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At least 73 records · Page 4

The GSFC 20 and 30 GHz millimeter wave propagation experiment

The Goddard Space Flight Center Millimeter Wave Experiment (MWE) aboard ATS-6, designed to evaluate the propagation characteristics of earth-space communications links at 20 and 30 GHz, is outlined, and the major results to date are presented. The 20 and 30 GHz transmitters operate through spot beam or continental coverage antenna systems. The transmitted signals consist of 9 tones spaced out to 1440 MHz. A communications link 6 GHz up and 20 or 30 GHz down is provided. Attenuation ratio measurements between the 20 and 30 GHz links indicate values higher than those predicted. Clear sky scintillations have been observed with spectral components up to about 50 Hz. Observations of rain depolarization indicate that attenuation effects predominate over depolarization effects in frequency re-use communications systems in the 20 GHz region. Various methods of predicting path attenuation are under investigation.

Ippolito, L. J.↗

Attenuation diversity measurements at 20 and 30 GHz

The results of data obtained at The University of Texas at Austin in conjunction with the ATS-6 millimeter wave experiment are presented. Attenuation measurements at 30 GHz and sky noise data at 20 GHz were obtained for 93 days simultaneously at each of two sites separated by 11 km and for 314 days at one site. The ratio of the loss at 30 GHz to that at 20 GHz due to rain varied from about 2 to about 4 with a median value of 2.65. This value was used to estimate 30 GHz losses for the 38.6% of time during attenuation events for which the satellite link was not available. Space diversity reduced outage time for a system in Austin, Texas, with a 10 db fade margin at 30 GHz from 3.8 hours to 4.1 minutes for the 93 days. Extrapolated to a yearly base this corresponds to 15 hours and to 16 minutes respectively. A plot of maximum observed cloud height against maximum hourly attenuation indicates that for a given attenuation level a lower limit is set for the maximum cloud height.

Vogel, W. J.↗

A 94/183 GHz aircraft radiometer system for Project Storm Fury

A radiometer design suitable for use in NASA's WB-57F aircraft to collect data from severe storm regions was developed. The design recommended was a 94/183 GHz scanning radiometer with 3 IF channels on either side of the 183.3 GHz water vapor line and a single IF channel for a low loss atmospheric window channel at 94 GHz. The development and construction of the 94/183 GHz scanning radiometer known as the Advanced Microwave Moisture Sounder (AMMS) is presented. The radiometer scans the scene below the aircraft over an angle of + or - 45 degrees with the beamwidth of the scene viewed of approximately 2 degrees at 94 GHz and 1 degree at 183 GHz. The AMMS data collection system consists of a microcomputer used to store the radiometer data on the flight cartridge recorder, operate the stepper motor driven scanner, and collect housekeeping data such as thermistor temperature readings and aircraft time code.

Gagliano, J. A.↗

The 2.2 GHz Surface Acoustic Wave (SAW) oscillator development Ku-band frequency source development

Two 2.2 GHz SAW oscillators using aluminum nitride on sapphire (AlN/Al2O3) delay lines were fabricated. The oscillators were electronically temperature compensated and characterized. One of the oscillators was used as the frequency reference for the Ku band source; the second oscillator is available for continued evaluation. A 15 GHz frequency source was designed and fabricated. The 15 GHz source consists of a Ku band FET oscillator which is phase locked to the frequency multiplied (X7) output of the 2.2 GHz SAW reference source. The Ku band source was built using microstrip circuit designs, which are hybrid compatible. Two wafer runs of 2.2 GHz TED devices were fabricated and evaluated. The devices were mounted on microstrip test substrates and evaluated as 15 GHz divide by 7 circuits. The device evaluation indicated that in their present form the TED is not a practical circuit element.

Source record↗

High resolution interferometric observations of the solar limb at 4.9 and 10.7 GHz during the solar eclipse of October, 1977

The radial intensity profile of the quiet solar limb has been measured at high spatial resolution using the VLA at 4.9 GHz and the Owens Valley solar interferometer at 10.7 GHz during the partial solar eclipse of October 12, 1977. The spatial resolution (13.8 arcsec at 4.9 GHz and 7.4 arcsec at 10.7 GHz) was provided primarily by the lunar limb. Substantial limb brightening at 4.9 GHz was found with a peak brightness temperature corresponding to an 80% increase over the disk value, and a possible small limb enhancement at 10.7 GHz. The results are consistent with a simple model consisting of a uniform disk (provided by a thoroughly roughened transition zone) overlaid by a corona in hydrostatic equilibrium with a density of 5 x 10 to the 8th at its base. The lack of the secant-like variation in the microwave intensity from center to limb is explained by a corona contained in loop structures rather than in spherically symmetric layers.

Marsh, K. A.↗

Performance of an airborne imaging 92/183 GHz radiometer during the Bering Sea Marginal Ice Zone Experiment (MIZEX-WEST)

An airborne imaging 92/183 GHz radiometer was recently flown onboard NASA's Convair 990 research aircraft during the February 1983 Bering Sea Marginal Ice Zone Experiment (MIZEX-WEST). The 92 GHz portion of the radiometer was used to gather ice signature data and to generate real-time millimeter wave images of the marginal ice zone. Dry atmospheric conditions in the Arctic resulted in good surface ice signature data for the 183 GHz double sideband (DSB) channel situated + or - 8.75 GHz away from the water vapor absorption line. The radiometer's beam scanner imaged the marginal ice zone over a + or - 45 degrees swath angle about the aircraft nadir position. The aircraft altitude was 30,000 feet (9.20 km) maximum and 3,000 feet (0.92 km) minimum during the various data runs. Calculations of the minimum detectable target (ice) size for the radiometer as a function of aircraft altitude were performed. In addition, the change in the atmospheric attenuation at 92 GHz under varying weather conditions was incorporated into the target size calculations. A radiometric image of surface ice at 92 GHz in the marginal ice zone is included.

Gagliano, J. A.↗

Aircraft microwave observations and simulations of deep convection from 18 to 183 GHz. I - Observations

Aircraft passive microwave observations of deep atmospheric convection at frequencies between 18 and 183 GHz are presented in conjunction with visible and infrared satellite and aircraft observations and ground-based radar observations. Deep convective cores are indicated in the microwave data by negative brightness temperature, T/(B) deviations from the land background (270 K) to extreme T(B) values below 100 K at 37, 92, and 183 GHz and below 200 K at 18 GHz. These T(B) minima, due to scattering by ice held aloft by the intense updrafts, are well correlated with areas of high radar reflectivity. For this land background case, T(B) is inversely correlated with rain rate at all frequencies due to T(B)-ice-rain correlations. Mean Delta-T between vertically polarized and horizontally polarized radiance in precipitation areas is approximately 6 K at both 18 GHz and 37 GHz, indicating nonspherical precipitation-size ice particles with a preferred horizontal orientation. Convective cores not observed in the visible and infrared data are clearly defined in the microwave observations, and borders of convective rain areas are well defined using the high-frequency (90 GHz and greater) microwave observations.

Adler, Robert F.↗

Relating SMMR 37 GHz polarization difference to precipitation and atmospheric carbon dioxide concentration - A reappraisal

The relations of Scanning Multi-channel Microwave Radiometer (SMMR) 37 GHz polarization difference to precipitation and atmospheric carbon dioxide (CO2) concentrations are reviewed. Annual precipitation data, a surrogate for green leaf vegetation density, are compared with the coincident SMMR 37 GHz polarization difference from arid and semi-arid West Africa for 1982-85. The SMMR 37 GHz polarization difference was found to be poorly correlated with precipitation in arid and semi-arid zones, contrary to previous reports. Coincident SMMR 37 GHz polarization difference and atmospheric CO2 concentration data from July 1981 to June 1983 are also reviewed. Previously suggested relations of the SMMR 37 GHz polarization difference to atmospheric CO2 concentrations were found to be heavily biased by winter conditions in the Northern Hemisphere. The use of the SMMR 37 GHz polarization difference for determining green leaf vegetation density, net primary production, atmospheric CO2 draw-down and related processes is questioned.

Tucker, C. J.↗

A low noise 665 GHz SIS quasi-particle waveguide receiver

Recent results on a 565-690 GHz SIS heterodyne receiver employing a 0.36 micron(sup 2) Nb/AlOx/Nb SIS tunnel junction with high quality circular non-contacting back short and E-plane tuners in a full height wave guide mount are reported. No resonant tuning structures were incorporated in the junction design at this time, even though such structures are expected to help the performance of the receiver. The receiver operates to at least the gap frequency of Niobium, approximately 680 GHz. Typical receiver noise temperatures from 565-690 GHz range from 160K to 230K with a best value of 185K DSB at 648 GHz. With the mixer cooled from 4.3K to 2K the measured receiver noise temperatures decreased by approximately 15 percent, giving roughly 180K DSB from 660 to 680 GHz. The receiver has a full 1 GHz IF pass band and was successfully installed at the Caltech Submillimeter Observatory in Hawaii.

Kooi, J. W.↗

A 90 GHz Amplifier Assembled Using a Bump-Bonded InP-Based HEMT

We report on the performance of a novel W-band amplifier fabricated utilizing very compact bump bonds. We bump-bonded a high-speed, low-noise InP high electron mobility transistor (HEMT) onto a separately fabricated passive circuit having a GaAs substrate. The compact bumps and small chip size were used for efficient coupling and maximum circuit design flexibility. This new quasi-monolithic millimeter-wave integrated circuit (Q-MMIC) amplifier exhibits a peak gain of 5.8 dB at approx. 90 GHz and a 3 dB bandwidth of greater than 25%. To our knowledge, this is the highest frequency amplifier assembled using bump-bonded technology. Our bump-bonding technique is a useful alternative to the high cost of monolithic millimeter-wave integrated circuits (MMIC's). Effects of the bumps on the circuit appear to be minimal. We used the simple matching circuit for demonstrating the technology - future circuits would have all of the elements (resistors, via holes, bias lines, etc.) included 'in conventional MMIC's. Our design in different from other investigators' efforts in that the bumps are only 8 microns thick by 15 microns wide. The bump sizes were sufficiently small that the devices, originally designed for W-band hybrid circuits, could be bonded without alteration. Figure 3 shows the measured and simulated magnitude of S-parameters from 85-120 GHz, of the InP HEMT bump-bonded to the low noise amplifier (LNA) passive. The maximum gain is 5.8 dB at approx. 90 GHz, and gain extends to 117 GHz. Measurement of a single device (without matching networks) shows approx. 1 dB of gain at 90 GHz. The measured gain of the amplifier agrees well with the design in the center of the measurement band, and the agreement falls off at the band edges. Since no accommodation for the bump-bonding parasitics was made in the design, the result implies that the parasitic elements associated with the bonding itself do not dominate the performance of the LNA circuit. It should be noted that this amplifier was designed for good noise performance, which is why the input and output return losses are poorer than one would expect for an amplifier simply matched for gain. However, noise performance has not been measured at this time. While the agreement between modeled vs. experimental data is not exact, the data prove that bump-bonded technology can be used for amplifiers at frequencies at least as high as 100 GHz. JPL is pursuing this technology as a way to economically and quickly incorporate the best available HEMTs into a circuit with all of the reliability and circuit design flexibility offered by MMIC technology. We are currently using the technology to fabricate 4-stage, wide-band, W-band LNA's. We have also performed pull and shear tests which show that the bump bonds are sufficiently robust for any anticipated application.

Pinsukanjana, Paul R.↗

Extending the ICRF to Higher Radio Frequencies: 24 and 43 GHz Astrometry

We present imaging results and source structure analysis of extragalactic radio sources observed using the Very Long Baseline Array (VLBA) at 24 GHz and 43 GHz as part of an ongoing NASA, USNO, NRAO and Bordeaux Observatory collaboration to extend the International Celestial Reference Frame (ICRF) to higher radio frequencies. The K/Q-band image database now includes images of 108 sources at 43 GHz (Q-band) and images of 230 sources at 24 GHz (K-band). Preliminary analysis of the observations taken to date shows that the sources are generally more compact as one goes from the ICRF frequency of 8.4 GHz to 24 GHz. This result is consistent with the standard theory of compact extragalactic radio sources and suggests that reference frames defined at these higher radio frequencies will be less susceptible to the effects of intrinsic source structure than those defined at lower frequencies.

Jacobs, Christopher S.↗

Traveling-Wave Maser for 32 GHz

The figure depicts a traveling-wave ruby maser that has been designed (though not yet implemented in hardware) to serve as a low-noise amplifier for reception of weak radio signals in the frequency band of 31.8 to 32.3 GHz. The design offers significant improvements over previous designs of 32-GHz traveling-wave masers. In addition, relative to prior designs of 32-GHz amplifiers based on high-electron-mobility transistors, this design affords higher immunity to radio-frequency interference and lower equivalent input noise temperature. In addition to the basic frequency-band and low-noise requirements, the initial design problem included a requirement for capability of operation in a closed-cycle helium refrigerator at a temperature .4 K and a requirement that the design be mechanically simplified, relative to prior designs, in order to minimize the cost of fabrication and assembly. Previous attempts to build 32- GHz traveling-wave masers involved the use of metallic slow-wave structures comprising coupled transverse electromagnetic (TEM)-mode resonators that were subject to very tight tolerances and, hence, were expensive to fabricate and assemble. Impedance matching for coupling signals into and out of these earlier masers was very difficult. A key feature of the design is a slow-wave structure, the metallic portions of which would be mechanically relatively simple in that, unlike in prior slow-wave structures, there would be no internal metal steps, irises, or posts. The metallic portions of the slow-wave structure would consist only of two rectangular metal waveguide arms. The arms would contain sections filled with the active material (ruby) alternating with evanescent-wave sections. This structure would be transparent in both the signal-frequency band (the aforementioned range of 31.8 to 32.3 GHz) and the pump-frequency band (65.75 to 66.75 GHz), and would impose large slowing factors in both frequency bands. Resonant ferrite isolators would be placed in the evanescent-wave sections to provide reverse loss needed to suppress reverse propagation of power at the signal frequency. This design is expected to afford a large gain-bandwidth product at the signal frequency and efficient coupling of the pump power into the paramagnetic spin resonances of the ruby sections. The more efficiently the pump power could be thus coupled, the more efficiently it could be utilized and the heat load on the refrigerator correspondingly reduced.

Shell, James↗

Three MMIC Amplifiers for the 120-to-200 GHz Frequency Band

Closely following the development reported in the immediately preceding article, three new monolithic microwave integrated circuit (MMIC) amplifiers that would operate in the 120-to-200-GHz frequency band have been designed and are under construction at this writing. The active devices in these amplifiers are InP high-electron-mobility transistors (HEMTs). These amplifiers (see figure) are denoted the LSLNA150, the LSA200, and the LSA185, respectively. Like the amplifiers reported in the immediately preceding article, the LSLNA150 (1) is intended to be a prototype of low-noise amplifiers (LNAs) to be incorporated into spaceborne instruments for sensing cosmic microwave background radiation and (2) has potential for terrestrial use in electronic test equipment, passive millimeter-wave imaging systems, radar receivers, communication receivers, and systems for detecting hidden weapons. The HEMTs in this amplifier were fabricated according to 0.08- m design rules of a commercial product line of InP HEMT MMICs at HRL Laboratories, LLC, with a gate geometry of 2 fingers, each 15 m wide. On the basis of computational simulations, this amplifier is designed to afford at least 15 dB of gain, with a noise figure of no more than about 6 dB, at frequencies from 120 to 160 GHz. The measured results of the amplifier are shown next to the chip photo, with a gain of 16 dB at 150 GHz. Noise figure work is ongoing. The LSA200 and the LSA185 are intended to be prototypes of transmitting power amplifiers for use at frequencies between about 180 and about 200 GHz. These amplifiers have also been fabricated according to rules of the aforesaid commercial product line of InP HEMT MMICs, except that the HEMTs in these amplifiers are characterized by a gate geometry of 4 fingers, each 37 m wide. The measured peak performance of the LSA200 is characterized by a gain of about 1.4 dB at a frequency of 190 GHz; the measured peak performance of the LSA185 is characterized by a gain of about 2.7 dB at a frequency of 181 GHz. The measured gain results of each chip are shown next to their respective photos.

Samoska, Lorene↗

Power-Amplifier Module for 145 to 165 GHz

A power-amplifier module that operates in the frequency range of 145 to 165 GHz has been designed and constructed as a combination of (1) a previously developed monolithic microwave integrated circuit (MMIC) power amplifier and (2) a waveguide module. The amplifier chip was needed for driving a high-electron-mobility-transistor (HEMT) frequency doubler. While it was feasible to connect the amplifier and frequency-doubler chips by use of wire bonds, it was found to be much more convenient to test the amplifier and doubler chips separately. To facilitate separate testing, it was decided to package the amplifier and doubler chips in separate waveguide modules. Figure 1 shows the resulting amplifier module. The amplifier chip was described in "MMIC HEMT Power Amplifier for 140 to 170 GHz" (NPO-30127), NASA Tech Briefs, Vol. 27, No. 11, (November 2003), page 49. To recapitulate: This is a three-stage MMIC power amplifier that utilizes HEMTs as gain elements. The amplifier was originally designed to operate in the frequency range of 140 to 170 GHz. The waveguide module is based on a previously developed lower frequency module, redesigned to support operation in the frequency range of 140 to 220 GHz. Figure 2 presents results of one of several tests of the amplifier module - measurements of output power and gain as functions of input power at an output frequency of 150 GHz. Such an amplifier module has many applications to test equipment for power sources above 100 GHz.

Samoska, Lorene↗

MMIC DHBT Common-Base Amplifier for 172 GHz

Figure 1 shows a single-stage monolithic microwave integrated circuit (MMIC) power amplifier in which the gain element is a double-heterojunction bipolar transistor (DHBT) connected in common-base configuration. This amplifier, which has been demonstrated to function well at a frequency of 172 GHz, is part of a continuing effort to develop compact, efficient amplifiers for scientific instrumentation, wide-band communication systems, and radar systems that will operate at frequencies up to and beyond 180 GHz. The transistor is fabricated from a layered structure formed by molecular beam epitaxy in the InP/InGaAs material system. A highly doped InGaAs base layer and a collector layer are fabricated from the layered structure in a triple mesa process. The transistor includes two separate emitter fingers, each having dimensions of 0.8 by 12 m. The common-base configuration was chosen for its high maximum stable gain in the frequency band of interest. The input-matching network is designed for high bandwidth. The output of the transistor is matched to a load line for maximum saturated output power under large-signal conditions, rather than being matched for maximum gain under small-signal conditions. In a test at a frequency of 172 GHz, the amplifier was found to generate an output power of 7.5 mW, with approximately 5 dB of large-signal gain (see Figure 2). Moreover, the amplifier exhibited a peak small-signal gain of 7 dB at a frequency of 176 GHz. This performance of this MMIC single-stage amplifier containing only a single transistor represents a significant advance in the state of the art, in that it rivals the 170-GHz performance of a prior MMIC three-stage, four-transistor amplifier. [The prior amplifier was reported in "MMIC HEMT Power Amplifier for 140 to 170 GHz" (NPO-30127), NASA Tech Briefs, Vol. 27, No. 11 (November 2003), page 49.] This amplifier is the first heterojunction- bipolar-transistor (HBT) amplifier built for medium power operation in this frequency band. The performance of the amplifier as measured in the aforementioned tests suggests that InP/InGaAs HBTs may be superior to high-electron-mobility (HEMT) transistors in that the HBTs may offer more gain per stage and more output power per transistor.

Paidi, Vamsi↗

Miniature MMIC Low Mass/Power Radiometer Modules for the 180 GHz GeoSTAR Array

We have developed and demonstrated miniature 180 GHz Monolithic Microwave Integrated Circuit (MMIC) radiometer modules that have low noise temperature, low mass and low power consumption. These modules will enable the Geostationary Synthetic Thinned Aperture Radiometer (GeoSTAR) of the Precipitation and All-weather Temperature and Humidity (PATH) Mission for atmospheric temperature and humidity profiling. The GeoSTAR instrument has an array of hundreds of receivers. Technology that was developed included Indium Phosphide (InP) MMIC Low Noise Amplifiers (LNAs) and second harmonic MMIC mixers and I-Q mixers, surface mount Multi-Chip Module (MCM) packages at 180 GHz, and interferometric array at 180 GHz. A complete MMIC chip set for the 180 GHz receiver modules (LNAs and I-Q Second harmonic mixer) was developed. The MMIC LNAs had more than 50% lower noise temperature (NT=300K) than previous state-of-art and MMIC I-Q mixers demonstrated low LO power (3 dBm). Two lots of MMIC wafers were processed with very high DC transconductance of up to 2800 mS/mm for the 35 nm gate length devices. Based on these MMICs a 180 GHz Multichip Module was developed that had a factor of 100 lower mass/volume (16x18x4.5 mm3, 3g) than previous generation 180 GHz receivers.

Monolithic Microwave Integrated Circuit (MMIC)↗

80-GHz MMIC HEMT Voltage-Controlled Oscillator

A voltage-controlled oscillator (VCO) that operates in the frequency range from 77.5 to 83.5 GHz has been constructed in the form of a monolithic microwave integrated circuit (MMIC) that includes high-electron-mobility transistors (HEMTs). This circuit is a prototype of electronically tunable signal sources in the 75-to-110-GHz range, needed for communication, imaging, and automotive radar applications, among others. This oscillator (see Figure 1) includes two AlInAs/GaInAs/InP HEMTs. One HEMT serves mainly as an oscillator gain element. The other HEMT serves mainly as a varactor for controlling the frequency: the frequency-control element is its gate-to-source capacitance, which is varied by changing its gate supply voltage. The gain HEMT is biased for class-A operation (meaning that current is conducted throughout the oscillation cycle). Grounded coplanar waveguides are used as impedance-matching transmission lines, the input and output matching being chosen to sustain oscillation and maximize output power. Air bridges are placed at discontinuities to suppress undesired slot electromagnetic modes. A high density of vias is necessary for suppressing a parallel-plate electromagnetic mode that is undesired because it can propagate energy into the MMIC substrate. Previous attempts at constructing HEMT-based oscillators yielded circuits with relatively low levels of output power and narrow tuning ranges. For example, one HEMT VCO reported in the literature had an output power of 7 dBm (.5 mW) and a tuning range 2-GHz wide centered approximately at a nominal frequency of 77 GHz. In contrast, as shown in Figure 2, the present MMIC HEMT VCO puts out a power of 12.5 dBm (.18 mW) or more over the 6-GHz-wide frequency range from 77.5 to 83.5 GHz

Samoska, Lorene↗

164-GHz MMIC HEMT Frequency Doubler

A monolithic microwave integrated circuit (MMIC) that includes a high-electron-mobility transistor (HEMT) has been developed as a prototype of improved frequency doublers for generating signals at frequencies greater than 100 GHz. Signal sources that operate in this frequency range are needed for a variety of applications, notably including general radiometry and, more specifically, radiometric remote sensing of the atmosphere. Heretofore, it has been common practice to use passive (diode-based) frequency multipliers to obtain frequencies greater than 100 GHz. Unfortunately, diode-based frequency multipliers are plagued by high DC power consumption and low conversion efficiency. Moreover, multiplier diodes are not easily integrated with such other multiplier-circuit components as amplifiers and oscillators. The goals of developing the present MMIC HEMT frequency doubler were (1) to utilize the HEMT as an amplifier to increase conversion efficiency (more precisely, to reduce conversion loss), thereby increasing the output power for a given DC power consumption or, equivalently, reducing the DC power consumption for a given output power; and (2) to provide for the integration of amplifier and oscillator components on the same chip. The MMIC frequency doubler (see Figure 1) contains an AlInAs/GaInAs/InP HEMT biased at pinch-off to make it function as a class-B amplifier (meaning that it conducts in half-cycle pulses). Grounded coplanar waveguides (GCPWs) are used as impedance-matching transmission lines. Air bridges are placed at discontinuities to suppress undesired slot electromagnetic modes. Another combination of GCPWs also serves both as a low-pass filter to suppress undesired oscillations at frequencies below 60 GHz and as a DC blocker. Large decoupling capacitors and epitaxial resistors are added in the drain and gate lines to suppress bias oscillations. At the output terminal, the fundamental frequency is suppressed by a quarter-wave open stub, which presents a short circuit at the fundamental frequency and an open circuit at the second harmonic. At an input power of 7 mW, the output power and conversion loss at an output frequency of 164 GHz were found to be 5 dBm (approximately equal to 3.2 mW) and 2 dB, respectively, with a 3-dB output-power bandwidth of 14 GHz. This is the best performance reported to date for an MMIC HEMT frequency doubler above 100 GHz.

Samoska, Lorene↗