Search NASA⌕ Search

SEARCH · Search NASA

Results for “charged defects”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Electrical conduction of LiF interlayers in organic diodes

An interlayer of LiF in between a metal and an organic semiconductor is commonly used to improve the electron injection. Here, we investigate the effect of moderate bias voltages on the electrical properties of Al/LiF/poly(spirofluorene)/Ba/Al diodes by systematically varying the thickness of the LiF layer (2-50 nm). Application of forward bias V below the bandgap of LiF (V < E{sub g} ∼ 14 V) results in reversible formation of an electrical double layer at the LiF/poly(spirofluorene) hetero-junction. Electrons are trapped on the poly(spirofluorene) side of the junction, while positively charged defects accumulate in the LiF with number densities as high as 10{sup 25}/m{sup 3}. Optoelectronic measurements confirm the built-up of aggregated, ionized F centres in the LiF as the positive trapped charges. The charged defects result in efficient transport of electrons from the polymer across the LiF, with current densities that are practically independent of the thickness of the LiF layer.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2010

Mechanism of Proton Transport in Proton Exchange Membranes: Insights from Computer Simulation

The solvation and transport of hydrated protons in proton exchange membranes (PEMs) such as NafionTM will be described using a novel multi-state reactive molecular dynamics (MD) approach, combined with large scale MD simulation to help probe various PEM morphological models. The multi-state MD methodology allows for the treatment of explicit (Grotthuss) proton shuttling and charge defect delocalization which, in turn, can strongly influence the properties of the hydrated protons in various aqueous and complex environments. A significant extension of the methodology to treat highly acidic (low pH) environments such as the hydrophilic domains of a PEM will be presented. Recent results for proton solvation and transport in NafionTM will be described which reveal the significant role of Grotthuss shuttling and charge defect delocalization on the excess proton solvation structures and transport properties. The role of PEM hydration level and morphology on these properties will also be described.

08 HYDROGEN↗
DOE OSTI2015

Native defect induced charge and ferromagnetic spin ordering and coexisting electronic phases in CoO epitaxial thin film

We report on the observation of Co vacancy (V{sub Co}) induced charge ordering and ferromagnetism in CoO epitaxial thin film. The ordering is associated with the coexistence of commensurate, incommensurate, and discommensurate electronic phases. Density functional theory calculation indicates the origin of ordering in Co atoms undergoing high spin to low spin transition immediately surrounding the V{sub Co(16.6 at. %)}. Electron magnetic chiral dichroism experiment confirms the ferromagnetic signal at uncompensated Co spins. Such a native defects induced coexistence of different electronic phases at room temperature in a simple compound CoO is unique and adds to the richness of the field with the possibility of practical device application.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Real-space visualization of a defect-mediated charge density wave transition

Here, we study the coupled charge density wave (CDW) and insulator-to-metal transitions in the 2D quantum material 1T-TaS 2 . By applying in situ cryogenic 4D scanning transmission electron microscopy with in situ electrical resistance measurements, we directly visualize the CDW transition and establish that the transition is mediated by basal dislocations (stacking solitons). We find that dislocations can both nucleate and pin the transition and locally alter the transition temperature T c by nearly ~75 K. This finding was enabled by the application of unsupervised machine learning to cluster five-dimensional, terabyte scale datasets, which demonstrate a one-to-one correlation between resistance—a global property—and local CDW domain-dislocation dynamics, thereby linking the material microstructure to device properties. This work represents a major step toward defect-engineering of quantum materials, which will become increasingly important as we aim to utilize such materials in real devices.

4D-STEM↗
DOE OSTI2011

Analysis of the Junction Properties of CdS/CdTe Devices in Substrate and Superstrate Configurations

The best efficiency of CdS/CdTe devices fabricated in the substrate configuration reported to date is about 8%, which is about half the 17.3% reported for the conventional superstrate configuration. The performance of substrate devices is affected by lower open-circuit voltage (Voc), about 700 mV, and low fill factor (FF), which indicates that these devices are primarily limited by non-idealjunction properties and possibly by the ohmic contact to CdTe. In our study of the junction properties of superstrate devices, we show that lower-Voc devices (< 720 mV) with SnO2/CdTe and CdS/CdTe structures are true heterojunction devices. High charged defect density at the heterointerfaces is present in the depletion region and contributes to the dark current density, thereby reducingVoc. On the other hand, for higher-performance devices with Voc > 800 mV, the junction is between an n-type, Te-rich CdSTe alloy with a bandgap of 1.45 eV and p-type CdTe with a bandgap of 1.5 eV. Because the crystal structure of both the Te-rich alloy and the CdTe is cubic zinc blende, and the lattice mismatch between the two is minimal, the device in this case can be considered aquasi-homojunction. These higher-Voc devices are therefore affected less by the high charged defect density at the hetero-interface, which lies outside of the depletion region. We present analysis of the junction properties of our recent and improved substrate-configuration devices with Voc well in excess of 800 mV, FF approaching 60%, and efficiencies around 10%. We also compare devicesfabricated in both the substrate and superstrate configurations and with comparable Voc in the range of 700 to more than 800 mV. Photoluminescence (PL) and temperature-dependent PL, current density-voltage and quantum efficiency analysis, and modulated reflectance measurements are used to study device properties.

14 SOLAR ENERGY↗
DOE OSTI2011

Proton Solvation and Transport in Hydrated Nafion

Proton solvation properties and transport mechanisms have been studied in hydrated Nafion using the self-consistent multistate empirical valence bond (SCI-MS-EVB) method that includes the effects excess proton charge defect delocalization and Grotthuss proton hopping. It was found that sulfonate groups influence excess proton solvation, as well as the proton hydration structure, by stabilizing a more Zundel-like (H 5 O 2 + ) structure in their first solvation shells. Hydrate proton-related hydrogen bond networks were observed to be more stable than networks with water alone. Diffusion rates, Arrhenius activation energies, and transport pathways were calculated and analyzed to characterize the nature of the proton transport. Diffusion rate analysis suggests that a proton-hopping mechanism dominates the proton transport for the studied water loading levels and that there is a clear degree of anticorrelation with the vehicular transport. The activation energy drops quickly with an increasing water content when the water loading level is smaller than ~10 H 2 O/SO 3 – , which is consistent with experimental observations. The sulfonate groups were also found to affect the proton hopping directions. The temperature and water content effects on the proton transport pathways were also investigated.

Feng, Shulu↗
DOE OSTI2017

Adsorption and Photodesorption of CO from Charged Point Defects on TiO 2 (110)

Adsorption and photodesorption of weakly-bound carbon monoxide, CO, from reduced and hydroxylated rutile TiO2(110) (r- and h- TiO2(110)) at sub-monolayer coverages is studied with atomically-resolved scanning tunneling microscopy (STM) along with ensemble-averaged temperature-programmed desorption (TPD) and angle-resolved photon-stimulated desorption (PSD) at low temperatures ( 50 K). STM data weighted by the concentration of each kind of adsorption sites on r-TiO2(110) give an adsorption probability which is the highest for the bridging oxygen vacancies (VO) and very low for the Ti5c sites closest to VO. Occupancy of the remaining Ti5c sites with CO is significant, but smaller than for VO. The probability distribution for the different adsorption sites corresponds to a very small difference in CO adsorption energies: < 0.02 eV. We also find that UV irradiation stimulates both diffusion and desorption of CO at low temperature. CO photodesorbs primarily from the vacancies with a bi-modal angular distribution. In addition to a major, normal to the surface component, there is a broader cosine component indicating scattering from the surface which likely also leads to photo-stimulated diffusion. Hydroxylation of VO’s does not significantly change the CO PSD yield and angular distribution, indicating that not atomic but rather electronic surface defects are involved in the site-specific PSD process. We suggest that photodesorption can be initiated by recombination of photo-generated holes with excess unpaired electrons localized near the surface point-defect (either VO or bridging hydroxyl), leading to the surface atoms rearrangement and ejection of the weakly-bound CO molecules.

Environmental Molecular Sciences Laboratory↗
DOE OSTI2019

Defects in Highly Anisotropic Transition-Metal Dichalcogenide PdSe 2

The atomic and electronic structures of the pristine PdSe 2 as well as various intrinsic vacancy defects in PdSe 2 are studied comprehensively by combining scanning tunneling microscopy, spectroscopy and density functional theory calculations. Other than the topmost Se atoms, sublayer Pd atoms, the intrinsic Pd and Se vacancy-defects are identified. Both V Se and V Pd defects induce defect states near Fermi level. As a result, the vacancy defects can be negatively charged by tip gating effect. At negative sample bias, the screened Coulomb interaction between STM tip and the charged vacancies creates disk-like protrusion around V Pd and crater-like features around V Se . The magnification effect of the long-range charge localization at the charged defect site makes sublayer defects as deep as 1nm visible even in STM images. In conclusion, this result proves that by gating the probe, scanning probe microscopy can be used as an easy tool for characterizing sublayer defects in a nondestructive way.

36 MATERIALS SCIENCE↗
DOE OSTI2023

High-throughput calculations of charged point defect properties with semi-local density functional theory—performance benchmarks for materials screening applications

Abstract Calculations of point defect energetics with Density Functional Theory (DFT) can provide valuable insight into several optoelectronic, thermodynamic, and kinetic properties. These calculations commonly use methods ranging from semi-local functionals with a-posteriori corrections to more computationally intensive hybrid functional approaches. For applications of DFT-based high-throughput computation for data-driven materials discovery, point defect properties are of interest, yet are currently excluded from available materials databases. This work presents a benchmark analysis of automated, semi-local point defect calculations with a-posteriori corrections, compared to 245 “gold standard” hybrid calculations previously published. We consider three different a-posteriori correction sets implemented in an automated workflow, and evaluate the qualitative and quantitative differences among four different categories of defect information: thermodynamic transition levels, formation energies, Fermi levels, and dopability limits. We highlight qualitative information that can be extracted from high-throughput calculations based on semi-local DFT methods, while also demonstrating the limits of quantitative accuracy.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Neutron irradiation effects on domain wall mobility and reversibility in lead zirconate titanate thin films

The effects of neutron-induced damage on the ferroelectric properties of thin film lead zirconate titanate (PZT) were investigated. Two sets of PbZr{sub 0.52}Ti{sub 0.48}O{sub 3} films of varying initial quality were irradiated in a research nuclear reactor up to a maximum 1 MeV equivalent neutron fluence of (5.16 {+-} 0.03) Multiplication-Sign 10{sup 15} cm{sup -2}. Changes in domain wall mobility and reversibility were characterized by polarization-electric field measurements, Rayleigh analysis, and analysis of first order reversal curves (FORC). With increasing fluence, extrinsic contributions to the small-signal permittivity diminished. Additionally, redistribution of irreversible hysterons towards higher coercive fields was observed accompanied by the formation of a secondary hysteron peak following exposure to high fluence levels. The changes are attributed to the radiation-induced formation of defect dipoles and other charged defects, which serve as effective domain wall pinning sites. Differences in damage accumulation rates with initial film quality were observed between the film sets suggesting a dominance of pre-irradiation microstructure on changes in macroscopic switching behavior.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Negative terahertz conductivity in disordered graphene bilayers with population inversion

The gapless energy band spectra make the structures based on graphene and graphene bilayer with the population inversion to be promising media for the interband terahertz (THz) lasing. However, a strong intraband absorption at THz frequencies still poses a challenge for efficient THz lasing. In this paper, we show that in the pumped graphene bilayer, the indirect interband radiative transitions accompanied by scattering of carriers by disorder can provide a substantial negative contribution to the THz conductivity (together with the direct interband transitions). In the graphene bilayer on high-κ substrates with point charged defects, these transitions substantially compensate the losses due to the intraband (Drude) absorption. We also demonstrate that the indirect interband contribution to the THz conductivity in a graphene bilayer with the extended defects (such as the charged impurity clusters) can surpass by several times the fundamental limit associated with the direct interband transitions, and the Drude conductivity as well. These predictions can affect the strategy of the graphene-based THz laser implementation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Copper Defects and Charge Collection in Cadmium Telluride Photovoltaic Devices

In CdTe photovoltaic devices, the CdTe layer must be doped with Cu to reduce its resistivity, increase carrier lifetime, and improve hole transport. However, the Cu concentration is typically very low around the interfaces and within the CdTe layer, making it difficult to determine the influence Cu has on charge transport at the nanoscale; Cu concentrations are difficult to detect due to low ionization probability of Cu atoms [1]. Here, we use synchrotron X-ray microscopy to probe the nanoscale distribution of Cu and correlate it to local charge collection in CdTe photovoltaic devices. We demonstrate Cu segregation around grain boundaries, and, using cross-section charge collection measurements and transport modelling, show recombination center concentration in the CdTe layer dictates the interface at which charge collection occurs. The work gives insights on how Cu distributes in CdTe photovoltaic systems, and an understanding of how these distributions affect charge transport.

Walker, Trumann↗
DOE OSTI2015

High pressure study of B{sub 12}As{sub 2}: Electrical transport behavior and the role of grain boundaries

Using a diamond anvil cell, the evolutions of alternate-current impedance spectra and direct- current resistivity in B{sub 12}As{sub 2} have been investigated up to 51.9 GPa. The results provide evidence for the existence of grain and grain boundary effects that are separated in the frequency region. The grain boundary resistance shows a relatively smaller contribution to the total resistance above 16.8 GPa. By using the double-Schottky barrier model, the space charge potential was obtained. A pressure-induced inversion of charge defect concentration in the space charge layer was found at 20.7 GPa. The high-temperature resistivity measurements indicate that the transport activation energy is determined by defect energy levels in the band gap.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗