Search NASA⌕ Search

SEARCH · Search NASA

Results for “CMOS technology”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

RD53A: A large-scale prototype chip for the phase II upgrade in the serially powered HL-LHC pixel detectors

The phase II upgrade of the HL-LHC experiments within the LHC intends to deepen the studies of the Higgs boson and to allow the discovery of further particles by adding an integrated luminosity of about 4000 fb -1 over 10 years of operation. This upgrade would overwhelm the installed pixel detector readout chips with higher hit rates and radiation levels than ever before. To match these extreme requirements the RD53 collaboration, a joint effort between ATLAS and CMS, developed RD53A, a new generation pixel detector readout chip prototype manufactured in a 65 nm CMOS technology. It is half the size of the final pixel chips and designed to meet requirements in the face of 3 GHz/cm 2 hit rate after irradiation to 500 Mrad. The detector is able to use 50×50 μm 2 or 25×100 μm 2 pixels with high readout speed of up to 4 links per chip with 1.28 Gbit/s each. Shunt–LDO regulators integrated on the bottom of the chip provide the required voltages to the two power domains, analog and digital. These regulators enable serial powering of the pixel modules, which is the only feasible, radiation hard scheme to ensure acceptable power cable losses and to stay within the material budget for the future pixel detectors. Finally, an overview of the status and challenges of serial powering and the Shunt–LDO regulator development will be given.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2026

Evaluation of 3D pixel silicon sensors for the CMS Phase-2 Inner Tracker

The high-luminosity upgrade of the CERN LHC requires the replacement of the CMS tracking detector to cope with the increased radiation fluence while maintaining its excellent performance. An extensive R&D program, aiming at using 3D pixel silicon sensors in the innermost barrel layer of the detector, has been carried out by CMS in collaboration with the FBK (Trento, Italy) and CNM (Barcelona, Spain) foundries. The sensors will feature a pixel cell size of 25 × 100 µm 2 , with a centrally located electrode connected to the readout chip. The sensors are read out by the RD53A and CROCv1 chips, developed in 65 nm CMOS technology by the RD53 Collaboration, a joint effort between the ATLAS and CMS groups. This paper reports the results achieved in beam test experiments before and after irradiation, up to a fluence of approximately 2 . 6 × 1 0 16 n eq /cm 2 . Measurements of assemblies irradiated to a fluence of 1 × 10 16 n˙eq/cm 2 show a hit detection efficiency higher than 96% at normal incidence, with fewer than 2% of channels masked, across a bias voltage range greater than 50 V . Even after irradiation to a higher fluence of 1.6 × 10 16 n˙eq/cm 2 , similar performance is maintained over a bias voltage range of 30 V , remaining well within CMS requirements.

3D pixel↗
DOE OSTI2020

Revealing Antiferroelectric Switching and Ferroelectric Wakeup in Hafnia by Advanced Piezoresponse Force Microscopy

Hafnium oxide (HfO 2 )-based ferroelectrics offer remarkable promise for memory and logic devices in view of their compatibility with traditional silicon complementary metal oxide semiconductor (CMOS) technology, high switchable polarization, good endurance, and thickness scalability. These factors have led to a steep rise in the level of research on HfO 2 over the past number of years. While measurements on capacitors are promising for understanding macroscopic effects, many open questions regarding the emergence of ferroelectricity and electric field cycling behaviors remain. Continued progress requires information regarding the nanoscale ferroelectric behaviors on the bare surface (i.e., without encapsulation), which is notably absent. To overcome this barrier, we have applied complementary modes of piezoresponse force microscopy with the goal of directly and quantitatively sensing nanoscale ferroelectric behaviors in bare HfO 2 thin films. Our results on 8 nm Si-doped HfO 2 reveal nanoscale domains of local remnant polarization states exhibiting a weak piezoelectric coupling (deff) in the range 0.6–1.5 pm/V. While we observed localized enhancement of deff during progressive stressing of the bare HfO 2 thin film, we did not detect stable polarization switching which is a prerequisite of ferroelectric switching. We find that this result could be explained using polarization switching spectroscopy which revealed antiferroelectric-like switching in the form of pinched hysteresis loops as well as increasing remnant response with repeated cycling. As such, our results offer a promising route for material scientists who want to explore the nanoscale origins of antiferroelectricity and ferroelectric wakeup in HfO 2 .

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Engineering new limits to magnetostriction through metastability in iron-gallium alloys

Magnetostrictive materials transduce magnetic and mechanical energies and when combined with piezoelectric elements, evoke magnetoelectric transduction for high-sensitivity magnetic field sensors and energy-efficient beyond-CMOS technologies. The dearth of ductile, rare-earth-free materials with high magnetostrictive coefficients motivates the discovery of superior materials. Fe 1- x Ga x alloys are amongst the highest performing rare-earth-free magnetostrictive materials; however, magnetostriction becomes sharply suppressed beyond x = 19% due to the formation of a parasitic ordered intermetallic phase. Here, we harness epitaxy to extend the stability of the BCC Fe 1- x Ga x alloy to gallium compositions as high as x = 30% and in so doing dramatically boost the magnetostriction by as much as 10x relative to the bulk and 2x larger than canonical rare-earth based magnetostrictors. A Fe 1- x Ga x - [Pb(Mg 1/3 Nb 2/3 )O 3 ] 0.7 -[PbTiO 3 ] 0.3 (PMN-PT) composite magnetoelectric shows robust 90° electrical switching of magnetic anisotropy and a converse magnetoelectric coefficient of 2.0 × 10 -5 s m -1 . When optimally scaled, this high coefficient implies stable switching at ~80 aJ per bit.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Overview of the front-end electronics of CMS HGCal - including readout and powering

The end-cap calorimeters of CMS will be upgraded to a single High Granularity Calorimeter (HG-Cal) for the HL-LHC, including both silicon sensors and scintillator tiles with on-tile SiPMs as active elements. The readout of the active elements is performed by an ASIC (HGCROC in 130 nm CMOS technology) that measures the amplitude and arrival time of the signals. The amplitude is measured over a large dynamic range to allow calibration with single particles and the measurement of TeV showers. The time of arrival of high-energy showers will be measured with a precision of around 30 ps. A second pair of “concentrator” ASICs - ECON-T and ECON-D - takes the data from the HGCROC channels and packages them for transmission via optical links to the off-detector electronics. The ECON-T transmits trigger data at 40 MHz, to form part of the level-1 trigger. The ECON-D transmits concentrated data packets at up to 1 MHz, upon reception of a level-1 trigger signal. In addition to these ASICs, HGCal will use modified versions of common HL-LHC electronics developments, for the power chain and the optical control and readout. The dense nature of the HGCal provides additional challenges for the electronic boards and cabling. In this proceedings the overall HGCal front electronics scheme, including the latest performance of the HGCROC and ECON ASICs is presented.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Toward the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: The case of rutile GeO 2

Ultrawide-band-gap (UWBG) semiconductors are promising for fast, compact, and energy-efficient power-electronics devices. Their wider band gaps result in higher breakdown electric fields that enable high-power switching with a lower energy loss. Yet, the leading UWBG semiconductors suffer from intrinsic materials' limitations with regard to their doping asymmetry that impedes their adoption in CMOS technology. Improvements in the ambipolar doping of UWBG materials will enable a wider range of applications in power electronics as well as deep-UV optoelectronics. These advances can be accomplished through theoretical insights on the limitations of current UWBG materials coupled with the computational prediction and experimental demonstration of alternative UWBG semiconductor materials with improved doping and transport properties. As an example, we discuss the case of rutile GeO2 (r-GeO 2 ), a water-insoluble GeO 2 polytype, which is theoretically predicted to combine an ultra-wide gap with ambipolar dopability, high carrier mobilities, and a higher thermal conductivity than β-Ga 2 O 3 . The subsequent realization of single-crystalline r-GeO 2 thin films by molecular beam epitaxy provides the opportunity to realize r-GeO 2 for electronic applications. Future efforts toward the predictive discovery and design of new UWBG semiconductors include advances in first-principles theory and high-performance computing software, as well as the demonstration of controlled doping in high-quality thin films with lower dislocation densities and optimized film properties.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Characterization of a gigabit transceiver for the ATLAS inner tracker pixel detector readout upgrade

We present a gigabit transceiver prototype Application Specific Integrated Circuit (ASIC), GBCR, for the ATLAS Inner Tracker (ITk) Pixel detector readout upgrade. GBCR is designed in a 65-nm CMOS technology and consists of four upstream receiver channels, a downstream transmitter channel, and an Inter-Integrated Circuit (I2C) slave. The upstream channels receive the data at 5.12 Gbps passing through 5-meter 34-American Wire Gauge (AWG) Twin-axial (Twinax) cables, equalize and retime them with a recovered clock, and then drive an optical transmitter. The downstream channel receives the data at 2.56 Gbps from an optical receiver and drives the cable as same as the upstream channels. The jitter of the upstream channel output is measured to be 35 ps (peak-peak) when the Clock-Data Recovery (CDR) module is turned on and the jitter of the downstream channel output after the cable is 138 ps (peak-peak). The power consumption of each upstream channel is 72 mW when the CDR module is turned on and the downstream channel consumes 27 mW. GBCR survives the total ionizing dose of 200 kGy.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Characterization of the CMS Endcap Timing Layer readout chip prototype with charge injection

We present the characterization of a readout Application-Specific Integrated Circuit (ASIC) for the CMS Endcap Timing Layer (ETL) of the High-Luminosity LHC upgrade with charge injection. The ASIC, named ETROC and developed in a 65 nm CMOS technology, reads out a 16× 16 pixel matrix of the Low-Gain Avalanche Detector (LGAD). The jitter contribution from ETROC is required to be below 40 ps to achieve the 50 ps overall time resolution per hit. The analog readout circuits in ETROC consist of the preamplifier and the discriminator. The preamplifier handles the LGAD charge signal with the most probable value of around 15 fC. The discriminator generates the digital pulse, which provides the Time-Of-Arrival (TOA, leading edge) and Time-Over-Threshold (TOT, pulse width) information. The prototype of ETROC (ETROC0) that implements a single channel of analog readout circuits has been evaluated with charge injection. The jitter of the analog readout circuits, measured from the discriminator's leading edge, is better than 16 ps for a charge larger than 15 fC with the sensor capacitance. The time walk resulting from different pulse heights can be corrected using the TOT measurement. The time resolution distribution has a standard deviation of 29 ps after the time-walk correction from the charge injection. At room temperature, the preamplifier's power consumption is measured to be 0.74 mW and 1.53 mW per pixel in the low- and high-power mode, respectively. Finally, the measured power consumption of the discriminator is 0.84 mW per pixel. With the ASIC alone or the LGAD sensor, The characterization performances fulfill the ETL's challenging requirements.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

In-pixel automatic threshold calibration for the CMS Endcap Timing Layer readout chip

We present the implementation and verification of an in-pixel automatic threshold calibration circuit for the CMS Endcap Timing Layer (ETL) in the High-Luminosity LHC upgrade. The discriminator threshold of the ETL readout chip (ETROC) needs to be calibrated regularly to mitigate the circuit baseline change. Traditional methods need a lot of communication through a slow control system hence are time-consuming. This paper describes an in-pixel automatic scheme with improvements in operating time and usability. In this scheme, a sample-accumulation circuit is used to measure the average discriminator output. A binary successive approximation and linear combination scan are applied to find the equivalent baseline. The actual calibration procedure has been first implemented in FPGA firmware and tested with the ETROC front-end prototype chip (ETROC0). The calibration circuit has been implemented with Triple Modular Redundancy (TMR) and verified with Single Event Effects (SEEs) simulation. A complete calibration process lasts 35 ms with a 40 MHz clock. In the worst case, the dynamic and static power consumption are estimated to be 300 uW and 10.4 uW, respectively. The circuit design, implemented in a 65 CMOS technology, will be integrated into ETROC2, the next iteration of the ETROC with a 16 x16 pixel matrix.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

A 20 Gbps PAM4 data transmitter ASIC for particle physics experiments

We present the design and test results of a novel data transmitter ASIC operating up to 20.48 Gbps with 4-level Pulse-Amplitude-Modulation (PAM4) for particle physics experiments. This ASIC, named GBS20, is fabricated in a 65 nm CMOS technology. Two serializers share a 5.12 GHz Phase Locked Loop (PLL) clock. The outputs from the serializers are combined into a PAM4 signal that directly drives a Vertical-Cavity-Surface-Emitting-Laser (VCSEL). The input data channels, each at 1.28 Gbps, are scrambled with an internal 2$^{7}$-1 Pseudo-Random Binary Sequence (PRBS), which also serves as a frame aligner. GBS20 is tested to work at 10.24 and 20.48 Gbps with a VCSEL-based Transmitter-Optical-Subassembly (TOSA). The power consumption of GBS20 is below 238 mW and reduced to 164 mW in the low-power mode.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

The SparkPix-S ASIC for the sparsified readout of 1 MHz frame-rate X-ray cameras at LCLS-II: pixel design and simulation results

Exploiting the “sparse” nature of the information in XPCS (X-ray Photon Correlation Spectroscopy) and XSVS (Speckle Visibility Spectroscopy) experiments, we present the SparkPix-S, a 3-sides buttable Application Specific Integrated Circuit (ASIC) based on a sparsified readout strategy for large-format hybrid detectors. The SparkPix-S architecture, based on the successful ePix family, will be composed as follows: a front-end 2-D matrix of 384×352 square pixels with 50 µm pitch is arranged to match the dimensions of a PIN Si-sensor matrix; charge readout, signal shaping and amplitude discrimination is performed at pixel-level, by means of a low-power (<18 µW) analog processor, which, in case of an event, negotiates access to an analog bus placed every other column; on the chip periphery (balcony), the information on each bus is digitized by an array of successive approximation analog-to-digital converters (SAR-ADCs) running at 10 Msps; on the digital back-end the global logic will generate the output data stream using low-voltage differential signalling (LVDS). A first prototype of the SparkPix-S, with a reduced matrix size of 96×96 pixels, is currently under production on a 130 nm CMOS technology. Simulated performance results show an equivalent noise charge <60 el. r.m.s. at 1 MHz repetition rate, with a maximum input energy of 60 keV and capability to discriminate charge signals with equivalent energy as low as 900 eV.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

GRAPH — an readout ASIC for large MCP based detectors

We present a programmable 16 channel, mixed signal, low power readout ASIC, having the project historically named Gigasample Recorder of Analog waveforms from a PHotodetector (GRAPH). It is designed to read large aperture single photon imaging detectors using micro channel plates for charge multiplication, and measuring the detector's response on crossed strips anodes to extrapolate the incoming photon position. Each channel consists of a fast, low power and low noise charge sensitive amplifier, which provides a myriad of coarse and fine programmable options for gain and shaping settings. Further, the amplified signal is recorded using, to our knowledge novel, the Hybrid Universal sampLing Architecture (HULA) ADC. A kind of mixed signal double buffer memory, that enables concurrent waveform recording, and selected event digitized data extraction. The sampling frequency is freely adjustable between few kHz up to 125 MHz, while the chip's internal digital memory holds a history 2048 samples for each channel, with a digital headroom of 12 bits. An optimized region of interest sample-read algorithm allows to extract the information just around the event pulse peak, while selecting the next event, thus substantially reducing the operational dead time. The chip is designed in 130 nm TSMC CMOS technology, and its power consumption is around 47 mW per channel.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Lifetime study of the ColdADC for the Deep Underground Neutrino Experiment

ColdADC is a custom ASIC digitizer implemented in 65 nm CMOS technology using specialized techniques for long-term reliability in cryogenic environments. ColdADC was developed for use in the DUNE Far Detector complex, which will consist of four liquid argon time projection chambers. Each contains 17 kilotons liquid argon as the target material in order to measure neutrino oscillations. Approximately 40,000 ColdADC ASICs will be installed for DUNE in the first two large detectors and will be operated at cryogenic temperatures during the experiment without replacement. The lifetime of the ColdADC is a critical parameter affecting the data quality and physics sensitivity of the experiment. A measurement of the lifetime of the ColdADC was carried out, and the results shown in this paper assure orders of magnitude longer lifetime of the ColdADC than the planned operation time of the detectors.

Front-end electronics for detector readout↗
DOE OSTI2024

Smart pixel sensors: towards on-sensor filtering of pixel clusters with deep learning

Highly granular pixel detectors allow for increasingly precise measurements of charged particle tracks. Next-generation detectors require that pixel sizes will be further reduced, leading to unprecedented data rates exceeding those foreseen at the High- Luminosity Large Hadron Collider. Signal processing that handles data incoming at a rate of $\mathcal{O}$(40 MHz) and intelligently reduces the data within the pixelated region of the detector at rate will enhance physics performance at high luminosity and enable physics analyses that are not currently possible. Using the shape of charge clusters deposited in an array of small pixels, the physical properties of the traversing particle can be extracted with locally customized neural networks. In this first demonstration, we present a neural network that can be embedded into the on-sensor readout and filter out hits from low momentum tracks, reducing the detector's data volume by 57.1%–75.7%. The network is designed and simulated as a custom readout integrated circuit with 28 nm CMOS technology and is expected to operate at less than 300 μW with an area of less than 0.2 mm 2 . The temporal development of charge clusters is investigated to demonstrate possible future performance gains, and there is also a discussion of future algorithmic and technological improvements that could enhance efficiency, data reduction, and power per area.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

A 194nW Energy-Performance-Aware loT SoC Employing a 5.2nW 92.6% Peak Efficiency Power Management Unit for System Performance Scaling, Fast DVFS and Energy Minimization

A self-powered IoT system-on-chip (SoC) reduces power to sub-μw and employs multiple power-management techniques to trade-off ultra-low power (ULP), higher performance, smaller energy harvester footprint, and longer operating lifetime. Minimum Energy Point Tracking (MEPT) [1]–[4] keeps an SoC operating at the minimum energy point (MEP) to enhance system lifetime. Previous sample-and-hold MEPT schemes need frequent voltage comparisons and a high-frequency clock that increases power [2]. Current-ratio-based MEPT relies on specialized CMOS technology for body-bias tuning [3]. A switched-capacitor-based MEPT can achieve energy minimization at a targeted performance [4], but it uses a 30MHz clock witμW power consumption and low power efficiency. For ULP IoT applications, SoCs need to have ultra-low quiescent power, high efficiency for energy delivery, performance scaling based on available energy, and energy minimization to increase system lifetime. In this work, we propose an ULP IoT SoC with a triple-mode power management unit (PMU) that integrates energy-performance scaling, event-driven fast DVFS, and MEPT features to improve the system energy efficiency, as shown in Fig. 13.8.1. This work achieves a minimum 194nW power consumption for the SoC and 5.2nW quiescent power for the PMU with a 92.6% peak efficiency and >10 4 dynamic range. The timing waveform in Fig. 13.8.1 (bottom), demonstrates the transition of the three modes including energy aware (EA), performance aware (PA), and MEPT based on event priority and input voltage level which reflects the energy availability. As such, the system energy consumption and performance could be well-balanced based on both the input and output conditions.

self-powered IoT system-on-chip (SoC)↗
DOE OSTI2023

Experimental results from the characterization of a 32-channels mixed-signal processor for the GAPS experiment

This work describes the experimental results obtained from the characterization of a 32-channels readout ASIC that is the core of a module composed by 4 Lithium-drifted Silicon, Si(Li), detectors. The module is the building block of a tracker in an upcoming balloon experiment. The activity is carried out within the General AntiParticle Spectrometer (GAPS) international collaboration, whose objective is the indirect detection of dark matter through the detection of antiparticles present in cosmic rays at low energies. The balloon flight is foreseen in 2024 from the McMurdo station in Antarctica. The ASIC is designed in a 180 nm CMOS technology and has 32 low-noise analog readout channels featuring a dynamic compression of the signal, an 11-bit SAR ADC, and a digital back-end section responsible for channel setting and for sending digital information to the data acquisition system of the tracker. This work has a twofold goal: it intends on the one hand to verify the performance of the circuit, on the other to select at least 300 good samples to be used for the assembly of the GAPS Si(Li) tracker.

Riceputi, Elisa↗
DOE OSTI2025

A Radiation-Hard 8-Channel 15-Bit 40-MSPS ADC for the ATLAS Liquid Argon Calorimeter Readout

The custom design of a radiation-hardened, 8-channel, 40-MSPS, 15-bit resolution, 14.2-bit dynamic range, 11.4-ENOB ADC data acquisition ASIC fabricated in a commercial 65-nm triple-well CMOS technology is presented. The ADC is developed for and integrates seamlessly into the readout system for the ATLAS liquid argon (LAr) calorimeter in the high-luminosity large hadron collider (HLLHC) upgrade at CERN, which will require a total of 364 936 ADC channels. A three-stage MDAC+SAR pipelined ADC architecture was designed to meet the physics requirements and scientific goals of the ATLAS experiment. The ADC is a fully self-contained data acquisition system that includes foreground calibration, digital data processing, digital control, and supporting circuitry. The measured performance shows the ADC achieves a competitive dynamic range and SNDR, and it meets or exceeds the ATLAS analog requirements. Radiation tolerance and scalability design considerations were implemented at the device-, circuit-, and system-level. Radiation-hardening-by-design techniques used include redundancy for digital circuits, the use of MiM capacitors, and a hybrid RC-DAC for the ADC core. The ADC ASIC was demonstrated to be robust against the effects of the intense radiation expected in the HL-LHC experimental environment.

DAQ↗
DOE OSTI2022

FALCON readout channel for X-ray ptychography applications

This work reports the current state of the development of a pixelated readout for nanometer resolution X-ray ptychography applications. A very dense, low-noise and low-power pixel developed in a commercial 65nm CMOS technology is envisioned for such applications, targeting a pixel area of 150 μm × 150 μm, an overall noise of 200e- rms and a power consumption of 150μW per pixel. In the paper, an introduction to the application and an overview of the experimental setup are given, the designed frontend channel is reported and revised in its components and simulation results of the schematic-level design are shown and discussed.

Lazzaroni, Paolo↗