Search NASA⌕ Search

SEARCH · Search NASA

Results for “growth temperature”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1988

Temperature Fluctuations During Crystal Growth

Technique developed to deconvolve period and relative amplitude of fluctuations of heat flow inBridgman crystal growth. Temperature-measuring device with enough sensitivity and frequency response to make desired measurements inserted close as possible to substance monitored. Time-dependent temperature response recorded, and time domain response converted to frequency domain for further analysis. Fast fourier transform (FFT) of data on temperature oscillations shows particular behavior at some specific frequencies corresponding with striations, or defects observed on crystal. Useful procedure to help determine sources of some growth-induced crystalline defects. Other processes sensitive to small temperature fluctuations, such as diffusion, precipitation, and corrsion, benefit from technique.

Fripp, Archibald L., Jr.↗
NASA NTRS2003

Temperature modulates the cell wall mechanical properties of rice coleoptiles by altering the molecular mass of hemicellulosic polysaccharides

The present study was conducted to investigate the mechanism inducing the difference in the cell wall extensibility of rice (Oryza sativa L. cv. Koshihikari) coleoptiles grown under various temperature (10-50 degrees C) conditions. The growth rate and the cell wall extensibility of rice coleoptiles exhibited the maximum value at 30-40 degrees C, and became smaller as the growth temperature rose or dropped from this temperature range. The amounts of cell wall polysaccharides per unit length of coleoptile increased in coleoptiles grown at 40 degrees C, but not at other temperature conditions. On the other hand, the molecular size of hemicellulosic polysaccharides was small at temperatures where the cell wall extensibility was high (30-40 degrees C). The autolytic activities of cell walls obtained from coleoptiles grown at 30 and 40 degrees C were substantially higher than those grown at 10, 20 and 50 degrees C. Furthermore, the activities of (1-->3),(1-->4)-beta-glucanases extracted from coleoptile cell walls showed a similar tendency. When oat (1-->3),(1-->4)-beta-glucans with high molecular mass were incubated with the cell wall enzyme preparations from coleoptiles grown at various temperature conditions, the extensive molecular mass downshifts were brought about only by the cell wall enzymes obtained from coleoptiles grown at 30-40 degrees C. There were close correlations between the cell wall extensibility and the molecular mass of hemicellulosic polysaccharides or the activity of beta -glucanases. These results suggest that the environmental temperature regulates the cell wall extensibility of rice coleoptiles by modifying mainly the molecular mass of hemicellulosic polysaccharides. Modulation of the activity of beta-glucanases under various temperature conditions may be involved in the alteration of the molecular size of hemicellulosic polysaccharides.

Cellulose/chemistry/metabolism↗
NASA NTRS2005

High Growth Rate Metal-Organic Molecular Beam Epitaxy for the Fabrication of GaAs Space Solar Cells

In this work it is shown that high quality GaAs photovoltaic devices can be produced by Molecular Beam Epitaxy (MBE) with growth rates comparable to metal-organic chemical vapor deposition (MOCVD) through the subsitution of group III solid sources by metal-organic compounds. The influence the III/V flux-ratio and growth temperatures in maintaining a two dimensional layer by layer growth mode and achieving high growth rates with low residual background impurities is investigated. Finally subsequent to the study of the optimization of n- and p doping of such high growth rate epilayers, results from a preliminary attempt in the fabrication of GaAs photovoltaic devices such as tunnel diodes and solar cells using the proposed high growth rate approach are reported.

Freundlich, A.↗
NASA NTRS1974

Effects of mutation and some environmental factors on the physiology and pathogenicity of selected bacteria

Studies with mutants of Staphylococcus aureus lacking some virulence factors suggest that the presence of deoxyribonuclease correlates with mouse pathogenicity of S. aureus, while the ability to ferment mannitol or the possession of coagulases are not required for virulence. Autotrophy investigations on mycobacteria demonstrate a complete correlation between the ability to grow with hydrogen and the species of scotochromogenic mycobacterium tested. All tested strains of M. gordonae, a saprophyte, could grow autotrophically while none of the tested strains of M. scrofulaceum, a clinically important species, possessed this ability. A series of heat tolerant mutants of Pseudomonas fluorescences were obtained which can grow at temperatures up to 54 C, in contrast to a maximum growth temperature of 37 C for the wild type.

Decicco, B. T.↗
NASA NTRS1985

Hgi2 Sub 2 Crystal Growth for Nuclear Detectors

The objectives of this program are to obtain a benchmark quality sample grown at low-g conditions and to study vapor growth phenomena under space conditions. Ground-based crystals show a defect structure which impairs their performance as nuclear radiation detectors. These defects may be caused by the gravitational force acting on the crystal in its weakended state at the elevated growth temperature and by irregular convection patterns in the vapor during growth. Mechanical strength measurements have been performed (uniaxial compression tests) which show that the crystals exhibit slip parallel to the c-planes at stresses as low as 1/2 psi. Preliminary calculations using a simple linearized model indicate the oscillating instabilities in the convection part of the vapor transport system are unlikely, even at 1-g, provided that the utmost care is taken in the preparation of the crystal growth source material.

Schnepple, W. F.↗
NASA NTRS1992

Elemental boron-doped p(+)-SiGe layers grown by molecular beam epitaxy for infrared detector applications

SiGe/Si heterojunction internal photoemission (HIP) detectors have been fabricated utilizing molecular beam epitaxy of p(+)-SiGe layers on p(-)-Si substrates. Elemental boron from a high-temperature effusion cell was used as the dopant source during MBE growth, and high doping concentrations have been achieved. Strong infrared absorption, mainly by free-carrier absorption, was observed for the degenerately doped SiGe layers. The use of elemental boron as the dopant source allows a low MBE growth temperature, resulting in improved crystalline quality and smooth surface morphology of the Si(0.7)Ge(0.3) layers. Nearly ideal thermionic emission dark current characteristics have been obtained. Photoresponse of the HIP detectors in the long-wavelength infrared regime has been demonstrated.

Lin, T. L.↗
NASA NTRS1976

Fatigue crack growth at elevated temperature 316 stainless steel and H-13 steel

Crack growths were measured at elevated temperatures under four types of loading: pp, pc, cp, and cc. In H-13 steel, all these four types of loading gave nearly the same crack growth rates, and the length of hold time had negligible effects. In AISI 316 stainless steel, the hold time effects on crack growth rate were negligible if the loading was tension-tension type; however, these effects were significant in reversed bending load, and the crack growth rates under these four types of loading varied considerably. Both tensile and compressive hold times caused increased crack growth rate, but the compressive hold period was more deleterious than the tensile one. Metallographic examination showed that all the crack paths under different types of loading were largely transgranular for both CTS tension-tension specimens and SEN reversed cantilever bending specimens. In addition, an electric potential technique was used to monitor crack growth at elevated temperature.

Chen, W. C.↗
NASA NTRS2001

High Temperature Fatigue Crack Growth Behavior of Alloy 10

Methods to improve the high temperature, dwell crack growth resistance of Alloy 10, a high strength, nickel-base disk alloy, were studied. Two approaches, heat treat variations and composition modifications, were investigated. Under the heat treat approach, solution temperature, cooling rates, and stabilization, were studied. It was found that higher solution temperatures, which promote coarser grain sizes, coupled with a 1550 F stabilization treatment were found to significantly reduce dwell crack growth rates at 1300 F Changes in the niobium and tantalum content were found to have a much smaller impact on crack growth behavior. Lowering the niobium:tantalum ratio did improve crack growth resistance and this effect was most pronounced for coarse grain microstructures. Based on these findings, a coarse grain microstructure for Alloy 10 appears to be the best option for improving dwell crack growth resistance, especially in the rim of a disk where temperatures can reach or exceed 1300 T. Further, the use of advanced processing technologies, which can produce a coarse grain rim and fine grain bore, would be the preferred option for Alloy 10 to obtain the optimal balance between tensile, creep, and crack growth requirements for small gas turbine engines.

Gayda, John↗
NASA NTRS1996

Convection during Thermally Unstable Solidification of Pb-Sn in a Magnetic Field

Convection and macrosegregation in directionally solidified hypoeutectic Pb-38 wt pct Sn and hypereutectic Pb-64.5 wt pct Sn have been examined during upward and downward growth. Temperature fluctuations are observed along the length of the melt column during downward growth. With increasing Rayleigh number, these fluctuations change from none, to cyclic, to time periodic having multiple harmonics, and finally to random. At the higher convective driving force of 350 K temperature inversion, the transverse magnetic field decreased convective levels, strong random temperature fluctuations (flows) becoming smaller and periodic. The maximum field of 0.45 T was unable to completely eliminate convection. For the lower convective driving force of 150 K temperature inversion, the 0.05 T magnetic field decreased flows, and at 0.15 T, the field caused a dramatic decrease in the characteristic frequency of the temperature fluctuations, indicating a change in the nature of the flow, the waveform of the temperature fluctuations changing from sinusoidal to a pulsed wave. Temperature fluctuations and time delays between thermocouples were used to estimate flow velocities. Irrespective of the convection in the bulk melt (ahead of the mushy zone), longitudinal macrosegregation occurs only if the interdendritic melt mixes with the bulk melt.

Song, H.↗
NASA NTRS1986

Structural properties of bismuth-bearing semiconductor alloys

The structural properties of bismuth-bearing III-V semiconductor alloys are addressed. Because the Bi compounds are not known to form zincblende structures, only the anion-substituted alloys InPBi, InAsBi, and InSbBi are considered candidates as narrow-gap semiconductors. Miscibility calculations indicate that InSbBi will be the most miscible, and InPBi, with the large lattice mismatch of the constituents, will be the most difficult to mix. Calculations of the hardness of the Bi compounds indicate that, once formed, the InPBi alloy will be harder than the other Bi alloys, and substantially harder than the currently favored narrow-gap semiconductor HgCdTe. Thus, although InSbBi may be an easier material to prepare, InPBi promises to be a harder material. Growth of the Bi compounds will require high effective growth temperatures, probably attainable only through the use of nonequilibrium energy-assisted epitaxial growth techniques.

Berding, M. A.↗
NASA NTRS1992

Co diffusion and growth of buried single-crystal CoSi2 in Si(111) by endotaxy

At a growth temperature of 800 C, Co deposited on a Si capping layer exhibits oriented growth on buried CoSi2 grains on Si(111), a process referred to as endotaxy. This occurs preferentially to surface nucleation of CoSi2, provided the thickness of the Si cap is less than a critical value of about 100 nm for deposition rates of 0.003-0.01 nm/s. The steady-state process is modeled using known values of the Co diffusion coefficient and solid solubility in Si, allowing some conclusions to be drawn regarding parameters relevant to CoSi2 epitaxy. Using this technique, single-crystal continuous layers of CoSi2 can be formed under a high-quality Si capping layer.

Fathauer, R. W.↗
NASA NTRS1972

GaAs vapor-grown bipolar transistors.

Discussion of an approach for the fabrication of high-temperature GaAs transistors which is centered on the preparation of n-p-n three-layered structures entirely by a vapor-phase growth technique, as described by Tietjen and Amick (1966). The low growth temperature of approximately 750 C is thought to reduce contamination during crystal growth and to contribute to the reasonably high minority-carrier lifetimes obtained for the vapor-grown p-n junctions. The fact that impurity concentrations and layer thicknesses can be precisely controlled for epitaxial layers as thin as 1 micrometer is an important feature of this growth technique.

Nuese, C. J.↗
NASA NTRS1976

The influence of growth rate and temperature on high cycle fatigue of Al-Al3Ni

High-cycle fatigue tests have been conducted on specimens of an Al-Al3Ni eutectic alloy, unidirectionally solidified at selected rates from 0.000139 to 0.3 cm/sec. Tests were conducted in air at 298, 458 and 683 K. Room temperature fatigue lives were independent of growth rate at low solidification rates but were markedly improved in samples grown at 0.3 cm/sec. Materials grown at 0.00833 cm/sec exhibited fatigue lives similar to those of the lower growth rates, despite gross misalignment due to cellular growth. The dependence of fatigue life on growth rate at elevated temperatures appears to be due primarily to differences in cyclic creep rates as a result of varying interfiber spacings. Crack initiation and propagation mechanisms were established by metallographic and fractographic examination. Dislocation substructure-fiber interactions were studied by transmission electron microscopy.

Maurer, G. E.↗
NASA NTRS2002

Plasma-enhanced chemical vapor deposition of multiwalled carbon nanofibers

Plasma-enhanced chemical vapor deposition is used to grow vertically aligned multiwalled carbon nanofibers (MWNFs). The graphite basal planes in these nanofibers are not parallel as in nanotubes; instead they exhibit a small angle resembling a stacked cone arrangement. A parametric study with varying process parameters such as growth temperature, feedstock composition, and substrate power has been conducted, and these parameters are found to influence the growth rate, diameter, and morphology. The well-aligned MWNFs are suitable for fabricating electrode systems in sensor and device development.

Nanotechnology/instrumentation/methods↗
NASA NTRS2006

Quantum-Dot Laser for Wavelengths of 1.8 to 2.3 micron

The figure depicts a proposed semiconductor laser, based on In(As)Sb quantum dots on a (001) InP substrate, that would operate in the wavelength range between 1.8 and 2.3 m. InSb and InAsSb are the smallest-bandgap conventional III-V semiconductor materials, and the present proposal is an attempt to exploit the small bandgaps by using InSb and InAsSb nanostructures as midinfrared emitters. The most closely related prior III-V semiconductor lasers are based, variously, on strained InGaAs quantum wells and InAs quantum dots on InP substrates. The emission wavelengths of these prior devices are limited to about 2.1 m because of critical quantum-well thickness limitations for these lattice mismatched material systems. The major obstacle to realizing the proposed laser is the difficulty of fabricating InSb quantum dots in sufficient density on an InP substrate. This difficulty arises partly because of the weakness of the bond between In and Sb and partly because of the high temperature needed to crack metalorganic precursor compounds during the vapor-phase epitaxy used to grow quantum dots: The mobility of the weakly bound In at the high growth temperature is so high that In adatoms migrate easily on the growth surface, resulting in the formation of large InSb islands at a density, usually less than 5 x 10(exp 9) cm(exp -2), that is too low for laser operation. The mobility of the In adatoms could be reduced by introducing As atoms to the growth surface because the In-As bond is about 30 percent stronger than is the In-Sb bond. The fabrication of the proposed laser would include a recently demonstrated process that involves the use of alternative supplies of precursors to separate group-III and group-V species to establish local non-equilibrium process conditions, so that In(As)Sb quantum dots assemble themselves on a (001) InP substrate at a density as high as 4 x 10(exp 10) cm(exp -2). Room-temperature photoluminescence spectra of quantum dots formed by this process indicate that they emit at wavelengths from 1.7 to 2.3 microns.

Qiu, Yueming↗
NASA NTRS1973

GaN for LED applications

In order to improve the synthesis of GaN the effect of various growth and doping parameters has been studied. Although Be, Li, Mg, and Dy can be used to overcompensate native donors, the most interesting acceptor element is Zn. The emission spectrum and the luminescence efficiency depend on the growth temperature (below 800 C), on the partial pressure of the doping impurity, and on the duration of growth. Blue-green electroluminescence with a power efficiency of 0.1 percent and a brightness of 850 fL (at 0.6 mA and 22.5 V) was obtained. Some diodes allow the color of the emitted light to change by reversing the polarity of the bias. Continuous operation of a diode over a period of 5 months showed no evidence of degradation. The luminescence properties of ion-implanted GaN were studied. Delay effects were found in the electroluminescence of diodes, although, with a dc bias, a 70-MHz modulation was possible.

Pankove, J. I.↗
NASA NTRS1991

Subsurface Growth of CoSi2 by Deposition of Co on Si-Capped CoSi2 Seed Regions

At a growth temperature of 800 C, Co deposited on Si(111) diffuses through a Si cap and exhibits oriented growth on buried CoSi2 grains, a process referred to as endotaxy. This occurs preferentially to surface nucleation of CoSi2 provided the thickness of the Si cap is less than a critical value between 100 and 200 nm for a deposition rate of 0.01 nm/s. Steady-state endotaxy is modeled under the assumption that the process is controlled by Co diffusion.

Fathauer, R. W.↗
NASA NTRS1991

The effects of oxygen on the evolution of microbial membranes

One prokaryote, Methylococcus capsulatus, synthesizes both hopanoids and sterols and, thus, provides a unique opportunity to study the evolution of membrane function. When M. capsulatus was grown at different temperatures, lipid analysis of the whole cells showed that both sterol and unsaturated fatty acid levels decreased at higher growth temperatures; sterol concentrations were 0.116 micro mole/micro mole phospholipid at 30 C and 0.025 micro mole/mirco mole phospholipid at 45 C, while the saturated to unsaturated fatty acid ratio increased from 0.397 to 1.475. Hopane polyol levels were constant over this range; however, methylation of the A-ring decreased markedly in cells grown at 30 C. These results imply that sterol and hopane molecules are required for enhancement of some specific membrane function, potentially by modulating membrane fluidity.

Jahnke, L. L.↗