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This paper reports and analyzes recent single event effects (SEE) and total ionizing dose (TID) test results for the Analog Devices RH3845 synchronous current mode step-down controller. This device has been tested and evaluated for use in a harsh space radiation environment.
Teledyne’s PE99155 point-of-load buck regulator was tested to evaluate an applicationspecific question about the start-up behavior of the device. This test determined if accumulated total ionizing dose (TID) affected any start-up voltage transient characteristics. Testing was based on pass/fail criterial for the magnitude of the output voltage to ensure the safety of downstream electronics. Two sets of radiation tests were performed. The first group of PE99155s used a high dose rate (HDR) irradiation to 25 krad(Si). A second group of PE99155s used high dose rate irradiation to 30 krad(Si).
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The purpose of these tests was to characterize the susceptibility of the LSK389 and LSK489 Dual N-Channel JFET from Linear Systems to Single-Event Latchup due to heavy ions and to Total Ionizing Dose (TID) degradation at -65 °C and intermediate dose rate. The test was carried out to assess suitability of the amplifiers for the Ocean Color instrument (OCI) on the Plankton, Aerosol, Cloud, ocean Ecosystem (PACE) spacecraft.
The purpose of this test was to characterize the flight lot of Texas Instruments' LM193 (flight part number is 5962-9452601Q2A) for total dose response. This test served as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) was determined.
The purpose of this test was to characterize the Avalanche Technology ASV016204’s total dose response. In the test, the device was exposed to high dose rate (HDR) irradiations using gamma radiation. Device functionality (in terms of memory cell upsets and read/write ability) as well as power supply currents during various modes of operations were recorded.
The purpose of this test was to characterize the Micron MT29F128G08AJAAAs parameter degradation for total dose response and to evaluate and compare lot date codes for sensitivity. In the test, the device was exposed to both low dose and high dose rate (HDR) irradiations using gamma radiation. Device parameters such as leakage currents, quantity of upset bits and overall chip and die health were investigated to determine which lot is more robust.
The purpose of this test was to characterize the SI-5345, SY88422L, LT3482 and MSK130 parameter degradation for total dose response. The components are associated with REAG ID #21-024. In the test, each device was exposed to high dose rate (HDR) irradiation using gamma radiation. Device parameters such as leakage currents, timing, and overall chip health were investigated. These devices were tested for an interstellar mission on a trajectory between 0.9 AU and 5.3 AU with a 2.5-year mission, yielding an expected overall dose of 29 krad(Si)behind 1 mm of aluminum shielding (at 95% confidence; environment and dose determined through SPENVIS). This test report gives an initial look at candidate parts. Extremely small sample sizes (only 1 or 2 devices tested) do not allow consideration of part-to-part variability. High dose rates were used despite LT3482 and MSK130 having potential enhanced low dose rate sensitivity (ELDRS). Care should be taken in interpreting results given these limitations.
The purpose of this test was to characterize the Philips/NXP BFR92A NPN 5 gigahertz wide band silicon transistor for total dose response. This test shall serves as the radiation lot acceptance test (RLAT) for the lot date code (LDC) 1027. The BFR92A is packaged in a 3-pin plastic SOT23 package. Low dose rate (LDR/ELDRS) irradiations was performed.
The purpose of this test was to characterize the Analog Devices ADXL354 parameter degradation for total dose response. In the test, the device was exposed to a dose rate of 50 rad(Si)/s or 0.5 Gy(Si)/s using a gamma radiation source in accordance with MIL-STD-883K Paragraph 3.6.1 (Condition A). Device parameters such as supply current, self-test voltage response, and LDO regulator output voltages were monitored.
The purpose of this testing is to characterize the ISSI IS46DR16640B-25DBA25 parameter degradation for total dose response. This test’s purpose is to evaluate and compare lot date codes for sensitivity. In the test, the device is exposed to both low dose and high dose rate (HDR) irradiations using gamma radiation. Device parameters such as leakage currents, quantity of upset bits or addresses, and overall chip and die health are investigated to determine which lot is more robust. These parameters directly affect the functionality of the memory within a system and may determine thresholds necessary to mitigate failure.
The purpose of this test was to validate the Intersil HSYE-117RH-Q flight lot for use in the fabrication of Europa Clipper Propulsion subsystem flight hardware. This test shall serve as the radiation lot acceptance test (RLAT) for the flight lot date with wafer lot number G3X3CQC and lot date code (LDC) 1830. Low dose rate (LDR) irradiations have been performed by the manufacturer, but only to 100 krad(Si). This test determined the enhanced low dose rate sensitivity (ELDRS) of the device up to the mission specific dose of 125 krad(Si).
This paper discusses total dose effects on voltage-to-frequency converters which impose different requirements on internal circuitry, and are also very high-precision devices (for example, linearity is typically specified between 0.002 and 0.05%).
A Radiation Lot Acceptance Test was performed on the AD620SQ/883B, Lot 1708D, in accordance with MIL-STD-883, Method 1019, Condition D. Using a Co-60 source 4 biased parts and 4 unbiased parts were irradiated at 10 mrad/s (0.036 krad/hr) in intervals of approximately 1 krad from 3-10 krads, and ones of 5 krads from 10-25 krads, where it was annealed while unbiased at 25 degrees Celsius, for 2 days, and then, subsequently, annealed while biased at 25 degrees celsius, for another 7 days.
The purpose of this test was to validate the Intersil HSYE-117RH-Q flight lot for use in the fabrication of Europa Clipper Propulsion subsystem flight hardware. This test shall serve as the radiation lot acceptance test (RLAT) for the flight lot date with wafer lot number G3X3CQC and lot date code (LDC) 1830. Low dose rate (LDR) irradiations have been performed by the manufacturer, but only to 100 krad(Si). This test was a follow-on to the original Radiation Lot-Specific Acceptance Testing (RLAT) performed on this LDC. Application-specific load currents were used for the line regulation and load regulation measurements. All other parameters were measured with standard bias conditions as specified in the datasheet.
This paper reports total dose radiation test results for high resolution 12-/14-bit A/D converters. Small changes in internal components can cause these devices to fail their specifications at relatively low total dose levels. Degradation of signal-to-noise ratio becomes increasingly importamt for high accuracy converters. Rebound effects in the thick-oxide MOS devices causes these responses to be different at low and high dose rates, which is a major concern for space applications.
64Mb 3.3V CMOS DRAMs from two different manufacturers were tested for total dose. Retention time, power supply current, and functionality were used to characterize device response.
This paper reports single-event latchup and total dose results for a variety of analog to digital converters targeted for possible use in NASA spacecraft's. The compendium covers devices tested over the last 15 years.