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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Resonance-Enhanced Multiphoton Ionization in the X-Ray Regime

In this work, we report on the nonlinear ionization of argon atoms in the short wavelength regime using ultraintense x rays from the European XFEL. After sequential multiphoton ionization, high charge states are obtained. For photon energies that are insufficient to directly ionize a 1s electron, a different mechanism is required to obtain ionization to Ar 17+ . We propose this occurs through a two-color process where the second harmonic of the FEL pulse resonantly excites the system via a 1s→2p transition followed by ionization by the fundamental FEL pulse, which is a type of x-ray resonance-enhanced multiphoton ionization (REMPI). This resonant phenomenon occurs not only for Ar 16+ , but also through lower charge states, where multiple ionization competes with decay lifetimes, making x-ray REMPI distinctive from conventional REMPI. With the aid of state-of-the-art theoretical calculations, we explain the effects of x-ray REMPI on the relevant ion yields and spectral profile.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2021

Single-hole couplings in GaAs/AlGaAs double dots probed with transport and EDSR spectroscopy

Here, we report a detailed study of the tunnel barriers within a single-hole GaAs/AlGaAs double quantum dot device (DQD). For quantum information applications as well as fundamental studies, careful tuning and reliable measurements of the barriers are important requirements. In order to tune a DQD device adequately into the single-hole electric dipole spin resonance regime, one has to employ a variety of techniques to cover the extended range of tunnel couplings. In this work, we demonstrate four separate techniques, based upon charge sensing, quantum transport, time-resolved pulsing, and electron dipole spin resonance spectroscopy to determine the couplings as a function of relevant gate voltages and magnetic field. Measurements were performed under conditions of both symmetric and asymmetric tunnel couplings to the leads. Good agreement was observed between different techniques when measured under the same conditions. The results indicate that even in this relatively simple circuit, the requirement to tune multiple gates and the consequences of real potential profiles result in non-intuitive dependencies of the couplings as a function of the plunger gate voltage and the magnetic field.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Probing the local electronic structure of isovalent Bi atoms in InP

Cross-sectional scanning tunneling microscopy (X-STM) is used to experimentally study the influence of isovalent Bi atoms on the electronic structure of InP. In this work, we map the spatial pattern of the Bi impurity state, which originates from Bi atoms down to the sixth layer below the surface, in topographic, filled-state X-STM images on the natural {110} cleavage planes. The Bi impurity state has a highly anisotropic bowtielike structure and extends over several lattice sites. These Bi-induced charge redistributions extend along the $\langle$110$\rangle$ directions, which define the bowtielike structures we observe. Local tight-binding calculations reproduce the experimentally observed spatial structure of the Bi impurity state. In addition, the influence of the Bi atoms on the electronic structure is investigated in scanning tunneling spectroscopy measurements. These measurements show that Bi induces a resonant state in the valence band, which shifts the band edge toward higher energies. Furthermore, we show that the energetic position of the Bi-induced resonance and its influence on the onset of the valence band edge depend crucially on the position of the Bi atoms relative to the cleavage plane.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2025

Theory of tunneling between two-dimensional electron layers driven by spin pumping: Adiabatic regime and beyond

Tunneling spectroscopy between parallel two-dimensional (2D) electronic systems provides a powerful method to probe the underlying electronic properties by measuring tunneling conductance. Here, in this work, we present a theoretical framework for spin transport in 2D-to-2D tunneling systems, driven by spin pumping. This theory applies to a vertical heterostructure where two layers of metallic 2D electron systems are separated by an insulating barrier, with one layer exchange coupled to a magnetic layer driven at resonance. Utilizing a nonperturbative Floquet-Keldysh formalism, we derive general expressions for the tunneling spin and charge currents across a broad range of driving frequencies, extending beyond the traditional adiabatic pumping regime. At low frequencies, we obtain analytical results that recover the known behaviors in the adiabatic regime. However, at higher frequencies, our numerical findings reveal significant deviations in the dependence of spin and charge currents on both frequency and precession angle. This work offers fresh insights into the role of magnetization dynamics in tunneling transport, opening up new avenues for exploring nonadiabatic spin pumping phenomena.

Green's function methods↗
DOE OSTI2022

Cryogenic probe for low-noise, high-frequency electronic measurements

The design and performance of a low-noise, modular cryogenic probe, which is applicable to a wide range of measurements over a broad range of working frequencies, temperatures, and magnetic fields, is presented. The design of the probe facilitates the exchange of sample holders and sample-stage amplifiers, which, combined with its characteristic low transmission and reflection loss, make this design suitable for high precision or low sensitivity measurements. The specific example of measuring the shot noise of magnetic tunnel junctions is discussed. We highlight various design characteristics chosen specifically to expand the applicability of the probe to measurement techniques such as nuclear magnetic resonance.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Hypothetical Efficiency of Electrical to Mechanical Energy Transfer during Individual Stochastic Molecular Switching Events

There are now many examples of single molecule rotors, motors and switches in the literature that, when driven by photons, electrons or chemical reactions, exhibit well defined motions. As a step towards using these single molecule devices to perform useful functions one must understand how they interact with their environment and quantify their ability to perform work on it. Using a single molecule rotary switch we examine the transfer of electrical energy, delivered via electron tunneling, to mechanical motion and measure the forces the switch experiences with a non-contact q-plus atomic force microscope. Action spectra reveal that the molecular switch has two stable states and can be excited resonantly between them at a bias of 100 mV via a one-electron inelastic tunneling process which corresponds to an energy input of 16 zepto Joules. Furthermore, while the electrically induced switching events are stochastic and no net work is to done on the cantilever, by measuring the forces between the molecular switch and the AFM cantilever we can derive the maximum hypothetical work the switch could perform during a single switching event which is ~55 meV, equal to 8.9 zepto Joules which translates to a hypothetical efficiency ~55% per individual inelastic tunneling electron induced switching event. When co considering the total electrical energy input this drops to 1x10 -7 % due to elastic tunneling events that dominate the tunneling current. However, this approach constitutes a general method for quantifying and comparing the energy input and output of molecularmechanical devices.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Monolayer Semiconductor Auger Detector

Auger recombination in semiconductors is a many-body phenomenon in which the recombination of electrons and holes is accompanied by excitation of other charge carriers. The excess energy of the excited carriers is normally rapidly converted to heat, making Auger processes difficult to probe directly. In this paper, we employ a technique in which the Auger-excited carriers are detected by their ability to tunnel out of the semiconductor through a thin barrier, generating a current. We use vertical van der Waals heterostructures with monolayer WSe 2 as the semiconductor, with hexagonal boron nitride as the tunnel barrier, and a graphite collector electrode. The Auger processes combined with resonant absorption produce characteristic negative photoconductance. We detect holes Auger-excited by both neutral and charged excitons and find that the Auger scattering is surprisingly strong under weak excitation. Our work expands the range of techniques available for probing relaxation processes in 2D materials.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

Evidence for a spinon Kondo effect in cobalt atoms on single-layer 1T-TaSe 2

Quantum spin liquids are highly entangled, disordered magnetic states that are expected to arise in frustrated Mott insulators and to exhibit exotic fractional excitations such as spinons and chargons. Despite being electrical insulators, some quantum spin liquids are predicted to exhibit gapless itinerant spinons that yield metallic behaviour in the charge-neutral spin channel. For this study, we deposited isolated magnetic atoms onto single-layer 1T-TaSe 2 , a candidate gapless spin liquid, to probe how itinerant spinons couple to impurity spin centres. Using scanning tunnelling spectroscopy, we observe the emergence of new, impurity-induced resonance peaks at the 1T-TaSe 2 Hubbard band edges when cobalt adatoms are positioned to have maximal spatial overlap with the local charge distribution. These resonance peaks disappear when the spatial overlap is reduced or when the magnetic impurities are replaced with nonmagnetic impurities. Theoretical simulations of a modified Anderson impurity model show that the observed peaks are consistent with a Kondo resonance induced by spinons combined with spin-charge binding effects that arise due to fluctuations of an emergent gauge field.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Characterization of dangling bond defects at the crystalline Si/SiO x interface in a polycrystalline Si passivating contact solar cell at room temperature with electrically detected magnetic resonance spectroscopy

Monocrystalline silicon solar cells can achieve photoconversion efficiencies exceeding 26%; however, performance-limiting defects that trap carriers continue to be a challenge. In this work, we have characterized Si solar cells with tunneling SiO x /polycrystalline-Si (poly-Si) passivating contacts (TOPCon) on As-doped Czochralski Si wafers with electrically detected magnetic resonance (EDMR) spectroscopy. We fabricated 2 × 20 mm 2 TOPCon-like mini solar cells with edge passivation alongside larger 4 cm 2 sister cells and obtained similar device characteristics. We performed EDMR spectroscopy at 300 K on two minicells with different degrees of surface passivation based on the recombination parameter, J o , values of 40 and 310 fA/cm2. We optimized the resolution and the signal-to-noise ratio of the EDMR response of the minicells by varying the forward bias voltage and the magnetic field modulation amplitude. We detect two distinct signals with EDMR spectroscopy, an axial-like signal at g = 2.009, 2.0087, and 2.0015, and an isotropic signal at g = 2.0024, which we attribute to Si dangling bonds (P b0 and P b centers) and boron–oxygen related defects, respectively, at or near the c-Si/SiO x interface. The EDMR signals were lower for the cell with a lower value of J o , while the ratio of the two defect populations was very similar. The EDMR signal increases with forward bias but drops to zero at bias voltages >0.5 V, consistent with interface defects within or near the boron-doped emitter depletion region. Our study demonstrates a method to fabricate minicells that can be characterized with EDMR spectroscopy to detect industrially relevant defects in TOPCon cells.

14 SOLAR ENERGY↗
DOE OSTI2024

Fine structure of current noise spectra in nanoelectromechanical resonators

Here, we study the frequency-dependent noise of a suspended carbon nanotube quantum dot nanoelectromechanical resonator induced by electron-vibration coupling. Using a rigorous Keldysh diagrammatic technique, we establish a formal framework connecting the vibrational properties to electrical measurements. We find that the noise power spectrum exhibits a narrow resonant peak at the frequency of the vibrational modes. However, this fine structure tends to disappear due to a coherent cancellation effect when the tunneling barriers are tuned to a symmetric point. Notably, measuring the electrical current noise spectra provides a sensitive alternative method for detecting the damping and dephasing of quantum vibrational modes.

Electric measurements↗
DOE OSTI2026

Path-integral predictions for preasymptotic quantum tunneling

When tunneling occurs out of generic initial states, a significant fraction of probability is lost at early times, during which the dynamics is governed by excited resonance states. However, first-principles analyses based on path-integrals have only captured the leading asymptotic behavior, during which the tunneling rate is dominated by the false vacuum contribution. In this work, we discuss the behavior in the preasymptotic regime from a first-principles path-integral perspective. We demonstrate how the relevant expressions can be evaluated systematically through semiclassical methods in the recently developed steadyon picture. This approach allows one to trace the role of the relevant physical scales, making transparent the underlying assumptions and approximations, and offering a clear path to establishing a systematically improvable framework to evaluate tunneling rates nonperturbatively.

Lin, Joshua↗
DOE OSTI2021

Intrinsic donor-bound excitons in ultraclean monolayer semiconductors

The monolayer transition metal dichalcogenides are an emergent semiconductor platform exhibiting rich excitonic physics with coupled spin-valley degree of freedom and optical addressability. Here, we report a new series of low energy excitonic emission lines in the photoluminescence spectrum of ultraclean monolayer WSe 2 . These excitonic satellites are composed of three major peaks with energy separations matching known phonons, and appear only with electron doping. They possess homogenous spatial and spectral distribution, strong power saturation, and anomalously long population (>6 µs) and polarization lifetimes (>100 ns). Resonant excitation of the free inter- and intravalley bright trions leads to opposite optical orientation of the satellites, while excitation of the free dark trion resonance suppresses the satellites' photoluminescence. Defect-controlled crystal synthesis and scanning tunneling microscopy measurements provide corroboration that these features are dark excitons bound to dilute donors, along with associated phonon replicas. Our work opens opportunities to engineer homogenous single emitters and explore collective quantum optical phenomena using intrinsic donor-bound excitons in ultraclean 2D semiconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Scanning tunneling microscopy and spectroscopy characterization of Nb films for quantum applications

Niobium thin films are key components of superconducting microwave resonators. Interest in these devices has increased dramatically because of their application in quantum systems. Despite tremendous effort to improve their performance, loss mechanisms are still not well understood. Nb/substrate and Nb/air interfaces are likely culprits in contributing to decoherence and ultimately limiting the performance of superconducting devices. Here, we investigate the Nb/substrate interface by studying the effect of hydrogen-passivated H:Si(111) substrates on the local superconducting properties of ∼40 nm thick Nb films compared to Nb films grown on typical Si(001) substrates. Specifically, low-temperature scanning tunneling microscopy and spectroscopy are employed to compare nanoscale material properties. Further, the atomically flat monohydride H:Si(111) substrates are found to yield a smoother and less defective interface with the Nb film. Correspondingly, the Nb films grown on H:Si(111) substrates present more uniform superconducting properties and exhibit less quasiparticle broadening.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Electron transport through antiferromagnetic spin textures and skyrmions in a magnetic tunnel junction

An ideal layered $\hat{x}$-polarized antiferromagnet (AFM) between two antialigned $±\hat{z}$ polarized ferromagnetic (FM) contacts transmits no current due to a π phase difference of the matrix elements coupling the spin degenerate states to the two FM contacts. Inserting a normal-metal layer or tunnel barrier layer between one FM contact and the AFM alters this phase difference, and due to the unequal weighting of the two spins at the interface, it also breaks the spin degeneracy of the two AFM states. Further, the broken symmetry of the matrix elements combined with the broken degeneracy of the AFM states results in a Fano resonance in the transmission and a turn-on of the $T_{↑,↓}$ transmission channel. Such a magnetic tunnel junction geometry with two antialigned $±\hat{z}$ FM contacts can electrically detect an AFM skyrmion. The AFM skyrmion serves as an analog of the oblique polarizer in the triple-polarizer experiment. Resistances and resistance ratios are calculated and compared for FM and AFM skyrmions in a magnetic tunnel junction.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Anomalous Loss Reduction Below Two‐Level System Saturation in Aluminum Superconducting Resonators

Superconducting resonators are widely used in many applications such as qubit readout for quantum computing, and kinetic inductance detectors. These resonators are susceptible to numerous loss and noise mechanisms, especially the dissipation due to two-level systems (TLS) which become the dominant source of loss in the few-photon and low temperature regime. In this study, capacitively-coupled aluminum half-wavelength coplanar waveguide resonators are investigated. Surprisingly, the loss of the resonators is observed to decrease with a lowering temperature at low excitation powers and temperatures below the TLS saturation. This behavior is attributed to the reduction of the TLS resonant response bandwidth with decreasing temperature and power to below the detuning between the TLS and the resonant photon frequency in a discrete ensemble of TLS. When response bandwidths of TLS are smaller than their detunings from the resonance, the resonant response and thus the loss is reduced. At higher excitation powers, the loss follows a logarithmic power dependence, consistent with predictions from the generalized tunneling model (GTM). A model combining the discrete TLS ensemble with the GTM is proposed and matches the temperature and power dependence of the measured internal loss of the resonator with reasonable parameters.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Insulators at fractional fillings in twisted bilayer graphene partially aligned to hexagonal boron nitride

At partial fillings of its flat electronic bands, magic-angle twisted bilayer graphene (MATBG) hosts a rich variety of competing correlated phases that show sample-to-sample variations. Divergent phase diagrams in MATBG are often attributed to the sublattice polarization energy scale, tuned by the degree of alignment of the hexagonal boron nitride (hBN) substrates typically used in van der Waals devices. Unaligned MATBG exhibits unconventional superconductor and correlated insulator phases, while nearly perfectly aligned MATBG/hBN exhibits zero-field Chern insulating phases and lacks superconductivity. Here we use scanning tunneling microscopy and spectroscopy (STM/STS) to observe gapped phases at partial fillings of the flat bands of MATBG in a new intermediate regime of sublattice polarization, observed when MATBG is only partially aligned (θ Gr-hBN ≈ 1.65°) to the underlying hBN substrate. Under this condition, MATBG hosts not only phenomena that naturally interpolate between the two sublattice potential limits, but also unexpected gapped phases absent in either of these limits. At charge neutrality, we observe an insulating phase with a small energy gap (Δ < 5 meV) likely related to weak sublattice symmetry breaking from the hBN substrate. In addition, we observe new gapped phases near fractional fillings ν = ±1/3 and ν = ±1/6, which have not been previously observed in MATBG. Importantly, energy-resolved STS unambiguously identifies these fractional filling states to be of single-particle origin, possibly a result of the super-superlattice formed by two moiré superlattices. Finally, our observations emphasize the power of STS in distinguishing single-particle gapped phases from many-body gapped phases in situations that could be easily confused in electrical transport measurements, and demonstrate the use of substrate engineering for modifying the electronic structure of a moiré flat-band material.

Physics↗
DOE OSTI2026

Engineering phase-frustration-induced flat bands in an aza-triangulene covalent kagome lattice

π-Conjugated covalent organic frameworks provide a versatile molecular scaffold for the realization of designer quantum nanomaterials. Strong electron–electron correlation within these artificial lattices can give rise to exotic phases of matter. Their experimental realization, however, requires precise control over orbital symmetry, charge localization and band dispersion, all arising from the effective hybridization between molecular linkers and nodes. Here we present a modular strategy for constructing diatomic kagome lattices from aza-[3]triangulene nodes, in which a D 3h -symmetric ground state is stabilized through resonance contributions from a cumulenic linker. First-principles density functional theory and scanning tunnelling spectroscopy reveal that the hybridization of a sixfold-degenerate set of edge-localized Wannier functions in the unit cell gives rise to orbital-phase-frustration-induced non-trivial flat bands. These results establish a general design principle for engineering orbital interactions in organic lattices and open a pathway towards programmable covalent-organic-framework-based quantum materials with correlated electronic ground states.

conjugated polymers↗