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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4

Oxygen Impurities and Defects in Epitaxial Layer SiC and SiC Wafer Characterized by Room and Low Temperatures FTIR

SiC as a highly promising semiconducting material has received increasing attention in the last decade. The impurities such as oxygen and hydrogen have a great effect in electronic properties of semiconducting materials. In this study, the FTIR spectra were measured at room temperature (25 C) and low temperature (-70 C) for an n-type SiC substrate, a p-type epitaxial layer SiC, and patterned Ta on a p-type epitaxial layer SiC sample. The oxygen related IR peaks were measured for all three samples at room and low temperatures. The peak at 1105 cm(exp -1) is the result of a substitutional carbon and a interstitial oxygen in SiC. The concentration of the impurity oxygen increases in the SiC epitaxial layer during the CVD and electron beam processes. For the n-type SiC substrate, this peak does not appear. The peak at 905 cm(exp -1) exists in the IR spectra only for two epitaxial layer on p-type SiC substrate samples. This peak is related to oxygen vacancy centers in SiC, which are introduced in the CVD epitaxial growth process. At low temperature, the peak at 1105 cm(exp -1) shifts down and the peak at 905 cm(exp -1) shifts up for the epitaxial layer SiC samples. It can be explained that, at low temperatures, the stress increases due to the distorted bonds. The study shows that FTIR is a very effective method to evaluate low concentration impurities in SiC.

Lu, W. J.↗

Visualizing the Impurity Depletion Zone Around Holoferritin Crystals Growing in Gel with Ferritin Dimers

Colorless transparent apoferritin (Mr = 450KDa) crystals have been grown from gel with Cd(2+) as precipitant in the presence of reddish brown-colored ferritin dimers (Mr = 900KDa). In agreement with our previous measurements, showing preferential trapping of dimers (distribution coefficient K = 4), the apoferritin crystals become strongly colored while the gel solution around them became nearly colorless. The depth of the depletion with respect to the colored dimer impurity allowed us to visualize the impurity depletion zone. Depletion with respect to impurity as compared to the crystallizing protein is discussed.

Chernov, A. A.↗

Quantifying Main Trends in Lysozyme Nucleation: The Effects of Precipitant Concentration, Supersaturation and Impurities

Full factorial experimental design incorporating multi-linear regression analysis of the experimental data allows quick identification of main trends and effects using a limited number of experiments. In this study these techniques were employed to identify the effect of precipitant concentration, supersaturation, and the presence of an impurity, the physiological lysozyme dimer, on the nucleation rate and crystal dimensions of the tetragonal forin of chicken egg white lysozyme. Decreasing precipitant concentration, increasing supers aturation, and increasing impurity, were found to increase crystal numbers. The crystal axial ratio decreased with increasing precipitant concentration, independent of impurity.

Burke, Michael W.↗

Energetics of Single Substitutional Impurities in NiTi

Shape-memory alloys are of considerable current interest, with applications ranging from stents to Mars rover components. In this work, we present results on the energetics of single substitutional impurities in B2 NiTi. Specifically, energies of Pd, Pt, Zr and Hf impurities at both Ni and Ti sites are computed. All energies are computed using the CASTEP ab initio code, and, for comparison, using the quantum approximate energy method of Bozzolo, Ferrante and Smith. Atomistic relaxation in the vicinity of the impurities is investigated via quantum approximate Monte Carlo simulation, and in cases where the relaxation is found to be important, the resulting relaxations are applied to the ab initio calculations. We compare our results with available experimental work.

Good, Brian S.↗

Thermal Decomposition of an Impure (Roxbury) Siderite: Relevance to the Presence of Chemically Pure Magnetite Crystals in ALH84001 Carbonate Disks

The question of the origin of nanophase magnetite in Martian meteorite ALH84001 has been widely debated for nearly a decade. Golden et al. have reported producing nearly chemically pure magnetite from thermal decomposition of chemically impure siderite [(Fe, Mg, Mn)CO3]. This claim is significant for three reasons: first, it has been argued that chemically pure magnetite present in the carbonate disks in Martian meteorite ALH84001 could have formed by the thermal decomposition of the impure carbonate matrix in which they are embedded; second, the chemical purity of magnetite has been previously used to identify biogenic magnetite; and, third, previous studies of thermal decomposition of impure (Mg,Ca,Mn)-siderites, which have been investigated under a wide variety of conditions by numerous researchers, invariably yields a mixed metal oxide phase as the product and not chemically pure magnetite. The explanation for this observation is that these siderites all possess the same crystallographic structure (Calcite; R3c) so solid solutions between these carbonates are readily formed and can be viewed on an atomic scale as two chemically different but structurally similar lattices.

McKay, D.S.↗

CALPHAD Models to Guide Refractory Alloys Additive Manufacturing: In-Situ Compounds Formation, Nanoparticles, and Impurities Considerations

This technical memorandum (TM) seeks to model and discuss aspects of nanoparticle and micrometer-scale particle or ‘microparticle’ inclusions in refractory metal alloy manufacturing, via a currently used additive manufacturing (AM) method that results in equivalent wt.% addition of dissolved elements in the melt pool composition and subsequent formation of nanometer-scale MC and MO inclusions. Additionally, the authors begin to consider the effects of oxygen (O), a ubiquitous impurity, in AM; and seek to understand a combined optimization of alloying, nano- and micro strengthening and refinement, elemental additions, and even in-situ compounds and alloys species formation. To gain insights, this TM focuses on a pair of refractory alloys currently of interest to NASA: tungsten-rhenium-tantalum carbide (with O impurities) (W-Re-TaC(-O)) and tungsten-rhenium-tantalum-carbon (with O impurities) (W-Re-Ta-C(-O)), which are processed via powder bed fusion (PBF)-SLM.

ICME integrated computational materials engineerin↗

Polarization as a Discriminator of Light-Absorbing Impurities in or Above Snow

This conceptual study presents advanced radiative transfer computations of light polarization originating from a snowpack consisting of nonspherical grains and variable content of light-absorbing impurities, either embedded in the snowpack or (with the same optical properties) lofted above it in the form of atmospheric aerosols. The results highlight the importance of considering shapes other than spherical for the snow grains, which otherwise can lead to non-negligible errors in the retrieval of snow albedo from remote sensing observations. More importantly, it is found that polarimetric measurements provide a means to partition light-absorbing impurities embedded in the snowpack from absorbing aerosols aloft, a task traditionally prohibitive for sensors capable exclusively of measurements of total reflectance. Heritage techniques to obtain snow grain size from shortwave infrared observations of total reflectance are well established, as are those that leverage polarimetric, multiangular observations across the entire optical spectrum to characterize the optical and microphysical properties of atmospheric aerosols. The polarization signatures of near-infrared (e.g., 864 nm) observations carry critical information on snow grain shape. The prospected launch of space-borne polarimeters with proven accuracy, therefore, advocates for the development of data inversion schemes, to boost the accuracy of simultaneous retrievals of atmospheric and surface parameters in the polar and snow-covered regions, critical to climate studies.

light polarization↗

A fast algorithm for the calculation of junction capacitance and its application for impurity profile determination

A fast algorithm is described which calculates the space charge layer width and junction capacitance for an arbitrary impurity profile and for plane, cylindrical and spherical junctions. The algorithm is based on the abrupt space charge edge (ASCE) approximation. A method to use the algorithm for the determination of impurity profiles for two-sided junctions is presented. An expression is derived for the built-in voltage to be used for capacitance calculations with the ASCE approximation. Experimental evidence is given that the algorithm permits very accurate capacitance calculations and also predicts the exact temperature dependence of the junction capacitance.

Deman, H. J. J.↗

A fast algorithm for the calculation of junction capacitance and its application for impurity profile determination.

A fast algorithm is described which calculates the space charge layer width and junction capacitance for an arbitrary impurity profile and for plane, cylindrical and spherical junctions. The algorithm is based on the abrupt space charge edge (ASCE) approximation. A method to use the algorithm for the determination of impurity profiles for two-sided junctions is presented. An expression is derived for the built-in voltage to be used for capacitance calculations with the ASCE approximation. Experimental evidence is given that the algorithm permits very accurate capacitance calculations and also predicts the exact temperature dependence of the junction capacitance.

De Man, H. J. J.↗

Application of the MOS C-V technique to determine impurity concentrations and surface parameters on the diffused face of silicon solar cells

An experimental and theoretical investigation of the feasibility of using the MOS C-V (capacitance-voltage) technique to determine impurity and surface state concentrations on the diffused face of Si solar cells with Ta2O5 coatings. Impurity concentration 10 A from the diffused surface is found to be 2.9 times 10 to the 20th power per cu cm. Charge density in surface and oxide states is 2.1 times 10 to the 13th power per sq cm. These data agree with theoretical predictions.-

Weinberg, I.↗

Mossbauer effect studies in iron containing nonmagnetic impurities

Mossbauer parameters of dilute quaternary (Fe-XYZ) alloys where X, Y, Z, are Al, Ge, and La, respectively were studied. A comparison between the computed and the observed values indicates that changes in effective hyperfine field, outer peak widths and the isomer shift predicted on the basis of binary alloys of the individual impurities are equal, within experimental errors, to those obtained in quaternary (Fe-XYZ) alloys. The effects of simultaneously present dilute impurities are shown to be additive, independent of their respective electronic configurations.

Singh, J. J.↗

Use of accelerated helium-3 ions for determining oxygen and carbon impurities in some pure materials

Methods are developed for the determination of O impurity in Be and Si carbide and concurrent determination of C and O impurities in Si and W by irradiation with accelerated He-3 ions and subsequent activity measurements of C-11 and F-18 formed from C and O with the aid of a gamma-gamma coincidence spectrometer. Techniques for determining O in Ge and Ga arsenide with radiochemical separation of F-18 are also described.

Aleksandrova, G. I.↗

Analysis of the Effects of Impurities in Silicon

A solar cell fabrication and analysis program was conducted to determine the effects on the resultant solar cell efficiency of impurities intentionally incorporated into silicon. The program employed flight quality technologies and quality assurance to assure that variations in cell performance were due to the impurities incorporated in the silicon. The initial verification runs have resulted in an average AM0 cell efficiency of 12.8% at 25 C.

Wohlgemuth, J. H.↗

Effect of copper impurity on polycrystalline silicon solar cells

The presence of copper impurity, up to 10 to the 15th atoms/cc, in single crystal silicon has been shown to have no deleterious effect on the p-n junction solar cell performance. However, in polycrystalline silicon, copper atoms tend to migrate to the defect sites because of the structural sensitive properties of copper. This study was undertaken to investigate the influence of this behavior of copper impurity on the performance of p-n junction solar cells fabricated from structurally imperfect silicon. Two sets of polycrystalline silicon substrates containing copper were examined. In one set of samples, copper was incorporated during growth, whereas in the other, copper was diffused. Solar cells were fabricated on both the sets of substrates by a standard process. Dark and light I-V and spectral response characteristics of the cells were measured and compared with copper-free polycrystalline silicon solar cells. The results and the model are discussed.

Daud, T.↗