Search NASA⌕ Search

SEARCH · Search NASA

Results for “Power Devices”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Operando Temperature Measurements of Photovoltaic Laser Power Converter Devices Under Continuous High-Intensity Illumination

Photovoltaic devices that operate under extremely high irradiances, such as laser power converters (LPCs), may also operate at elevated temperatures, even under active cooling, as the result of large temperature gradients. We demonstrate the operation of GaAs LPC devices under orders of magnitude of irradiances up to 150 W/cm 2 in a monochromatic laser simulator with an active cooling stage. The steady-state open-circuit voltage (V OC ) as a function of irradiance is known to droop at high irradiance as the result of junction heating, but the junction temperature can be difficult to measure by conventional methods. Fast, transient V OC measurements under these extreme operating conditions are used here to determine the junction temperature. Empirical V OC temperature coefficients of the devices at each irradiance of interest are determined and used as an integral part of this technique. We show that the thermal design of different LPC devices strongly affects the operating temperature of the junctions. Knowledge of the operating temperature can be a strong tool for understanding the nature of loss mechanisms and improving the design for the operation of photovoltaic LPCs at high irradiances. Furthermore, this technique can be used for laboratory devices during initial design as well as to characterize mass-produced and packaged devices for quality control.

14 SOLAR ENERGY↗
DOE OSTI2021

Control approach for power modulation of end-use loads

Methods, apparatus, and systems are disclosed herein for power modulation control of power grids using end-use loads. At the beginning of a coordination period typically lasting a few minutes, a population of end-use loads (water heaters, air conditioners, plug-in electric vehicles, etc.) is interrogated for their willingness to participate in power modulation by undergoing state transitions from on to off, or off to on. Distribution system flexibilities are calculated from the sums of device powers within distribution systems. Area flexibilities are calculated from the sums of device powers within areas. Thresholds for various devices to change state in response to inter-area oscillation damping or frequency regulation are derived from these flexibilities. Two power functions are monitored in real-time and compared with the device thresholds to trigger state changes which then remain locked throughout the remainder of the coordination period, then the devices are released from the lockout state.

Lian, Jianming↗
DOE OSTI2025

Hardware-in-the-Loop Using Electromagnetic Transient Simulation

Digital real time simulators have the capability to run electromagnetic transient simulations in real time. This capability allows users to leverage the hardware-software combination to evaluate controller performance, protection device performance, and power device performance. This has helped many field deployment projects to be successful and be cost-effective. In this talk, we will present current state-of-art, and future of real time electromagnetic transient simulation and its impacts on field deployment.

08 HYDROGEN↗
DOE OSTI2022

PowerGridworld: A Framework for Multi-Agent Reinforcement Learning in Power Systems: Preprint

We present the PowerGridworld software package to provide users with a light-weight, modular, and customizable framework for creating power systems-focused, multi-agent gym environments that readily integrate with existing training frameworks for reinforcement learning (RL). While many frameworks exist for training multi-agent (MA) RL policies, none exist to rapidly prototype and develop the environments themselves, especially in the context of heterogeneous (composite, multi-device) power systems where power flow solutions are required to define grid-level variables and costs. PowerGridworld is an open-source software package that helps to fill this gap. To highlight PowerGridworld's key features, we present two case studies and demonstrate learning multi-agent RL policies using both OpenAI's MADDPG and RLLib's PPO algorithms where, in both cases, at least some subset of agents incorporate elements of the power flow solution at each time step as part of their reward (negative cost) structures.

MATHEMATICS AND COMPUTING↗
DOE OSTI2022

Distributed polarization-doped GaN p–n diodes with near-unity ideality factor and avalanche breakdown voltage of 1.25 kV

Polarization-induced (Pi) distributed or bulk doping in GaN, with a zero dopant ionization energy, can reduce temperature or frequency dispersions in impurity-doped p–n junctions caused by the deep-acceptor-nature of Mg, thus offering GaN power devices promising prospects. Before comprehensively assessing the benefits of Pi-doping, ideal junction behaviors and high-voltage capabilities should be confirmed. In this work, we demonstrate near-ideal forward and reverse I–V characteristics in Pi-doped GaN power p–n diodes, which incorporates linearly graded, coherently strained AlGaN layers. Hall measurements show a net increase in the hole concentration of 8.9 × 1016 cm−3 in the p-layer as a result of the polarization charge. In the Pi-doped n-layer, a record-low electron concentration of 2.5 × 1016 cm−3 is realized due to the gradual grading of Al0-0.72GaN over 1 μm. The Pi-doped p–n diodes have an ideality factor as low as 1.1 and a 0.10 V higher turn-on voltage than the impurity-doped p–n diodes due to the increase in the bandgap at the junction edge. A differential specific on-resistance of 0.1 mΩ cm2 is extracted from the Pi-doped p–n diodes, similar with the impurity-doped counterpart. The Pi-doped diodes show an avalanche breakdown voltage of ∼1.25 kV, indicating a high reverse blocking capability even without an ideal edge-termination. This work confirms that distributed Pi-doping can be incorporated in high-voltage GaN power devices to increase hole concentrations while maintaining excellent junction properties.

Nomoto, Kazuki↗
DOE OSTI2021

Thermal and Reliability Characterization of an Epoxy Resin-Based Double-Side Cooled Power Module

Wide-Band Gap (WBG) power devices have become a promising option for high-power applications due to the superior material properties over traditional Silicon. To not limit WBG devices’ mother nature, a rugged and high-performance power device packaging solution is necessary. This study proposes a Double-Side Cooled (DSC) 1.2 kV half-bridge power module having dual epoxy resin insulated metal substrate (eIMS) for solving convectional power module challenges and providing a cost-effective solution. The thermal performance outperforms traditional Alumina (Al2O3) Direct Bonded Copper (DBC) DSC power module due to moderate thermal conductivity (10 W/mK) and thin (120 mm) epoxy resin composite dielectric working as the IMS insulation layer. This novel organic dielectric can withstand high voltage (5 kVAC @ 120 μm) and has a Glass Transition Temperature (Tg) of 300°C, which is suitable for high-power applications. In the thermal-mechanical modeling, the organic DSC power module can pass the thermal cycling test over 1,000 cycles by optimizing the mechanical properties of the encapsulant material. In conclusion, this article not only proposes a competitive organic-based power module but also a methodology of evaluation for thermal and mechanical performance.

42 ENGINEERING↗
DOE OSTI2023

β -Ga 2 O 3 trench Schottky diodes by low-damage Ga-atomic beam etching

β-Ga 2 O 3 trench Schottky barrier diodes fabricated through a Gallium atomic beam etching technique with excellent field strength and power device figure of merit are demonstrated. Trench formation was accomplished by a low-damage Ga flux etch that enables near-ideal forward operating characteristics that are independent of fin orientation. The reverse breakdown field strength of greater than 5.10 MV/cm is demonstrated at a breakdown voltage of 1.45 kV. This result demonstrates the potential for Ga atomic beam etching and high-quality dielectric layers for improved performance in β-Ga 2 O 3 vertical power devices.

42 ENGINEERING↗
DOE OSTI2022

Effective Selective Area Doping for GaN Vertical Power Transistors Enabled by Innovative Materials Engineering

GaN vertical power transistors have emerged as promising candidates for future high efficiency high power electronic applications, with the potential to outperform conventional GaN lateral power devices in terms of power, breakdown, and avalanche characteristics. However, the development of current GaN vertical power transistors is seriously hindered by the poor materials performance of selective area doped p-n junctions. A mechanistic understanding of these fundamental materials issues is essential in order to achieve high performance selective area doped p-n junctions and consequently to advance the GaN vertical power transistor technology. To address this challenge, we carried out a comprehensive research program that advance fundamental knowledge in the selective area doping for GaN materials, and which will lead to the development of high performance GaN vertical power transistors. First, we developed innovative fabrication processes, including novel surface etching, surface passivation, and metalorganic chemical vapor deposition (MOCVD) growth, which provided enhanced opportunities for solving the unique challenges of selective area doping in GaN materials. Second, we performed a fundamental materials study using powerful characterization methods including transmission electron microscopy (TEM), ultraviolet (UV-), x-ray and angle-resolved photoelectron spectroscopy (UPS/XPS/ARPES), electron holography, and cathodoluminescence (CL); Third, we investigated several related issues, including Mg incorporation, polarization effects in carrier transport, and non-ideal material effects, which have rarely been explored so far. At the end of this project, we successfully demonstrated (1) fundamental understanding of selective area etching, regrowth, and doping of GaN, and associated knowledge on defects, interface, and breakdown properties. (2) Effective etch and regrowth processing recipes to achieve etch/regrowth GaN p-n diodes with very low leakage of 3.5 nA at 600 V, which meets the ARPA-E target. (2) High performance vertical GaN p-n didoes and vertical junction termination extension (JTE) devices with breakdown voltage of ~ 2 kV, and breakdown electric field of ~ 3.5 MV/cm, which are close to the performance limit of GaN. The successful outcome has resulted in new fundamental understandings in the selective area doping and regrowth process for GaN, which will lead to groundbreaking GaN vertical transistors for high performance next generation power electronics.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2024

Control, Fault Management, and Grid Support Functionality of an MV AC-DC Solid State Transformer based EV Extreme Fast Charging Station

Electric vehicles (EVs) have become increasingly popular in recent times while revolutionizing the consumer and commercial transportation market. The development of charging infrastructure has become one of the priorities for increasing the adoption of EVs. Extreme fast charging (XFC) technology can reduce the so-called ’range anxiety’ of consumers as they significantly reduce the charging time. With the advent of wide band-gap (WBG) power devices and improvement in power electronic converters, medium voltage (MV) solid state transformer (SST) based XFC system has the potential to replace the traditional XFC stations because of the lower footprint, ease of installation, enhanced control feature, and better system efficiency. The control system design is one of the critical aspects of the SST development process. Careful consideration and detailed analysis are required to find out suitable control method for the SST based on its topology among different centralized and decentralized control architectures. Also, the control parameters selection and potential improvement to the transient response of the controller ought to be investigated. Another major concern of the SST is different types of internal fault which reduces the overall reliability of the XFC system. As a result, designing a robust protection system is essential. Among different fault modes, open circuit switch faults have received significant attention as an active research area because of their likelihood and severe effects on converters. Therefore, the power stages used in the XFC system require functional and accurate open circuit switch fault management methods. An equally significant aspect of this SST based XFC is its compatibility in a microgrid where there is no synchronous generator present. When the grid is not available, the XFC SSTs can provide grid forming capability and continue supplying the critical loads in islanded mode. The transition between grid connected and islanded mode, especially the grid resynchronization process has to be carefully performed for the safety of the microgrid components. The challenges posed by the aforementioned issues have inspired the work done in this dissertation. Here, a 13.2 kV, 1 MVA, AC/DC SST for the XFC system is examined and a comparative analysis is conducted to select the control architecture based on feasibility of implementation and performance. A detailed control parameter design process is demonstrated considering the sensor dynamics and delay. The selected decentralized control method is augmented by introducing a novel sensor-less load current feedforward method to provide better voltage regulation at the DC bus during a change of load. Next, in the fault management section, a hierarchical failure mode effect analysis (FMEA) is proposed to enable a systematic design of the internal fault protection of the XFC SST as there are limited examples in the literature regarding the analysis of the safety and design of the protection of a power electronic converter system. Novel open circuit switch fault management methods for the converters in the system are presented. Finally, XFC SST based MV microgrid operations in grid connected mode and islanded mode are explored. A secondary control method for grid resynchronization is presented and a design process of control parameters is shown to ensure the stability of the secondary voltage and frequency regulation.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2024

Dark Matter Induced Power in Quantum Devices

We point out that power measurements of single quasiparticle devices open a new avenue to detect dark matter (DM). The threshold of these devices is set by the Cooper pair binding energy, and is therefore so low that they can detect DM as light as about an MeV incoming from the Galactic halo, as well as the low-velocity thermalized DM component potentially present in the Earth. Using existing power measurements with these new devices, as well as power measurements with SuperCDMS-CPD, we set new constraints on the spin-independent DM scattering cross section for DM masses from about 10 MeV to 10 GeV. We outline future directions to improve sensitivity to both halo DM and a thermalized DM population in the Earth using power deposition in quantum devices. Published by the American Physical Society 2024

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2025

Eye-Safe 1.5 and 2.0 Micron Laser Power Conversion Using Metamorphic InGaAs Photovoltaic Devices

Laser power transmission at 1.5 and 2.0 microns are considered eye-safe up to 0.1 W/cm2 irradiance. Further, the atmospheric bands at these two wavelengths may provide the highest optical transmission through the atmosphere in hazy conditions. By slowly changing the lattice-constant of InGaAs with a Compositionally Graded Buffer (CGB), we have fabricated InGaAs photovoltaic (PV) devices over a wide range of bandgaps useful for multijunction concentrating photovoltaic devices, thermophotovoltaic devices, and Laser Power Converters (LPC). Here, we have demonstrated monochromatic power conversion of 1.5-micron light with an eye-safe efficiency of 39.8% at 0.1 W/cm2 with InGaAs devices lattice-matched to InP with an Antireflection Coating (ARC). We have also demonstrated 30.2% and 24.5% eye-safe LPC efficiency of metamorphic InGaAs devices grown on GaAs substrates using GaInP and AlGaAsP CGBs, respectively. Finally, we have demonstrated metamorphic InGaAs devices grown on InP and GaAs substrates that are estimated to have eye-safe LPC efficiencies at 2.0 microns of 27.4% and 20.9% respectively. The efficiencies of all these LPC devices continues to increase up to about 30-70 times the eye-safe irradiance.

eye-safe↗