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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Integrating Data Centers and Grid Technologies at Scale

This presentation focuses on the challenge of integrating AI-driven data centers with the power grid at scale. It examines the AI data center capacity challenge and the role of new Medium Voltage Direct Current (MVDC) and other grid-enhancing technologies in enabling efficient and reliable power delivery. The session will highlight the National Laboratory of the Rockies' ARIES capabilities and planning tools, along with collaborative examples involving Verrus, Compass, and Schneider through the Agora test bed for grid-friendly data center evaluations, and ON. Energy for UPS evaluation. It will showcase the NLR Stable Grid Platform for studying oscillations caused by large-scale data centers, along with planning tools to assess grid security and reliability. Additionally, the presentation covers reconductoring strategies to increase grid capacity and explores innovative data center architectures, including the Advanced DC Architectures with Power-electronic Transformers (ADAPT) platform, which enables testing of complete DC architectures for data centers.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2025

Performance of the AstroPix Prototype Module for the Barrel Imaging Calorimeter at the ePIC Detector and in Space-Based Payloads

AstroPix is a high-voltage CMOS (HV-CMOS) monolithic active pixel sensor originally developed to enable precision gamma-ray imaging and spectroscopy in the medium-energy regime (~100 keV–100 MeV) based on the groundwork laid by ATLASpix and MuPix. It features a 500 μm pixel pitch, in-pixel amplification and digitization, and low power consumption (~3-4 mW/cm2), making it scalable for large-area, multilayer telescope detector planes. The detectors have a designed dynamic range of 25 keV to 700 keV. With these features, AstroPix meets the requirements of future space-based high-energy telescopes and the imaging layers of the Barrel Imaging Calorimeter (BIC) in the Electron-Proton/Ion Collider (ePIC) detector at the future Electron-Ion Collider (EIC). For the space-based payload, AstroPix is being integrated into sounding rocket and balloon payloads to demonstrate the technical readiness of the devices. For BIC, AstroPix-based imaging layers interleaved within the lead/scintillating-fiber (Pb/SciFi) sampling calorimeter provide granular shower imaging, enabling key performance features such as electron/pion or gamma/neutral pion separation. As part of the ongoing detector R&D efforts, we have been testing various AstroPix_v3 configurations: the single chip, a quad-chip assembly, a three-layer stack of quad chips, and a 9-chip module that represents the smallest prototype unit of the BIC imaging layer. This presentation will highlight recent performance test results from these AstroPix detector configurations.

Kim, Bobae (ORCID:0000000295396815)↗
DOE OSTI2023

20-kV GaN Switch Technology Demonstrated in High-Efficiency Medium-Voltage Power Module

GaN holds significant potential as a material for vertical p-n diodes, enabling the realization of devices with reverse breakdown voltages of 5 kV or higher. Carbon serves as the primary compensating dopant in the growth process, incorporated into GaN during metalorganic chemical vapor deposition (MOCVD) growth. The level of carbon incorporation depends on several factors, including growth rate, ammonia flow, temperature, pressure, and trimethylgallium (TMGa) flow. Through guided empirical modeling, the carbon incorporation in GaN growth could be predicted using a single parameter based on the ratio of ammonia flow to the growth rate. This model accurately predicts carbon concentrations ranging from 1x10 17 to 5x10 14 cm -3 while maximizing growth rates. Other extrinsic dopants have either been reduced below the threshold of consideration or modeled using similar single-parameter relationships. By identifying the dominant extrinsic dopants and accounting for them, an intrinsic defect with a concentration of 2.2x10 15 cm -3 was identified. By combining these relationships, growth conditions for n-GaN were optimized, resulting in electron concentrations as low as 1x10 15 cm -3 . Leveraging these techniques, p-n diodes were grown, achieving a reverse breakdown voltage as high as 3.1 kV.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Digital Filter Design for Point-on-Wave Sensors: Highlighting Frequency Response Limitations and Enhancing Grid Simulation Accuracy

Data is proving to be the backbone of today's and, more importantly, tomorrow's grid. As the system changes and introduces fast-acting devices like power electronics, overall observability tends to decrease from the utility point-of-view. This can be mitigated by adding more high-fidelity sensors onto the grid, although this incurs a cost. These sensors are never ideal, and each have unique frequency responses that may influence the data produced. This may, in turn, impact the protection and control of the power grid. This paper presents a methodology of representing these point-on-wave sensors digitally by estimating digital-filter representations of them, thereby introducing means of improving the sensor models used in electromagnetic-transient (EMT) simulations. This may help with identifying potential high-frequency, sensor-induced distortions, and system resonance compensation. Three commercial-grade medium-voltage point-on-wave sensors are utilized in a lab environment to obtain experimental frequency responses with a frequency sweep, and it is shown that both Infinite Impulse Response (IIR) and Finite Impulse Response (FIR) filter representations may approximate these responses with varying degrees of accuracy, though each has their own strengths and weaknesses. It is found that, in general, FIR estimation better approximates these sensors than IIR estimation does.

Wilson, Aaron [ORNL] (ORCID:0000000327331697)↗
DOE OSTI2021

Evaluation of Low-Pressure-Sintered Multi-Layer Substrates for Medium-Voltage SiC Power Modules: Preprint

Direct-bonded aluminum (DBA) multi-layer substrates have been fabricated using low-pressure silver sintering. These multi-layer substrates can be used to reduce the peak electric field strength inside power modules. This benefit is particularly important for medium-voltage silicon carbide (SiC) MOSFETs due to their higher operating voltages. The voiding content and defect density of the bond used to create the multi-layer substrate stackup is critical to the thermal performance and reliability of the power module. This work two low-pressure-assisted sintering techniques; one using nano-silver preform and the other using nano-silver paste to bond 23 mm by 49 mm DBA substrates. Scanning acoustic microscopy (C-SAM) is used to evaluate the bond quality after sintering. To evaluate the reliability of the sintered multi-layer substrates, passive thermal cycling from –40 °C to 200 °C was performed. Cross-sections were cut at pre-determined intervals and imaged with Scanning Electron Microscopy (SEM). After 1,000 thermal cycles, minor cracking was observed, but no failures have occurred.

28 EE - Advanced Manufacturing Office (EE-5A)↗
DOE OSTI2020

First lower hybrid current drive experiments on the WEST tokamak

The first lower hybrid current drive experiments in the full tungsten WEST tokamak are reported. Good wave coupling is found at rather low plasma current (q 95 ~4.3) and medium density (n e ~3×10 19 m -3 ). Reflection coefficient is in agreement with the expectation from the linear theory of coupling. With low reflection coefficients, 5MW was coupled for 2 seconds. High central electron temperature, up to 5keV, is achieved at ne = 3-4×10 19 m -3 . Flat and even hollow profiles of tungsten density are derived from the bolometry diagnostic. The stored thermal energy follows the H96-P scaling law with very slight degradation with density. The current drive efficiency has been assessed in low loop voltage (V L ~0.15V) discharges. Low plasma current operation and rather high effective charge (Z eff ~3) lead to modest current drive efficiency (η = 0.5-0.65 × 10 19 A.W -1 m -2 ). Long pulse operation (~30s) with high LHCD power (P LH =2.7MW) is achieved with stationary parameters, in particular electron and impurity densities, with the upper water-cooled tungsten divertor.

Goniche, M.↗
DOE OSTI2026

High Voltage High Power Traction Inverter Thermal Management

This project develops thermal management solutions for various 530-kW inverter topologies being developed by Oak Ridge National Laboratory (ORNL). The thermal management solutions will provide high thermal performance and be designed to keep inverter components (e.g., power modules, capacitors) within allowable operating temperatures to help meet the project objectives. Steady-state and transient thermal models of the inverter and cooling system will be created and used to predict component temperatures under various drive cycle conditions.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2021

Reliability Analysis of Large-Area, Low Pressure-Assisted Silver Sintering for Medium-Voltage Power Modules

Multi-layer insulating ceramic substrates can enable medium-voltage (MV) power modules with reduced peak electric field. This benefit is particularly important for MV silicon carbide (SiC) MOSFETs due to their higher operating voltages. Large-area, low-pressure assisted silver sintering is a potential solution for bonding substrates to create a multi-layer structure. The voiding content and defect density of the bond used to create the multi-layer substrate stack-up is critical to the reliability of the power module and the thermal performance, as this bond is in the primary path for heat dissipation in the power module structure. Here, samples of two-layer direct bonded aluminum (DBA) stacks have been fabricated and subjected to thermal cycling to analyze their reliability. Passive thermal cycling from -40 degrees C to 200 degrees C was performed. Cross-sections were cut at pre-determined intervals and imaged with Scanning Electron Microscopy (SEM). After 1000 thermal cycles, adhesive failures are observed between the sintered silver and the DBA surface. Cross-sections were cut and imaged via optical microscope and SEM. Thermal analyzer measurements are recorded on a 10-kV SiC power module utilizing the sintered DBA substrate stacks.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2022

Multiport Control with Partial Power Processing in Solid-State Transformer for PV, Storage, and Fast-Charging Electric Vehicle Integration

This article proposes a multiport control method to enable partial power processing (PPP) in a medium-voltage (MV) multiport solid-state transformer (SST). MV multiport SSTs are promising in integrating low-voltage DC sources or loads such as solar photovoltaic, energy storage, and electric vehicles into smart grids without bulky line-frequency transformers. Compared to voltage-source SST, current-source (CS) SST features single-stage isolated bidirectional AC/AC, AC/DC, or DC/DC conversion using an inductive DC link. For a multiport CS SST, it is revealed in this article that the PPP capability can be enabled through the proposed control without extra hardware, different from the case of voltage-source converters where special hardware architecture is required for the PPP. With the PPP, most power exchange between LV ports is processed by only a fraction of the entire conversion stage, leading to reduced DC-link current, volume, loss, and improved efficiency. The proposed multiport PPP control scheme is analyzed to verify the advantages across a wide voltage and power range against conventional full power processing (FPP) multiport control, using the soft-switching solid-state transformer (S4T) with reduced conduction loss as an example. Comparative experimental results based on a SiC three-port S4T prototype verify the effectiveness of the proposed PPP scheme against the FPP scheme under both steady state and dynamic conditions. Here, the DC-link current reduction is measured to be more than 36%. Significantly, the proposed multiport PPP control scheme is generic and applicable to any hard-switching or soft-switching CS SSTs without extra hardware.

14 SOLAR ENERGY↗
DOE OSTI2023

A new approach to the design of surface subsystems of polymeric insulators for HV and MV apparatus under AC voltage

The design of high voltage and medium voltage AC and DC standoff insulators, and, in general, of insulation systems where surface and interface properties are predominant factors, is based on specifications and standards that rely upon long-term experiences and lab testing. Surface insulating properties depend on electrical and thermal stresses, besides environmental factors, and the inception of extrinsic ageing phenomena, such as partial discharges, can be already a cause of reduced reliability and premature failure (for organic insulating materials). An innovative approach, based on field simulation, discharge modelling, and partial discharge inception measurements is presented by the authors, which can establish a solid basis to optimise insulation design for any type of supply voltage waveform. This method, the three-leg approach, is applied here to a cable system under AC sinusoidal voltage, but it can work for any type of insulation system, such as bushings, switch gears, transformers, rotating machines, and power electronics boards.

42 ENGINEERING↗
DOE OSTI2021

Current-Source Solid-State DC Transformer Integrating LVDC Microgrid, Energy Storage, and Renewable Energy Into MVDC Grid

Solid-state DC transformer to integrate low-voltage DC (LVDC) microgrid, wind turbine (WT) generator, photovoltaic (PV), and energy storage (ES) into medium-voltage (MV) direct-current (MVDC) distribution grids is attractive. This paper proposes current-source DC solid-state transformer (SST) for MVDC collection system in WT, PV, and ES farms or as an interface between the MVDC grid and the LVDC microgrid. Compared to conventional current-source converter (CSC) based SSTs, a switch reduction scheme on reverse-blocking device bridges is proposed to reduce device count and the number of devices on the DC-link current path. Importantly, the proposed switch reduction scheme is generic and can be applied to the DC ports of DC-AC, AC-DC, or DC-DC hard-switching or soft-switching CSC-based SSTs. Based on this scheme, the proposed current-source DC SSTs are derived, which have reduced electrolytic-capacitor-less DC-link. The proposed DC SSTs also achieve single-stage isolated DC-DC or DC-AC conversion, full-range zero-voltage switching (ZVS) for main switches, zero-current switching (ZCS) for resonant switches, and controlled dv/dt. The proposed DC SSTs, operating principles, predictive control method, the ZVS, and the controlled dv/dt under voltage buck-boost ranges are verified with MV simulations and an experimental prototype based on SiC MOSFETs, diodes, and a nanocrystalline transformer.

14 SOLAR ENERGY↗
DOE OSTI2022

Predictive Direct DC-Link Control for 7.2 kV Three-Port Low-Inertia Solid-State Transformer With Active Power Decoupling

Promising for applications including renewable energy and electric vehicle fast charging, a medium-voltage (MV) solid-state transformer (SST) typically has multiple modules series stacked, which requires the modules to be single phase. One critical issue of the single-phase SST is the double-line-frequency power ripple. Traditionally, large passives are used to buffer the ripple, resulting in significantly increased volume and cost. This article for the first time proposes active power decoupling (APD) for the SST and a predictive direct DC-link control method, using a current-source single-stage SST as an example. An electrolytic capacitor-less buffer port is used to absorb the ripple, which tolerates up to a 30% voltage ripple for small capacitance. The APD SST control is challenging. First, the current-source SST realizes isolation, DC link, and multiport in a single stage. Second, different from conventional SSTs or APD converters, the low-inertia DC link in this SST has a 40% switching ripple, which is difficult to stabilize. To address the control challenge, a direct DC-link control architecture and a predictive control method are proposed. Simulation and experimental results verify the proposed control method on an MV SiC modular soft-switching solid-state transformer (M-S4T) prototype. Here, the proposed APD reduces the SST volume by 53.8%. Importantly, the proposed concept is not limited to the M-S4T but is generic to other SSTs or APD converters.

14 SOLAR ENERGY↗
DOE OSTI2020

Soft-Switching Solid-State Transformer With Reduced Conduction Loss

Solid-state transformers (SSTs) are a promising solution photovoltaic (PV), wind, traction, data center, battery energy storage system (BESS), and fast charging electric vehicle (EV) applications. The traditional SSTs are typically three-stage, i.e., hard-switching cascaded multilevel rectifiers and inverters with dual active bridge (DAB) converters, which leads to bulky passives, low efficiency, and high electromagnetic interference (EMI). This article proposes a new soft-switching solid-state transformer (S4T). The S4T has full-range zero-voltage switching (ZVS), electrolytic capacitor-less dc link, and controlled dv/dt, which reduces EMI. The S4T comprises two reverse-blocking current-source inverter (CSI) bridges, auxiliary branches for ZVS, and transformer magnetizing inductor as a reduced dc link with 60% ripple. Compared with the prior S4T, an effective change on the leakage inductance diode is made to reduce the number of the devices on the main power path by 20% for significant conduction loss saving and retain the same functionality of damping the resonance between the leakage and resonant capacitors and recycling trapped leakage energy. The conduction loss saving is crucial, being the dominating loss mechanism in SSTs. Importantly, the proposed single-stage SST not only holds the potential for high power density and high efficiency but also has full functionality, e.g., multiport dc loads integration, voltage regulation, and reactive power compensation, unlike the traditional single-stage matrix SST. The S4T can achieve single-stage isolated bidirectional dc–dc, ac–dc, dc–ac, or ac–ac conversion. It can also be configured input-series output-parallel (ISOP) in a modular way for medium-voltage (MV) grids. Hence, the S4T is a promising candidate for the SST. The full functionality, e.g., voltage buck–boost, multiport, etc., and the universality of the S4T for the dc–dc, dc–ac, and ac–ac conversion are verified through the simulations and experiments of two-port and three-port MV prototypes based on 3.3 kV SiC MOSFETs in dc–dc, dc–ac, and ac–ac modes at 2 kV.

14 SOLAR ENERGY↗
DOE OSTI2022

Solid-State Transformer and Hybrid Transformer With Integrated Energy Storage in Active Distribution Grids: Technical and Economic Comparison, Dispatch, and Control

Solid-state transformer (SST) and hybrid transformer (HT) are promising alternatives to the line-frequency transformer (LFT) in smart grids. The SST features medium-frequency isolation, full controllability for voltage regulation, reactive power compensation, and the capability of battery energy storage system (BESS) integration with multiport configuration. The HT has a partially-rated converter for fractional controllability and can integrate a small BESS. Fast grid-edge voltage fluctuations from increased solar photovoltaic (PV) and electric vehicle (EV) penetration are difficult to manage for mechanical load tap changers. Hence, along with the trend towards more BESS in the grid, the controllability and the storage integration capability of the SST and HT are of strong interest. However, a review of literature shows existing SST and HT research is mostly at converter level, while system-level assessments are scarce. Assessing technical and economic impacts is critical to understanding the benefits and role of the SST and HT to guide future research, which is presented for the first time in this article. Experimental results from medium-voltage (MV) SST and MV HT prototypes are shown to confirm equipment-level feasibility, where the voltage controllability waveforms of a MV HT prototype are reported for the first time. Comparative simulations are performed on a modified IEEE 34-bus system. Here, a grid-model-less decentralized grid-edge voltage control method and a day-ahead BESS dispatch method are proposed for the SST and HT. The simulations show that the SST and HT with integrated storage can host more PV, achieve peak shaving, mitigate voltage fluctuation and reverse power flow, and support energy arbitrage for operational cost reduction, as compared to the LFT. Moreover, comprehensive analyses of net present value (NPV) and internal rate of return (IRR) are performed under different installed PV capacities, HT’s partial converter ratings, and BESS capacities. Sensitivities to future cost reductions of the PV and BESS are studied. Although the NPV and IRR are currently negative, 60% capital cost reduction or 150% revenue increase will make the SST and HT economically viable in the use case studied.

14 SOLAR ENERGY↗
DOE OSTI2024

AstroPix4 — a novel HV-CMOS sensor developed for space based experiments

For the proposed space based gamma-ray observatory All-sky Medium-Energy Gamma-ray Observatory eXplorer (AMEGO-X), a silicon tracker based on a novel High Voltage-CMOS (HV-CMOS) sensor called AstroPix, is currently being developed. Preliminary measurements with the first full reticle prototype AstroPix3 show that the power target of 1.5 mW/cm 2 can currently not be reached due to the digital consumption of 3.08 mW/cm 2 , while the analog power consumption of 1.04 mW/cm 2 and a break down voltage of over 350 V look promising. Based on these results, the design changes in AstroPix4, submitted in May 2023, are presented, containing changes to the time stamp generation and readout architecture. A digital power consumption below 0.25 mW/cm 2 is expected by removing the fast 200 MHz clock used to measure the time-over-threshold (ToT) and an LVDS receiver. A maximum resolution of 3.125 ns for time-of-arrival (ToA) and ToT is reached by adding per-pixel Flash-Time-to-Digital Converter (TDCs) controlled by a global delay-locked loop (DLL).

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Multi-Scale Thermal Analysis for Design of SiC-Based Medium Voltage Motor Drive: Preprint

This paper describes a multi-scale thermal analysis approach for the design of an air-cooled 1.7-kV SiC MOSFET-based medium-voltage variable-speed motor drive. The National Renewable Energy Laboratory supported the project objectives by providing thermal management design support to the project partner The Ohio State University (OSU). The scope of the models and limited resources required efficient and flexible thermal models to be developed. Two modeling techniques are described that significantly reduced model run time and enabled more complex models to be run faster while retaining needed accuracy. The first technique uses the effectiveness-NTU method to extract convection boundary conditions from a computational fluid dynamics (CFD) model that can be applied to a fast-running finite element analysis model. The second is a porous media technique that enables system-level CFD simulations that incorporate effects from heat exchangers (e.g., pin fin heat sinks) that run in a fraction of the time required for fully resolved CFD simulations. The multi-scale approach to the thermal analysis enabled fast and accurate simulation for the converter design ranging from the die level up to the full system with 36 submodules. The modeling results were validated against experimental data from system tests performed by OSU.

DIRECT ENERGY CONVERSION↗
DOE OSTI2026

Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions

Benefiting from the superior properties of wide-bandgap semiconductor materials, wide-bandgap power devices demonstrate exceptional switching performance, enabling more efficient and compact power electronics systems. However, ultrafast switching poses challenges to the reliability of the system in terms of severe oscillations and voltage overshoot, electromagnetic interference, and increased risk of partial discharge. By developing advanced power module packaging for fast-switching power devices, the above-mentioned challenges can be mitigated at the packaging level, enabling the full utilization of the fast-switching capability of wide-bandgap devices. Meanwhile, such technology also lays the groundwork for packaging next-generation power devices with even higher blocking voltage and faster switching speed. In this paper, a comprehensive review of ultrafast switching power modules has been made, including the benefits and status of ultrafast switching power modules, challenges brought by ultrafast switching, and promising technologies to address these challenges. In addition, future development trends and research gaps are also discussed in this paper. Furthermore, this review can serve as a reference for future wide-bandgap power module packaging design.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2025

Proton radiation resilience of CdSeTe photovoltaics: High predicted end-of-life performance for space applications

Two types of cadmium selenide telluride (CdSeTe) photovoltaic devices have been exposed to high-energy (150–1500 keV) protons with fluences ranging from 1 × 10 11 to 9 × 10 13 cm −2 . Pre- and post-irradiation current density vs voltage characteristic data were collected and analyzed. Arsenic-doped CdSeTe devices retained 80% of the power conversion efficiency (PCE) relative to control devices after exposure to 10 12 cm −2 650 keV protons, while copper-doped CdSeTe devices retained about 95% of the control PCE under the same irradiation condition. Displacement damage dose analysis coupled with simulations for duration-dependent performance in a medium Earth orbit space mission revealed superior PCE remaining factors, indicating greater resilience to proton bombardment than state-of-the-art multijunction III-V based space photovoltaic technologies.

CdTe solar cells↗