Bulk NdNi O 2 is thermodynamically unstable with respect to decomposition while hydrogenation reduces the instability and transforms it from metal to insulator
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We present a theoretical model of the quasi-static magnetic field generation in a laser channel, which is formed behind the front of a short laser pulse that ionises a gas. The generation of a magnetic field is caused by the appearance of the electron pressure anisotropy during tunnelling ionisation of atoms. In the considered case of subrelativistic laser light intensities, the generated magnetic field can reach ∼1 MG with an energy transformation ratio of about 1 %, which paves the way for identifying the proposed mechanism when use is made of a wide class of ultrashort pulse lasers. (interaction of laser radiation with matter. laser plasma)
Significance We report signatures of a new phenomenon wherein a hidden “interdimensional” order emerges from a bulk three-dimensional superconductor tuned to approach a phase transition to an insulator. Prior electrical transport measurements found that the superconductor–insulator transition of BaPb 1− x Bi x O 3 demonstrated critical scaling behavior but inexplicably required parameters consistent only with two dimensions. Here, we directly image the three-dimensional superconducting state as it approaches an insulating phase and discover that signatures of a two-dimensional granular superconducting phase spontaneously emerge at the transition. Moreover, the properties of this phase precisely match the theory of emergent electronic granularity specific to two-dimensional materials. These findings posit that a three-dimensional superconductor electronically reorganizes itself into a two-dimensional granular superconductor before ultimately transforming to an insulator.
Here, we use ab initio calculations to study the role of stacking faults in connecting the high-temperature B2 and the theoretically predicted low-temperature B33 NiTi phases. In contrast with prior work, we describe the B 2 → B 33 phase transformation in terms of alternate bilayer shifts by 1 2 [100] on the ( 011 ) B 2 plane, obtaining a viable pathway; the same mechanism could also work with the B19 parent phase. We then examine B33-like structures built from alternate stacking sequences of B19 bilayers, constructed to have monoclinic tilt angles close to the experimentally reported NiTi B19' martensite, and find four low-energy stacking-fault variants with energies 5.8–8.5 meV/atom above the calculated B19' martensite structure, suggesting that such structures might appear as a part of the NiTi martensite phase at low temperatures. Investigating further the occurrence of specific coordinated planar shifts in NiTi systems, we report a dynamically stable NiTi B27 phase and find that it is only 1.2 meV/atom above the calculated B33 ground-state structure, thus having a potential to also play a role in NiTi martensitic phase transformation.
We probe the density-wave transition of the trilayer nickelate La 4 Ni 3 O 10 with polarization-resolved infrared spectroscopy. The low-energy electrodynamics is strongly anisotropic, with metallic in-plane and insulating out-of-plane character. In the ordered phase, the anisotropy grows more than an order of magnitude as the out-of-plane conductivity is sharply suppressed. We interpret this enhancement as an effective electronic decoupling of the Ni-O layers driven by a spin-density-wave-induced redistribution of Ni−𝑑 𝑧 2 occupation within the trilayers. This electronic response is accompanied by clearly shifting and splitting out-of-plane phonons, compatible with a density-wave instability of electronic origin.
Improvements in microscopy have enabled the acquisition of data at a scale that is difficult to process manually, making automated machine learning approaches to analyzing experimental images essential. In this project, we developed and applied machine learning (ML) workflows for atomic resolution scanning transmission electron microscopy (STEM) images. This development included improving both methodology as well as generating user-friendly codes. We developed machine learning architectures which, after training, automatically identify the location and types of defects throughout a material. We used these data to produce class-averaged images of 2D atomic coordinates with up to 0.3 pm precision, uncovering the structure and oscillations of long-range strain fields around point defects in WSe 2-2x Te 2x . We also resolved a long-standing problem in this field in the training of ML models, a lack of labeled experimental data, by developing a cycle-GAN that transformed simulated-generated labeled data into labeled data indistinguishable from experiment and therefore suitable for training. This removed the remaining parts of the ML data processing workflow where human intervention was still critical and therefore a bottleneck to working at scale. Codes have been developed and released for this full machine learning workflow. ML approaches to partially automate STEM acquisition were also developed. Finally we applied ML and other advanced data processing methods to several materials science problems in two-dimensional materials, including studying the evolution of hyperuniformity with defect concentration in WSe2, understanding phase transformations in transition metal dichalcogenides during in-situ heating in the STEM, and exploring how 2D interfaces transform from twisted into aligned structures.
Layered transition metal chalcogenides are promising hosts of electronic Weyl nodes and topological superconductivity. MoTe 2 is a striking example that harbors both noncentrosymmetric T d and centrosymmetric T’ phases, both of which have been identified as topologically nontrivial. Applied pressure tunes the structural transition separating these phases to zero temperature, stabilizing a mixed T d –T’ matrix that entails a network of interfaces between the two nontrivial topological phases. Here, we show that this critical pressure range is characterized by distinct coherent quantum oscillations, indicating that the difference in topology between topologically nonvtrivial T d and T’ phases gives rise to an emergent electronic structure: a network of topological interfaces. A rare combination of topologically nontrivial electronic structures and locked-in transformation barriers leads to this counterintuitive situation, wherein quantum oscillations can be observed in a structurally inhomogeneous material. These results further open the possibility of stabilizing multiple topological phases coexisting with superconductivity.
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Abstract Superconducting niobium (Nb) thin films have recently attracted significant attention due to their utility for quantum information technologies. In the processing of Nb thin films, fluoride‐based chemical etchants are commonly used to remove surface oxides that are known to affect superconducting quantum devices adversely. However, these same etchants can also introduce hydrogen to form Nb hydrides, potentially negatively impacting microwave loss performance. Here, comprehensive materials characterization of Nb hydrides formed in Nb thin films as a function of fluoride chemical treatments is presented. In particular, secondary‐ion mass spectrometry, X‐ray scattering, and transmission electron microscopy reveal the spatial distribution and phase transformation of Nb hydrides. The rate of hydride formation is determined by the fluoride solution acidity and the etch rate of Nb 2 O 5, which acts as a diffusion barrier for hydrogen into Nb. The resulting Nb hydrides are detrimental to Nb superconducting properties and lead to increased power‐independent microwave loss in coplanar waveguide resonators. However, Nb hydrides do not correlate with two‐level system loss or device aging mechanisms. Overall, this work provides insight into the formation of Nb hydrides and their role in microwave loss, thus guiding ongoing efforts to maximize coherence time in superconducting quantum devices.
Atomic kinetic Monte Carlo simulations were used to model void superlattice formation under irradiation in molybdenum, driven by anisotropic diffusion of self-interstitial atoms. A change in the phase transformation mechanism from nucleation and growth to spinodal decomposition occurred with increasing dose rate, with both mechanisms leading to superlattice formation. Analysis of a rate-theory based analytical model showed that an observed change in the kinetics of vacancy accumulation, the appearance of a region of positive second derivative in the plot of average vacancy concentration versus time, was caused by the onset of spinodal instability. Further, the analytical model showed that for molybdenum and several other metals where void superlattice formation is commonly observed, the phase transformation likely occurs by nucleation and growth. However, nickel may offer the possibility of experimental observation of the transition between phase transformation mechanisms.
In this work, we present results from ramp compression experiments on high-purity Zr that show the α → ω, ω → β, as well as reverse β → ω phase transitions. Simulations with a multi-phase equation of state and phenomenological kinetic model match the experimental wave profiles well. While the dynamic α ! ! transition occurs ~ 9 GPa above the equilibrium phase boundary, the ω → β transition occurs within 0.9 GPa of equilibrium. We estimate that the dynamic compression path intersects the equilibrium ω – β line at P = 29:2 GPa, and T = 490 K. The thermodynamic path in the interior of the sample lies ~ 100 K above the isentrope at the point of the ω → β transition. Approximately half of this dissipative temperature rise is due to plastic work, and half is due to the non-equilibrium α → ω transition. The inferred rate of the α → ω transition is several orders of magnitude higher than that measured in dynamic diamond anvil cell (DDAC) experiments in an overlapping pressure range. We discuss a model for the influence of shear stress on the nucleation rate. We find that the shear stress s ji has the same effect on the nucleation rate as a pressure increase δP = cϵ ij s ji /(ΔV/V); where c is a geometric constant ~ 1 and, ϵ ij are the transformation shear strains. The small fractional volume change ΔV/V ≈ 0:1 at the α → ω transition amplifies the effect of shear stress, and we estimate that for this case δP is in the range of several GPa. Correcting our transition rate to a hydrostatic rate brings it approximately into line with the DDAC results, suggesting that shear stress plays a significant role in the transformation rate.
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The recent observation of superconductivity in Nd 0.8 Sr 0.2 NiO 2 calls for further investigation and optimization of the synthesis of this infinite-layer nickelate structure. Here, we present our current understanding of important aspects of the growth of the parent perovskite compound via pulsed laser deposition on SrTiO 3 (001) substrates and the subsequent topotactic reduction. We find that to achieve single-crystalline, single-phase superconducting Nd 0.8 Sr 0.2 NiO 2 , it is essential that the precursor perovskite Nd 0.8 Sr 0.2 NiO 3 thin film is stabilized with no visible impurity phases; in particular, a Ruddlesden–Popper-type secondary phase is often observed. We have further investigated the evolution of the soft-chemistry topotactic reduction conditions to realize full transformation to the infinite-layer structure with no film decomposition or formation of other phases. We find that capping the nickelate film with a subsequent SrTiO 3 layer provides an epitaxial template to the top region of the nickelate film, much like the substrate. Thus, for currently optimized growth conditions, we can stabilize superconducting single-phase Nd 0.8 Sr 0.2 NiO 2 (001) epitaxial thin films up to ~10 nm.
Infrared reflection spectra of thin (∼60 nm) Pb{sub 1−x} Sn{sub x}Te (x = 0.25, 0.53, 0.59) films grown by molecular beam epitaxy on GaAs/CdTe hybrid substrates have been measured at frequencies from 20 to 5500 cm{sup −1} and temperatures from 5 to 300 K. The spectra have been used to determine temperature-dependent transverse phonon and plasmon frequencies in the films, which has made it possible to identify a structural phase transition at T{sub C} ≈ 50 K. The plasma frequency of the films has been shown to increase with decreasing band gap on cooling from 300 to 77 K. The increase in plasma frequency is mainly attributable to the increase in carrier concentration and a transition of the carriers from vortex states on the film surface to the valence band. (paper)
Nb3Sn offers better RF performance (Q and Eacc) than Nb at any given temperature because of its superior superconducting properties. The potential deployment of Nb3Sn-coated SRF cavities at 4 K, delivering similar performance to that of Nb cavities at 2 K, will be a transformational technology to enable new classes of SRF accelerator applications. A clean and smooth surface can enhance the performance of the Nb3Sn-coated cavity, typically, the attainable acceleration gradient. The reduction of surface roughness is often linked with a correlative reduction in average coating thickness and grain size. A new approach to enhance the nucleation centers using the pre-deposition of Sn on Nb is introduced for surface roughness reduction. Besides Sn supply's careful tuning, the temperature profiles were varied to engineer the coating surface with reduced roughness as low as ~40 nm in 20 µm × 20 µm AFM scans, one-third that of the typical coating. Electropolishing of coated sample shows surface a clear surface smoothening. A few sets of coating parameters were used to coat 1.3 GHz sin-gle-cell cavities to understand the effects of roughness variation on the RF performance. This presentation discusses ways to reduce surface roughness with results from a systematic analysis of the samples and Nb3Sn-coated single-cell cavities.
Nb3Sn offers better RF performance (Q and Eacc) than Nb at any given temperature because of its superior superconducting properties. The potential deployment of Nb3Sn-coated SRF cavities at 4 K, delivering similar performance to that of Nb cavities at 2 K, will be a transformational technology to enable new classes of SRF accelerator applications. A clean and smooth surface can enhance the performance of the Nb3Sn-coated cavity, typically, the attainable acceleration gradient. The reduction of surface roughness is often linked with a correlative reduction in average coating thickness and grain size. A new approach to enhance the nucleation centers using the pre-deposition of Sn on Nb is introduced for surface roughness reduction. Besides Sn supply's careful tuning, the temperature profiles were varied to engineer the coating surface with reduced roughness as low as ~40 nm in 20 µm × 20 µm AFM scans, one-third that of the typical coating. Electropolishing of coated sample shows surface a clear surface smoothening. A few sets of coating parameters were used to coat 1.3 GHz sin-gle-cell cavities to understand the effects of roughness variation on the RF performance. This presentation discusses ways to reduce surface roughness with results from a systematic analysis of the samples and Nb3Sn-coated single-cell cavities.
The dynamics of a weakly anharmonic superconducting qubit in a complex electromagnetic environment is generally well described by an effective multimode Kerr Hamiltonian at sufficiently weak excitation. This Hamiltonian can be embedded in a master equation with losses determined by the details of the electromagnetic environment. Recent experiments indicate, however, that when a superconducting circuit is driven with microwave signals populating the system with sufficiently high excitations, the observed relaxation rates appear to be substantially different from expectations based on the electromagnetic environment of the qubit alone. This issue is a limiting factor in the optimization of superconducting qubit readout schemes. We claim here that an effective master equation with drive-power-dependent parameters is an efficient approach to model such quantum dynamics. In this sequence of papers, we derive effective master equations, whose parameters exhibit nonlinear dependence on the excitation level of the circuit as well as the electromagnetic environment of the qubit. Further, we show that the number nonconserving terms in the qubit nonlinearity generally lead to a renormalization of dissipative parameters of the effective master equation, while the number conserving terms give rise to a renormalization of the system frequencies. Here, in Paper I, we consider the excitation-relaxation dynamics of a transmon qubit that is prepared in a certain initial state, but is not driven otherwise. A unitary transformation technique is introduced to study the renormalization of (i) qubit relaxation due to coupling to a generic bath and (ii) Purcell decay. Analytic expressions are provided for the dependence of the nonlinear dissipative terms on the details of the electromagnetic environment of the qubit. The perturbation technique based on unitary transformations developed here is generalized to the continuously driven case in Paper II.
High-pressure metallic beta-Sn silicon (Si-II), depending on temperature, decompression rate, stress, etc., may transform to diverse metastable forms with promising semiconducting properties under decompression. However, the underlying mechanisms governing the different transformation paths are not well understood. Here, two distinctive pathways, viz., a thermally activated crystal-crystal transition and a mechanically driven amorphization, were characterized under rapid decompression of Si-II at various temperatures using in situ time-resolved x-ray diffraction. Under slow decompression, Si-II transforms to a crystalline bc8/r8 phase in the pressure range of 4.3-9.2 GPa through a thermally activated process where the overdepressurization and the onset transition strain are strongly dependent on decompression rate and temperature. In comparison, Si-II collapses structurally to an amorphous form at around 4.3 GPa when the volume expansion approaches a critical strain via rapid decompression beyond a threshold rate. The occurrence of the critical strain indicates a limit of the structural metastability of Si-II, which separates the thermally activated and mechanically driven transition processes. The results show the coupled effect of decompression rate, activation barrier, and thermal energy on the adopted transformation paths, providing atomistic insight into the competition between equilibrium and nonequilibrium pathways and the resulting metastable phases.