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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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NASA NTRS2018

Nanomanufacturing of Graphene Nanosheets Through Hole Engineering

Facile and scalable fabrication of highly dense and high quality graphene films and articles is extremely attractive for a range of electronic and mechanical applications. Pristine, high quality graphene with its inherent impermeability poses challenges in fabricating dense films and thick parts with high electrical conductivity due to the difficulty in removing trapped air and/or solvents used in various fabrication methods. To overcome this deficiency, nano-holes were intentionally created in pristine graphene (“holey graphene”) with an average diameter of approximately 15 nm. The holes serve as pathways for the rapid removal of gases or liquids and enable the fabrication of dense holey graphene nanostructures. Subsequently, a high temperature process is applied to effectively repair the nano-holes and recover the high quality graphene conjugated network. Through the creation and repair of the nano-holes, dense graphene articles were created that exhibited an ultrahigh conductivity of 2209 S/cm and a high carrier mobility of 673 cm2V-1s-1. This unique processing methodology enables the facile and scalable fabrication of high quality graphene constructs for a variety of applications.

Yanan Chen↗
NASA NTRSDate not supplied

Mixed-Domain Charge Transport in the S-Se System from First Principles

Lithium-sulfur (Li-S) batteries are emerging systems heralded for the inexpensive cathode component (in S)and higher energy density than that of typical Li-ion batteries [1–5]. For the latter reason in particular, they are drawing high levels of interest for long-range electric air-craft applications where high gravimetric energy density is of utmost importance. Unfortunately, S by itself has a much too low electrical conductivity to be useful asa stand-alone cathode material. One effort to alleviate these shortcomings is to alloy sulfur with selenium [6–13],which is expected to improve the paltry conductivity of S as Se, depending on the phase, is 10∼30 times more conductive. This, however, comes at the cost of the heavier mass of Se that works against the gravimetric energy density. The charge transport behavior in the S1−xSex alloy system, not yet fully known or understood, is necessary for one to navigate the trade-offs between conductivity and other variables such as energy density en route to ultimately determining the optimum Se content, on demand. Charting carrier mobilities and conductivities in the S-Se system throughout the compositional spectrum from first principles at a predictive level is therefore critical.

Junsoo Park↗
NASA NTRSDate not supplied

Quantum Mechanical Simulations of Dynamics of Electronic Excitations in Low-Dimensional Photovoltaics Materials

Dynamics of electronically excited states including exciton generation and relaxation, exciton-exciton interaction, and charge/energy transfer and transport, are critical to understanding and optimizing photovoltaic materials. Although considerable progress has been made, accurate experimental characterization of such crucial dynamics remains extremely challenging, especially in low-dimensional materials. In this talk, I will discuss how the advancement of quantum mechanical simulations of the dynamics of electronic excitations can reveal the physical mechanisms hindering or improving solar energy harvest. Specifically, we find that surface dangling-bond defects on silicon quantum dots cause rapid charge recombination and low carrier mobility in the inorganic-organic PV cells. Although small quantum dots are essentially free of defects, their optical gaps are too large. To solve this issue, a full-spectrum-light-absorption scheme is computationally designed, taking advantage of complexity and flexibility of low-dimensional materials consisting of different characteristics and dimensions. In this scheme the multifunctional ligands are used to (1) passivate against oxidation, (2) facilitate interfacial charge transfer, and (3) improve both charge transport and optical absorption. A joint theoretical and experimental study has demonstrated the feasibility of this approach. Finally, I will briefly talk about how this scheme and the well-tested quantum mechanical simulations can be employed to help improve energy-conversion efficiency in perovskite photovoltaics including perovskite-based tandem cells.

Zhigang Wu↗
NASA NTRSDate not supplied

Power Hibernation for Low-Cost Solar Powered Lunar Missions

Because the surface of the Moon drops to cryogenic temperatures, no solar-powered lunar spacecraft have reliably operated beyond a single lunar day. Passive thermal control cannot keep a spacecraft sufficiently warm for the 354-hour lunar night, and active thermal control requires a dramatic increase in battery mass at the expense of payload mass. Extreme conditions seen on the lunar surface suggest a radioisotope solution is ideal, but mass, cost, and schedule are inconsistent with low-cost frequent flight intent of the commercial lunar payload services (CLPS) program. To solve the issue of lunar night survivability without radioisotope sources of power and heat, a lunar power hibernation approach is being developed at the Glenn Research Center, which exploits the ability of common 18650 Lithium-ion cells to passively survive cryogenic freeze-thaw cycles and recover without apparent performance degradation. A key aspect of this hibernation approach is the use of cryogenically operable electronics that safely manage the restoration of the battery thermal environment at lunar dawn. A spacecraft utilizing this strategy will operate into the lunar night on batteries until the state of charge or spacecraft temperature reaches a predetermined threshold. At this point, systems are shut down and the battery is isolated from the main bus to prevent charge or discharge during the freezing and thawing transitions. The system remains passive until lunar dawn, where temperatures can reach as low as 50 K. All electronics must be tolerant to these conditions. When the solar arrays are finally illuminated at lunar dawn, the main bus power electronics will initiate a “cold start” and begin regulating array power. The main bus electronics must be designed to operate at cryogenic temperatures. Array power is used to warm the battery and passive electronics back to operational temperatures. Once batteries are returned to normal temperatures, diagnostics and precharging is performed, as needed, and the battery is reconnected. The overall spacecraft system reboots and returns to nominal operations until lunar night returns. To assure that we can develop batteries suited for many hibernation freeze/thaw cycles, STMD Space Technology Research Grant Program (STRG) has selected two principal investigators that will thoroughly characterize of the Li-ion cell through the freeze-thaw process, investigate degradation mechanisms, and identify potential diagnostic techniques. STMD STRG is also funding an investigation of Gallium-Nitride semiconductors for cryogenic power applications. This work includes physics-informed modeling that considers cryogenic conductivity, carrier mobility, and quantum effects that govern semiconductor performance at cryogenic temperatures. These models can enable engineers to develop accurate cryogenic simulation models that assist in the design of power controls stable over the entire lunar surface temperature range. Meanwhile, Glenn is performing cryogenic testing of batteries and electronics, establishing design guidelines for power applications in extreme cold lunar environment, and potentially developing a hibernation technology demonstrator. The hibernation approach will enable low-cost lunar robotic missions to extend their operating lifetime to many months while minimizing development costs and impact on payload capacity. The need for cryogenically operable electronics is restricted to only main bus power and battery controls, as the majority of systems simply need to passively tolerate cryogenic temperatures. This allows developers to continue to exploit the cost savings of legacy and COTS hardware with minimum modification. For these reasons, lunar power hibernation is a viable near-term solution for lunar night survivability for solar powered commercial landers.

Space power↗
NASA NTRS2000

Characterization of Electronic Materials HgZnSe and HgZnTe Using Innovative and Conventional Techniques

HgZnSe and HgZnTe are electronic materials of interest for potential IR detector and focal plane array applications due to their improved strength and compositional stability over HgCdTe, but they are difficult to grow on Earth and to fully characterize. Conventional contact methods of characterization, such as Hall and van der Paw, although adequate for many situations are typically labor intensive and not entirely suitable where only very small samples are available. To adequately characterize and compare properties of electronic materials grown in low earth orbit with those grown on Earth, innovative techniques are needed that complement existing methods. This paper describes the implementation and test results of a unique non-contact method of characterizing uniformity, mobility, and carrier concentration together with results from conventional methods applied to HgZnSe and HgZnTe. The innovative method has advantages over conventional contact methods since it circumvents problems of possible contamination from alloying electrical contacts to a sample and also has the capability to map a sample. Non- destructive mapping, the determination of the carrier concentration and mobility at each place on a sample, provides a means to quantitatively compare, at high spatial resolution, effects of microgravity on electronic properties and uniformity of electronic materials grown in low-Earth orbit with Earth grown materials. The mapping technique described here uses a 1mm diameter polarized beam of radiation to probe the sample. Activation of a magnetic field, in which the sample is placed, causes the plane of polarization of the probe beam to rotate. This Faraday rotation is a function of the free carrier concentration and the band parameters of the material. Maps of carrier concentration, mobility, and transmission generated from measurements of the Faraday rotation angles over the temperature range from 300K to 77K will be presented. New information on band parameters, obtained by combining results from conventional Hall measurements of the free carrier concentration with Faraday rotation measurements, will also be presented. One example of how this type of information was derived is illustrated in the following figure which shows Faraday rotation vs wavelength modeled for Hg(l-x)ZnxSe at a temperature of 300K and x=0.07. The plasma contribution, total Faraday rotation, and interband contribution to the Faraday rotation, are designated in the Figure as del(p), FR tot, and del(i) respectively. Experimentally measured values of FR tot, each indicated by + , agree acceptably well with the model at the probe wavelength of 10.6 microns. The model shows that at the probe wavelength, practically all the rotation is due to the plasma component, which can be expressed as delta(sub p)= 2pi(e(sup 3))NBL/c(sup 2)nm*(sup 2) omega(sup 2). In this equation, delta(sub p) is the rotation angle due to the free carrier plasma, N is the free carrier concentration, B the magnetic field strength, L the thickness of the sample, n the index of refraction, omega the probe radiation frequency, c the speed of light, e the electron charge, and m* the effective mass. A measurement of N by conventional techniques, combined with a measurement of the Faraday rotation angle allows m* to be accurately determined since it is an inverse square function.

Tanton, George↗
NASA NTRS1979

Electron mobility and free-carrier absorption in GaAs - Determination of the compensation ratio

Theoretical calculations of electron mobility and free-carrier absorption in n-type GaAs at room temperature were carried out taking into consideration all major scattering processes. It was found that satisfactory agreement between theoretical and experimental results on free-carrier absorption is obtained only when the effect of compensation is quantitatively taken into account. In conjunction with experimental studies it is shown that the electron mobility (for n greater than 10 to the 15th per cu cm) and free-carrier absorption (for n greater than 10 to the 16th per cu cm) are sufficiently sensitive to the ionized impurity concentration to provide a reliable means for determining the compensation ratio. Convenient procedures are presented for the determination of the compensation ratio from the free-carrier absorption coefficient and from the computed values of room-temperature electron mobility. Values of the compensation ratio obtained by these two procedures are in good agreement provided the carrier-concentration variations in the material are not appreciably greater than 10%.

Walukiewicz, W.↗
NASA NTRS1990

O(-) identified at high temperatures in CaO-based catalysts for oxidative methane dimerization

A technique called charge-distribution analysis (CDA) is employed to study mobile charge carriers in the oxidation catalysts CaO, CaO with 11 percent Na2O, and CaO with 10 percent La2O3. A threshold temperature of about 550-600 C is identified at which highly mobile charge carriers are present, and the CDA studies show that they are O(-) states. The present investigation indicates the usefulness of CDA in catalysis research with pressed powder samples and gas/solid reactions.

Freund, F.↗
NASA NTRS1976

Chemical vapor deposition growth

A laboratory type CVD reactor system with a vertical deposition chamber and sample pedestal heated by an external RF coil has been extensively modified by installation of mass flow controllers, automatic process sequence timers, and special bellows-sealed air-operated valves for overall improved performance. Various film characterization procedures, including classical metallography, SEM analyses, X ray diffraction analyses, surface profilometry, and electrical measurements (resistivity, carrier concentration, mobility, spreading resistance profiles, and minority-carrier lifetime by the C-V-t method) area used to correlate Si sheet properties with CVD parameters and substrate properties. Evaluation procedures and measurements are given. Experimental solar cell structures were made both in epitaxial Si sheet (on sapphire substrates) and in polycrystalline material on alumina substrates, the former to provide an indication of what might be an upper limit on performance of the latter. Preliminary results are given, as obtained in cell structures not specially designed to allow for the unique properties of the sheet material, and fabricated in material known to be far from optimum for photovoltaic performance. Low power conversion efficiencies have been obtained in the epitaxial as well as the polycrystalline Si sheet.

Ruth, R. P.↗
NASA NTRS1990

Carrier recovery techniques on satellite mobile channels

An analytical method and a stored channel model were used to evaluate error performance of uncoded quadrature phase shift keying (QPSK) and M-ary phase shift keying (MPSK) trellis coded modulation (TCM) over shadowed satellite mobile channels in the presence of phase jitter for various carrier recovery techniques.

Vucetic, B.↗
NASA NTRS1986

Tone calibration technique: A digital signaling scheme for mobile applications

Residual carrier modulation is conventionally used in a communication link to assist the receiver with signal demodulation and detection. Although suppressed carrier modulation has a slight power advantage over the residual carrier approach in systems enjoying a high level of stability, it lacks sufficient robustness to be used in channels severely contaminated by noise, interference and propagation effects. In mobile links, in particular, the vehicle motion and multipath waveform propagation affect the received carrier in an adverse fashion. A residual carrier scheme that uses a pilot carrier to calibrate a mobile channel against multipath fading anomalies is described. The benefits of this scheme, known as tone calibration technique, are described. A brief study of the system performance in the presence of implementation anomalies is also given.

Davarian, F.↗
NASA NTRS2020

Development of High-Performance Graphene-HgCdTe Detector Technology for Mid-Wave Infrared Applications

A high-performance graphene-based HgCdTe detector technology is being developed for sensing over the mid-wave infrared (MWIR) band for NASA Earth Science, defense, and commercial applications. This technology involves the integration of graphene into HgCdTe photodetectors that combines the best of both materials and allows for higher MWIR(2-5 m) detection performance compared to photodetectors using only HgCdTe material. The interfacial barrier between the HgCdTe-based absorber and the graphene layer reduces recombination of photogenerated carriers in the detector. The graphene layer also acts as high mobility channel that whisks away carriers before they recombine, further enhancing the detector performance. Likewise, HgCdTe has shown promise for the development of MWIR detectors with improvements in carrier mobility and lifetime. The room temperature operational capability of HgCdTe-based detectors and arrays can help minimize size, weight, power and cost for MWIR sensing applications such as remote sensing and earth observation, e.g., in smaller satellite platforms. The objective of this work is to demonstrate graphene-based HgCdTe room temperature MWIR detectors and arrays through modeling, material development, and device optimization. The primary driver for this technology development is the enablement of a scalable, low cost, low power, and small footprint infrared technology component that offers high performance, while opening doors for new earth observation measurement capabilities.

Sood, Ashok K.↗
NASA NTRS1989

Molecular beam epitaxial growth of high-quality InSb on InP and GaAs substrates

Epitaxial layers of InSb were grown on InP and GaAs substrates by molecular beam epitaxy. The dependence of the epilayer quality on flux ratio, J sub Sb4/J sub In, was studied. Deviation from an optimum value of J sub Sb4/J sub In (approx. 2) during growth led to deterioration in the surface morphology and the electrical and crystalline qualities of the films. Room temperature electron mobilities as high as 70,000 and 53,000 sq cm /V-s were measured in InSb layers grown on InP and GaAs substrates, respectively. Unlike the previous results, the conductivity in these films is n-type even at T = 13 K, and no degradation of the electron mobility due to the high density of dislocations was observed. The measured electron mobilities (and carrier concentrations) at 77 K in InSb layers grown on InP and GaAs substrates are 110,000 sq cm/V-s (3 x 10(15) cm(-3)) and 55,000 sq cm/V-s (4.95 x 10(15) cm(-3)), respectively, suggesting their application to electronic devices at cryogenic temperatures.

Oh, J. E.↗
NASA NTRS1989

Molecular beam epitaxial growth of high-quality InSb on InP and GaAs substrates

Epitaxial layers of InSb were grown on InP and GaAs substrates by molecular beam epitaxy. The dependence of the epilayer quality on flux ratio, J sub Sb4/J sub In, was studied. Deviation from an optimum value of J sub Sb4/J sub In (approx. 2) during growth led to deterioration in the surface morphology and the electrical and crystalline qualities of the films. Room temperature electron mobilities as high as 70,000 and 53,000 sq cm /V-s were measured in InSb layers grown on InP and GaAs substrates, respectively. Unlike the previous results, the conductivity in these films is n-type even at T = 13 K, and no degradation of the electron mobility due to the high density of dislocations was observed. The measured electron mobilities (and carrier concentrations) at 77 K in InSb layers grown on InP and GaAs substrates are 110,000 sq cm/V-s (3 x 10(15) cm(-3)) and 55,000 sq cm/V-s (4.95 x 10(15) cm(-3)), respectively, suggesting their application to electronic devices at cryogenic temperatures.

Oh, J. E.↗
NASA NTRS1992

Temperature independent quantum well FET with delta channel doping

A temperature independent device is presented which uses a quantum well structure and delta doping within the channel. The device requires a high delta doping concentration within the channel to achieve a constant Hall mobility and carrier concentration across the temperature range 300-1.4 K. Transistors were RF tested using on-wafer probing and a constant G sub max and F sub max were measured over the temperature range 300-70 K.

Young, P. G.↗