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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4

Improved Method For Making Infrared Imagers

Properties of thin dielectric layer adjusted precisely. Deposition technique found to improve fabrication of infrared imaging devices. Applied to dielectric layer of SiO and SiO2, critical to operation of device. For imager to work properly, thickness of dielectric layer adjusted precisely in coordination with absorption coefficient and wavelength of light imaged. New deposition process enables adjustment of thickness and index of refraction of critical dielectric layer to within plus or minus 1 percent.

Kaganowicz, G.↗

Purification process for vertically aligned carbon nanofibers

Individual, free-standing, vertically aligned multiwall carbon nanotubes or nanofibers are ideal for sensor and electrode applications. Our plasma-enhanced chemical vapor deposition techniques for producing free-standing and vertically aligned carbon nanofibers use catalyst particles at the tip of the fiber. Here we present a simple purification process for the removal of iron catalyst particles at the tip of vertically aligned carbon nanofibers derived by plasma-enhanced chemical vapor deposition. The first step involves thermal oxidation in air, at temperatures of 200-400 degrees C, resulting in the physical swelling of the iron particles from the formation of iron oxide. Subsequently, the complete removal of the iron oxide particles is achieved with diluted acid (12% HCl). The purification process appears to be very efficient at removing all of the iron catalyst particles. Electron microscopy images and Raman spectroscopy data indicate that the purification process does not damage the graphitic structure of the nanotubes.

Nanotechnology/methods↗

Catalytic-Metal/PdO(sub x)/SiC Schottky-Diode Gas Sensors

Miniaturized hydrogen- and hydrocarbon-gas sensors, heretofore often consisting of Schottky diodes based on catalytic metal in contact with SiC, can be improved by incorporating palladium oxide (PdOx, where 0 less than or equal to x less than or equal to 1) between the catalytic metal and the SiC. In prior such sensors in which the catalytic metal was the alloy PdCr, diffusion and the consequent formation of oxides and silicides of Pd and Cr during operation at high temperature were observed to cause loss of sensitivity. However, it was also observed that any PdOx layers that formed and remained at PdCr/SiC interfaces acted as barriers to diffusion, preventing further deterioration by preventing the subsequent formation of metal silicides. In the present improvement, the lesson learned from these observations is applied by placing PdOx at the catalytic metal/SiC interfaces in a controlled and uniform manner to form stable diffusion barriers that prevent formation of metal silicides. A major advantage of PdOx over other candidate diffusion-barrier materials is that PdOx is a highly stable oxide that can be incorporated into gas sensor structures by use of deposition techniques that are standard in the semiconductor industry. The PdOx layer can be used in a gas sensor structure for improved sensor stability, while maintaining sensitivity. For example, in proof-of-concept experiments, Pt/PdOx/SiC Schottky-diode gas sensors were fabricated and tested. The fabrication process included controlled sputter deposition of PdOx to a thickness of 50 Angstroms on a 400-m-thick SiC substrate, followed by deposition of Pt to a thickness of 450 Angstroms on the PdOx. The SiC substrate (400 microns in thickness) was patterned with photoresist and a Schottky-diode photomask. A lift-off process completed the definition of the Schottky-diode pattern. The sensors were tested by measuring changes in forward currents at a bias potential of 1 V during exposure to H2 in N2 at temperatures ranging from 450 to 600 C for more than 750 hours. The sensors were found to be stable after a break-in time of nearly 200 hours. The sensors exhibited high sensitivity: sensor currents changed by factors ranging from 300 to 800 when the gas was changed from pure N2 to 0.5 percent H2 in N2.

Hunter, Gary W.↗

Evaluation of glass resin coatings for solar cell applications

Using a variety of non-vacuum deposition techniques coatings were implemented on silicon solar cells and arrays of cells interconnected on Kapton substrates. The coatings provide both antireflection optical matching and environmental protection. Reflectance minima near 2% was achieved at a single wavelength in the visible. Reflectance averaging below 5% across the useful collection range was demonstrated. The coatings and methods of deposition were: (1) Ta2O5 spun, dipped or sprayed; (2) Ta2O5.SiO2 spun, dipped or sprayed; (3) GR908 (SiO2) spun, dipped, or sprayed. Total coating thickness were in the range of 18 microns to 25 microns. The coatings and processes are compatible with single cells or cells mounted on Kapton substrates.

Field, M. B.↗

Advanced Strain-Isolation-Pad Material with Bonded Fibrous Construction

The feasibility of utilizing air lay and liquid lay felt deposition techniques to fabricate strain isolation pad (SIP) materials for the Space Shuttle Orbiter was demonstrated. These materials were developed as candidate replacements for the present needled felt SIP used between the ceramic tiles and the aluminum skin on the undersurface of the Orbiter. The SIP materials that were developed consisted of high temperature aramid fibers deposited by controlled fluid (air or liquid) carriers to form low density unbonded felts. The deposited felts were then bonded at the fiber intersections with a small amount of high temperature polyimide resin. This type of bonded felt construction can potentially eliminate two of the problems associated with the present SIP, viz., transmittal of localized stresses into the tiles and load history dependent mechanical response. However, further work is needed to achieve adequate through thickness tensile strength in the bonded felts.

Seibold, R. W.↗

Boron nitride: Composition, optical properties and mechanical behavior

A low energy ion beam deposition technique was used to grow boron nitride films on quartz, germanium, silicon, gallium arsenide, and indium phosphate. The film structure was amorphous with evidence of a hexagonal phase. The peak boron concentration was 82 at %. The carbon and oxygen impurities were in the 5 to 8 at % range. Boron-nitrogen and boron-boron bonds were revealed by X-ray photoelectron spectroscopy. The index of refraction varied from 1.65 to 1.67 for films deposited on III-V compound semiconductors. The coefficient of friction for boron nitride in sliding contact with diamond was less than 0.1. The substrate was silicon.

Pouch, John J.↗

Boron nitride - Composition, optical properties, and mechanical behavior

A low energy ion beam deposition technique was used to grow boron nitride films on quartz, germanium, silicon, gallium arsenide, and indium phosphate. The film structure was amorphous with evidence of a hexagonal phase. The peak boron concentration was 82 at. percent. The carbon and oxygen impurities were in the 5 to 8 at. percent range. Boron-nitrogen and boron-boron bonds were revealed by X-ray photoelectron spectroscopy. The index of refraction varied from 1.65 to 1.67 for films deposited on III-V compound semiconductors. The coefficient of friction for boron nitride in sliding contact with diamond was less than 0.1. The substrate was silicon.

Pouch, John J.↗

The Effects of Experimental Conditions on the Refractive Index and Density of Low-Temperature Ices: Solid Carbon Dioxide

We present the first study on the effects of the deposition technique on the measurements of the visible refractive index and the density of a low-temperature ice using solid carbon dioxide (CO2) at 14-70 K as an example. While our measurements generally agree with previous studies that show a dependence of index and density on temperature below 50 K, we also find that the measured values depend on the method used to create each sample. Below 50 K, we find that the refractive index varied by as much as 4% and the density by as much as 16% at a single temperature depending on the deposition method. We also show that the Lorentz-Lorenz approximation is valid for solid CO2 across the full 14-70 K temperature range, regardless of the deposition method used. Since the refractive index and density are important in calculations of optical constants and infrared (IR) band strengths of materials, our results suggest that the deposition method must be considered in cases where nvis and ρ are not measured in the same experimental setup where the IR spectral measurements are made.

planetary nebulae↗

Investigation of failure mechanisms in integrated vacuum circuits

The fabrication techniques of integrated vacuum circuits are described in detail. Data obtained from a specially designed test circuit are presented. The data show that the emission observed in reverse biased devices is due to cross-talk between the devices and can be eliminated by electrostatic shielding. The lifetime of the cathodes has been improved by proper activation techniques. None of the cathodes on life test has shown any sign of failure after more than 3500 hours. Life tests of triodes show a decline of anode current by a factor of two to three after a few days. The current recovers when the large positive anode voltage (100 V) has been removed for a few hours. It is suggested that this is due to trapped charges in the sapphire substrate. Evidence of the presence of such charges is given, and a model of the charge distribution is presented consistent with the measurements. Solution of the problem associated with the decay of triode current may require proper treatment of the sapphire surface and/or changes in the deposition technique of the thin metal films.

Rosengreen, A.↗

Bump Bonding Using Metal-Coated Carbon Nanotubes

Bump bonding hybridization techniques use arrays of indium bumps to electrically and mechanically join two chips together. Surface-tension issues limit bump sizes to roughly as wide as they are high. Pitches are limited to 50 microns with bumps only 8-14 microns high on each wafer. A new process uses oriented carbon nanotubes (CNTs) with a metal (indium) in a wicking process using capillary actions to increase the aspect ratio and pitch density of the connections for bump bonding hybridizations. It merges the properties of the CNTs and the metal bumps, providing enhanced material performance parameters. By merging the bumps with narrow and long CNTs oriented in the vertical direction, higher aspect ratios can be obtained if the metal can be made to wick. Possible aspect ratios increase from 1:1 to 20:1 for most applications, and to 100:1 for some applications. Possible pitch density increases of a factor of 10 are possible. Standard capillary theory would not normally allow indium or most other metals to be drawn into the oriented CNTs, because they are non-wetting. However, capillary action can be induced through the ability to fabricate oriented CNT bundles to desired spacings, and the use of deposition techniques and temperature to control the size and mobility of the liquid metal streams and associated reservoirs. This hybridization of two technologies (indium bumps and CNTs) may also provide for some additional benefits such as improved thermal management and possible current density increases.

Lamb, James L.↗

Calorimetric detection of neutral-atom content of ion beam

Energy deposition technique deduces neutral-beam flux or dose from measured values of incremental resistance increases in platinum wire passed through beam. Steady-state heat balance analysis led to equivalent neutral-beam current. Method was used to detect neutral-atom content of 60-keV argon ion beam.

Roberts, A. S., Jr.↗

Ovonic switching in tin selenide thin films

Amorphous tin selenide thin films which possess Ovonic switching properties were fabricated using vacuum deposition techniques. Results obtained indicate that memory type Ovonic switching does occur in these films the energy density required for switching from a high impedance to a low impedance state is dependent on the spacing between the electrodes of the device. The switching is also function of the magnitude of the applied voltage pulse. A completely automated computer controlled testing procedure was developed which allows precise control over the shape of the applied voltage switching pulse. A survey of previous experimental and theoretical work in the area of Ovonic switching is also presented.

Baxter, C. R.↗

Ternary compound thin film solar cells

A group of ternary compound semiconductor (I-III-VI2) thin films for future applications in photovoltaic devices is proposed. The consideration of these materials (CuInSe2, CuInTe2 and especially CuInS2) for long range device development is emphasized. Much of the activity to date has been concerned with the growth and properties of CuInX2 films. X-ray and electron diffraction analyses, Hall mobility and coefficient, resistivity and carrier concentration variations with substrate and film temperature as well as grain size data have been determined. Both p- and n-type films of CuInS2 and CuInSe2 have been produced. Single and double source deposition techniques have been utilized. Some data have been recorded for annealed films.

Kazmerski, L. L.↗

Large diameter carbon-boron fiber

Investigations concerned with a development of large-diameter carbon fibers are considered, taking into account the employment of vapor deposition techniques. In the experiments a carbon monofilament substrate is used together with reacting gases which consist of combinations of hydrogen, methane, and boron trichloride. It is found that the described approach can be used to obtain a large-diameter carbon filament containing boron. The filament has reasonable strength and modulus properties.

Veltri, R. D.↗

Mechanical and physical properties of modern boron fibers

Measurements of the Young's modulus, flexural modulus, shear modulus and Poisson's ratio for boron fibers prepared by modern deposition techniques are reported. Physical properties of the boron fibers, including density, thermal expansion and resistance, are also surveyed. In addition, prediction of the total deformation strain in an anelastic boron fiber subjected to tensile or flexural stress is discussed.

Dicarlo, J. A.↗