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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4

Fast Risetime Reverse Bias Pulse Failures in SiC PN Junction Diodes

SiC-based high temperature power devices are being developed for aerospace systems which will require high reliability. One behavior crucial to power device reliability. To date, it has necessarily been assumed to date is that the breakdown behavior of SiC pn junctions will be similar to highly reliable silicon-based pn junctions. Challenging this assumption, we report the observation of anomalous unreliable reverse breakdown behavior in moderately doped (2-3 x 10(exp 17) cm(exp -3)) small-area 4H- and 6H-SiC pn junction diodes at temperatures ranging from 298 K (25 C) to 873 K (600 C). We propose a mechanism in which carrier emission from un-ionized dopants and deep level defects leads to this unstable behavior. The fundamental instability mechanism is applicable to all wide bandgap semiconductors whose dopants are significantly un-ionized at typical device operating temperatures.

Neudeck, Philip G.↗

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (less than 250 V) 4H-SiC p(+)n Junction diodes: DC Properties - Part 1

Given the high density (approx. 10(exp 4)/sq cm) of elementary screw dislocations (Burgers vector = 1c with no hollow core) in commercial SiC wafers and epilayers, all appreciable current (greater than 1 A) SiC power devices will likely contain elementary screw dislocations for the foreseeable future. It is therefore important to ascertain the electrical impact of these defects, particularly in high-field vertical power device topologies where SiC is expected to enable large performance improvements in solid-state high-power systems. This paper compares the DC-measured reverse-breakdown characteristics of low-voltage (less than 250 V) small-area (less than 5 x 10(exp -4)/sq cm) 4H-SiC p(+)n diodes with and without elementary screw dislocations. Compared to screw dislocation-free devices, diodes containing elementary screw dislocations exhibited higher pre-breakdown reverse leakage currents, softer reverse breakdown I-V knees, and highly localized microplasmic breakdown current filaments. The observed localized 4H-SiC breakdown parallels microplasmic breakdowns observed in silicon and other semiconductors, in which space-charge effects limit current conduction through the local microplasma as reverse bias is increased.

Neudeck, Philip G.↗

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (<250 V) 4H-SiC p+n Junction Diodes - Part 1: DC Properties

Given the high density (approx. 10(exp 4)/sq cm) of elementary screw dislocations (Burgers vector = lc with no hollow core) in commercial SiC wafers and epilayers, all appreciable current (greater than 1 A) SiC power devices will likely contain elementary screw dislocations for the foreseeable future. It is therefore important to ascertain the electrical impact of these defects, particularly in high-field vertical power device topologies where SiC is expected to enable large performance improvements in solid-state high-power systems. This paper compares the DC-measured reverse-breakdown characteristics of low-voltage (less than 250 V) small-area (less than 5 x 10(exp -4) sq cm) 4H-SiC p(+)n diodes with and without elementary screw dislocations. Compared to screw dislocation-free devices, diodes containing elementary screw dislocations exhibited higher pre-breakdown reverse leakage currents, softer reverse breakdown I-V knees, and highly localized microplasmic breakdown current filaments. The observed localized 4H-SiC breakdown parallels microplasmic breakdowns observed in silicon and other semiconductors, in which space-charge effects limit current conduction through the local microplasma as reverse bias is increased.

Neudeck, Philip G.↗

A technique for optimizing the design of power semiconductor devices

A technique is described that provides a basis for predicting whether any device design change will improve or degrade the unavoidable trade-off that must be made between the conduction loss and the turn-off speed of fast-switching high-power thyristors. The technique makes use of a previously reported method by which, for a given design, this trade-off was determined for a wide range of carrier lifetimes. It is shown that by extending this technique, one can predict how other design variables affect this trade-off. The results show that for relatively slow devices the design can be changed to decrease the current gains to improve the turn-off time without significantly degrading the losses. On the other hand, for devices having fast turn-off times design changes can be made to increase the current gain to decrease the losses without a proportionate increase in the turn-off time. Physical explanations for these results are proposed.

Schlegel, E. S.↗

Accelerated Aging System for Prognostics of Power Semiconductor Devices

Prognostics is an engineering discipline that focuses on estimation of the health state of a component and the prediction of its remaining useful life (RUL) before failure. Health state estimation is based on actual conditions and it is fundamental for the prediction of RUL under anticipated future usage. Failure of electronic devices is of great concern as future aircraft will see an increase of electronics to drive and control safety-critical equipment throughout the aircraft. Therefore, development of prognostics solutions for electronics is of key importance. This paper presents an accelerated aging system for gate-controlled power transistors. This system allows for the understanding of the effects of failure mechanisms, and the identification of leading indicators of failure which are essential in the development of physics-based degradation models and RUL prediction. In particular, this system isolates electrical overstress from thermal overstress. Also, this system allows for a precise control of internal temperatures, enabling the exploration of intrinsic failure mechanisms not related to the device packaging. By controlling the temperature within safe operation levels of the device, accelerated aging is induced by electrical overstress only, avoiding the generation of thermal cycles. The temperature is controlled by active thermal-electric units. Several electrical and thermal signals are measured in-situ and recorded for further analysis in the identification of leading indicators of failures. This system, therefore, provides a unique capability in the exploration of different failure mechanisms and the identification of precursors of failure that can be used to provide a health management solution for electronic devices.

Celaya, Jose R.↗

CHARGING OF DEVICES BY MICROWAVE POWER BEAMING

A system for providing wireless, charging power and/or primary power to electronic/electrical devices is described whereby microwave energy is employed. Microwave energy is focused by a power transmitter comprising one or more adaptively-phased microwave array emitters onto a device to be charged. Rectennas within the device to be charged receive and rectify the microwave energy and use it for battery charging and/or for primary power. A locator signal generated by the device to be charged is analyzed by the system to determine the location of the device to be charged relative to the microwave array emitters, permitting thc microwave energy to be directly specifically towards the device to be charged. Backscatter detectors respond to backscatter energy reflected off of any obstacle between the device to be charged and the microwave array emitters. Power to any obstructed microwave array emitter is reduced until the obstruction is removed. Optionally, data can be modulated onto microwave energy beams produced by the array emitter and demodulated by the device, thereby providing means of data communication from the power transmitter to the device. Similarly, data can be modulated onto the locator signal and demodulated in the power transmitter, thereby providing means of data communication from the device to the power transmitter.

Landis, Geoffrey A.↗

Harmonic analysis of nonlinear devices on spacecraft power systems

A nonlinear device modeling algorithm (NOLID) has been developed for use in spacecraft power system analysis. This algorithm is designed to explore the effects of nonlinear devices and loads on a spacecraft power system. Application of this harmonic modeling algorithm in spacecraft power system management programs such as harmonic power flow analysis packages is discussed. It is shown that the NOLID algorithm can be applied in conjunction with a harmonic power flow to give a more accurate description of system state.

Williamson, Frank↗

Non-contacting power transfer device

A transformer for coupling AC electrical energy from a stationary element to a rotating element without the use of sliding contacts is described. The transformer is of the rotary type and includes a ferrite core and two primary windings which are stationary with respect to a seconary winding which rotates within an annular cavity adjacent an axial bore in the core. The core is comprised of two cup type core halves. Electrical connection to the secondary winding is made through a split bobbin assembly which couples to a coaxial shaft assembly located in the axial bore. The electrical coupling to the coaxial shaft assembly is made through a continuous transverse channel connecting the axial bore with the annular cavity. The transverse channel forms a single air gap; however, it is not open directly to free space but is shielded by the magnetic permeable material of the core halves.

Studer, P. A.↗

Skutterudite Compounds For Power Semiconductor Devices

New semiconducting materials with p-type carrier mobility values much higher than state-of-art semiconductors discovered. Nine compounds, antimonides CoSb(sub3), RhSb(sub3), IrSb(sub3), arsenides CoAs(sub3), RhAs(sub3), IrAs(sub3), and phosphides CoP(sub3), RhP(sub3) and IrP(sub3), exhibit same skutterudite crystallographic structure and form solid solutions of general composition Co(1-x-y)RH(x)Ir(y)P(1-w-z)As(w)Sb(z). Materials exhibit high hole mobilities, high doping levels, and high electronic figures of merit. Some compositions show great potential for application to thermoelectric devices.

Fleurial, Jean-Pierre↗

Robust Light Filters Support Powerful Imaging Devices

Infrared (IR) light filters developed by Lake Shore Cryotronics Inc. of Westerville, Ohio -- using SBIR funding from NASA s Jet Propulsion Laboratory and Langley Research Center -- employ porous silicon and metal mesh technology to provide optical filtration even at the ultra-low temperatures required by many IR sensors. With applications in the astronomy community, Lake Shore s SBIR-developed filters are also promising tools for use in terahertz imaging, the next wave of technology for applications like medical imaging, the study of fragile artworks, and airport security.

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Thermoelectric Devices Cool, Power Electronics

Nextreme Thermal Solutions Inc., based in Research Triangle Park, North Carolina, licensed thermoelectric technology from NASA s Jet Propulsion Laboratory. This has allowed the company to develop cutting edge, thin-film thermoelectric coolers that effective remove heat generated by increasingly powerful and tightly packed microchip components. These solid-state coolers are ideal solutions for applications like microprocessors, laser diodes, LEDs, and even potentially for cooling the human body. Nextreme s NASA technology has also enabled the invention of thermoelectric generators capable of powering technologies like medical implants and wireless sensor networks.

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Silicon device performance measurements to support temperature range enhancement

Semiconductor power devices are typically rated for operation below 150 C. Little data is known for power semiconductors over 150 C. In most cases, the device is derated to zero operating power at 175 C. At the high temperature end of the temperature range, the intrinsic carrier concentration increases to equal the doping concentration level and the silicon behaves as an intrinsic semiconductor. The increase in intrinsic carrier concentration results in a shift of the Fermi level toward mid-bandgap at elevated temperatures. This produces a shift in devices characteristics as a function of temperature. By increasing the doping concentration higher operating temperatures can be achieved. This technique was used to fabricate low power analog and digital devices in silicon with junction operating temperatures in excess of 300 C. Additional temperature effects include increased p-n junction leakage with increasing temperature, resulting in increased resistivity. The temperature dependency of physical properties results in variations in device characteristics. These must be quantified and understood in order to develop extended temperature range operation.

Bromstead, James↗

Modified Reference SPS with Solid State Transmitting Antenna

The development of solid state microwave power amplifiers for a solar power satellite transmitting antenna is discussed. State-of-the-art power-added efficiency, gain, and single device power of various microwave solid state devices are compared. The GaAs field effect transistors and the Si-bipolar transistors appear potentially feasible for solar power satellite use. The integration of solid state devices into antenna array elements is examined and issues concerning antenna integration and consequent satellite configurations are examined.

Woodcock, G. R.↗

SiC Multi-Chip Power Modules as Power-System Building Blocks

The term "SiC MCPMs" (wherein "MCPM" signifies "multi-chip power module") denotes electronic power-supply modules containing multiple silicon carbide power devices and silicon-on-insulator (SOI) control integrated-circuit chips. SiC MCPMs are being developed as building blocks of advanced expandable, reconfigurable, fault-tolerant power-supply systems. Exploiting the ability of SiC semiconductor devices to operate at temperatures, breakdown voltages, and current densities significantly greater than those of conventional Si devices, the designs of SiC MCPMs and of systems comprising multiple SiC MCPMs are expected to afford a greater degree of miniaturization through stacking of modules with reduced requirements for heat sinking. Moreover, the higher-temperature capabilities of SiC MCPMs could enable operation in environments hotter than Si-based power systems can withstand. The stacked SiC MCPMs in a given system can be electrically connected in series, parallel, or a series/parallel combination to increase the overall power-handling capability of the system. In addition to power connections, the modules have communication connections. The SOI controllers in the modules communicate with each other as nodes of a decentralized control network, in which no single controller exerts overall command of the system. Control functions effected via the network include synchronization of switching of power devices and rapid reconfiguration of power connections to enable the power system to continue to supply power to a load in the event of failure of one of the modules. In addition to serving as building blocks of reliable power-supply systems, SiC MCPMs could be augmented with external control circuitry to make them perform additional power-handling functions as needed for specific applications: typical functions could include regulating voltages, storing energy, and driving motors. Because identical SiC MCPM building blocks could be utilized in a variety of ways, the cost and difficulty of designing new, highly reliable power systems would be reduced considerably. Several prototype DC-to-DC power-converter modules containing SiC power-switching devices were designed and built to demonstrate the feasibility of the SiC MCPM concept. In anticipation of a future need for operation at high temperature, the circuitry in the modules includes high-temperature inductors and capacitors. These modules were designed to be stacked to construct a system of four modules electrically connected in series and/or parallel. The packaging of the modules is designed to satisfy requirements for series and parallel interconnection among modules, high power density, high thermal efficiency, small size, and light weight. Each module includes four output power connectors two for serial and two for parallel output power connections among the modules. Each module also includes two signal connectors, electrically isolated from the power connectors, that afford four zones for signal interconnections among the SOI controllers. Finally, each module includes two input power connectors, through which it receives power from an in-line power bus. This design feature is included in anticipation of a custom-designed power bus incorporating sockets compatible with snap-on type connectors to enable rapid replacement of failed modules.

Lostetter, Alexander↗

High-Temperature Electronics: A Role for Wide Bandgap Semiconductors?

It is increasingly recognized that semiconductor based electronics that can function at ambient temperatures higher than 150 C without external cooling could greatly benefit a variety of important applications, especially-in the automotive, aerospace, and energy production industries. The fact that wide bandgap semiconductors are capable of electronic functionality at much higher temperatures than silicon has partially fueled their development, particularly in the case of SiC. It appears unlikely that wide bandgap semiconductor devices will find much use in low-power transistor applications until the ambient temperature exceeds approximately 300 C, as commercially available silicon and silicon-on-insulator technologies are already satisfying requirements for digital and analog very large scale integrated circuits in this temperature range. However, practical operation of silicon power devices at ambient temperatures above 200 C appears problematic, as self-heating at higher power levels results in high internal junction temperatures and leakages. Thus, most electronic subsystems that simultaneously require high-temperature and high-power operation will necessarily be realized using wide bandgap devices, once the technology for realizing these devices become sufficiently developed that they become widely available. Technological challenges impeding the realization of beneficial wide bandgap high ambient temperature electronics, including material growth, contacts, and packaging, are briefly discussed.

Neudeck, Philip G.↗

Model experiments to evaluate vortex dissipation devices proposed for installation on or near aircraft runways

The effectiveness of various vortex dissipation devices proposed for installation on or near aircraft runways is evaluated on basis of results of experiments conducted with a 0.03-scale model of a Boeing 747 transport aircraft in conjunction with a simulated runway. The test variables included type of vortex dissipation device, mode of operation of the powered devices, and altitude, lift coefficient and speed of the generating aircraft. A total of fifteen devices was investigated. The evaluation is based on time sequence photographs taken in the vertical and horizontal planes during each run.

Kohl, R. E.↗

Satellite Communications Technology Database

The Satellite Communications Technology Database is a compilation of data on state-of-the-art Ka-band technologies current as of January 2000. Most U.S. organizations have not published much of their Ka-band technology data, and so the great majority of this data is drawn largely from Japanese, European, and Canadian publications and Web sites. The data covers antennas, high power amplifiers, low noise amplifiers, MMIC devices, microwave/IF switch matrices, SAW devices, ASIC devices, power and data storage. The data herein is raw, and is often presented simply as the download of a table or figure from a site, showing specified technical characteristics, with no further explanation.

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