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DOE OSTI2026

Buried Interfaces in Organic Photocathodes for H 2 Evolution: Fermi-Level Pinning and Recombination

Herein, we demonstrate how Fermi-level pinning at buried contacts impacts solar fuel generation in all-polymer photocathodes by systematically comparing the effects of work function, hydroxyl coverage, and hydrogen evolution using chemically modified indium tin oxide (ITO) supports. Photovoltages and net photocathode performance are improved when the ITO is passivated using phosphonic acids, independent of work function, suggesting that the passivation reduces Fermi-level pinning at the buried interface arising from blended heterojunction interactions with surface metal hydroxyls. Transient photovoltage decay reveals differences in recombination mechanisms, supported by light intensity-dependent measurements. Briefly, nonpassivated, hydrophilic contacts exhibit trap-assisted recombination, while passivated, hydrophobic contacts follow bimolecular recombination. We then investigate changes in electroactivity of hole-transfer processes as a function of scan rate and repetitive cycling using a diffusion-controlled molecular redox probe, analogous to a hole-only device achieved via the electrolyte. The nonpassivated buried contacts exhibit higher overpotentials for oxidation, indicative of hole injection/extraction barriers. We observe irreversible electron transfer via the hole-transport level of the blended heterojunction and a strong cycle dependence, consistent with changes in the hole trap state density. Passivation results in more reversible redox behaviors, consistent with more Ohmic-like contacts. Collectively, these results provide context toward the realization of durable organic photoelectrodes with optimized photovoltages and net solar-to-hydrogen conversion efficiencies via fundamental understanding of the rates of carrier generation, recombination, and transport in high-dielectric aqueous environments and opportunities to characterize buried interfaces under device-relevant electric fields.

buried interfaces↗

DOE OSTI2026

Hybridization of Excited Interlayer Excitons with Intralayer Excitons in Transition-Metal Dichalcogenide Heterostructures: Interplay of Orbital and Structural Symmetry

Hybridization between interlayer exciton (ILX) and intralayer excitons offers a powerful route to engineer light–matter interactions in transition-metal dichalcogenide (TMDC) heterostructures, yet the underlying mechanism and selection rules remain elusive. Here we probe exciton hybridization in MoTe2/MoSe2 heterobilayers under a tunable out-of-plane electric field and observe distinct avoided crossings in the electric-field dependent reflection spectra. We associate them with coupling between excited ILX states, including the 2p and 2s Rydberg states, and MoTe2 intralayer exciton. Supported by ab initio GW plus Bethe-Salpeter equation (GW-BSE) calculations, we identify the hybridizing states and establish optical selection rules based on the effective angular momentum of the exciton states. These findings highlight the role of excitonic binding in the observed hybridization, rather than that of simple band-mixing models, and provide a new pathway for brightening high-energy dark states.

Yao, Helen [Department of Materials Science and En↗

DOE OSTI2026

A Faster-Than-Real-Time Framework for Reliability-Oriented Simulation of PV Inverters

Physics-of-Failure (PoF) based reliability assessment for photovoltaic (PV) inverters requires long-duration electrical and electrothermal stress histories, yet generating such stress histories with high-fidelity switching models over year long mission profiles is computationally prohibitive. Conventional methods either sacrifice modeling fidelity for speed or require runtimes that are impractical for design iteration and uncertainty studies. To address this bottleneck, this paper presents a High-Performance Computing (HPC) based simulation frame work for faster-than-real-time reliability-oriented simulation. The proposed framework integrates the Average-to-Switching (A2S) method with parallel computing techniques to accelerate switching-level waveform reconstruction. We further introduce optimization strategies, including cluster merging and sensitivity based mission profile screening, to reduce the computational burden. Evaluated using real-world mission profile inputs and a MATLAB/Simulink switching-model reference, the framework reduces the simulation time for a one-year mission from an intractable multi-year duration to approximately 7.3 minutes while maintaining low waveform error. This acceleration provides a practical reliability-oriented simulation engine that can be coupled with component-specific aging models for subsequent PV inverter PoF assessment.

High-performance Computing↗

DOE OSTI2025

PtCoO 2 for Scaled Interconnects

Copper (Cu) interconnects are an increasingly important bottleneck in integrated circuits due to energy consumption and latency caused by the notable increase in Cu resistivity as dimensions decrease, primarily due to electron scattering at surfaces. Herein, the potential of a directional conductor, PtCoO 2 , which has a low bulk resistivity and a distinctive anisotropic structure that mitigates electron surface scattering is showcased. Thin films of PtCoO 2 of various thicknesses are synthesized by molecular beam epitaxy (MBE) coupled with a postdeposition annealing process and the superior quality of PtCoO 2 films is demonstrated by multiple characterization techniques. The thickness‐dependent resistivity curve illustrates that PtCoO 2 significantly outperforms effective Cu (Cu with TaN barriers) and Ru in resistivity below 20.0 nm with a more than 6x reduction compared to effective Cu below 6.0 nm, having a value of only 6.32 μΩ cm at 3.3 nm. It is determined that grain boundary scattering can still be improved for even lower resistivities in this material system through a combination of experiments and theoretical simulations. PtCoO 2 is therefore a highly promising alternative material for future interconnect technologies promising lower resistivities, better stability, and significant improvements in energy efficiency and latency for advanced integrated circuits.

Li, Yansong [Department of Electrical Engineering ↗

DOE OSTI2026

Surface Energy Modulated Self‐Assembly of Percolative Gallium Nanodroplet Films for Stretchable Electronics

Advancements in soft robotics and wearable technologies have led to an increased need for flexible and stretchable electronic systems. Liquid metals like Gallium (Ga) and its alloys offer high potential in the field of stretchable electronics and photonics due to their inherent high conductivity and malleability. However, their high surface tension and native oxide formation hinder uniform wetting and continuous film formation to get conducting films. Here, we report a fabrication strategy to realize electrically conductive Ga thin films with effective thicknesses around 100 nm on polymeric and elastomeric substrates. By enhancing the surface energy of the elastomer, we create uniform Ga nanodroplets capable of sustaining stretchability up to 200% strain. Our devices exhibit electronic conduction primarily through tunneling and display strain tunable piezoresistive characteristics, which are explained using Kirchhoff's resistive network and Simmon's analytical tunneling current model. To showcase the device's capability in fields of stretchable electronics, we demonstrate several functional prototypes, including flexible devices integrated with Light Emitting Diodes (LEDs), curvature and pressure sensors, and soft robotic grippers capable of sensing object curvature. The demonstrated devices highlight the potential of this approach for scalable integration of stretchable electronics in soft robotic and wearable platforms.

42 ENGINEERING↗

DOE OSTI2026

Probing jet base emission of M87* with the 2021 Event Horizon Telescope observations

We investigate the presence and spatial characteristics of the jet base emission in M87* at 230 GHz, enabled by the significantly enhanced (u,v) coverage in the 2021 Event Horizon Telescope (EHT) observations. The integration of the 12−m Kitt Peak Telescope (USA) and NOEMA (France) stations into the array introduces two critical intermediate-length baselines to SMT (USA) and IRAM 30−m (Spain), providing sensitivity to emission structures at spatial scales of ∼250 μas and ∼2500 μas (∼ 0.02 pc and ∼ 0.02 pc). Without these new baselines, previous EHT observations of the source in 2017 and 2018 lacked the capability to constrain emission on large scales, where a “missing flux” of order ∼1 Jy is expected to reside. To probe these scales, we analyzed closure phases–robust against station-based gain calibration errors–and model the jet base emission using a simple Gaussian component offset from the compact ring emission at spatial separations > 100 μas. Our analysis revealed a Gaussian feature centered at (ΔRA ≈ 320 μ as, ΔDec. ≈ 60 μ as), projected separation of ≈ 5500 AU, with an estimated flux density of only ∼60 mJy, implying that most of the missing flux identified in previous EHT studies had to originate from different, larger scales. Brighter emission at the relevant spatial scales is firmly ruled out, and the data do not favor more complex models. This component aligns with the inferred position of the large-scale jet and is therefore physically consistent with the emission of the jet base. While our findings point to detectable jet base emission at 230 GHz, the limited coverage provided by only two intermediate baselines limits our ability to robustly reconstruct its morphology. Consequently, we treated the recovered Gaussian as an upper limit on the jet base flux density. Future EHT observations with expanded intermediate baseline coverage will be essential to constrain the structure and nature of this component with higher precision.

accretion, accretion disks↗

DOE OSTI2026

Locating the missing large-scale emission in the jet of M87* with short EHT baselines

In very-long baseline interferometric arrays, nearly co-located stations probe the largest scales and typically cannot resolve the observed source. In the absence of a large-scale structure, closure phases constructed with these stations are zero and, since they are independent of station-based errors, they can be used to probe data issues. Here, we show how these trivial closure phases become nonzero with a brightness distribution on smaller scales than their short baseline would suggest. When applied to sources that are made up of a bright compact and large-scale diffuse component, the trivial closure phases directly measure the centroid relative to the compact source and higher-order image moments. We present a technique to measure these image moments with minimal model assumptions and validate it on synthetic Event Horizon Telescope (EHT) data. We then apply this technique to 2017 and 2018 EHT observations of M87* and find a weak preference for extended emission in the direction of the large-scale jet. We also apply it to 2021 EHT data and measure the source centroid about 1 mas northwest of the compact ring, which is consistent with the jet observed at lower frequencies.

79 ASTRONOMY AND ASTROPHYSICS↗

DOE OSTI2025

Review on Preprocessing Strategies, Deactivation, Thermal Safety, and Future Perspectives in Lithium-Ion Battery Recycling

The rapid growth in the use of lithium-ion batteries (LIBs) in electric vehicles, consumer electronics, and renewable energy storage has made effective end-of-life management essential. Recycling LIBs is critical not only for resource recovery and environmental protection but also for ensuring safety and economic viability. This review focuses on the preprocessing technologies that precede typical recovery processes, including disassembly, sorting, discharging, electrolyte removal, dismantling, thermal treatment, separation, and flotation. These steps play a foundational role in determining the efficiency, safety, and environmental impact of LIB recycling. LIBs pose substantial fire and explosion risks due to residual charge, flammable electrolytes, and reactive materials. The conditions and successive progression of the exothermic reactions which lead to thermal runaway has been discussed. It also explores secure deactivation techniques such as external circuit discharge, saline immersion, and thermomechanical methods, alongside fire prevention strategies including the use of flame retardants, elimination of oxidants, and reduction of heat generation and accumulation. Challenges and future directions are outlined, highlighting the need for standardized designs, automation, and safer, more sustainable recycling infrastructure. Furthermore, this review is distinguished by its focused analysis of preprocessing and deactivation steps, with particular attention to the thermal safety engineering aspects of LIB recycling.

Battery deactivation↗

DOE OSTI2026

Full-polarization millimeter wavelength variability of Sagittarius A * during the 2018 EHT campaign

Context. Sagittarius A* (Sgr A*), the supermassive black hole at the center of the Milky Way, provides a unique laboratory to study accretion dynamics and plasma processes near the event horizon. Aims. We investigated the variability and polarization properties of Sgr A* using ALMA observations during the 2018 Event Horizon Telescope campaign. Methods. We analyzed high-cadence full-polarization light curves from ALMA at millimeter wavelengths, performed time-series analysis, and investigated the temporal behavior during an X-ray flare observed by Chandra on 2018 April 24. The variability characteristics are compared with expectations from standard accretion flow models. Results. We find low variability in total intensity (σ/μ < 10%), but significantly higher variability in linear and circular polarization (∼30% and ∼50%, respectively). A time-series analysis reveals red-noise variability, with power spectral densities between −2 and −3 across all Stokes parameters. Polarized intensity shows stable intra-day timescales, while total intensity exhibits more variable timescales, suggesting distinct emission regions, with polarization likely arising from a coherent structure. On April 24, a statistically significant inter-band delay in polarized intensity coincides with a near-simultaneous X-ray and millimeter peak that deviates from the typical delayed flare scenario. This event also features enhanced millimeter variability and coherent polarization loop evolution. The observed simultaneity challenges standard models of transient synchrotron emission with cooling delays, favoring instead a scenario of continuous energy injection in an optically thin region. Conclusions. Our results offer new constraints on the physical mechanisms driving variability in Sgr A*, and provide key observational input for refining theoretical models of accretion and plasma behavior in the vicinity of supermassive black holes.

Galaxy: center↗

DOE OSTI2026

Spatially resolved polarization swings in the supermassive binary black hole candidate OJ 287 with first Event Horizon Telescope observations

We present the first Event Horizon Telescope 1.3 mm observations of the supermassive binary black hole candidate OJ 287. The observations achieved an unprecedented angular resolution of 18 μas and reveal significant structural and polarization variability over just five days, marking the shortest timescale on which such changes have been directly imaged in this source. The inner jet exhibits a twisted ridgeline structure, with features displaying apparent superluminal motions up to about 22 c. The linear polarization maps reveal three main polarized features whose electric-vector position angles (EVPAs) change substantially over the time span of our observations, including a component with a radial polarization consistent with being produced by a recollimation shock. Most notably, we directly resolved two innermost jet components whose EVPAs rotate in opposite directions. The faster component, moving at 2.4 ± 0.9 μas/day (17.4 ± 6.5 c), exhibits counterclockwise EVPA swings of roughly 3.7° per day, while the slower component, with a proper motion of 1.4 ± 0.3 μas/day (10.2 ± 2.2 c), rotates clockwise at approximately 2.5° per day. Previous studies inferred helical magnetic fields in AGN jets from time-resolved or integrated polarization variability but lacked the angular resolution to directly image this effect. Our results provide spatially resolved evidence that a helical magnetic field threads the jet’s collimation and acceleration zone, ruling out models based on the superposition of unresolved components. Our analysis suggests that propagating shocks interact with a Kelvin–Helmholtz plasma instability, illuminating different phases of the helical magnetic field and producing the observed polarization spatial and temporal variability. Moreover, our model naturally accounts for the more rapid polarization rotation observed in the faster moving component. Our model predicts even more rapid swings in polarization, which could be tested with future observations featuring a more densely sampled time coverage.

OJ 287↗

DOE OSTI2025

Field-tunable valley coupling in a dodecagonal semiconductor quasicrystal

Quasicrystals are characterized by atomic arrangements having long-range order without periodicity. Van der Waals bilayers provide an opportunity to controllably vary the atomic alignment between two layers from a periodic moiré crystal to an aperiodic quasicrystal. Here, in this work, we reveal that in a dodecagonal WSe 2 quasicrystal, two separate valleys in separate layers are brought arbitrarily close in momentum space through higher-order Umklapp scatterings. A modest perpendicular electric field is then sufficient to induce strong interlayer valley hybridization, manifested as another hybrid excitonic doublet. Concurrently, we observe the disappearance of the trion that exists at low field, which we attribute to a modified spatial distribution of the wavefunction due to the quasicrystal potential. This is possibly a precursor to localization. Our findings highlight the ability of incommensurate systems to bring any pair of momenta into close proximity, thereby introducing opportunities for valley engineering.

electronic properties and materials↗

DOE OSTI2025

Surface conduction and reduced electrical resistivity in ultrathin noncrystalline NbP semimetal

The electrical resistivity of conventional metals such as copper is known to increase in thin films as a result of electron-surface scattering, thus limiting the performance of metals in nanoscale electronics. Here, in this study, we find an unusual reduction of resistivity with decreasing film thickness in niobium phosphide (NbP) semimetal deposited at relatively low temperatures of 400°C. In films thinner than 5 nanometers, the room temperature resistivity (~34 microhm centimeters for 1.5-nanometer-thick NbP) is up to six times lower than the resistivity of our bulk NbP films, and lower than conventional metals at similar thickness (typically about 100 microhm centimeters). The NbP films are not crystalline but display local nanocrystalline, short-range order within an amorphous matrix. Our analysis suggests that the lower effective resistivity is caused by conduction through surface channels, together with high surface carrier density and sufficiently good mobility as the film thickness is reduced. These results and the fundamental insights obtained here could enable ultrathin, low-resistivity wires for nanoelectronics beyond the limitations of conventional metals.

42 ENGINEERING↗

DOE OSTI2025

Systematic Bandgap Engineering of a 2D Organic–Inorganic Chalcogenide Semiconductor via Ligand Modification

Hybrid organic–inorganic semiconductors present new opportunities for optoelectronic materials design not available in all-organic or all-inorganic materials. One example is silver phenylselenide (AgSePh) – or “mithrene” – a blue-emitting 2D organic–inorganic semiconductor exhibiting strong optical and electronic anisotropy. Here, we show that the bandgap of mithrene can be systematically tuned by introducing electron-donating and electron-withdrawing groups to the phenyl ligands. We synthesized nine mithrene variants, eight of which formed 2D van der Waals crystals analogous to those of AgSePh. Density functional theory calculations reveal that these 2D mithrene variants are direct-gap or nearly direct gap semiconductors. Furthermore, we identify correlations between the optical gap and three experimental observables – the Hammett constant, 77 Se chemical shift, and selenium partial charge – offering predictive power for bandgap tuning. These findings highlight new opportunities for applying the tools of chemical synthesis to semiconductor materials design.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2021

Methane Mitigation Thermoelectric Generator (MMTEG) (Final Scientific/ Technical Report)

Gas Technology Institute (GTI) has completed a $1.815M (plus $500K cost share), 54-month Co-operative agreement with the Department of Energy’s National Energy Technology Laboratory to develop a Methane Mitigation Thermoelectric Generator (MMTEG) system for gas field applications. This novel system uses fugitive gas to produce electrical power and consists of Thermoelectric Generators (TEG) driven by a linear burner, an air compressor, an accumulator, valves, batteries, and power electronics. The electrical power generated by the system is used to compress air and, in turn, the air is used to operate the pneumatic valves at the well site instead of using natural gas (NG) which would then be vented. The team completed the project objectives which included (1) Design, fabricate and test an integrated 6We nominal MMTEG prototype system, (2) Design a “retrofit kit” MMTEG system capable of being field tested at a gas well production site, and (3) build and test the field MMTEG system in a laboratory environment. Multiple system options were developed prior to selecting a “Passive” system which meets cost, NG savings, and greenhouse gas (GHG) reduction targets although not as efficient as initially planned. The MMTEG system is built primarily from commercial off-the-shelf parts (in some cases re-purposed) including the heat exchanger, heat rejection, electronic components, and also the TEGs. The team developed and implemented a novel system including the control system developed by Morrison Applied Sciences (MAS). The team completed incremental demonstrations of the hardware prior to the MMTEG system demonstration. A one-year simulation of the air delivery and battery charging subsystems was completed prior to the integration into the MMTEG system. In addition, the team simulated two-years of thermal cycles for integrated Burner/TEG/heat rejection subsystem. Finally, the entire MMTEG system was assembled, and troubleshooting was completed over a two-week period. Next, the MMTEG system was tested to simulate over 15 weeks of entire system operation over approximately four weeks in an accelerated test fashion with minimal intervention (such as changing fuel tanks). The MMTEG system met the key goals of a unit cost of under $1500 while saving 97% of NG expended today (including leakage) on average by pneumatic systems venting to the atmosphere. The MMTEG system reduced GHG emissions by 1000X (using the methane intensification factor of 28 relative to CO2). GTI is currently pursuing a field test of the MMTEG system. Interfacing with producers has provided additional insight into system improvements. Planned improvements include additional weather protection and control system improvements including the implementation of a long- range radio capability to notify operators if there is a fault.

03 NATURAL GAS↗

DOE OSTI2025

Strain-induced lead-free morphotropic phase boundary

Enhanced susceptibilities in ferroelectrics often arise near phase boundaries between competing ground states. While chemically-induced phase boundaries have enabled ultrahigh electrical and electromechanical responses in lead-based ferroelectrics, precise chemical tuning in lead-free alternatives, such as (K,Na)NbO 3 thin films, remains challenging due to the high volatility of alkali metals. Here, we demonstrate strain-induced morphotropic phase boundary-like polymorphic nanodomain structures in chemically simple, lead-free, epitaxial NaNbO 3 thin films. Combining ab initio simulations, thin-film epitaxy, scanning probe microscopy, synchrotron X-ray diffraction, and electron ptychography, we reveal a labyrinthine structure comprising coexisting monoclinic and bridging triclinic phases near a strain-induced phase boundary. The coexistence of energetically competing phases facilitates field-driven polarization rotation and phase transitions, giving rise to a multi-state polarization switching pathway and large enhancements in dielectric susceptibility and tunability across a broad frequency range. Our results open new possibilities for engineering lead-free thin films with enhanced functionalities for next-generation applications.

Electronic properties and materials↗

DOE OSTI2025

Atomic layer deposition of nanofilms on porous polymer substrates: Strategies for success

Atomic layer deposition (ALD) is a versatile technique for engineering the surfaces of porous polymers, imbuing the flexible, high-surface-area substrates with inorganic and hybrid material properties. Previously reported enhancements include fouling resistance, electrical conductance, thermal stability, photocatalytic activity, hydrophilicity, and oleophilicity. However, there are many poorly understood phenomena that introduce challenges in applying ALD to porous polymers. In this paper, we address five common challenges and ways to overcome them: (1) entrapped precursor, (2) embrittlement, (3) film fracture, (4) deformation, and (5) pore collapse. These challenges are often interrelated and can exacerbate one another. To investigate these phenomena, we applied various ALD chemistries to porous polymers including polyethersulfone, polysulfone, polyvinylidene fluoride, and polycarbonate track-etched membranes. Reaction-diffusion modeling revealed why certain precursors and processing conditions result in embrittling subsurface material growth, entrapment of unreacted precursors, and nongrowth. We quantify the limits of ALD processing temperatures that are dictated by thermal expansion mismatch and can lead to fractured ALD films. The results herein allow us to make recommendations to avoid, mitigate, or overcome the difficulties encountered when performing ALD and plasma-enhanced ALD on porous polymers. We intend this article to serve as a “lessons learned” guide informed by previous experience to provide a better understanding of the difficulties and limitations of ALD on porous polymers and knowledge-based guidelines for successful depositions. This knowledge can accelerate future research and help experimentalists navigate and troubleshoot as they expose porous polymers to reactive precursor vapors.

36 MATERIALS SCIENCE↗

DOE OSTI2024

SMART SiC Power ICs: Scalable, Manufacturable, and Robust Technology for SiC Power Integrated Circuits (Final Technical Report)

This collaborative project was initiated with the goal of developing Scalable, Manufacturable, and Robust Technology for SiC Power Integrated Circuits (SMART SiC Power ICs). In pursuit of this objective, innovative designs and fabrication processes were implemented, enabling the development of large-scale (>1 cm²) SiC Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuits and high-voltage (400–600 V) lateral power MOSFETs (HV-LDMOS) on 150 mm 4H-SiC substrates. The resulting SMART SiC Power ICs are tailored to support a wide range of applications requiring diverse voltage and power levels, including automotive systems, industrial equipment, electronic data processing, energy harvesting, and power conditioning. To achieve the proposed ‘SMART’ technology for SiC ICs, the team focused on 1) the Development of highly scalable CMOS (with high channel mobilities for n-type and p-type MOSFETs), LDMOS (~600V, 10A rated), and IC technologies, 2) Establishment of a manufacturable process baseline in a production-grade-, 150mm, SiC fabrication facility, and 3) Demonstration of SMART SiC ICs. The project initially comprised of fabricating 5 lots. In lot 1 monolithic integration using a single process was achieved. Here, we were able to successfully accomplish Integrated HV NMOSFET with LV CMOS on N-epi/N+ Substrate. The HV NMOS demonstrated a Breakdown Voltage (BV) more than 600V. Circuit demonstration of CMOS was also another achievement from this lot. In lot 2, priority was in place for isolation and integration. Here we addressed the isolation concerns and integrated the HV NMOS and LV CMOS using the N-epi/P-epi/N+ substrate. Similar to the lot 1, we were able to achieve a BV of 600 V for HV NMOS. Optimized gate oxide process with high channel mobilities, better gate oxide reliability, development of SPICE models, successful ohmic process development, novel wafer area saving design layouts, P+ isolation schemes with channeling implantations and high temperature operational circuits demonstrations are some of the key highlights from lot 1 and lot2. In lot 3, discrete device performances of HV NMOS with a BV ~700V and reliable LV CMOS performances were achieved. Also, novel architectural solutions were successfully implemented to suppress the electric field crowding at the gate oxide for reliable operations. In lot 4, half bridge power driver ICs with a conversion efficiency of (target 90% to 95%) in the 1-5MHz switching frequency range for output power between 25 W to 3 kW have been included in. However, due to the unfortunate events of sudden foundry shutdown (SiCamore Semi) the processing of lot 4 wafers came to a complete stop (January 2024). Arrangements have recently been made to shift the fabrication to another foundry, General Electric Aerospace. The fabrication process now on course (as of December 2024). Characterizations are delayed due to this unfortunate circumstance. The proposed trench architectural-based devices and ICs (lot 5) underwent modifications from the original project proposal. This change was necessitated by limitations in the availability of trench-based processes at commercial production-grade fabrication facilities in the US. Apart from above achievements, a Process Development Kit (PDK) was successfully developed for planar type SiC CMOS/LDMOS.

42 ENGINEERING↗

DOE OSTI2025

Magnetically tuned metal-insulator transition in LaAlO 3 /SrTiO 3 nanowire arrays

A wide family of two-dimensional (2D) systems, including stripe-phase superconductors, sliding Luttinger liquids, and anisotropic 2D materials, can be modeled by an array of coupled one-dimensional (1D) electron channels or nanowire arrays. Here we report experiments in arrays of conducting nanowires with gate and field tunable interwire coupling, that are programmed at the LaAlO 3 /SrTiO 3 interface. We find a magnetically tuned metal-to-insulator transition in which the transverse resistance of the nanowire array increases by up to four orders of magnitude, which can be further tuned with a gate voltage. To explain this behavior, we develop a minimal model of a coupled two-wire system where a Wenzel-Kramers-Brillouin-based approach is used to estimate the transverse tunneling conductance. We demonstrate the existence of distinct conductance features and highlight the crucial role played by the field dependence of the interwire potential barrier on transport properties. Since our model makes minimal assumptions, we expect our predictions to hold for a wide class of coupled 1D systems. The nanowire arrays can serve as model systems to understand the origin of exotic behavior in correlated materials via analog quantum simulation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗