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Results for “Silicon imager”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1982

Charge-coupled device (CCD) television camera for NASA's Galileo mission to Jupiter

The CCD detector under construction for use in the slow-scan television camera for the NASA Galileo Jupiter orbiter to be launched in 1985 is presented. The science objectives and the design constraints imposed by the earth telemetry link, platform residual motion, and the Jovian radiation environment are discussed. Camera optics are inherited from Voyager; filter wavelengths are chosen to enable discrimination of Galilean-satellite surface chemical composition. The CCO design, an 800 by 800-element 'virtual-phase' solid-state silicon image-sensor array with supporting electronics, is described with detailed discussion of the thermally generated dark current, quantum efficiency, signal-to-noise ratio, and resolution. Tests of the effect of ionizing radiation were performed and are analyzed statistically. An imaging mode using a 2-1/3-sec frame time and on-chip summation of the signal in 2 x 2 blocks of adjacent pixels is designed to limit the effects of the most extreme Jovian radiation. Smearing due to spacecraft/target relative velocity and platform instability will be corrected for via an algorithm maximizing spacial resolution at a given signal-to-noise level. The camera is expected to produce 40,000 images of Jupiter and its satellites during the 20-month mission.

Klaasen, K. P.↗
NASA NTRS2013

Analysis on H Spectral Shape During the Early 2012 SEPs with the PAMELA Experiment

The satellite-borne PAMELA experiment has been continuously collecting data since 2006.This apparatus is designed to study charged particles in the cosmic radiation. The combination of a permanent magnet, a silicon strip tracker and a silicon-tungsten imaging calorimeter, and the redundancy of instrumentation allow very precise studies on the physics of cosmic rays in a wide energy range and with high statistics. This makes PAMELA a very suitable instrument for Solar Energetic Particle (SEP) observations. Not only does its pan the energy range between the ground-based neutron monitor data and the observations of SEPs from space,but PAMELA also carries out the first direct measurements of the composition for the highest energy SEP events, including those causing Ground Level Enhancements (GLEs).In particular, PAMELA has registered many SEP events during solar cycle 24,offering unique opportunities to address the question of high-energy SEP origin. A preliminary analysis on proton spectra behaviour during this event is presented in this work.

Protons↗
NASA NTRS1994

Silicon sample holder for molecular beam epitaxy on pre-fabricated integrated circuits

The sample holder of the invention is formed of the same semiconductor crystal as the integrated circuit on which the molecular beam expitaxial process is to be performed. In the preferred embodiment, the sample holder comprises three stacked micro-machined silicon wafers: a silicon base wafer having a square micro-machined center opening corresponding in size and shape to the active area of a CCD imager chip, a silicon center wafer micro-machined as an annulus having radially inwardly pointing fingers whose ends abut the edges of and center the CCD imager chip within the annulus, and a silicon top wafer micro-machined as an annulus having cantilevered membranes which extend over the top of the CCD imager chip. The micro-machined silicon wafers are stacked in the order given above with the CCD imager chip centered in the center wafer and sandwiched between the base and top wafers. The thickness of the center wafer is about 20% less than the thickness of the CCD imager chip. Preferably, four titanium wires, each grasping the edges of the top and base wafers, compress all three wafers together, flexing the cantilever fingers of the top wafer to accommodate the thickness of the CCD imager chip, acting as a spring holding the CCD imager chip in place.

Hoenk, Michael E.↗
DOE OSTI2021

Mass Spectrometry Imaging of Bio‐oligomer Polydispersity in Plant Tissues by Laser Desorption Ionization from Silicon Nanopost Arrays

Abstract Mass spectrometry imaging (MSI) enables simultaneous spatial mapping for diverse molecules in biological tissues. Matrix‐assisted laser desorption ionization (MALDI) mass spectrometry (MS) has been a mainstream MSI method for a wide range of biomolecules. However, MALDI‐MSI of biological homopolymers used for energy storage and molecular feedstock is limited by, e.g., preferential ionization for certain molecular classes. Matrix‐free nanophotonic ionization from silicon nanopost arrays (NAPAs) is an emerging laser desorption ionization (LDI) platform with ultra‐trace sensitivity and molecular imaging capabilities. Here, we show complementary analysis and MSI of polyhydroxybutyric acid (PHB), polyglutamic acid (PGA), and polysaccharide oligomers in soybean root nodule sections by NAPA‐LDI and MALDI. For PHB, number and weight average molar mass, polydispersity, and oligomer size distributions across the tissue section and in regions of interest were characterized by NAPA‐LDI‐MSI.

Samarah, Laith Z.↗
NASA NTRS2008

Preliminary Quantification of Image Color Gradient on Genesis Concentrator Silicon Carbine Target 60001

The Genesis spacecraft concentrator was a device to focus solar wind ions onto a 6-cm diameter target area, thus concentrating the solar wind by 20X [1]. The target area was comprised of 4 quadrants held in place by a gold-coated stainless steel "cross" (Fig. 1). To date, two SiC and one chemical vapor deposited (CVD) quadrants have been imaged at 5X using a Leica DM-6000M in autoscan mode. Complete imaging of SiC sample 60001 required 1036 images. The mosaic of images is shown in Fig. 2 and position of analyzed areas in Fig. 3. This mosaic imaging is part of the curatorial documentation of surface condition and mapping of contamination. Higher magnification (50X) images of selected areas of the target and individual contaminant particles are compiled into reports which may be requested from the Genesis Curator [2].

Allton, J. H.↗
NASA NTRS2009

Structure for implementation of back-illuminated CMOS or CCD imagers

A structure for implementation of back-illuminated CMOS or CCD imagers. An epitaxial silicon layer is connected with a passivation layer, acting as a junction anode. The epitaxial silicon layer converts light passing through the passivation layer and collected by the imaging structure to photoelectrons. A semiconductor well is also provided, located opposite the passivation layer with respect to the epitaxial silicon layer, acting as a junction cathode. Prior to detection, light does not pass through a dielectric separating interconnection metal layers.

Pain, Bedabrata↗
NASA NTRS1985

EBIC Characterization and Hydrogen Passivation in Silicon Sheet

As a general qualitative tool, the electron beam induced current (EBIC) method can be very useful in imaging recombination in silicon sheet used for solar cells. Work using EBIC on EFG silicon ribbon is described. In particular, some efforts at making the technique more quantitative and hence more useful, some limitations of the method, and finally specific application to hydrogen passivation is treated. Some brief remarks are made regarding the technique itself.

Hanoka, J. I.↗
DOE OSTI2025

Computing virtual dark-field X-ray microscopy images of complex discrete dislocation structures from large-scale molecular dynamics simulations

Dark-field X-ray microscopy (DFXM) is a novel diffraction-based imaging technique that non-destructively maps the local deformation from crystalline defects in bulk materials. While studies have demonstrated that DFXM can spatially map 3D defect geometries, it is still challenging to interpret DFXM images of the high-dislocation-density systems relevant to macroscopic crystal plasticity. This work develops a scalable forward model to calculate virtual DFXM images for complex discrete dislocation structure(s) (DDS) obtained from atomistic simulations. Our new DDS-DFXM model integrates a non-singular formulation for calculating the local strain from the DDS and an efficient geometrical optics algorithm for computing the DFXM image from the strain field. We apply the model to complex DDS obtained from a large-scale mol­ecular dynamics simulation of compressive loading on single-crystal silicon. Simulated DFXM images exhibit prominent contrast for dislocation features between the multiple slip systems, demonstrating the potential of DFXM to resolve features from dislocation multiplication. In conclusion, the integrated DDS-DFXM model provides a toolbox for DFXM experimental design and image interpretation in the context of bulk crystal plasticity for a range of measurements across shock plasticity and the broader materials science community.

X-ray imaging↗
NASA NTRS2008

Real-Time Digital Radiography Upgrade

The objective of the task is to upgrade an existing real-time digital radiography system by replacing an aged image intensifier tube with an amorphous silicon digital x-ray imager. The real-time digital radiography system at GSFC is currently fitted with image intensifier tube with a 4 or 2 inch diameter active area with higher resolution at the smaller area. The image intensifier is exhibiting deterioration in sensitivity associated with extended use and is in need of replacement.

Parker, Bradford H.↗
NASA NTRS2002

Etching of Silicon in HBr Plasmas for High Aspect Ratio Features

Etching in semiconductor processing typically involves using halides because of the relatively fast rates. Bromine containing plasmas can generate high aspect ratio trenches, desirable for DRAM and MEMS applications, with relatively straight sidewalk We present scanning electron microscope images for silicon-etched trenches in a HBr plasma. Using a feature profile simulation, we show that the removal yield parameter, or number of neutrals removed per incident ion due to all processes (sputtering, spontaneous desorption, etc.), dictates the profile shape. We find that the profile becomes pinched off when the removal yield is a constant, with a maximum aspect ratio (AR) of about 5 to 1 (depth to height). When the removal yield decreases with increasing ion angle, the etch rate increases at the comers and the trench bottom broadens. The profiles have ARs of over 9:1 for yields that vary with ion angle. To match the experimentally observed etched time of 250 s for an AR of 9:1 with a trench width of 0.135 microns, we find that the neutral flux must be 3.336 x 10(exp 17)sq cm/s.

Hwang, Helen H.↗
DOE OSTI2023

Plasma Focused Ion Beam Nanothermometry

In this report we detail demonstration of temperature dependent effects on grayscale intensity imaged in Focused Ion Beam (FIB) microscope, as well as secondary electron (SE) dependence on temperature in the Auger Electron Spectroscopy (AES) and a Scanning Electron Microscope (SEM). In each instrument an intrinsic silicon sample is imaged at multiple temperatures over the course of each experiment. The grayscale intensity is shown to scale with sample temperature. Sample preparation procedures are discussed, along with hypothesized explanations for unsuccessful trials. Anticipated outcomes and future directions for these measurements are also detailed.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2024

Zero-Power Analog Optical Processing

The motivation behind this research is the growing challenge of handling the massive amounts of data generated by modern imaging systems. Conventional digital image processing techniques are struggling to keep pace with the demands of high-resolution and high-speed imaging systems for remote sensing due to their high-power consumption and data storage requirements. We present a novel approach based on analog photonics to address this challenge. The proposed system utilizes a silicon-photonics-based image encoder positioned after image formation and initial optical-to-electrical conversion. The photonic encoder compresses image data using a passive disordered photonic structure to perform kernel-type random projections of the raw data. The compressed data is then processed by a back-end neural network, which reconstructs the original image with high fidelity (structural similarity exceeding 90%). Our proposed approach has the potential to compress images with ~ 1000X lower power consumption compared to digital approaches with data rates exceeding 1 terapixel/second.

97 MATHEMATICS AND COMPUTING↗