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NASA NTRS1976

A computer-aided telescope pointing system utilizing a video star tracker

The Video Inertial Pointing (VIP) System is being developed to satisfy the acquisition and pointing requirements of astronomical telescopes. VIP employs a single video sensor to generate three-axis pointing error signals and to provide inputs for a cathode ray tube (CRT) display of the star field. The pointing error signals update the telescope's gyro stabilization system. The CRT display facilitates target acquisition and positioning of the telescope by a remote operator. The present paper describes the analysis, simulation, and hardware development of a prototype, advanced VIP system. An early model of the system utilizing a silicon-intensified target vidicon camera has flown on a balloon-borne telescope and is briefly described. The advanced system, which can employ either a vidicon camera or a charge-coupled device video sensor, has been tested using an analog/digital hybrid simulation. The advanced VIP hardware is described, and the simulation results presented.

Lorell, K. R.↗

NASA NTRS1976

Spectral analysis using CCDs

Charge-coupled devices (CCDs) are ideally suited for performing sampled-data transversal filtering operations in the analog domain. Two algorithms have been identified for performing spectral analysis in which the bulk of the computation can be performed in a CCD transversal filter; the chirp z-transform and the prime transform. CCD implementation of both these transform algorithms is presented together with performance data and applications.

Hewes, C. R.↗

NASA NTRS1977

Uranus rings - An optical search

The discovery of rings surrounding Uranus has prompted reexamination of telescopic observations made a year ago with a solid-state area detector called a charge-coupling device (CCD). The extreme narrowness of the rings apparently caused them to be hidden in glare from the planet, the reflectivity of which is very high in the blue and green regions of the spectrum. However, Uranus appears as a much darker image in the near-infrared spectral regions detected by the CCD. Although no direct evidence of the rings is obtainable from the CCD images, some simplifying assumptions permit the deduction from the CCD data that average reflectivity of individual particles composing the rings is at most a few percent, much closer to that of carbonaceous chondritic material than to that of the ice-coated particles in Saturn's rings.

Smith, B. A.↗

NASA NTRS1977

CCD architecture for spacecraft SAR image processing

A real-time synthetic aperture radar (SAR) image processing architecture amenable to future on-board spacecraft applications is currently under development. Using state-of-the-art charge-coupled device (CCD) technology, low cost and power are inherent features. Other characteristics include the ability to reprogram correlation reference functions, correct for range migration, and compensate for antenna beam pointing errors on the spacecraft in real time. The first spaceborne demonstration is scheduled to be flown as an experiment on a 1982 Shuttle imaging radar mission (SIR-B). This paper describes the architecture and implementation characteristics of this initial spaceborne CCD SAR image processor.

Arens, W. E.↗

NASA NTRS1978

Some performance tests of a microarea AES

An Auger electron spectroscopy (AES) system which has a submicron analysis capability is described. The system provides secondary electron imaging, as well as micro- and macro-area AES. The resolution of the secondary electron image of an oxidized Al contact pad on a charge-coupled device chip indicates a primary beam size of about 1000 A. For Auger mapping, a useful resolution of about 4000 A is reported

Todd, G.↗

NASA NTRS1979

Reliability of imaging CCD's

Report on reliability of imaging charge-coupled devices (CCD's) is intended to augment rather-meager existing information on CCD reliability. Study focuses on electrical and optical performance tests, packaging constraints, and failure modes of one commercially available device (Fairchild CCD121H).

Beal, J. R.↗

NASA NTRS1978

Application of microprocessors to spacecraft synthetic aperture radar processing

A ground-based digital synthetic aperture radar (SAR) processor capable of correlating images from raw spacecraft data at real-time rates is currently under development. The processor design requirements are particularly formidable due to (1) range migration effects resulting from planetary curvature and rotation, (2) antenna beam pointing errors, and (3) variation of the Doppler reference function with changing orbital parameters. Based upon the current effort, this paper describes a candidate real-time on-board SAR processing implementation approach that might evolve for future spacecraft applications. Key features include the use of custom large scale integration (LSI) charge-coupled device (CCD) technology to accomplish the correlation functions and microprocessor technology to effect control.

Arens, W. E.↗

NASA NTRS1979

Autonomous attitude determination systems

A summary of autonomous attitude determination systems is presented by separating it into four areas: types of attitude determination systems which can be automated, a description of the attitude determination problem and its solution, specific types of sensors, and the processor requirements of two automated systems. The sensors used in attitude determination have been characteristically carried on-board the spacecraft in the past, so the major development requirement of automated systems is in the area of on-board processors. It is concluded that standardization of computers is not as beneficial as the standardization of computer architecture and the basic components which go into making them. It is also concluded that charge-coupled devices (CCD) or other solid state star tracking devices offer considerable advantages over the image-dissector type of star tracker.

Lowrie, J. W.↗

DOE OSTI2025

Charge Trap Analysis in a SENSEI Skipper-CCD: Understanding Low-Energy Backgrounds in Rare-Event Searches

Skipper Charge-Coupled Devices (Skipper-CCDs) are ultra-low-threshold detectors capable of detecting energy deposits in silicon at the eV scale. Increasingly used in rare-event searches, one of the major challenges in these experiments is mitigating low-energy backgrounds. In this work, we present results on trap characterization in a silicon Skipper-CCD produced in the same fabrication run as the SENSEI experiment at SNOLAB. Lattice defects contribute to backgrounds in rare-event searches through single-electron charge trapping. To investigate this, we employ the charge-pumping technique at different temperatures to identify dipoles produced by traps in the CCD channel. We fully characterize a fraction of these traps and use this information to extrapolate their contribution to the single-electron background in SENSEI. We find that this subpopulation of traps does not contribute significantly but more work is needed to assess the impact of the traps that can not be characterized.

Brusco, Agustin [Buenos Aires U.]↗

DOE OSTI2026

MAS-CCD: New technique for measuring low-level charge content based on the multiple amplifier architecture

Low-noise detectors are a key technology for the next generation of astronomical instruments aimed at spectroscopy of faint objects and the search for exoplanets. In this context, the multiple-amplifier sensing charge-coupled device (MAS-CCD) emerges as a promising technology for future scientific instruments. A critical parameter affecting the performance of these devices is spurious charge, produced by the clocking of the gates. Its measurement is typically challenging with existing methods. In practice, the optimization of this parameter often relies on empirical procedures that require significant time and careful consideration of the trade-off with full-well capacity. In this work, we present a new technique to estimate spurious charge based on covariance analysis of the output amplifiers of the MAS-CCD, which measures the same charge packet in different amplifiers at different times. The method enables fast and precise measurements of spurious charge under operating conditions where conventional approaches are difficult to apply. We develop the theoretical framework of the method and validate the model through simulations. The results demonstrate the feasibility of this approach and suggest that it could serve as a basis for reliable large-scale characterization of sensor performance.

Gamero, Miqueas E. [Buenos Aires, CONICET; Fermila↗

DOE OSTI2026

Characterization of Spurious Charge in SENSEI Skipper-CCDs

Skipper Charge-Coupled Devices (Skipper-CCDs) are a leading technology in the search for sub-GeV dark matter and coherent elastic neutrino-nucleus scattering. A key background for rare-event searches with these detectors arises from "spurious charge" -- single-electron events generated when charges are transferred through the active region to the serial register, and across the serial register to the readout stage. We present a characterization of spurious charge in both the active region and the serial register of SENSEI Skipper-CCDs, and show that, in a well-shielded low-background environment, the dominant contribution originates in the serial register during Skipper readout, when horizontal clocks are held at constant voltage between pixel transfers. Motivated by this finding, we develop a "tri-level" clocking scheme in which the held-low phase is raised to an intermediate voltage during readout to suppress trap-mediated charge generation. Using the SENSEI detector near the MINOS cavern, we measure a serial-register single-electron density of $(2.9 \pm 0.1) \times 10^{-5}$ electrons/pixel/image under standard SENSEI readout conditions, reduced to $(4.0 \pm 0.4) \times 10^{-6}$ electrons/pixel/image with tri-level clocking -- a factor of $\sim$7 improvement. This technique offers a promising path to lower backgrounds in current and future Skipper-CCD experiments.

Wu, Yikai [YITP, Stony Brook; SUNY, Stony Brook]↗

DOE OSTI2026

In situ cryogenic characterization of proton damage in thick p-channel skipper CCDs

Skipper charge-coupled devices (CCDs) are an offshoot of standard silicon pixel detectors and are capable of performing repeated non-destructive charge measurements, enabling deeply sub-electron readout noise. This capability has opened the door to single-photon counting from the near-infrared ($\sim$1.1 $μ$m) to the soft X-ray (several keV), making these devices strong candidates for future astronomical instruments operating in the photon-starved limit. Furthermore, the p-channel architecture used to fabricate Skipper CCDs on n-type silicon has been demonstrated to have an increased hardness to the intense radiation environment of space. Building upon previous irradiation campaigns on room-temperature sensors, here we describe the first radiation-hardness tests of p-channel skipper CCDs at their cryogenic operating temperatures. We assess the performance of the floating-gate output stage and global CCD parameters (charge transfer inefficiency, dark current, hot pixels, and charge traps). We find that these devices maintain excellent performance after displacement damage doses equivalent to ${\sim}$10 years at the Earth/Sun L2 Lagrange point, demonstrating for the first time that these sensors remain radiation-hard in realistic deep-space thermal and radiation environments.

Roach, Brandon M. [Chicago U., KICP] (ORCID:000000↗

NASA NTRS1976

Solid state television camera

The design, fabrication, and tests of a solid state television camera using a new charge-coupled imaging device are reported. An RCA charge-coupled device arranged in a 512 by 320 format and directly compatible with EIA format standards was the sensor selected. This is a three-phase, sealed surface-channel array that has 163,840 sensor elements, which employs a vertical frame transfer system for image readout. Included are test results of the complete camera system, circuit description and changes to such circuits as a result of integration and test, maintenance and operation section, recommendations to improve the camera system, and a complete set of electrical and mechanical drawing sketches.

Source record↗

NASA NTRS1976

Development of InSb charge-coupled infrared imaging devices: Linear imager

The following results were accomplished in the development of charge coupled infrared imaging devices: (1) a four-phase overlapping gate with 9 transfers (2-bits) and 1.0-mil gate lengths was successfully operated, (2) the measured transfer efficiency of 0.975 for this device is in excellent agreement with predictions for the reduced gate length device, (3) mask revisions of the channel stop metal on the 8582 mask have been carried out with the result being a large increase in the dc yield of the tested devices, (4) partial optical sensitivity to chopped blackbody radiation was observed for an 8582 9-bit imager, (5) analytical consideration of the modulation transfer function degradation caused by transfer inefficiency in the CCD registers was presented, and (6) for larger array lengths or for the insertion of isolated bits between sensors, improvements in InSb fabrication technology with corresponding decrease in the interface state density are required.

Phillips, J. D.↗

NASA NTRS1977

Further development of an indium antimonide (InSb)Charge-Coupled Infrared Imaging Device (CCIRID), 20-element linear imager

Problems encountered in the development of an indium antimonide charge coupled device for infrared imaging and real time signal processing on the focal plane are summarized. A new generation chip is described which contains, 2, 4, and 20-element imagers, a 4-element TDI array, a monolithic gated charge integrator, and test devices. A system study of a future LANDSAT sensor system configured around an InSb TDi array is considered.

Source record↗

NASA NTRS1977

Charge-coupled differential amplifier

Device solves problem of differential voltage gain in sampled-data metal-oxide semiconductor, producing gain at any frequency compatible with CCD operation, with low noise, low power, good linearity, and high stability.

Hewes, C. R.↗

NASA NTRS1978

Indium antimonide infrared CCD linear imaging arrays with on-chip preprocessing

A description is presented of the fabrication of a new InSb CCD chip based on an improved process which eliminates the limitations inherent with the earlier techniques. This process includes planar junction formation and an aluminum and SiO2 material system which is amenable to state-of-the-art chemical and plasma delineation techniques. Further, the new chip integrates for the first time in monolithic format InSb IR detectors with an InSb CCD. The reported experiments represent the first operation of an InSb infrared CCD array. In addition to fuller characterization of the 20-element charge-coupled infrared imaging device, several factors which influence device performance are currently being addressed. These include surface state density, the CCD output circuit, and storage time (dark current).

Thom, R. D.↗

NASA NTRS1975

Cooled slow-scan performance of a 512 by 320 element charge-coupled imager

A 512 x 320 element charge coupled imager has been fabricated and tested under cooled slow scan conditions to evaluate the device's performance under a variety of long integration and slow scan readout conditions. Operation in a low blooming mode of operation enables the sensor to be exposed with portions of the image heavily overexposed, without those areas spreading into adjacent picture areas. Device design, layout, and operating mode are described, and presents experimental results, including displayed images taken under cooled slow scan operation, are reported.

Rodgers, R. L., III↗