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Multichannel X-Band Dielectric-Resonator Oscillator
A multichannel dielectric-resonator oscillator (DRO), built as a prototype of a local oscillator for an X-band transmitter or receiver, is capable of being electrically tuned among and within 26 adjacent frequency channels, each 1.16 MHz wide, in a band ranging from 7,040 to 7,070 GHz. The tunability of this oscillator is what sets it apart from other DROs, making it possible to use mass-produced oscillator units of identical design in diverse X-band applications in which there are requirements to use different fixed frequencies or to switch among frequency channels. The oscillator (see figure) includes a custom-designed voltage-controlled-oscillator (VCO) monolithic microwave integrated circuit (MMIC), a dielectric resonator disk (puck), and two varactor-coupling circuits, all laid out on a 25-mil (0.635-mm)-thick alumina substrate having a length and width of 17.8 mm. The resonator disk has a diameter of 8.89 mm and a thickness of 4.01 mm. The oscillator is mounted in an 8.9-mm-deep cavity in a metal housing. The VCO MMIC incorporates a negative- resistance oscillator amplifier along with a buffer amplifier. The resonator disk is coupled to a microstrip transmission line connected to the negative-resistance port of the VCO MMIC. The two varactor-coupling circuits include microstrip lines, laid out orthogonally to each other, for coupling with the resonator disk. Each varactor microstrip line is DC-coupled to an external port via a microwave choke. One varactor is used for coarse tuning to select a channel; the other varactor is used (1) for fine tuning across the 1.16-MHz width of each channel and (2) as a feedback port for a phase-lock loop. The resonator disk is positioned to obtain (1) the most desirable bandwidth, (2) relatively tight coupling with the microstrip connected to the coarse-tuning varactor, and (3) relatively loose coupling with the microstrip connected to the fine-tuning varactor. Measurements of performance showed that the oscillator can be switched among any of the 26 channels and can be phase-locked to a nominal frequency in any channel. The degree of nonlinearity of tuning was found not to exceed 2.5 percent. The tuning sensitivity was found to be 6.15 MHz/V at a bias offset of -2 V on the phase-lock-loop varactor. The phase noise of the oscillator in free-running operation was found to be -107 dBc/Hz (where dBc signifies decibels relative to the carrier signal) at 100 kHz away from the carrier frequency.
Theoretical performance of novel multipliers at millimeter and submillimeter wavelengths
A theoretical comparison of various low and high order multipliers for 200 GHz and 1 THz has been carried out. Novel diodes including single barrier varactors, barrier-intrinsic-n(+)diodes and high electron mobility varactors are shown to have excellent theoretical performance, comparable or better than the conventional Schottky varactors for single and double diode frequency multipliers at millimeter and submillimeter wavelengths, whereas quantum well diodes, since they suffer from high resistive losses, are shown to be less attractive. In comparison to the conventional Schottky varactor, these new diodes have some potential advantages in their characteristics such as a stronger nonlinearity or a special symmetry. For future optimization some general comments on these advantages as well as other factors affecting multiplication are given.
Topics in the optimization of millimeter-wave mixers
This report is in three parts: 1. In the first part a user-oriented computer program for the analysis of single-ended Schottky diode mixers is described. The program is used to compute the performance of a 140-220 GHz mixer and excellent agreement with measurements at 150 and 180 GHz is obtained. A sensitivity analysis indicates the importance of various diode and mount characteristics on the mixer performance. 2. The second part of this report describes a computer program for the analysis of varactor diode multipliers. The diode may operate in either the reverse biased varactor mode or with substantial forward current flow where the conversion mechanism is predominantly resistive. In addition, a design for a varactor diode doubler, tunable over an output frequency range of 150-220 GHz, is given. The doubler has 10-20% conversion efficiency with an instantaneous bandwidth of 3%. 3. The third section of this report contains a description and analysis of i new H-plane rectangular waveguide transformer. The transformer can be made luckily and easily in split-block waveguide using a standard slitting saw. It is particularly suited for use in the millimeter-wave band, replacing conventional electroformed stepped transformers. A theoretical analysis of the transformer is given, and good agreement is obtained with measurements made at X-band. Design curves are included for transitions which have a VSWR <1.2 over a full waveguide band when the impedance ratio is as high as 4 to 1.
Solid-state microwave electronics
Solid state microwave electronics developments on range techniques, high power varactor multipliers, and computer design of varactor circuits
Quasioptical circuits relating to frequency multipliers.
Description of the various major components useful in a 30- to 60-GHz varactor doubler circuit employing quasi-optical techniques. A description is given of the required directional filters, waveguide tuners, and varactor mounts. An attempt is made to determine the potential efficiency of various quasi-optical multiplier mounts and also to compare the efficiency obtainable by quasi-optical techniques with that achievable in standard-waveguide multiplier mounts.
Modulation linearization of a frequency-modulated voltage controlled oscillator, part 3
An analysis is presented for the voltage versus frequency characteristics of a varactor modulated VHF voltage controlled oscillator in which the frequency deviation is linearized by using the nonlinear characteristics of a field effect transistor as a signal amplifier. The equations developed are used to calculate the oscillator output frequency in terms of pertinent circuit parameters. It is shown that the nonlinearity exponent of the FET has a pronounced influence on frequency deviation linearity, whereas the junction exponent of the varactor controls total frequency deviation for a given input signal. A design example for a 250 MHz frequency modulated oscillator is presented.
Frequency modulated oscillator
A frequency modulated push-pull oscillator in which the non-linear characteristic of varactors producing frequency modulation is compensated for by an opposite non-linear characteristic of a field effect transistor providing modulating bias to the varactors is described.
Maser cavity servo-tuning system
Two collocated, weakly coupled probes, one loop and one dipole, detect the magnetic and electric fields inside a maser cavity. Signals from the probes are compared in phase, and the signal output from the phase detector is applied to a varactor, the reactance of which is coupled into the cavity by a microwave coupler. Alternatively, the varactor may be placed inside the cavity. Any deviation of phase from 90 deg as detected by the phase detector will then produce an error signal that will change the reactance coupled into the resonant cavity to change its reactance, and thus correct its resonance frequency. An alternative to using two probes is to use a single disk probe oriented to detect both the magnetic and electric fields, and thus provide the error signal directly.
Millimeter-wave diode-grid frequency doubler
Monolithic diode grids were fabricated on 2-cm square gallium-arsenide wafers in a proof-of-principle test of a quasi-optical varactor millimeter-wave frequency multiplier array concept. An equivalent circuit model based on a transmission-line analysis of plane wave illumination was applied to predict the array performance. The doubler experiments were performed under far-field illumination conditions. A second-harmonic conversion efficiency of 9.5 percent and output powers of 0.5 W were achieved at 66 GHz when the diode grid was pumped with a pulsed source at 33 GHz. This grid had 760 Schottky-barrier varactor diodes. The average series resistance was 27 ohms, the minimum capacitance was 18 fF at a reverse breakdown voltage of -3 V. The measurements indicate that the diode grid is a feasible device for generating watt-level powers at millimeter frequencies and that substantial improvement is possible by improving the diode breakdown voltage.
Submillimeter sources for radiometry using high power Indium Phosphide Gunn diode oscillators
A study aimed at developing high frequency millimeter wave and submillimeter wave local oscillator sources in the 60-600 GHz range was conducted. Sources involved both fundamental and harmonic-extraction type Indium Phosphide Gunn diode oscillators as well as varactor multipliers. In particular, a high power balanced-doubler using varactor diodes was developed for 166 GHz. It is capable of handling 100 mW input power, and typically produced 25 mW output power. A high frequency tripler operating at 500 GHz output frequency was also developed and cascaded with the balanced-doubler. A dual-diode InP Gunn diode combiner was used to pump this cascaded multiplier to produce on the order of 0.5 mW at 500 GHz. In addition, considerable development and characterization work on InP Gunn diode oscillators was carried out. Design data and operating characteristics were documented for a very wide range of oscillators. The reliability of InP devices was examined, and packaging techniques to enhance the performance were analyzed. A theoretical study of a new class of high power multipliers was conducted for future applications. The sources developed here find many commercial applications for radio astronomy and remote sensing.
A submillimeter tripler using a quasi-waveguide structure
A new type of frequency multiplier structure is being developed which is suitable for application at frequencies above 1 THz. This structure preserves some of the properties of waveguide for mode control, yet is not truly single mode. The device resembles a sectoral horn, with a varactor diode mounted near the throat. Input and output coupling are through the same aperture, requiring a quasi-optical diplexer. Initial tests are directed at building a tripler at 500 GHz, for comparison with waveguide structures. The diplexer is a blazed diffraction grating with appropriate focusing optics. Model studies show that the impedance match to a varactor should be good, and initial tests of the beam patterns of the prototype indicate that optical coupling efficiency should be very high. The structure also has the potential for use as a fundamental mixer, or as a third harmonic mixer.
Monolithic millimeter-wave diode grid frequency multiplier arrays
Monolithic diode frequency multiplier arrays, including barrier-N-N(+) (BNN) doubler, multi-quantum-barrier-varactor (MQBV) tripler, Schottky-quantum-barrier-varactor (SQBV) tripler, and resonant-tunneling-diode (RTD) tripler arrays, have been successfully fabricated with yields between 85 and 99 percent. Frequency doubling and/or tripling have been observed for all the arrays. Output powers of 2.4-2.6 W (eta = 10-18 percent) at 66 GHz with the BNN doubler and 3.8-10 W (eta = 1.7-4 percent) at 99 GHz with the SQBV tripler have been achieved.
Frequency multipliers for millimeter and submillimeter wavelengths
All-solid-state local oscillators in the terahertz frequency range are especially needed for space-borne radio astronomy and remote sensing of the atmosphere. Because solid-state oscillators cannot yet produce the necessary local oscillator power at submillimeter wavelengths, frequency multipliers are needed. So far, submillimeter-wave frequency multipliers are mainly based on a whisker-contacted Schottky diode as the nonlinear element. This paper discusses the multiplier theory and tools for analysis and design of millimeter- and submillimeter-wave multipliers. Experimental work is reviewed. The Schottky diode model at submillimeter frequencies, use of Schottky multiplier chains versus direct higher-order multipliers, and the effect of cooling on Schottky diode multipliers are discussed. Alternative diodes such as the high electron mobility varactor, the barrier-intrinsic n(+) diode, the barrier-n-n(+) diode, the quantum well diode, and the single barrier varactor are discussed, with attention also given to their potential as submillimeter frequency multipliers.
Wideband Linear Phase Modulator
Phase modulator for transmission in X band provides large phase deviation that remains nearly linear with voltage over relatively wide range. Operates with low loss over wide frequency band and with stable characteristics over wide temperature range. Phase modulator contains two varactor-diode phase shifters coupled via circulators. Separate drive circuit applies modulating voltages to varactor diodes. Modulation voltages vary in accordance with input to drive circuit.
Thin Film Multilayer Conductor/Ferroelectric Tunable Microwave Components for Communication Applications
High Temperature Superconductor/Ferroelectric (HTS/FE ) thin film multilayered structures deposited onto dielectric substrates are currently being investigated for use in low loss, tunable microwave components for satellite and ground based communications. The main goal for this technology is to achieve maximum tunability while keeping the microwave losses as low as possible, so as to avoid performance degradation when replacing conventional technology (e.g., filters and oscillators) with HTS/FE components. Therefore, for HTS/FE components to be successfully integrated into current working systems, full optimization of the material and electrical properties of the ferroelectric films, without degrading those of the HTS film; is required. Hence, aspects such as the appropriate type of ferroelectric and optimization of the deposition conditions (e.g., deposition temperature) should be carefully considered. The tunability range as well as the microwave losses of the desired varactor (i.e., tunable component) are also dependent on the geometry chosen (e.g., parallel plate capacitor, interdigital capacitor, coplanar waveguide, etc.). In addition, the performance of the circuit is dependent on the location of the varactor in the circuit and the biasing circuitry. In this paper, we will present our results on the study of the SrTiO3/YBa2Cu3O(7-delta)/LaAl03 (STO/YBCO/LAO) and the Ba(x)Sr(1-x)TiO3/YBa2Cu3O(7-delta)/LaAl03(BSTO/YBCO/ILAO) HTS/FE multilayered structures. We have observed that the amount of variation of the dielectric constant upon the application of a dc electric field is closely related to the microstructure of the film. The largest tuning of the STO/YBCO/LAO structure corresponded to single-phased, epitaxial STO films deposited at 800 C and with a thickness of 500 nm. Higher temperatures resulted in interfacial degradation and poor film quality, while lower deposition temperatures resulted in films with lower dielectric constants, lower tunabilities, and higher losses. For STO/LAO multilayer structures having STO film of similar quality we have observed that interdigital capacitor configurations allow for higher tunabilities and lower losses than parallel plate configurations, but required higher dc voltage. Results on the use of these geometries in working microwave components such as filters and stabilizing resonators for local oscillators (LO) will be discussed.
RF MEMS and Their Applications in NASA's Space Communication Systems
Radio frequency (RF) and microwave communication systems rely on frequency, amplitude, and phase control circuits to efficiently use the available spectrum. Phase control circuits are required for electronically scanning phase array antennas that enable radiation pattern shaping, scanning, and hopping. Two types of phase shifters, which are the phase control circuits, are most often used. The first is comprised of two circuits with different phase characteristics such as two transmission lines of different lengths or a high pass and low pass filter and a switch that directs the RF power through one of the two circuits. Alternatively, a variable capacitor, or varactor, is used to change the effective electrical path length of a transmission line, which changes the phase characteristics. Filter banks are required for the diplexer at the front end of wide band communication satellites. These filters greatly increase the size and mass of the RF/microwave systems, but smaller diplexers may be made with a low loss varactor or a group of capacitors, a switch and an inductor.