. These methods are functional after several years of damage to the crystal lattice where 3He bubble formation damage can be seen with TEM. New analytical methods that can assess the damage to the crystal lattice early during the exposure to tritium are highly sought to ascertain the effects of material processing and tritium interactions. Further, simple sample preparation, compared to TEM, at a significantly reduced cost is highly desirable. A pump-probe laser technique using a femtosecond laser has been demonstrated to measure the thermal diffusivity of different materials. The time domain thermoreflectance (TDTR) laser setup can provide thermal diffusivity and phonon lifetime, which can be correlated with lattice damage. This advanced nonlinear optical technique will enable measurements of nanostructure damage in the metal before and after tritium exposure within a year. This report discusses current efforts in the design and development of the technique and the application to material characterization.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
NASA NTRS1984

Study of factors determining the radiation sensitivity of quartz crystal oscillators (A0189)

The correlation between defect cluster concentrations observed for different grades of quartz examined by transmission electron microscopy (TEM) and the electrical stability of quartz resonators exposed to complex radiation in an orbital LDEF was determined. It is demonstrated that the technique TEM provides a powerful method for studying the effect of radiation on crystalline quartz. Two factors suggest that the observed clusters may be responsible for the radiation-induced frequency drift and acoustic absorption effects associated with irradiated quartz resonators: (1) the clusters are expected to be very effective in modifying the piezoelectric properties of quartz because of the large strain fields associated with them; (2) both phenomena appear to be sensitive to the impurity concentration. It is suggested that TEM can be used to classify grades of quartz according to their suitability for use in radiation-hard resonators. This technique may identify the impurities that are responsible and thereby effect an improvement in the stability of quartz oscillators.

Venables, J. D.↗
NASA NTRS1985

Thermal and sputtered aluminum oxide coatings for high temperature electrical insulation

Aluminum oxide coatings have been investigated as electrically insulating layers for mounting thin film Pt-Pt/Rh thermocouples on gas turbine blade and vane alloys (MAR M200 + Hf and MAR M509). Thermal oxides were grown directly onto NiCoCrAlY and FeCrAlY coatings on these alloys at temperature between 1300 and 1400 K in oxygen partial pressures 10 to the -7th to 2 x 10 to the 4th Pa. Although these thermal oxides exhibited good adherence, analytical characterizations using electron and optical microscopy, as well as X-ray photoelectron spectroscopy showed that they had defects and impurities which limited their insulating ability. The insulating quality of the coating was greatly improved however by reactively sputtering an aluminum oxide film over the thermal oxide. Results are presented on the electrical performance of the 2-5 micron thick composite layers for temperatures up to 1300 K.

Kreider, K. G.↗
NASA NTRS2024

Offset-Stoichiometric Reflowable Composite Bonding Method with Adhesive for Mitigating Strict Faying Surface Tolerances

Inherent susceptibility of adhesive bonds to miniscule quantities of contamination can cause undetectable weakened bonds. For this reason, the Federal Aviation Administration (FAA) places strict regulations on adhesively bonded joints in primary aircraft structures. To meet certification requirements aircraft manufactures resort to redundant load paths in the form of fasteners which inherently add weight to the structure and increase manufacturing time. In prior work, a secondary bonding technique called AERoBOND was developed, which utilized off-stoichiometric epoxymatrix resins to facilitate reflow and diffusion of the resin within the joint interface during a secondary bonding/cure process, thus achieving a bond similar to a co-cured joint. However, the AERoBOND process required tight spatial tolerances between the two parts being joined. This study examined the utilization of conventional adhesive with the AERoBOND method to act as a filler in the joint line, effectively reducing the need for tight tolerances on the joining parts and serving as a flexible alternative for existing manufacturing processes. Ultrasonic inspection, optical microscopy, and ASTM International standard tests were performed to analyze the joints for defects and to quantify the mode-I and mode-II interlaminar fracture toughness and short beam strength of the proposed methodology with varying manufacturing parameters. The comprehensive results indicate that the AERoBOND+ method with and without surface preparation performs comparably to co-cured and conventional, adhesively bonded joints when secondary cured in an autoclave with 791 kPa of pressure. As an example, the AERoBOND+ panel without surface preparation bonded with 791 kPa of pressure (referred to as AB+3 throughout paper) had a mode-I fracture toughness (G Ic ) of 0.643 kJ/m 2 and a mode-II fracture toughness (G IIc ) of 4.000 kJ/m 2 in the non-precracked condition and 4.218 kJ/m 2 in the precracked condition at the adhesive-to-prepreg interface. These results were 96%, 142%, and 217%, respectively, of a co-cured baseline panel (referred to as C1 throughout paper).

Composites↗
DOE OSTI2024

Pure edge-dislocation half-loops in low-temperature Ga⁢N for V-defect formation

Lateral injection of carriers through semipolar crystallographic planes into c-plane QWs is one of the new frontiers in III-N light-emitting diodes (LEDs), especially for long wavelengths. Strategic use of V-defects has proven to be the most promising method for lateral injection, and creating optimal V-defect structure and density is an important research area for reducing forward voltage and increasing wall plug efficiency. Here, in this article, we present a novel method for forming V-defects in nominally unstressed low-temperature Ga⁢N through the generation of pure edge-dislocation half-loops. We present a detailed material science analysis of the loops via scattering-contrast electron microscopy. The loops have pure-edge character with Burgers vector 1/3 ⁢⟨$11\bar{2}0$⟩, and form in a sessile orientation on {$11\bar{2}0$} a-planes. The two arms of the loops are inclined such that the extra half-planes face down toward the growth substrate. The dislocation loops can be used to intentionally form V-defects through conditions of kinetically limited growth: these conditions also favor nucleation of V-defects at ∼100% of other threading dislocations in the Ga⁢N templates. Patterned sapphire substrates (PSS) are one of the most important substrates for III-N LED growth because of their superior light extraction. However, due to its low threading dislocation density, PSS have not been used extensively for V-defect LEDs. This work provides a pathway for improved control of V-defect formation and density on LEDs grown on sapphire with the goal of enabling uniform lateral injection in these V-defect engineered LEDs with low forward voltage, including PSS for high light extraction.

LEDs↗
DOE OSTI2023

Extensively Microtwinned Diamond with Nanolaminates of Lonsdaleite Formed by Flash Laser Heating of Glassy Carbon

Diamond’s unique properties on the nanoscale make it one of the most important materials for use in biosensors and quantum computing and for components that can withstand the harsh environments of space. We synthesize oriented, faceted diamond particles by flash laser heating of glassy carbon at 16 GPa and 2300 K. Detailed transmission electron microscopy shows them to consist of a mosaic of diamond nanocrystals frequently joined at twin boundaries forming microtwins. Striking 3-fold translational periodicity was observed in both imaging and diffraction. This periodicity was shown to originate from nanodimensional wedge-shaped overlapping regions of twinned diamond and not from a possible 9R polytype, which has also been reported in other group IVa elements and water ice. Extended bilayers of hexagonal layer stacking were observed, forming lonsdaleite nanolaminates. In conclusion, the particles exhibited optical fluorescence with a rapid quench time (<1 ns) attributed to their unique twinned microstructure.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Thermal effect on magnetic parameters of high-coercivity cobalt ferrite

We prepared very high-coercivity cobalt ferrite nanoparticles synthesized by a combustion method and using short-time high-energy mechanical milling to increase strain and the structural defects density. The coercivity (H{sub C}) of the milled sample reached 3.75 kOe—a value almost five times higher than that obtained for the non-milled material (0.76 kOe). To investigate the effect of the temperature on the magnetic behavior of the milled sample, we performed a thermal treatment on the milled sample at 300, 400, and 600 °C for 30 and 180 min. We analyzed the changes in the magnetic behavior of the nanoparticles due to the thermal treatment using the hysteresis curves, Williamson-Hall analysis, and transmission electron microscopy. The thermal treatment at 600 °C causes decreases in the microstructural strain and density of structural defects resulting in a significant decrease in H{sub C}. Furthermore, this thermal treatment increases the size of the nanoparticles and, as a consequence, there is a substantial increase in the saturation magnetization (M{sub S}). The H{sub C} of the samples treated at 600 °C for 30 and 180 min were 2.24 and 1.93 kOe, respectively, and the M{sub S} of these same samples increased from 57 emu/g to 66 and 70 emu/g, respectively. The H{sub C} and the M{sub S} are less affected by the thermal treatment at 300 and 400 °C.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Focused Interest Groups Propel Innovation in the Emerging Data-Driven Hardware Ecosystem

Over the past several decades, the science of electron microscopy (EM) has risen to become one of the cornerstone approaches to understanding material structure, chemistry, and defects at exceptional spatial resolution. This rise can be attributed to the hard work of researchers and companies who have pushed the bounds of instrumentation and analysis, but it is also the result of advocacy by members of professional societies. Furthermore, such advocacy is exemplified by the Aberration Corrected EM (ACEM) focused interest group (FIG) of the Microscopy Society of America (MSA), which has played an important role in facilitating new hardware developments, promoting the exchange of ideas to catalyze discovery, and building the next generation of leaders in electron microscopy. From the early 2000s to the present, aberration correction has moved from proof-of-concept instrumentation to an established technique, providing unprecedented improvements in spatial and chemical resolution for breakthroughs in chemistry, physics, and materials science.

47 OTHER INSTRUMENTATION↗
DOE OSTI2018

Formation of tetragonal gas bubble superlattice in bulk molybdenum under helium ion implantation

In this paper, we report the formation of tetragonal gas bubble superlattice in bulk molybdenum under helium ion implantation at 573 K. The transmission electron microscopy study shows that the helium bubble lattice constant measured from the in-plane d-spacing is ~4.5 nm, while it is ~3.9 nm from the out-of-plane measurement. The results of synchrotron-based small-angle x-ray scattering agree well with the transmission electron microscopy results in terms of the measurement of bubble lattice constant and bubble size. The coupling of transmission electron microscopy and synchrotron high-energy X-ray scattering provides an effective approach to study defect superlattices in irradiated materials.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Self-Healing Thermal Annealing: Surface Morphological Restructuring Control of GaN Nanorods

With advances in nanolithography and dry etching, top-down methods of nanostructuring have become a widely used tool for improving the efficiency of optoelectronics. These nano dimensions can offer various benefits to the device performance in terms of light extraction and efficiency, but often at the expense of emission color quality. Broadening of the target emission peak and unwanted yellow luminescence are characteristic defect-related effects due to the ion beam etching damage, particularly for III–N based materials. In this article we focus on GaN based nanorods, showing that through thermal annealing the surface roughness and deformities of the crystal structure can be “self-healed”. Correlative electron microscopy and atomic force microscopy show the change from spherical nanorods to faceted hexagonal structures, revealing the temperature-dependent surface morphology faceting evolution. The faceted nanorods were shown to be strain- and defect-free by cathodoluminescence hyperspectral imaging, micro-Raman, and transmission electron microscopy (TEM). In-situ TEM thermal annealing experiments allowed for real time observation of dislocation movements and surface restructuring observed in ex-situ annealing TEM sampling. This thermal annealing investigation gives new insight into the redistribution path of GaN material and dislocation movement post growth, allowing for improved understanding and in turn advances in optoelectronic device processing of compound semiconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Observation of Defect-Assisted Magnetic Vortex Core Reversal at Ultralow Critical Velocity

The stability of structures with nontrivial topology is a subject of great interest, both from fundamental and technological perspectives. The topology of a magnetic vortex, for example, results in high stability of the vortex core polarity, which is attractive for applications. This high stability, however, greatly impedes the required deterministic polarity switching, which is typically only achieved with large magnetic fields or strong dynamic driving. Here, we show that the interaction between the vortex core and manufactured nanoscale defects in the magnetic material lowers the required driving strength for core polarity reversal by more than an order of magnitude. We excite vortex dynamics in thin permalloy disks, and map the twodimensional (2D) vortex core trajectory using 3D time-resolved Kerr microscopy. In pristine samples, we observe normal gyrotropic motion of the vortex core. After laser-induced generation of defects, however, we observe repeated vortex core reversal at much-reduced driving strength. Micromagnetic simulations reveal how local reduction of exchange coupling and saturation magnetization can create vortex core reversal sites for deterministic vortex core switching.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗