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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4

Parameter extraction for a SPICE model of an hTron superconducting thermal switch

Efficiently simulating large circuits is crucial to the development of superconducting nanowire-based electronics. However, current simulation tools for this technology are not adapted to the scaling of circuit size and complexity. We focus on the multilayered heater-nanocryotron (hTron), a promising superconducting nanowire-based switch used in applications such as superconducting nanowire single-photon detector readout. Previously, the hTron was modeled using traditional finite-element methods, which fall short in simulating systems at a larger scale. An empirical-based method would be better adapted to this task, enhancing both simulation speed and agreement with experimental data. In this work, we perform switching current and activation delay measurements on 17 hTron devices. We then develop a method for extracting physical fitting parameters used to characterize the devices. We build a SPICE behavioral model that reproduces the static and transient device behavior using these parameters, and validate it by comparing its performance to a model developed in prior work, showing an improvement in simulation time by several orders of magnitude. Furthermore, our model provides circuit designers with a tool to help understand the hTron’s behavior during all design stages, thus enabling broader use of the hTron across various new areas of application.

Caloritronics↗

Revealing the electronic structure of the current-induced metastable state in 1T-TaS 2

Among the key features for next-generation memory devices is the need for high-contrast switching between metallic and insulating states with fast switching speed and long lifetime. However, materials exhibiting such properties are rare, and their electronic structure is often poorly understood. Here, by combining state-of-the-art devices with angle-resolved photoemission spectroscopy, we study the emergence of a metastable metallic state from the insulating ground state in the charge-density wave (CDW) material 1T-TaS 2 after applying short current pulses. Analysis of the electronic structure suggests a picture in which 1T-TaS 2 transforms from a band insulator in the commensurate CDW ground state to a correlated metal in the metastable state. Moreover, the optically induced metastable state reveals a strong similarity to the current-induced one. This work provides an extensive characterization of metastable order in 1T-TaS 2 and proves how studying electronic properties under in-operando conditions is a critical step for next-generation devices.

Huber, Maximilian [Lawrence Berkeley National Labo↗

Reversible two-way tuning of thermal conductivity in an end-linked star-shaped thermoset

Polymeric thermal switches that can reversibly tune and significantly enhance their thermal conductivities are desirable for diverse applications in electronics, aerospace, automotives, and medicine; however, they are rarely achieved. Here, we report a polymer-based thermal switch consisting of an end-linked star-shaped thermoset with two independent thermal conductivity tuning mechanisms—strain and temperature modulation—that rapidly, reversibly, and cyclically modulate thermal conductivity. The end-linked star-shaped thermoset exhibits a strain-modulated thermal conductivity enhancement up to 11.5 at a fixed temperature of 60 °C (increasing from 0.15 to 2.1 W m –1 K –1 ). Additionally, it demonstrates a temperature-modulated thermal conductivity tuning ratio up to 2.3 at a fixed stretch of 2.5 (increasing from 0.17 to 0.39 W m –1 K –1 ). When combined, these two effects collectively enable the end-linked star-shaped thermoset to achieve a thermal conductivity tuning ratio up to 14.2. Moreover, the end-linked star-shaped thermoset demonstrates reversible tuning for over 1000 cycles. The reversible two-way tuning of thermal conductivity is attributed to the synergy of aligned amorphous chains, oriented crystalline domains, and increased crystallinity by elastically deforming the end-linked star-shaped thermoset.

42 ENGINEERING↗

Origin of large variations of current on/off ratio and switching voltage in atomically thin memristors: an exascale ab initio transport study

Nonvolatile resistive switching in two-dimensional monolayers opens a new avenue for high-density memory/computing devices. However, questions remain as to why the current on/off ratio and switching voltage vary significantly among different devices. Here, we simulate electronic transport of large systems consisting of a h-BN monolayer sandwiched by gold electrodes, enabled by an implementation of the nonequilibrium Green’s function method in the exascale density functional theory (DFT) code: Real-space MultiGrid. Systematic calculations reveal that the wide range of on/off ratios is due to variations in interface distances between the electrode and h-BN that significantly modulate their wavefunction overlap. In addition, DFT calculations demonstrate that the energy barrier of a gold atom dissociating from the electrode to h-BN increases dramatically with the interface distance, thereby explaining the strong dependence of the switching voltage on distance. Our work demonstrates the significance of interface distance in governing the current on/off ratio and switching voltage.

Electronic devices↗

Superconductivity from Domain Wall Fluctuations in Sliding Ferroelectrics

Bilayers of two-dimensional van der Waals materials that lack an inversion center can show a novel form of ferroelectricity, where certain stacking arrangements of the two layers lead to an interlayer polarization. Under an external out-of-plane electric field, a relative sliding between the two layers can occur, accompanied by an interlayer charge transfer and a ferroelectric switching. We show that the domain walls that mediate ferroelectric switching are a locus of strong attractive interactions between electrons. The attraction is mediated by the ferroelectric domain wall fluctuations, effectively driven by the soft interlayer shear phonon. We comment on the possible relevance of this attraction mechanism to the recent observation of an interplay between sliding ferroelectricity and superconductivity in bilayer T 𝑑 −MoTe 2 . We also discuss the possible role of this mechanism in the superconductivity of moiré bilayers.

Chaudhary, Gaurav [Univ. of Cambridge (United King↗

Cybersecurity Enhancement in Digital Substations: Hidden Markov Model-Based Smart Cyber Switching and Threat Response

The rising incidence of cyber-attacks on critical infrastructure and power grids poses significant threats to the stability and reliability of electrical substations, with potentially devastating consequences such as extended blackouts. This paper introduces an advanced cybersecurity framework aimed at safeguarding IEC 61850-based substations through the integration of software-defined networking (SDN) and digital twin (DT) technologies. The proposed DT-based framework employs smart cyber switching (SCS) for proactive threat mitigation and concurrent intelligent electronic device (CIED) for swift system restoration, thereby maintaining continuous operational integrity and robust cybersecurity defenses. Central to this framework is the adaptive port controller (APC), which enables dynamic port management to adapt to evolving threats, and an intrusion detection system (IDS) designed to detect and neutralize malicious attacks on IEC 61850-based sampled value (SV) and generic object-oriented substation event (GOOSE) messages within the substation’s communication network. Further, novel predictive intrusion detection and response (PIDR) algorithm is implemented on a digital substation (DS) to predict the best route to be taken by the attacker. The efficacy of these comprehensive cybersecurity frameworks is validated through rigorous simulations and a hardware-in-the-loop (HIL) testbed, showcasing the system’s ability to sustain substation operations amidst cyber-attacks.

Digital substation↗

Remote Power Distribution Prototyping for Bergoz ACCT

The objective of this project focuses on the design and construction of remote power distribution to the Bergoz ACCT amplifier module. Responsibilities included designing a prototype amplifier placeholder using SketchUp, 3D printing it using PrusaSlicer, and mounting the placeholder inside a junction box with 35 mm DIN rail. Wiring was run through a penetration in a wall inside the accelerator building to the Tevatron to keep all electronics outside the radioactive enclosure. A Power over Ethernet switch was set up for remote power distribution to the amplifier. This project ensures that the amplifier module can be effectively integrated and managed within Fermilab's infrastructure once it is procured.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Multiparametric AFM Insights into Electron Transport Mechanisms in Biomemristors

Biomemristors have attracted significant attention due to their applications in biodegradable and flexible electronic devices, and their prospective functions in information storage, neural synapses, and neuromorphic computation. Hence, understanding biomaterials' resistive switching (RS) mechanism is essential to design novel biomemristors with enhanced performance. In the last decade, various atomic force microscopy (AFM) modes, such as Kelvin probe force microscopy (KPFM) and conductive atomic force microscopy (cAFM), in situ/operando visualize the electron transport behaviors within biomemristors at the nanoscale. This review provides a comprehensive discussion of multiparametric AFM techniques to characterize biomemristors and inspire new ideas in developing next-generation consumer electronics. We also summarize the progress of revealing the internal mechanism of biomemristors with functional AFM to visualize and understand the switching behavior. Finally, the opportunities and challenges of further utilizing multiparametric AFM to explore the electron transport mechanisms in biomemristors are presented.

Shi, Chenyang↗

An RC snubber design method to achieve optimized switching noise‐loss trade‐off of cascode GaN HEMTs

Abstract The cascode gallium nitride high electron mobility transistors (GaN HEMTs) are very vulnerable to self‐sustained turn‐off oscillation due to their cascode configuration. This paper presents a design approach for the RC snubber of cascode GaN HEMTs to achieve the optimized noise‐loss trade‐off. At first, an analytical model is proposed to describe the instability of cascode GaN HEMTs‐based test circuits utilizing RC snubber. Based on the model, an analytical approach is proposed to achieve two optimum RC snubber designs S1 and S2. The design S1 can satisfactorily dampen the oscillation with minimum switching losses. The design S2 achieves maximum effective damping on the oscillation at a minimized cost of additional power losses. In the end, the accuracy of the proposed model is validated by the double‐pulse test and good agreement is obtained.

Xue, Peng↗

Revealing Parallel Inter‐ and Intra‐Ligand Charge Transfer Dynamics in [Ru(L) 2 (dppz)] 2+ Molecular Lightswitch with N K‐Edge X‐Ray Absorption Spectroscopy

In photoactive metal complexes the localization of photoexcited charges dictates the site of chemical reactivity, but few studies measure the charge redistribution in these systems with spatial precision. Herein, we track the inter- and intra-ligand charge transfer processes that underpin light-driven charge separation in the well-studied “molecular lightswitch” [Ru(bpy) 2 dppz] 2+ (aqueous [Ruthenium II (2,2′-bipyridine)2(dipyrido[3,2-a:2′,3′-c]phenazine)] 2+ [Cl − ] 2 ) by probing the electronic structure of ligand nitrogen atoms in real-time using ultrafast X-ray absorption spectroscopy and first principles calculations. We confirm the localization of excited electron density on the phenazine N atoms of dppz and we newly identify two parallel electron transfer pathways to populate this state. Sub-70 fs electron transfer to the phenazine portion of dppz is observed and attributed to intra-ligand electron transfer following Ru-to-dppz metal-to-ligand charge transfer (MLCT) excitation. This fast charge transfer was not reported in prior ultrafast studies. The slower (ca. 2 ps) charge transfer reported extensively in time-resolved optical absorption and emission studies is reassigned here to inter-ligand electron “hopping” between nearly isoenergetic ligand moieties following Ru-to-bpy MLCT excitation. In conclusion, the results demonstrate much faster charge separation than previously identified in this well-studied system, highlighting how extended azaacene ligand motifs promote the competitive charge transfer processes needed to drive light-driven electron transfer chemistry.

Donor-acceptor systems↗

Optical-Gating of Spin-based Quantum States (Final Report)

This project developed a generalizable strategy for optical control of spin-based quantum states through the Photoisomerization-Induced Spin–Charge Excited State (PISCES) process, in which a photochromic spirooxazine ligand bound to an electronically bistable metal complex enables reversible, room-temperature optical switching of spin states in both dilute matrices and the solid state. A multidisciplinary team integrated synthesis, spectroscopy, theory, and surface science to establish design principles for opto-spintronic quantum materials. Systematic structure–property studies across four spirooxazine series revealed that donor–π–acceptor interactions govern thermal isomerization, which proceeds via a rotational pathway. Pulsed EPR measurements demonstrated millisecond-scale coherence times in cobalt-dioxolene-spirooxazine complexes, establishing their promise as optically addressable molecular qubits; the approach was extended to Cu(II), Ni(II), and lanthanide complexes, including optical modulation of zero-field splittings and clock transitions. Two-dimensional IR spectroscopy resolved picosecond ground-state population exchange dynamics, while ab initio calculations elucidated photoisomerization mechanisms and parametrized Hamiltonians for spin relaxation and decoherence. Toward device integration, the team fabricated 2D polymer scaffolds for covalent qubit organization, developed tip-enhanced Raman imaging of molecular monolayers, and demonstrated optical gating of gate voltage in spirooxazine-graphene field-effect transistors. The project produced numerous publications, dissertations, and presentations, and trained over 30 researchers.

2D polymers↗

Moiré-driven topological electronic crystals in twisted graphene

In a dilute two-dimensional electron gas, Coulomb interactions can stabilize the formation of a Wigner crystal. Although Wigner crystals are topologically trivial, it has been predicted that electrons in a partially filled band can break continuous translational symmetry and time-reversal symmetry spontaneously, resulting in a type of topological electron crystal known as an anomalous Hall crystal. Here we report signatures of a generalized version of the anomalous Hall crystal in twisted bilayer–trilayer graphene, whose formation is driven by the moiré potential. The crystal forms at a band filling of one electron per four moiré unit cells (ν = 1/4) and quadruples the unit-cell area, coinciding with an integer quantum anomalous Hall effect. The Chern number of the state is exceptionally tunable, and it can be switched reversibly between +1 and −1 by electric and magnetic fields. Several other topological electronic crystals arise in a modest magnetic field, originating from ν = 1/3, 1/2, 2/3 and 3/2. As a result, the quantum geometry of the interaction-modified bands is likely to be very different from that of the original parent band, which enables possible future discoveries of correlation-driven topological phenomena.

Electronic properties and materials↗

Output Capacitance Loss of GaN HEMTs in Steady-State Switching

The output capacitance (C OSS ) loss, a loss produced when the device’s output capacitor is charged and discharged, has become a concern for GaN high electron mobility transistors (HEMTs) in high-frequency applications. This work presents a new, easy-to-implement method for the C OSS loss characterization based on the unclamped inductive switching (UIS) setup. As compared to prior approaches, this method involves the device’s ON-state conduction and could measure the C OSS loss in a single pulse and the steady-state switching. The C OSS loss of three types of mainstream commercial GaN HEMTs is characterized, which exhibit some common dependencies including a non-monotonic relation with the dv/dt (or resonance frequency), a linear relation with the ON-state current, a power-law relation with the peak blocking voltage, and little temperature dependence. In addition, their C OSS losses all show minimal distinctions in a single pulse and the steady-state switching, despite the increased on-resistance in the steady-state switching. Furthermore, this suggests that the traps accounting for the C OSS loss possess different de-trapping time constants as compared to the traps governing the dynamic on-resistance. Finally, a unified model is established to describe the C OSS loss of all three types of GaN HEMTs. These results provide important references for the high-frequency application of GaN HEMTs and new insights into the physical origin of their C OSS loss.1

42 ENGINEERING↗

Evaluating switch lifetime in soft-switched single-stage differential-mode SST

The reliability of semiconductor switches in single-stage differential-mode solid-state transformers (DM-SSTs) has not been systematically evaluated under soft-switching operation and realistic grid conditions. This paper presents a switch-level reliability analysis for soft-switched and hard-switched DM-SST configurations by integrating converter-specific power loss modeling with empirical lifetime prediction. Analytical derivation of device current profiles specific to the DM-SST is used to characterize electrothermal stress, which is then mapped to lifetime using degradation models obtained from power cycling tests (PCTs). Applied to realistic SST load profiles and grid voltage variations, this approach provides a probabilistic prediction of switch lifetime for the DM-SST. Lifetime estimates for both SiC MOSFETs and Si IGBTs are presented, offering insight into device degradation under converter operating conditions. The results quantify the reliability benefits of soft switching in single-stage SSTs, highlighting how switching dynamics influence long-term switch degradation.

14 SOLAR ENERGY↗

Gate control of electron correlations towards Mott field effect transistors (MottFET)

The modulation of channel conductance in field-effect transistors (FETs) via metal-insulator-semiconductor structures has revolutionized information processing and storage. However, the limitations of silicon-based FETs in electrical switching have driven the search for new materials capable of overcoming these constraints. Electrostatic gating of competing electronic phases in a Mott material near its metal-to-insulator transition (MIT) offers the prospects of substantial modulation of the conducting electrons and electrical resistivity through small changes in band filling. While electrostatic control of the MIT has been previously reported, the advancement of Mott materials toward novel Mott-based transistors, MottFETs requires the realization of their unique physical properties in a solid-state device. In this study, we present gate control of electron correlation using a solid-state device utilizing the oxide Mott system La 1-x Sr x VO 3 as a correlated FET channel. We report on a gate resistance response that cannot be explained in a purely electrostatic framework. This behavior suggests an enhancement in effective mass and a reduction in effective carrier density as the system approaches its insulating state, consistent with theoretical predictions for Mott systems, suggesting at least 100× charge gain originating from the correlated behavior. These preliminary results pave the way toward the development of highly efficient, low-power electronic devices that could surpass the performance bottlenecks of conventional FETs by leveraging the electronic phase transitions of correlated electron systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Integration of CeO 2 -Based Memristor with Vertically Aligned Nanocomposite Thin Film: Enabling Selective Conductive Filament Formation for High-Performance Electronic Synapses

The CeO 2 -based memristor has attracted significant attention due to its intrinsic resistive switching (RS) properties, large on/off ratio, and great plasticity, making it a promising candidate for artificial synapses. However, significant challenges such as high power consumption and poor device reliability hinder its broad application in neuromorphic microchips. To tackle these issues, in this work, we design a novel bilayer (BL) memristor by integrating a CeO 2 -based memristor with a Co-CeO 2 vertically aligned nanocomposite (VAN) layer and compare it with the single layer (SL) memristor. Preliminary electrical testing reveals that the BL memristor offers a reduced set/reset voltage (~67% lower), a higher on/off ratio (~5 × 10 2 ), enhanced device reliability, and improved device-to-device variation compared to the SL memristor. Insight from COMSOL simulation, coupled with microstructural analysis, provides a comprehensive elucidation on how the VAN layer facilitates the selective conductive filament (CF) formation. Subsequently, the plasticity of the BL memristor is evaluated through long-term potentiation/depression (LTP/LTD), paired-pulse facilitation (PPF), and spike-time-dependent plasticity (STDP). The spiking neural network (SNN) built upon the BL memristor achieves remarkable accuracy (~94%) after only 12 iterations, underscoring its potential for high-performance neural networks.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

The impact of pulse width modulation on heat accumulation in AlGaN channel HEMTs

The poor thermal properties of Aluminum–Gallium Nitride (AlGaN) channel High Electron Mobility Transistors (HEMTs) on sapphire limit the device’s maximum switching frequency due to high channel temperatures. Extracting the correct thermal time constants can provide guidelines for the device’s safe frequency operation. This study experimentally quantifies the impact of pulse width and duty cycle on the transient thermal dynamics of multi-finger AlGaN channel HEMTs. In most transient thermal metrology, lock-in averaging approaches are leveraged to increase signal-to-noise ratio and measure the device’s relative temperature rise. Assuming no heat accumulation, the temperature rise is used to quantify the device’s thermal resistance under continued pulsed biasing. For devices grown on sapphire substrates, however, heat accumulation leads to elevated reference temperatures and causes the differential measurement to underestimate the peak temperature. This study demonstrates the capability of transient Gate Resistance Thermometry (tGRT) to measure the absolute temperature, which is required to precisely evaluate the device’s thermal resistance. When an absolute temperature measurement is not feasible (such as thermoreflectance imaging), a solution is proposed to derive the peak temperature under pulsed biasing based on the differential temperature under pulsing and the steady-state thermal resistance (which is typically easier to obtain). Finally, additional tGRT (without averaging) is performed to demonstrate the temperature-dependent thermal time constants required to minimize heat accumulation effects.

Field effect transistors↗

From photosynthetic electron flow to gene regulation: redox signal transduction in cyanobacteria

In cyanobacteria, the free-living ancestors of chloroplasts, photosynthesis simultaneously sustains growth and generates reactive oxygen species (ROS) that damage proteins, lipids, and DNA when light capture outpaces carbon fixation. Maintaining redox balance, therefore, requires cells to read photosynthetic electron flow as a signal that continuously tunes gene expression and protein activity. This review traces how these redox signals are transduced to transcription machinery through three routes: membrane-localized sensors, cytoplasmic redox sensors downstream of photosystem I, and ROS generated when electron sinks are saturated. Membrane-bound histidine kinases (two-component systems) relay the redox state of the plastoquinone pool to control photosystem remodeling, pigment biosynthesis, and circadian timing. Cytoplasmic one-component regulators, by contrast, sense redox directly through thiol-disulfide switches, glutathionylation, iron-sulfur clusters, and metal-catalyzed oxidation to control photosystem-cofactor, electron-carrier, and transition-metal homeostasis. Because many of these regulators persist in algal and plant chloroplasts, cyanobacteria illuminate principles of redox control across photosynthetic eukaryotes. Post-transcriptional and translational control further shapes redox-dependent gene expression programs through transcript stability, ribosome assembly, and translation initiation, extending redox regulation beyond transcription to every step of protein synthesis and even activity modulation. Finally, we connect redox regulation to photosynthetic physiology, stress resilience, and the rational engineering of cyanobacteria for sustainable bioproduction.

59 BASIC BIOLOGICAL SCIENCES↗