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Results for “HEMT”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS2008

Channel Temperature Determination for AlGaN/GaN HEMTs on SiC and Sapphire

Numerical simulation results (with emphasis on channel temperature) for a single gate AlGaN/GaN High Electron Mobility Transistor (HEMT) with either a sapphire or SiC substrate are presented. The static I-V characteristics, with concomitant channel temperatures (T(sub ch)) are calculated using the software package ATLAS, from Silvaco, Inc. An in-depth study of analytical (and previous numerical) methods for the determination of T(sub ch) in both single and multiple gate devices is also included. We develop a method for calculating T(sub ch) for the single gate device with the temperature dependence of the thermal conductivity of all material layers included. We also present a new method for determining the temperature on each gate in a multi-gate array. These models are compared with experimental results, and show good agreement. We demonstrate that one may obtain the channel temperature within an accuracy of +/-10 C in some cases. Comparisons between different approaches are given to show the limits, sensitivities, and needed approximations, for reasonable agreement with measurements.

Freeman, Jon C.↗
NASA NTRS2008

Compact, Single-Stage MMIC InP HEMT Amplifier

A monolithic micro - wave integrated-circuit (MMIC) singlestage amplifier containing an InP-based high-electron-mobility transistor (HEMT) plus coplanar-waveguide (CPW) transmission lines for impedance matching and input and output coupling, all in a highly miniaturized layout as needed for high performance at operating frequencies of hundreds of gigahertz is described.

Pukala, David↗
NASA NTRS2019

A 220-GHz InP HEMT Direct Detection Polarimeter

In this article, a 220-GHz direct detection polarimetric receiver is reported. This polarimetric receiver is intended for sensing of the microphysical properties of cloud ice in the earth's upper atmosphere. In the article, we report the measured RF performance, including RF gain of approximately 35 dB per channel and integrated noise figure of the receiver. The noise figure is measured to be 5.1 dB for the horizontally polarized channel and 5.4 dB for the vertically polarized channel. The receiver measures only 1.8 cm × 3.0 cm × 6.4 cm and has a total regulated dc power consumption of 520 mW. This article represents the first 220-GHz polarimetric direct detection receiver and is enabled by an advanced 25-nm indium phosphide (InP) HEMT monolithic microwave integrated circuit (MMIC) technology.

Indium phosphide (InP)↗
NASA NTRSDate not supplied

Demonstration of GaN HEMT MMIC High-Power Amplifier for Lunar Proximity Communications

In this paper, we demonstrate a Ka-band high power, high efficiency, GaN HEMT MMIC based power amplifier for communications from the lunar orbit to lunar surface. The measured results include Pout, Gain, PAE, RMS EVM for Offset-QPSK, 8PSK, 16APSK, and 32APSK waveforms, 3rd-order IMD products, noise figure, and phase noise.

Ka-band↗
NASA NTRS2024

Demonstration of GaN HEMT MMIC High-Power Amplifier for Lunar Proximity Communications

In this paper, we demonstrate a high efficiency, Ka-band (23.15 to 23.55 GHz) GaN HEMT MMIC based single-ended high power amplifier (HPA). The measured Pout, Gain, PAE, RMS EVM for Offset-QPSK, 8PSK, 16APSK, and 32APSK waveforms, 3rd-order IMD products, noise figure, and phase noise are presented. The results indicate that the saturated output power (P sat ) and the small signal Gain are on the order of 38.8 dBm (7.6 W) and 29.3 dB, respectively. The PAE at Psat is 20.0%. At the 1-dB compression point, the RMS EVM and the out-of-band spectral regrowth are less than 6% and –26 dBc respectively, for all four waveforms. Additionally, the spectrum is in compliance with the NTIA mask requirements for all four waveforms. The output 3rd-order intercept point (OIP3) is on the order of 42 dBm. The noise figure is less than 9.5 dB. The SSB phase noise spectral density is compliant with the envelope defined by the MIL-STD-188-164C. The HPA can enable proximity forward links between the orbiting Gateway/relay satellites and the lunar surface elements and cross links between relay satellites.

Ka-band↗
NASA NTRS2003

MMIC HEMT radiometry

Explore the source record for details and available documents.

MMIC HEMT radiometry↗
NASA NTRSDate not supplied

Amplifier Output Power, Gain, Efficiency, and Bandwidth: A Comparative Study of GaN HEMT MMIC Multi-Stage Power Amplifiers versus Distributed Power Amplifiers

In this paper we present first, the results of a study conducted to investigate the microwave performance of a wideband (25-31 GHz) GaN MMIC distributed high power amplifier (HPA). Second, we compare and contrast the above performance with that of an alternate architecture that relies on two HPAs to provide contiguous 25-31 GHz coverage. The two HPAs operate across 25-28 GHz and 27-31 GHz, respectively, and can be switched in and out depending on the need at any given time. The parameters investigated includes the output power, gain, power added efficiency, bandwidth, RMS error vector magnitude for offset-QPSK, 8PSK, 16APSK, and 32 APSK waveforms, 3rd-order intermodulation distortion products, noise figure, and single sideband phase noise.

MMIC↗
NASA NTRS1988

Microwave response of an HEMT photoconductor

Interdigitated photodetectors of various geometries have been fabricated on GaAlAs/GaAs heterostructure material. Optical response characteristics of these devices have been examined at both dc and microwave frequencies. The microwave response, at frequencies to 8 GHz, was studied by illuminating the devices with the output of an internally modulated GaAlAs diode laser. Results of these measurements are presented and compared with that of GaAs photoconductors.

Claspy, P. C.↗
NASA NTRS1988

Microwave response of an HEMT photoconductor

Interdigitated photodetectors of various geometries have been fabricated on GaAlAs/GaAs heterostructure material. Optical response characteristics of these devices have been examined at both dc and microwave frequencies. The microwave response, at frequencies to 8 GHz, was studied by illuminating the devices with the output of an internally modulated GaAlGa diode laser. Results of these measurements are presented and compared with that of GaAs photoconductors.

Claspy, P. C.↗
NASA NTRS1992

V-band pseudomorphic HEMT MMIC phased array components for space communications

Recent advances in pseudomorphic high-electron-mobility transistor (PMHEMT) monolithic microwave integrated circuit (MMIC) technology have made it the preferred candidate for high performance millimeter-wave components for phased array applications. The development of V-band PMHEMT/MMIC components including power amplifiers and phase shifters is described. For the single-stage MMIC power amplifier employing a 200 micron PMHEMT, we achieved 151.4 mW output power (757.0 mW/mm) with 1.8 dB associated gain and 26.4 percent power-added efficiency at 60 GHz. A two-stage MMIC amplifier utilizing the same devices demonstrated small-signal gain as high as 15 dB at 58 GHz. And, for the phase shifter, a four-bit phase shifter with less than 8 dB insertion loss from 61 to 63 GHz was measured.

Lan, G. L.↗