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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4

Advantages of an indirect semiconductor quantum well system for infrared detection

The infrared intersubband absorption process in quantum well systems with anisotropic bulk effective masses, which usually occurs in indirect semiconductors was analyzed. It is found that the anisotropic effective mass can be utilized to provide allowed intersubband transitions at normal incidence to the quantum well growth direction. This transition is known to be forbidden for cases of isotropic effective mass. This property can be exploited for infrared sensor application of quantum well structures by allowing direct illumination of large surface areas without using special waveguide structures. The 10-micron intersubband absorption in quantum wells made of the silicon-based system Si/Si(1-x)Ge(x) was calculated. It is found that it is readily possible to achieve an absorption constant of the order of 10,000/cm in these Si quantum wells with current doping technology.

Yang, Chan-Lon↗

Anomalous Polarization May Improve Infrared Detectors

New configurations proposed for quantum-well devices. Simplifies alignment, increases sensitivity, and opens up more possibilities in design of quantum-well detectors of infrared radiation. In detector made according to proposed concept, light incident broadside on front surface absorbed. No special waveguide structures required.

Yang, Chan-Lon↗

Self-Aligned Guard Rings For Schottky-Barrier Diodes

Proposed self-aligned guard ring increases active area of Schottky-barrier infrared detector. Concept developed for silicide Schottky-barrier diodes in which platinum silicide or iridium silicide Schottky-contacts provide cutoff wavelengths of about 6 or 10 micrometers. Grid of silicon dioxide doped with phosphorus etched on silicon wafer, and phosphorus from grid diffused into substrate, creating n-type guard rings. Silicide layers formed in open areas of grid. Overlap of guard rings and silicide layers small.

Lin, True-Lon↗

Proposed uses of laser light scattering instruments for polymerization studies

Microgravity offers a unique environment for studying polymer diffusion and polymer polymerization reactions. The absence of convection currents, which are the major mode of mixing at the molecular level on Earth, are eliminated or reduced in the microgravity environment. More importantly, the prediction of unique copolymer composition development in microgravity allows controlled formation of new compositions of matter. The absence of mixing at the molecular level should produce unique short block copolymers available for the first time for comonomer compositions which normally lead to random or long block copolymer under good mixing. The investigation of fundamental polymer diffusion and polymer polymerization processes in microgravity is proposed. This effort will involve fundamental studies of monomer and polymer diffusion; their effects on initiation, propagation, and especially termination kinetics rate constant; and the accurate evaluation of copolymerization reactivity ratios in microgravity. The experimental design is presented for these studies along with an evaluation technique for in situ monitoring of polymer diffusion and polymerization kinetics.

Mathias, Lon J.↗

The SP-100 space reactor as a power source for Mars exploration missions

This paper argues that many of the power requirements of complex, relatively long-duration space missions such as the exploration of Mars may best be met through the use of power systems which use nuclear reactors as a thermal energy source. The development of such a power system, the SP-100, and its application in Mars mission scenarios is described. The missions addressed include a freighter mission and a mission involving exploration of the Martian surface.

Isenberg, Lon↗

Molecular-Beam Epitaxy Of IrSi3

Molecular-beam epitaxy grows layers of iridium silicide (IrSi3) on silicon at temperatures of 630 to 800 degrees C. Particularly useful as photodetector material because it forms Schottky diodes having potential barriers of only 0.12 to 0.15 eV - lowest of any metal on silicon. Photodiodes sensitive to infrared radiation at wavelengths as large as 8 to 10 micrometers. New, lower formation temperature expected to enable growth of arrays of IrSi3/Si infrared detectors on Si wafers without thermally damaging image-processing circuitry integrated on wafers.

Lin, True-Lon↗

Doping To Reduce Base Resistances Of Bipolar Transistors

Modified doping profile proposed to reduce base resistance of bipolar transistors. A p/p+ base-doping profile reduces base resistance without reducing current gain. Proposed low/high base-doping profile realized by such low-temperature deposition techniques as molecular-beam epitaxy, ultra-high-vacuum chemical-vapor deposition, and limited-reaction epitaxy. Produces desired doping profiles without excessive diffusion of dopant.

Lin, True-Lon↗

Ir/IrSi3/Si Schottky-Barrier Infrared Detector

Quantum efficiency increased. Proposed Schottky-barrier infrared detector has double metallic layer of Ir and IrSi3 instead of single metallic layer of Ir, IrSi, or IrSi3. Offers advantages of both relatively high infrared absorption in thin film of Ir and stability and reproducibility of layer of IrSi3 in contact with Si. Also serves as barrier to chemical reactions between Ir overlayer and Si substrate. Detectors used to form focal-plane array integrated with charge-coupled-device-addressing and image-processing circuitry.

Lin, True-Lon↗

Si(1-x)Ge(x)/Si Infrared Photodiodes

Cutoff wavelengths depend on x and also adjusted somewhat via reverse bias. Si1-xGex photodiodes with cutoff wavelengths in and beyond practically important range of 8 to 12 micrometers made by molecular-beam epitaxy. Compatible (in terms of fabrication processes) with silicon readout circuitry, exhibit long-term stability, manufactured with sufficient uniformity for use in focal-plane arrays; and operate at temperatures approximately greater than 65 K, for which temperatures small, portable refrigerators available.

Lin, True-Lon↗

Si/IrSi3 Schottky-Barrier Infrared Detectors

Si/IrSi or Si/IrSi3 Schottky-barrier detector fabricated by stoichiometric codeposition of Ir and Si on p Si substrate. Includes p+ substrate contact, silicide electrode, and n Si guard ring, which suppresses leakage around periphery of silicide electrode. Part of continuing effort to develop imaging arrays of Schottky-barrier detectors operating at far-infrared wavelengths.

Lin, True-Lon↗

Laterally stacked Schottky diodes for infrared sensor applications

Laterally stacked Schottky diodes for infrared sensor applications are fabricated utilizing porous silicon having pores. A Schottky metal contract is formed in the pores, such as by electroplating. The sensors may be integrated with silicon circuits on the same chip with a high quantum efficiency, which is ideal for IR focal plane array applications due to uniformity and reproducibility.

Lin, True-Lon↗

Preliminary results for LDEF/HEPP thermal control samples

Sixty-five one inch by twelve inch strips of Kapton coated with various black paints, clear coatings, and thin film oxides were placed at three locations on the Long Duration Exposure Facility. Two sets were flown in the ram direction on top of the MLI blanket of the Cascade Variable Conductance Heat Pipe Experiment. Two other sets were flown on top of the MLI blanket of the Low Temperature Heat Pipe Experiment perpendicular to the ram direction. The last thirteen samples were taped to the perimeter of the HEPP power tray on the space end of the satellite. The solar absorptance and normal emittance measurements made on the 52 remaining samples are presented, as well as data on the above mentioned samples.

Kauder, Lon↗

Proposed advanced satellite applications utilizing space nuclear power systems

A review of the status of space nuclear reactor systems and their possible applications is presented. Such systems have been developed over the past twenty years and are capable of use in various military and civilian applications in the 5-1000-kWe power range. The capabilities and limitations of the currently proposed nuclear reactor systems are summarized. Statements of need are presented from DoD, DOE, and NASA. Safety issues are identified, and if they are properly addressed they should not pose a hindrance. Applications are summarized for the DoD, DOE, NASA, and the civilian community. These applications include both low- and high-altitude satellite surveillance missions, communications satellites, planetary probes, low- and high-power lunar and planetary base power systems, broadband global telecommunications, air traffic control, and high-definition television.

Bailey, Patrick G.↗

SiGe/Si heterojunction internal photoemission long-wavelength infrared detectors fabricated by molecular beam epitaxy

A new SiGe/Si heterojunction internal photoemission (HIP) long-wavelength infrared (LWIR) detector has been fabricated by molecular beam epitaxy (MBE). The detection mechanism of the SiGe/Si HIP detector is infrared absorption in the degenerately doped p+-SiGe layer followed by internal photoemission of photoexcited holes over a heterojunction barrier. By adjusting the Ge concentration in the SiGe layer, and, consequently, the valence band offset between SiGe and Si, the cutoff wavelength of SiGe HIP detectors can be extended into the LWIR (8-17-micron) regime. Detectors were fabricated by growing p+-SiGe layers using MBE on patterned p-type Si substrates. The SiGe layers were boron-doped, with concentrations ranging from 10 to the 19th/cu cm to 4 x 10 to the 20th/cu cm. Infrared absorption of 5-25 percent in a 30-nm-thick p+-SiGe layer was measured in the 3-20-micron range using a Fourier transform infrared spectrometer. Quantum efficiencies of 3-5 percent have been obtained from test devices in the 8-12-micron range.

Lin, True-Lon↗

Si1-XGex/Si-Heterojunction Internal-Photoemission Detectors

Cutoff wavelengths tailored by choice of Ge content. Infrared detectors based on internal photoemission at Si1-xGex/Si heterojunctions exhibited photoresponses at wavelengths from 2 to 12 micrometers in initial tests. Si1-xGex/Si-heterojunction internal-photoemission detectors tailored for use at wavelengths of order of 10 micrometers. Future developments expected to include integration of such devices with silicon readout circuitry to form infrared-imaging arrays. Imaging arrays operating in important wavelength range of 8 to 12 micrometers can be fabricated relatively inexpensively for use in outer-space, military, and industrial applications.

Lin, True-Lon↗

Fabrication of nanometer single crystal metallic CoSi2 structures on Si

Amorphous Co:Si (1:2 ratio) films are electron gun-evaporated on clean Si(111), such as in a molecular beam epitaxy system. These layers are then crystallized selectively with a focused electron beam to form very small crystalline Co/Si2 regions in an amorphous matrix. Finally, the amorphous regions are etched away selectively using plasma or chemical techniques.

Nieh, Kai-Wei↗

ISE: An Integrated Search Environment. The manual

Integrated Search Environment (ISE), a software package that implements hierarchical searches with meta-control, is described in this manual. ISE is a collection of problem-independent routines to support solving searches. Mainly, these routines are core routines for solving a search problem and they handle the control of searches and maintain the statistics related to searches. By separating the problem-dependent and problem-independent components in ISE, new search methods based on a combination of existing methods can be developed by coding a single master control program. Further, new applications solved by searches can be developed by coding the problem-dependent parts and reusing the problem-independent parts already developed. Potential users of ISE are designers of new application solvers and new search algorithms, and users of experimental application solvers and search algorithms. The ISE is designed to be user-friendly and information rich. In this manual, the organization of ISE is described and several experiments carried out on ISE are also described.

Chu, Lon-Chan↗

Mobile satellite regulation in the United States

During the last decade, the U.S. FCC has developed the regulatory structure for the provision of mobile services via satellite. In May 1989, the FCC awarded American Mobile Satellite Corporation (AMSC) a license to provide the full range of domestic mobile satellite services in the U.S. At that time, the FCC reaffirmed the U.S. mobile satellite industry structure and spectrum allocations that had been adopted previously. Also in May 1989, the FCC authorized the Communications Satellite Corporation (COMSAT), the U.S. Signatory to Inmarsat, to provide international aeronautical satellite service via the Inmarsat system. Earlier in 1989, the FCC permitted the use of Ku-band satellites to provide messaging and tracking services. In the mid-1980's, the FCC established the Radiodetermination Satellite Service and awarded licenses. Among the mobile satellite matters currently facing the FCC are whether additional spectrum should be allocated for domestic 'generic' mobile satellite services, the regulatory structure for the provision of mobile satellite service on an interim basis before AMSC launches its dedicated satellites, and whether to authorize a low earth orbit satellite system to provide mobile data service.

Levin, Lon C.↗