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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS2002

Power System for Venus Surface Exploration

A radioisotope power and cooling system is designed to provide electrical power for a probe operating on the surface of Venus. Most foreseeable electronics devices and sensors cannot operate at the 450 C ambient surface temperature of Venus. Because the mission duration is substantially long and the use of thermal mass to maintain an operable temperature range is likely impractical, some type of active refrigeration may be required to keep electronic components at a temperature below ambient. The fundamental cooling parameters are the cold sink temperature, the hot sink temperature, and the amount of heat to be removed. In this instance, it is anticipated that electronics would have a nominal operating temperature of 300 C. Due to the highly thermal convective nature of the high-density (90 bar CO2) atmosphere, the hot sink temperature was assumed to be 50 C, which provided a 500 C temperature of the cooler's heat rejecter to the ambient atmosphere. The majority of the heat load on the cooler is from the high temperature ambient surface environment on Venus, with a small contribution of heat generation from electronics and sensors. Both thermoelectric (RTG) and dynamic power conversion systems were analyzed, based on use of a standard isotope (General-purpose heat source, or GPHS) brick. For the radioisotope Stirling power converter configuration designed, the Sage model predicts a thermodynamic power output capacity of 478.1 watts, which slightly exceeds the required 469.1 watts. The hot sink temperature is 1200 C, and the cold sink temperature is 500 C. The required heat input is 1740 watts. This gives a thermodynamic efficiency of 27.48 %. It is estimated that the mechanical efficiency of the power converter design is on the order of 85 %, based on experimental measurements taken from 500-watt power class, laboratory-tested Stirling engines. The overall efficiency is calculated to be 23.36 %. The mass of the power converter is estimated at approximately 21.6 kg. Additional information is included in the original extended abstract.

Landis, Geoffrey A.↗
NASA NTRS2004

Venus Surface Power and Cooling System Design

A radioisotope power and cooling system is designed to provide electrical power for the a probe operating on the surface of Venus. Most foreseeable electronics devices and sensors simply cannot operate at the 450 C ambient surface temperature of Venus. Because the mission duration is substantially long and the use of thermal mass to maintain an operable temperature range is likely impractical, some type of active refrigeration may be required to keep certain components at a temperature below ambient. The fundamental cooling requirements are comprised of the cold sink temperature, the hot sink temperature, and the amount of heat to be removed. In this instance, it is anticipated that electronics would have a nominal operating temperature of 300 C. Due to the highly thermal convective nature of the high-density atmosphere, the hot sink temperature was assumed to be 50 C, which provided a 500 C temperature of the cooler's heat rejecter to the ambient atmosphere. The majority of the heat load on the cooler is from the high temperature ambient surface environment on Venus. Assuming 5 cm radial thickness of ceramic blanket insulation, the ambient heat load was estimated at approximately 77 watts. With an estimated quantity of 10 watts of heat generation from electronics and sensors, and to accommodate some level of uncertainty, the total heat load requirement was rounded up to an even 100 watts. For the radioisotope Stirling power converter configuration designed, the Sage model predicts a thermodynamic power output capacity of 478.1 watts, which slightly exceeds the required 469.1 watts. The hot sink temperature is 1200 C, and the cold sink temperature is 500 C. The required heat input is 1740 watts. This gives a thermodynamic efficiency of 27.48 %. The maximum theoretically obtainable efficiency is 47.52 %. It is estimated that the mechanical efficiency of the power converter design is on the order of 85 %, based on experimental measurements taken from 500 watt power class, laboratory-tested Stirling engines at GRC. The overall efficiency is calculated to be 23.36 %. The mass of the power converter is estimated at approximately 21.6 kg.

Landis, Geoffrey A.↗
NASA NTRS2003

High-Temperature RF Probe Station For Device Characterization Through 500 deg C and 50 GHz

A high-temperature measurement system capable of performing on-wafer microwave testing of semiconductor devices has been developed. This high temperature probe station can characterize active and passive devices and circuits at temperatures ranging from room temperature to above 500 C. The heating system uses a ceramic heater mounted on an insulating block of NASA shuttle tile material. The temperature is adjusted by a graphical computer interface and is controlled by the software-based feedback loop. The system is used with a Hewlett-Packard 8510C Network Analyzer to measure scattering parameters over a frequency range of 1 to 50 GHz. The microwave probes, cables, and inspection microscope are all shielded to protect from heat damage. The high temperature probe station has been successfully used to characterize gold transmission lines on silicon carbide at temperatures up to 540 C.

Schwartz, Zachary D.↗
NASA NTRSDate not supplied

Pt/HTCC Alumina based Electronic Packaging System and Integration Processes for High Temperature Harsh Environment Applications

Electronic devices capable of operation at 500°C are required for long term Venus surface missions, as well as for in situ monitoring and control of next generation aeronautical engines. High temperature sensors and electronics can also find many applications in military, and energy and automobile industries. Various silicon carbide (SiC) sensors and electronic devices have been developed for operation at 500 °C, and a compatible packaging system is needed for long term test and deployment of these high temperature devices. High temperature co-fired ceramics (HTCC) alumina with platinum (Pt) conductor was proposed for high temperature electronic packaging. A prototype Pt/HTCC alumina packaging system including chip-level package and circuit board has been briefly reported previously for long-term electrical testing of SiC integrated circuits at 500 °C, and brief testing at much higher temperatures. HTCC alumina is an excellent dielectric material with acceptable dielectric constant and low dielectric loss over wide temperature and frequency ranges. Pt is chemically noble and can be co-fired with HTCC alumina in air ambient producing a viable electronic packaging material system for high temperature applications. This paper presents a more detailed description of this packaging system including prototype low power packages and circuit boards based on HTCC alumina and Pt metallization for 500°C and other harsh environment applications. The key technical considerations for chip-level packaging and circuit board assembly, including materials and processes for 500 °C durable wire-bonding and SiC die attach, and integration of multi-chip circuit boards, are presented. Experimental test results of this packaging approach applied to SiC integrated circuits at 500 °C and 700°C are discussed as well.

High temperature↗
NASA NTRSDate not supplied

Pt/HTCC Alumina based Electronic Packaging System and Integration Processes for High Temperature Harsh Environment Applications

Electronic devices capable of operation at 500°C are required for long term Venus surface missions, as well as for in situ monitoring and control of next generation aeronautical engines. High temperature sensors and electronics can also find many applications in military, and energy and automobile industries. Various silicon carbide (SiC) sensors and electronic devices have been developed for operation at 500 °C, and a compatible packaging system is needed for long term test and deployment of these high temperature devices. High temperature co-fired ceramics (HTCC) alumina with platinum (Pt) conductor was proposed for high temperature electronic packaging. A prototype Pt/HTCC alumina packaging system including chip-level package and circuit board has been briefly reported previously for long-term electrical testing of SiC integrated circuits at 500 °C, and brief testing at much higher temperatures. HTCC alumina is an excellent dielectric material with acceptable dielectric constant and low dielectric loss over wide temperature and frequency ranges. Pt is chemically noble and can be co-fired with HTCC alumina in air ambient producing a viable electronic packaging material system for high temperature applications. This paper presents a more detailed description of this packaging system including prototype low power packages and circuit boards based on HTCC alumina and Pt metallization for 500°C and other harsh environment applications. The key technical considerations for chip-level packaging and circuit board assembly, including materials and processes for 500 °C durable wire-bonding and SiC die attach, and integration of multi-chip circuit boards, are presented. Experimental test results of this packaging approach applied to SiC integrated circuits at 500 °C and 700°C are discussed as well.

electronic packaging↗
NASA NTRS1973

Volatile element chemistry of selected lunar, meteoritic, and terrestrial samples

Using vacuum pyrolysis and high resolution mass spectrometry, a study is made of the gas release patterns of representative lunar samples, meteorites, terrestrial samples, and synthetic samples doped with various sources of carbon and nitrogen. The pyrolytic gas evolution patterns were intercorrelated, allowing an assessment of the possible sources of the volatilizable material in the lunar samples to be made. Lightly surface adsorbed species and more strongly chemisorbed species are released from ambient to 300 C and from 300 to 500 C, respectively. The low-temperature volatiles (less than 500 C) derived from various chondrites correlate well with the gas evolution patterns of volatile-rich samples, as for example 74220 and 61221. Solar wind entrapped species and molecules derived from reactions probably in the grain surfaces are evolved from about 500 to 700 C, respectively. Solar wind implanted C, N, and S species are generated from 750 to 1150 C, probably by reaction with the mineral matrix during the annealing process. Possible indigenous and/or refractory carbide, nitride, and sulfide C, N, and S are released in the region from 1200 C to fusion.

Simoneit, B. R.↗
NASA NTRS2003

Packaging Technology Designed, Fabricated, and Assembled for High-Temperature SiC Microsystems

A series of ceramic substrates and thick-film metalization-based prototype microsystem packages designed for silicon carbide (SiC) high-temperature microsystems have been developed for operation in 500 C harsh environments. These prototype packages were designed, fabricated, and assembled at the NASA Glenn Research Center. Both the electrical interconnection system and the die-attach scheme for this packaging system have been tested extensively at high temperatures. Printed circuit boards used to interconnect these chip-level packages and passive components also are being fabricated and tested. NASA space and aeronautical missions need harsh-environment, especially high-temperature, operable microsystems for probing the inner solar planets and for in situ monitoring and control of next-generation aeronautical engines. Various SiC high-temperature-operable microelectromechanical system (MEMS) sensors, actuators, and electronics have been demonstrated at temperatures as high as 600 C, but most of these devices were demonstrated only in the laboratory environment partially because systematic packaging technology for supporting these devices at temperatures of 500 C and beyond was not available. Thus, the development of a systematic high-temperature packaging technology is essential for both in situ testing and the commercialization of high-temperature SiC MEMS. Researchers at Glenn developed new prototype packages for high-temperature microsystems using ceramic substrates (aluminum nitride and 96- and 90-wt% aluminum oxides) and gold (Au) thick-film metalization. Packaging components, which include a thick-film metalization-based wirebond interconnection system and a low-electrical-resistance SiC die-attachment scheme, have been tested at temperatures up to 500 C. The interconnection system composed of Au thick-film printed wire and 1-mil Au wire bond was tested in 500 C oxidizing air with and without 50-mA direct current for over 5000 hr. The Au thick-film metalization-based wirebond electrical interconnection system was also tested in an extremely dynamic thermal environment to assess thermal reliability. The I-V curve1 of a SiC high-temperature diode was measured in oxidizing air at 500 C for 1000 hr to electrically test the Au thick-film material-based die-attach assembly.

Chen, Liang-Yu↗
NASA NTRS1979

CO2 laser annealing of 50-microns-thick silicon solar cells

A test program is conducted to determine thin solar cell annealing effects using a laser energy source. A CO2 continuous-wave laser was used in annealing experiments on 50 micrometers-thick silicon solar cells after proton irradiation. Test cells were irradiated to a fluence of 1.0 x 10 to the 12th power protons/sq cm with 1.9 MeV protons. After irradiation, those cells receiving full proton dosage were degraded by an average of 30% in output power. In annealing tests laser beam exposure times on the solar cell varied from 2 seconds to 16 seconds reaching cell temperatures of from 400 C to 500 C. Under those conditions annealing test results showed recovery in cell output power of from 33% to 90%.

Walker, F. E.↗
NASA NTRS1978

Interface reaction and characterization in B/Al composites

Interfacial reactions, strength degradation, and fracture morphology have been characterized in B/Al(1100) and B/Al(6061) composite systems at a volume fraction of 0.55. Reaction was promoted by isothermal exposure at 350 C or 500 C for times up to 860,000 s. Tetragonal AlB12 was identified as the reaction product in the 6061 matrix and hexagonal AlB2 in the 1100 matrix. Interface development is analyzed based on a moving boundary model modified by the addition of ternary elements. While strength decreases in both systems, the time dependence of elevated-temperature exposure is different in the two matrix materials. In the 45 deg fiber orientation, failure occurs primarily by matrix shear, whereas in the 90 deg fiber orientation, fracture morphology is characterized by a mixture of fiber splitting, ductile matrix fracture, and failure at fiber-matrix interfaces.

Kim, W. H.↗
NASA NTRS1981

Defect chemistry and characterization of (Hg, Cd)Te

Single crystal samples of phosphorus doped Hg sub 0.8 Cd sub 0.2 Te were anneald at temperatures varying from 450 C to 600 C in various Hg atmospheres. The samples were quenched to room temperature from the annealing temperatures. Hall effect and mobility measurements were performed at 77 K on all these samples. The results indicate the crystals to be p type for a total phosphorus concentration of 10 to the 19th power/cu cm in all the samples. The hole concentration at 77 K increases with increasing Hg pressures at 450 C and 500 C contrary to the observation in undoped crystals. Also, at low Hg pressures the concentration of holes in the phosphorus doped crystals is lower than in the undoped crystals. The hole concentration in all the samples is lower than the intrinsic carrier concentration at the annealing temperatures. The hole mobility in the doped crystals is similar to that in the undoped crystals. A defect model according to which phosphorus behaves as a single acceptor interstitially, occupying Te lattice sites while it acts as a single donor occupying Hg lattice sites was established. Equilibrum constants established for the incorporation of all the phosphorus species explain the experimental results

Vydyanath, H. R.↗
NASA NTRS1982

Coal desulfurization by aqueous chlorination

A method of desulfurizing coal is described in which chlorine gas is bubbled through an aqueous slurry of coal at low temperature below 130 degrees C., and at ambient pressure. Chlorinolysis converts both inorganic and organic sulfur components of coal into water soluble compounds which enter the aqueous suspending media. The media is separated after chlorinolysis and the coal dechlorinated at a temperature of from 300 C to 500 C to form a non-caking, low-sulfur coal product.

Kalvinskas, J. J.↗
NASA NTRS1987

In-situ thermal cycling in SEM of a graphite-aluminum composite

In situ SEM observations of a graphite-aluminum composite (unidirectional P100 graphite-fiber-reinforced 6061 aluminum MMC plates) were used to measure displacements within the graphite fiber relative to the interface between the graphite fiber and the aluminum matrix during thermal cycling. Specimens were thermally cycled from room temperature to 300 C or 500 C in a SEM chamber and then cooled to room temperature. The obtained shear strains within the fiber were then related to anomalous values of measured residual stresses and to the impact on the composite coefficient of expansion and potential damage under thermal fatigue loading. The shear mechanism was proposed as a source of temperature limits on the low coefficient of expansion of these composites, as well as a potential source of thermal fatigue degradation.

Cheong, Y. M.↗
NASA NTRS1992

Method for producing edge geometry superconducting tunnel junctions utilizing an NbN/MgO/NbN thin film structure

A method for fabricating an edge geometry superconducting tunnel junction device is discussed. The device is comprised of two niobium nitride superconducting electrodes and a magnesium oxide tunnel barrier sandwiched between the two electrodes. The NbN electrodes are preferably sputter-deposited, with the first NbN electrode deposited on an insulating substrate maintained at about 250 C to 500 C for improved quality of the electrode.

Hunt, Brian D.↗
NASA NTRS1992

Edge geometry superconducting tunnel junctions utilizing an NbN/MgO/NbN thin film structure

An edge defined geometry is used to produce very small area tunnel junctions in a structure with niobium nitride superconducting electrodes and a magnesium oxide tunnel barrier. The incorporation of an MgO tunnel barrier with two NbN electrodes results in improved current-voltage characteristics, and may lead to better junction noise characteristics. The NbN electrodes are preferably sputter-deposited, with the first NbN electrode deposited on an insulating substrate maintained at about 250 C to 500 C for improved quality of the electrode.

Hunt, Brian D.↗
NASA NTRS1993

Development of radiometer windows for atmospheric entry vehicles

A test program was established to determine the feasibility of developing a radiometer window for stagnation region shock layer atmospheric entry experiments from geosynchronous orbit and with measurements extending into the VUV region to about 170 nm. This test program examined both isolated (uncooled) and cooled window mounting options. Preliminary tests determined the gross suitability of sapphire and fused silica as window materials. Measurements show that the expected maximum temperature (1500 C) is itself not a problem, but that temperature gradients can easily break a window and that the transmission of sapphire and of fused silica at 174 nm drops dramatically at temperatures beyond 800 C and 500 C, respectively. A series of developmental tests showed that the surface of an uncooled fused silica window begins to melt at the entry conditions tested while an uncooled sapphire window generally does not, and that a cooled sapphire window design that keeps the window below 800 C appears possible. The final proof-of-design tests narrowed the selection of possible candidate window sizes and mounting configurations. These tests demonstrate that the best insulated and cooled window designs use small diameter sapphire windows and that thermal modeling codes can be used to assist the design process.

Terrazas-Salinas, Imelda↗
NASA NTRS2001

Safe Affordable Fission Engine (SAFE 30) Module Conductivity Test Thermal Model Correlation

Two SAFE 30 modules were tested to determinate the thermal conductivity efficiency of the tri-cusps filled between the heat pipe and the heater cores. The modules consisted of four one-inch diameter tubes with heaters joined to an empty 1 inch diam. tube. The test was conducted on a vacuum chamber with 4 configurations: tri-cusps filled with and without radiation shielding and non-filled tri-cusps with and without radiation shielding. The tri-cusps material helps the bonding of the heat pipe to the four electric heater cores, filling the gap between the pipes. The baseline configuration is a brazed joint between the pipe. The test consisted of controlling the power applied to the heaters until a set surface temperature is reach. The temperatures varied between a max. of 800 C to 500 C. Test data, input energy and chamber surface temperature from each individual test, was used as boundary conditions for the model. Nodes located on the same location as the test thermocouples were plotted again test data to determinate the accuracy of the analysis. The unknown n variables on the analysis are the radiation emissivity of the pipe and chamber and the radiation view factor between the module and the chamber. A correlation was determined using a parametric analysis varying the surface emissivity and view factor until a good match was reach.

Roman, Jose↗
NASA NTRS2018

A High Frequency (HF) Inductive Power Transfer Circuit for High Temperature Applications Using SiC Schottky Diodes

Wireless sensors placed in high temperature environments, such as aircraft engines, are desirable to reduce the mass and complexity of routing wires. While communication with the sensors is straight forward, providing power wirelessly is still a challenge. This paper introduces an inductive wireless power transfer circuit incorporating SiC Schottky diodes and its operation from room temperature (25 C) to 500 C.

Diode↗
NASA NTRS2001

Packaging Technology Developed for High-Temperature Silicon Carbide Microsystems

High-temperature electronics and sensors are necessary for harsh-environment space and aeronautical applications, such as sensors and electronics for space missions to the inner solar system, sensors for in situ combustion and emission monitoring, and electronics for combustion control for aeronautical and automotive engines. However, these devices cannot be used until they can be packaged in appropriate forms for specific applications. Suitable packaging technology for operation temperatures up to 500 C and beyond is not commercially available. Thus, the development of a systematic high-temperature packaging technology for SiC-based microsystems is essential for both in situ testing and commercializing high-temperature SiC sensors and electronics. In response to these needs, researchers at Glenn innovatively designed, fabricated, and assembled a new prototype electronic package for high-temperature electronic microsystems using ceramic substrates (aluminum nitride and aluminum oxide) and gold (Au) thick-film metallization. Packaging components include a ceramic packaging frame, thick-film metallization-based interconnection system, and a low electrical resistance SiC die-attachment scheme. Both the materials and fabrication process of the basic packaging components have been tested with an in-house-fabricated SiC semiconductor test chip in an oxidizing environment at temperatures from room temperature to 500 C for more than 1000 hr. These test results set lifetime records for both high-temperature electronic packaging and high-temperature electronic device testing. As required, the thick-film-based interconnection system demonstrated low (2.5 times of the room-temperature resistance of the Au conductor) and stable (decreased 3 percent in 1500 hr of continuous testing) electrical resistance at 500 C in an oxidizing environment. Also as required, the electrical isolation impedance between printed wires that were not electrically joined by a wire bond remained high (greater than 0.4 GW) at 500 C in air. The attached SiC diode demonstrated low (less than 3.8 W/mm2) and relatively consistent dynamic resistance from room temperature to 500 C. These results indicate that the prototype package and the compatible die-attach scheme meet the initial design standards for high-temperature, low-power, and long-term operation. This technology will be further developed and evaluated, especially with more mechanical tests of each packaging element for operation at higher temperatures and longer lifetimes.

Chen, Liang-Yu↗