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At least 73 records · Page 4

Segregation Coefficients of Impurities in Selenium by Zone Refining

The purification of Se by zone refining process was studied. The impurity solute levels along the length of a zone-refined Se sample were measured by spark source mass spectrographic analysis. By comparing the experimental concentration levels with theoretical curves the segregation coefficient, defined as the ratio of equilibrium concentration of a given solute in the solid to that in the liquid, k = x(sub s)/x(sub l) for most of the impurities in Se are found to be close to unity, i.e., between 0.85 and 1.15, with the k value for Si, Zn, Fe, Na and Al greater than 1 and that for S, Cl, Ca, P, As, Mn and Cr less than 1. This implies that a large number of passes is needed for the successful implementation of zone refining in the purification of Se.

Su, Ching-Hua↗

Tunneling effects in the current-voltage characteristics of high-efficiency GaAs solar cells

Evidence is that tunneling via states in the forbidden gap is the dominant source of excess current in the dark current-voltage (I-V) characteristics of high-efficiency DMCVD grown Al(x)Ga(1-x)As/GaAs(x is equal to or greater than 0.85) solar cells. The dark forward and reverse I-V measurements were made on several solar cells, for the first time, at temperatures between 193 and 301 K. Low-voltage reverse-bias I-V data of a number of cells give a thermal activation energy for excess current of 0.026 + or - 0.005 eV, which corresponds to the carbon impurity in GaAs. However, other energy levels between 0.02 eV and 0.04 eV were observed in some cells which may correspond to impurity levels introduced by Cu, Si, Ge, or Cd. The forward-bias excess current is mainly due to carrier tunneling between localized levels created in the space-charge layer by impurities such as carbon, which are incorporated during the solar cell growth process. A model is suggested to explain the results.

Kachare, R.↗

High-purity silicon for solar cell applications

The article discusses the production of solar cells from high-purity silicon. The process consists of reducing the level of impurities in the raw materials, preventing material contamination before and after entering the furnace, and performing orders-of-magnitude reduction of metal impurity concentrations. The high-purity raw materials are considered with reference to carbon reductants, silica, and graphite electrodes. Attention is also given to smelting experiments used to demonstrate, in an experimental-scale furnace, the production of high-purity SoG-Si. It is found that high-purity silicon may be produced from high-purity quartz and chemically purified charcoal in a 50-kVA arc furnace. The major contamination source is shown to be impurities from the carbon reducing materials.

Dosaj, V. D.↗

Development and evaluation of die materials for use in the growth of silicon ribbons by the inverted ribbon growth process, task 2. LSSA project

The results of emission spectroscopic analysis indicate that molten silicon can remain in contact with hot-pressed Si3N4 (99.2 percent theoretical density) for prolonged periods without attaining the impurity content level of the nitride. Although MgO was used as binder, Mg was not found present in the silicon sessile drop in quantities much above the level initially present in the silicon source material. Preliminary experiments with EFG-type dies coated with CVD Si3N4 or CVD SiOxNy indicate that capillary rise does not occur readily in these dies. The same was found to be true of hot-pressed and reaction-sintered Si3N4 obtained commercially. However, when dies were formed by depositing CVD layers on shaped silicon slabs, a column of molten silicon was maintained in each CVD die while being heated in contact with a crucible of molten silicon. Preliminary wetting of dies appears necessary for EFG growth. Several ribbon growth experiments were performed from V-shaped dies.

Duffy, M. T.↗

Pellet Feed for Dendritic-Web Growth

Melt replenishment system sustains continuous growth of silicon dentritic web for several days. Substantially increases size of batch, limited mainly by level of impurities and life of crucible. Silicon pellets automatically added to crucible sustain crystal growth for days.

Duncan, C. S.↗

Nitridation of silicon

Silicon powders with three levels of impurities, principally Fe, were sintered in He or H2. Non-densifying mechanisms of material transport were dominant in all cases. High purity Si showed coarsening in He while particle growth was suppressed in H2. Lower purity powder coarsened in both He and H2. The same three Si powders and Si /111/ single crystal wafers were nitrided in both N2 and N2/H2 atmospheres. Hydrogen increased the degree of nitridation of all three powders and the alpha/beta ratio of the lower purity powder. Some Si3N4 whiskers and open channels through the surface nitride layer were observed in the presence of Fe, correlating with the nitridation-enhancing effects of Fe. Thermodynamic calculations showed that when SiO2 is present on the Si, addition of H2 to the nitriding atmosphere decreases the amount of SiO2 and increases the partial pressure of Si-containing vapor species, that is, Si and SiO. Large amounts of NH3 and SiH4 were also predicted to form.

Shaw, N. J.↗

Development of a proton-exchange membrane electrochemical reclaimed water post-treatment system

A single-cell electrochemical reactor that utilizes a proton exchange membrane (PEM) as a solid electrolyte is being investigated for posttreatment of reclaimed waste waters with low or negligible electrolyte content. Posttreatment is a final 'polishing' of reclaimed waste waters prior to reuse, and involves removing organic impurities at levels as high as 100 ppm to below 500 ppb total organic carbon (TOC) content to provide disinfection. The system does not utilize or produce either expendable hardware components or chemicals and has no moving parts. Test data and kinetic analysis are presented. The feasibility and application for water reclamation processes in controlled ecological environments (e.g., lunar/Mars habitats) are also presented. Test results show that the electrochemical single cell reactor provides effective posttreatment.

Kaba, Lamine↗

Statistically Reliable 'Atomistic' Simulation of Sub 100 nm MOSFETs

A 3D 'atomistic' simulation technique to study random impurity induced threshold voltage lowering and fluctuations in sub 0. 1 micron MOSFETs is presented. It allows statistical analysis of random impurity effects down to the individual impurity level-Efficient algorithms based on a single solution of Poisson's equation, followed by the solution of a simplified current continuity equation are used in the simulations.

Asenov, Asen↗

Emerging Fuel Cell Technology Being Developed: Offers Many Benefits to Air Vehicles

Fuel cells, which have recently received considerable attention for terrestrial applications ranging from automobiles to stationary power generation, may enable new aerospace missions as well as offer fuel savings, quiet operations, and reduced emissions for current and future aircraft. NASA has extensive experience with fuel cells, having used them on manned space flight systems over four decades. Consequently, the NASA Glenn Research Center has initiated an effort to investigate and develop fuel cell technologies for multiple aerospace applications. Two promising fuel cell types are the proton exchange membrane (PEM) and solid oxide fuel cell (SOFC). PEM technology, first used on the Gemini spacecraft in the sixties, remained unutilized thereafter until the automotive industry recently recognized the potential. PEM fuel cells are low-temperature devices offering quick startup time but requiring relatively pure hydrogen fuel. In contrast, SOFCs operate at high temperatures and tolerate higher levels of impurities. This flexibility allows SOFCs to use hydrocarbon fuels, which is an important factor considering our current liquid petroleum infrastructure. However, depending on the specific application, either PEM or SOFC can be attractive. As only NASA can, the Agency is pursuing fuel cell technology for civil uninhabited aerial vehicles (UAVs) because it offers enhanced scientific capabilities, including enabling highaltitude, long-endurance missions. The NASA Helios aircraft demonstrated altitudes approaching 100,000 ft using solar power in 2001, and future plans include the development of a regenerative PEM fuel cell to provide nighttime power. Unique to NASA's mission, the high-altitude aircraft application requires the PEM fuel cell to operate on pure oxygen, instead of the air typical of terrestrial applications.

Walker, James F.↗

Effects of positive ion implantation into antireflection coating of silicon solar cells

The state of technological development of Si solar cells for highest obtained efficiency and radiation resistance is summarized. The various theoretical analyses of Si solar cells are reviewed. It is shown that factors controlling blue response are carrier diffusion length, surface recombination, impurity concentration profile in surface region, high level of surface impurity concentration (degeneracy), reflection coefficient of oxide, and absorption coefficient of Si. The theory of ion implantation of charge into the oxide antireflection coating is developed and side effects are discussed. The experimental investigations were directed at determining whether the blue response of Si solar cells could be improved by phosphorus ion charges introduced into the oxide antireflection coating.

Middleton, A. E.↗

Methods for Anticipating Problems with Electrical Wiring

Passive and active methods for anticipating problems with electrical wiring are provided. An insulative material in contact with an electrical conductor has at least one impurity that is impregnated in the insulative material and/or disposed thereon. An environment around the electrical conductor is monitored for the presence or the level of the impurity(ies) emanating from the insulative material in the form of a gaseous effluent. An alarm signal is generated when a predetermined level of the gaseous effluent is detected.

William T Yost↗

The effect of secondary impurities on solar cell performance

Czochralski and float zone sigle crystals of silicon were doped with the primary impurities B or P so that a resistivity of 0.5 ohm cm resulted, and in addition doped with certain secondary impurities including Al, C, Cr, Cu, Fe, Mg, Mn, Na, Ni, O, Ti, V, and Zr. The actual presence of these impurities was confirmed by analysis of the crystals. Solar cell performance was evaluated and found to be degraded most significantly by Ti, V, and Zr and to some extent by most of the secondary impurities considered. These results are of significance to the low cost silicon program, since any such process would have to yield at least tolerable levels of these impurities.

Hill, D. E.↗

Effect of impurities and processing on silicon solar cells. Volume 1: Characterization methods for impurities in silicon and impurity effects data base

Two major topics are treated: methods to measure and evaluate impurity effects in silicon and comprehensive tabulations of data derived during the study. Discussions of deep level spectroscopy, detailed dark I-V measurements, recombination lifetime determination, scanned laser photo-response, conventional solar cell I-V techniques, and descriptions of silicon chemical analysis are presented and discussed. The tabulated data include lists of impurity segregation coefficients, ingot impurity analyses and estimated concentrations, typical deep level impurity spectra, photoconductive and open circuit decay lifetimes for individual metal-doped ingots, and a complete tabulation of the cell I-V characteristics of nearly 200 ingots.

Hopkins, R. H.↗

The Effect of Hydrogen Annealing on the Impurity Content of Alumina-Forming Alloys

Previously, the effect of hydrogen annealing on increasing the adhesion of Al2O3 scales had been related to the effective desulfurization that occurred during this process. The simultaneous reduction of other impurities has now been re-examined for up to 20 impurity elements in the case of five different alloys (NiCrAl, FeCrAl, PWA 1480, Rene'142, and Rene'N5). Hydrogen annealing produced measurable reductions in elemental concentration for B, C, Na, Mg, P, K, Sr, or Sn in varying degrees for at least one and up to three of these alloys. No single element was reduced by hydrogen annealing for all the alloys except sulfur. In many cases spalling occurred at low levels of these other impurities, while in other cases the scales were adherent at high levels of the impurities. No impurity besides sulfur was strongly correlated with adhesion.

Smialek, James L.↗

Impurities in silicon solar cells

Metallic impurities, both singly and in combinations, affect the performance of silicon solar cells. Czochralski silicon web crystals were grown with controlled additions of secondary impurities. The primary electrical dopants were boron and phosphorus. The silicon test ingots were grown under controlled and carefully monitored conditions from high-purity charge and dopant material to minimize unintentional contamination. Following growth, each crystal was characterized by chemical, microstructural, electrical, and solar cell tests to provide a detailed and internally consistent description of the relationships between silicon impurity concentration and solar cell performance. Deep-level spectroscopy measurements were used to measure impurity concentrations at levels below the detectability of other techniques and to study thermally-induced changes in impurity activity. For the majority of contaminants, impurity-induced performance loss is due to a reduction of the base diffusion length. From these observations, a semi-empirical model which predicts cell performance as a function of metal impurity concentration was formulated. The model was then used successfully to predict the behavior of solar cells bearing as many as 11 different impurities.

Hopkins, R. H.↗

Hydrogen environment embrittlement of metals

Hydrogen environment embrittlement refers to metals stressed while exposed to a hydrogen atmosphere. Tested in air, even after exposure to hydrogen under pressure, this effect is not observed on similar specimens. Much high purity hydrogen is prepared by evaporation of liquid hydrogen, and thus has low levels for potential impurities which could otherwise inhibit or poison the absorbent reactions that are involved. High strength steels and nickel-base allows are rated as showing extreme embrittlement; aluminum alloys and the austenitic stainless steels, as well as copper, have negligible susceptibility to this phenomenon. The cracking that occurs appears to be a surface phenomenon, is unlike that of internal hydrogen embrittlement.

Jewett, R. P.↗