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At least 73 records · Page 4

Effect of powder layer thickness on the microstructural development of additively manufactured SS316

By Increasing the powder layer thickness we could increase material deposition rates and reduce build times during laser powder bed fusion (LPBF). However, increasing the powder layer thickness could also negatively affect the local melting and subsequent microstructure of the printed material. This study systematically investigated, for the first time, the defect evolution and microstructural changes of LPBF stainless steel 316 (SS316) processed by using various powder layer thicknesses of 40, 80, and 120 μm while also varying the laser dwell time for the pulsed laser. Through image analysis, the pore density was found to increase with increasing powder layer thickness, particularly when the dwell time was too high or too low. The maximum achievable density (>99%) was found over a wide processing window when using the smallest powder layer thickness of 40 μm between dwell times of 60 and 100 μs. Increasing the powder layer thicknesses to 80 and 120 μm resulted in maximum densities of 98.7 and 96.8%, respectively, but the window for acceptable laser dwell times that could achieve these densities narrowed considerably. A microstructural analysis of the melt pools was performed to measure the melt pool depths and widths, both of which increased with increasing dwell time. However, increasing the powder layer thickness did not affect the melt pool depth and only minorly affected the width. A sub-grain cellular structure distinguished the melt pool boundaries. The cell size increased with increasing dwell time and decreasing powder layer thickness. Moreover, the cell size was used to calculate a cooling rate that had a magnitude of 10 7 K/s and increased with increasing powder layer thickness.

36 MATERIALS SCIENCE↗

Microstructural features and deuterium diffusion in lithium penta-aluminate pellets under He + and D + ion irradiation

Lithium (Li) penta-aluminate (LiAl 5 O 8 ) is investigated as a potential tritium (T) breeding material, with a focus on microstructural response to ion irradiation and deuterium (D) diffusion behavior. Under high-fluence ion irradiation (2 x 10 17 (He + +D + )/cm 2 ) at 773 K, LiAl 5 O 8 exhibits significant disorder on the Li sublattice, as revealed by atomic-resolution scanning transmission electron microscopy, while the Al and O sublattices remain stable, demonstrating strong resistance to structural amorphization. Irradiation induces the formation of platelet-shaped antiphase boundaries (APBs), which may serve as effective D trapping sites. Atom probe tomography suggests the presence of 6 LiD clusters in the mass spectra, though definite conclusions regarding APB composition are hindered by signal overlap and limited data statistics. Time-of-flight secondary ion mass spectrometry reveals that D retention approaches to saturation at 3 x 10 17 (He + +D + )/cm 2 . Isothermal and isochronal annealing studies determine an average diffusivity of 1.6 x 10 -13 at 773 K and an effective activation energy of 0.8 ± 0.1 eV for D migration. Compared to γ-LiAlO 2 , LiAl 5 O 8 demonstrates superior irradiation resistance, minimal Li loss, and enhanced D retention, underscoring its potential as a durable breeder material for T production. In conclusion, these findings provide key insights into the microstructural evolution, defect dynamics, and D retention mechanisms in LiAl 5 O 8 under reactor-relevant conditions.

42 ENGINEERING↗

Radiation damage in tungsten under high-energy He-ion irradiation

Tungsten (W) is a primary candidate for plasma-facing components (PFCs) in fusion reactors and hybrid fission-fusion reactors. However, W suffers from severe microstructural damage under Helium (He) ion irradiation in operation conditions. Key irradiation parameters, including incident ion energy, fluence, and irradiation temperature, are known to determine the formation of He bubbles and dislocation loops, which ultimately lead to the degradation of mechanical properties, such as radiation hardening and ductile-to-brittle transition temperature (DBTT) shifts. Various strategies, for instance, interface engineering and alloying, have been developed to enhance He irradiation tolerance in W to address these challenges. Studies in the recent two decades have enhanced the understanding of the underlying mechanisms that drive defect evolution and mechanical performance degradation, thereby offering more insights into the design of more resilient W-based materials for extreme environments.

Liu, Yinghang [Purdue University]↗

Carrier recombination and diffusion in high-purity diamond after electron irradiation and annealing

Carrier-transport mechanisms are studied in high-purity diamond irradiated with 6 MeV electrons in the dose range of 10 12 –10 16 cm -2 and annealed at different temperatures up to 1450°C. Lifetimes and diffusion coefficients are extracted using two pump–probe techniques based on free-carrier absorption and transient-grating principles and then correlated with the corresponding defect evolution from spectroscopic measurements. Furthermore, the neutral monovacancy is revealed as the main carrier recombination center in the as-irradiated diamond, providing bipolar carrier lifetimes of a few nanoseconds at the highest irradiation dose. Carrier-capture cross sections are reduced during annealing as vacancies aggregate into divacancies at ≤1000°C and extended vacancy clusters at 1450°C.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Facet effects on generation-recombination currents in semiconductor laser diodes

The contribution of facet defect currents to the overall generation-recombination current of laser diodes operating near 800 nm is quantified experimentally, using the dependence of current on cavity length to isolate facet effects. Here the results show that facet currents exhibit an ideality factor much greater than 2, while currents associated with the interior of the laser diode stripes exhibit an ideality factor of 2. These differences in behavior provide an approach to infer additional details of defect evolution in aging studies of semiconductor laser diodes.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Microstructural Characterization of Ion Irradiated ODS MA956 Alloy

Oxide Dispersion Strengthened (ODS) alloys are considered as promising nuclear materials for the next generation advanced nuclear reactors due to their improved elevated temperature mechanical properties and radiation damage resistance. MA956 is a commercial ODS alloy with superior oxidation resistance and creep strength at elevated temperatures. The improved properties for ODS alloys can be attributed to the presence of dispersed nanosized oxide particles. These oxide particles can act as barriers to dislocation motion and provide additional sinks and sites for point defect recombination. Hence, their stability can greatly affect the properties of the irradiated ODS alloys. Besides, irradiation will induce defects into the ODS alloys, and these defects can develop further as irradiation dose increases. Furthermore, the defects propagation can significantly undermine the mechanical properties of the bulk materials, resulting in irradiation hardening and lower ductility. Therefore, it is necessary to have a good understanding of the defect’s evolution with irradiation. Hence, efforts are ongoing to understand the effect of ion irradiation on ODS MA956 with emphasis on oxide particles and evolution of defects as a function of dose (2.5, 50 and 100 dpa).

07 ISOTOPE AND RADIATION SOURCES↗

Investigating the Effects of Individual Neutron-Induced Defects in Bipolar Junction Transistors

Here, this study investigates neutron-induced displacement damage in Bipolar Junction Transistors (BJTs) using TCAD models informed by Deep-Level-Transient-Spectroscopy (DLTS) data. These models are calibrated and validated against experimental measurements performed at various neutron fluences. Both npn and pnp transistor configurations are studied to analyze the effects of individual traps on carrier recombination and base leakage currents. In npn transistors, deep traps (0.42 eV from the conduction band) dominate at low voltages, while shallow traps (0.17 eV from the conduction band) become prominent at higher voltages. Conversely, pnp transistors have base leakage current predominantly due to deep-level traps. The study observes a notable trend in trap density versus fluence, characterized by a linear relationship on a log-log scale. These insights into defect evolution under radiation conditions are crucial for optimizing semiconductor device reliability and performance in radiation-prone environments.

42 ENGINEERING↗

Many routes to ferroelectric HfO 2 : A review of current deposition methods

Although 10 years have passed since the initial report of ferroelectricity in hafnia (HfO 2 ), researchers are still intensely fascinated by this material system and the promise it holds for future applications. A wide variety of deposition methods have been deployed to create ferroelectric HfO 2 thin films such as atomic layer deposition, chemical solution deposition, and physical vapor deposition methods such as sputtering and pulsed laser deposition. Process and design parameters such as deposition temperature, precursor choice, target source, vacuum level, reactive gases, substrate strain, and many others are often integral in stabilizing the polar orthorhombic phase and ferroelectricity. We examine processing parameters across four main different deposition methods and their effect on film microstructure, phase evolution, defect concentration, and resultant electrical properties. The goal of this review is to integrate the process knowledge collected over the past 10 years in the field of ferroelectric HfO 2 into a single comprehensive guide for the design of future HfO 2 -based ferroelectric materials and devices.

36 MATERIALS SCIENCE↗

Disassembly of Capsules after Irradiation of Prototype Metal and Nanocomposite Specimens in the High Flux Isotope Reactor

This report summarizes the disassembly, thermometry (TM) analysis, and future post-irradiation examination of irradiation capsules that contain nanodispersion-strengthened materials for the improved neutron irradiation resistance of fuel cladding and reactor core materials. All six capsules were successfully disassembled, and all TM was shipped to the Low Activation Materials Development and Analysis Laboratory for further analysis. The results of this project will support the development of new radiation-resistant materials by helping researchers understand the mechanism of defect evolution at interfaces in nanodispersion-strengthened materials.

36 MATERIALS SCIENCE↗

Implications of Microstructure in Helium-Implanted Nanocrystalline Metals

Helium bubbles are known to form in nuclear reactor structural components when displacement damage occurs in conjunction with helium exposure and/or transmutation. If left unchecked, bubble production can cause swelling, blistering, and embrittlement, all of which substantially degrade materials and—moreover—diminish mechanical properties. On the mission to produce more robust materials, nanocrystalline (NC) metals show great potential and are postulated to exhibit superior radiation resistance due to their high defect and particle sink densities; however, much is still unknown about the mechanisms of defect evolution in these systems under extreme conditions. Here, the performances of NC nickel (Ni) and iron (Fe) are investigated under helium bombardment via transmission electron microscopy (TEM). Bubble density statistics are measured as a function of grain size in specimens implanted under similar conditions. While the overall trends revealed an increase in bubble density up to saturation in both samples, bubble density in Fe was over 300% greater than in Ni. To interrogate the kinetics of helium diffusion and trapping, a rate theory model is developed that substantiates that helium is more readily captured within grains in helium-vacancy complexes in NC Fe, whereas helium is more prone to traversing the grain matrices and migrating to GBs in NC Ni. Our results suggest that (1) grain boundaries can affect bubble swelling in grain matrices significantly and can have a dominant effect over crystal structure, and (2) an NC-Ni-based material can yield superior resistance to irradiation-induced bubble growth compared to an NC-Fe-based material and exhibits high potential for use in extreme environments where swelling due to He bubble formation is of significant concern.

36 MATERIALS SCIENCE↗

In Situ High-Temperature Ultrafast Electron Diffraction through Integrated Furnace and MEMS Platforms

Temperature fundamentally governs phase stability, defect evolution, and transport behavior in materials. Despite its central role, direct measurements of structural evolution at elevated temperatures on ultrafast timescales have remained limited. Here, we report the design, integration, and validation of 2 complementary in situ heating platforms that substantially extend the thermal operating range of ultrafast electron diffraction (UED). A compact furnace-type heating stage enables stable diffraction measurements from room temperature to 800 K with ±0.1 K stability under ultrahigh vacuum, achieved through multi-sensor feedback control, dual air-cooling channels, and a thermally isolated motion stage. In parallel, a microelectromechanical system (MEMS)-based heating platform provides rapid thermal response and access to extreme temperatures ≥1,373 K with ±0.1 K stability over hundreds-micrometer regions while supporting simultaneous electrical biasing for electrothermal coupling studies. Absolute temperature calibration is established using diffraction-based thermometry via aluminum lattice expansion and independently validated through in situ melting of bismuth thin films. UED measurements further reveal pronounced temperature-dependent nonequilibrium lattice dynamics in bismuth, including modifications to electron–phonon coupling and Debye–Waller behavior, as well as enhanced ultrafast diffuse scattering in aluminum at elevated temperatures. Together, these developments establish a practical framework for quantitative, time-resolved studies of temperature-driven kinetics and nonequilibrium structural dynamics under extreme thermal environments.

Bai, Qianqian [Chinese Academy of Sciences (CAS), ↗

Direct Observation of Defect‐Aided Structural Evolution in a Nickel‐Rich Layered Cathode

Abstract Ni‐rich LiNi 1− x − y Mn x Co y O 2 (NMC) layered compounds are the dominant cathode for lithium ion batteries. The role of crystallographic defects on structure evolution and performance degradation during electrochemical cycling is not yet fully understood. Here, we investigated the structural evolution of a Ni‐rich NMC cathode in a solid‐state cell by in situ transmission electron microscopy. Antiphase boundary (APB) and twin boundary (TB) separating layered phases played an important role on phase change. Upon Li depletion, the APB extended across the layered structure, while Li/transition metal (TM) ion mixing in the layered phases was detected to induce the rock‐salt phase formation along the coherent TB. According to DFT calculations, Li/TM mixing and phase transition were aided by the low diffusion barriers of TM ions at planar defects. This work reveals the dynamical scenario of secondary phase evolution, helping unveil the origin of performance fading in Ni‐rich NMC.

Li, Shuang↗

Direct observation of defect-aided structural evolution in Ni-rich layered cathode

Ni-rich LiNi 1-x-y Mn x Co y O 2 (NMC) layered compounds have become the dominated cathode for lithium ion batteries. The role of crystallographic defects on their structure evolution and consequent performance degradation during electrochemical cycling is not yet fully understood. In this work, we investigated the structural evolution of Ni-rich NMC cathode in a solid-state cell via in-situ transmission electron microscopy. We identified antiphase boundary (APB) and twin boundary (TB) separating layered phases played an important role on phase change. Upon the lithium depletion, the APB extends across the layered structure, while Li/transition metal (TM) ion mixing in the layered phases is detected to induce the rock-salt phase formation along the coherent TB. According to DFT calculations, Li/TM mixing and phase transition are aided by the low diffusion barriers of TM ions at planar defects. Finally, this work reveals the dynamical scenario of secondary phase evolution, which helps to unveil the origin of performance fading in Ni-rich NMC.

25 ENERGY STORAGE↗

In-Situ Transmission Electron Microscopy Study of the Evolution of Extended Defects in Oxide Nuclear Fuels

In-situ transmission electron microscopy (TEM) with simulated extreme environments is an effective tool for understanding and tracking microstructural changes down to the atomic scale. The objective of this research is to study the effect of temperature on the evolution of extended defects in ThO2 and UO2. Here, we present in-situ TEM isochronal thermal annealing experiments using a micro-electro-mechanical-system (MEMS)-based heating holder. ThO2 and UO2 single crystal specimens were grown inside an inert silver ampoule using hydrothermal synthesis. Both samples were irradiated using 2 MeV protons at 600oC up to 0.1 dpa at Texas A&M University’s Accelerator Laboratory. Fig. 1a shows a weak-beam dark field TEM image of ThO2 after irradiation, indicating the presence of faulted 1/3 <111> type dislocation loops. This presentation will discuss the effect of annealing temperature (600oC, 800oC, 1000oC, 1100oC, etc.) on dislocation loop density, size and distribution, loop nature (interstitial/vacancies) and Burgers vector, as well as the formation of voids in both ThO2 and UO2. This work will also discuss the interaction between defects during annealing. The in-situ TEM annealing cycle is shown in Fig 1b. This research significantly improves the understanding of defect behavior in oxide nuclear fuels with temperature and will aid computational modeling efforts. This work was supported as part of the Center for Thermal Energy Transport under Irradiation (TETI) Energy Frontier Research Center, funded by the U.S. Department of Energy Office of Science.

36 MATERIALS SCIENCE↗

Atomistically-informed modeling of point defect clustering and evolution in irradiated ThO 2

A cluster dynamics (CD) model has been developed to investigate the nucleation and growth of point defect clusters, i.e., interstitial prismatic loops and nanoscale and sub-nanoscale voids, in ThO 2 during irradiation by energetic particles. The model considers cluster off-stoichiometry due to the asymmetry of point defect generation on the O and Th sublattices under irradiation, as well as the point defect diffusivities and the defect binding energies to clusters. The energies were established using detailed molecular dynamics simulations considering the statistical variability of cluster configuration. A high-order adaptive time-integration has been used to solve the model. The predicted loop density and their average size is in good agreement with reported experimental observations for proton irradiated ThO 2 at 600°C. In conclusion, the model did not predict void evolution due to the sluggish kinetics of cation vacancies, explaining the absence of voids in proton irradiated ThO 2 (and other oxides) at relatively low temperatures.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Kinetic control of phase evolution and defect-mediated recombination in AACVD-grown copper antimony sulphide thin films

Copper antimony sulphide (CAS) is a multinary chalcogenide semiconductor in which small deviations from stoichiometry can drive phase competition and strong defect-mediated modulation of optoelectronic properties. However, the systematic roles of copper precursor fraction and deposition time in governing phase evolution, off-stoichiometry, and recombination dynamics in aerosol-assisted chemical vapour deposition (AACVD)-grown undoped CAS thin films remain insufficiently understood. In this work, undoped CAS thin films were deposited by AACVD using Cu(dedtc)2 and Sb(dedtc)3 single-source precursors at 550 °C and a carrier gas flow rate of 150 sccm, while the Cu(dedtc)2 mole fraction (x = 0.15 – 0.55) and deposition time (1 – 2 hours) were systematically varied to probe how growth kinetics influence phase composition, microstructure, and defect-mediated optical properties without post-deposition annealing or extrinsic doping. Increasing copper precursor content drives phase evolution toward tetrahedrite-dominant CAS films at intermediate Cu(dedtc)2 mole fractions, with the film deposited at x = 0.35 exhibiting the strongest tetrahedrite character within the parameter space examined. The films are also copper-rich, antimony-poor, and sulphur-deficient, consistent with off-stoichiometric growth and intrinsic defect formation, plausibly including copper interstitials, Cu-on-Sb antisites, and sulphur vacancies. These growth-dependent compositional deviations are accompanied by tunable indirect optical bandgaps of approximately 1.60 – 2.18 eV and weak visible photoluminescence governed by defect-mediated recombination. Time-resolved photoluminescence reveals bi-exponential decay behaviour with lifetimes of approximately 0.1 – 3.6 ns, with emission dominated by slower donor–acceptor pair recombination and a smaller contribution from faster trap-assisted pathways. Collectively, these results establish an explicit kinetic process–structure–defect–property relationship for AACVD-grown CAS thin films and provide a growth–structure–property framework relevant to future optimization of CAS-based optoelectronic and energy materials.

36 MATERIALS SCIENCE↗

Influence of implantation temperature and He implantation-induced defects on morphological evolution of co-deposited Cu-Mo nanocomposites

Here, we investigate the effect of high-temperature helium (He) implantation on microstructural evolution in physical-vapor-co-deposited nanocomposite thin films of copper (Cu) and molybdenum (Mo). The microstructure morphologies of He-implanted and He-free domains are characterized using transmission electron microscopy and statistical analysis. High implantation temperatures (500°C and 750°C) lead to coarsening of Cu and Mo domains and their eventual reorientation. The microstructure evolution in He-implanted and He-free domains is comparable, indicating that implantation-induced defects do not accelerate the coarsening of the nanocomposite as compared to annealing alone. This observation contrasts with previously reported effects of implantation-induced defects on single-phase nanocrystalline metals, which include enhancement of grain growth by increasing self-diffusivity or its inhibition by pinning of grain boundaries.

36 MATERIALS SCIENCE↗