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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS2004

Multi-functional micro electromechanical devices and method of bulk manufacturing same

A method of bulk manufacturing SiC sensors is disclosed and claimed. Materials other than SiC may be used as the substrate material. Sensors requiring that the SiC substrate be pierced are also disclosed and claimed. A process flow reversal is employed whereby the metallization is applied first before the recesses are etched into or through the wafer. Aluminum is deposited on the entire planar surface of the metallization. Photoresist is spun onto the substantially planar surface of the Aluminum which is subsequently masked (and developed and removed). Unwanted Aluminum is etched with aqueous TMAH and subsequently the metallization is dry etched. Photoresist is spun onto the still substantially planar surface of Aluminum and oxide and then masked (and developed and removed) leaving the unimidized photoresist behind. Next, ITO is applied over the still substantially planar surface of Aluminum, oxide and unimidized photoresist. Unimidized and exposed photoresist and ITO directly above it are removed with Acetone. Next, deep reactive ion etching attacks exposed oxide not protected by ITO. Finally, hot phosphoric acid removes the Al and ITO enabling wires to connect with the metallization. The back side of the SiC wafer may be also be etched.

Okojie, Robert S.↗
NASA NTRS2000

Fracture Tests of Etched Components Using a Focused Ion Beam Machine

Many optical MEMS device designs involve large arrays of thin (0.5 to 1 micron components subjected to high stresses due to cyclic loading. These devices are fabricated from a variety of materials, and the properties strongly depend on size and processing. Our objective is to develop standard and convenient test methods that can be used to measure the properties of large numbers of witness samples, for every device we build. In this work we explore a variety of fracture test configurations for 0.5 micron thick silicon nitride membranes machined using the Reactive Ion Etching (RIE) process. Testing was completed using an FEI 620 dual focused ion beam milling machine. Static loads were applied using a probe. and dynamic loads were applied through a piezo-electric stack mounted at the base of the probe. Results from the tests are presented and compared, and application for predicting fracture probability of large arrays of devices are considered.

Kuhn, Jonathan, L.↗
DOE OSTI2023

Advanced low blaze angle x-ray gratings via nanoimprint replication and plasma etch

We developed a new method of making ultra-low blaze angle diffraction gratings for x-ray applications. The method is based on reduction of the blaze angle of a master grating by nanoimprint replication followed by a plasma etch. A master blazed grating with a relatively large blaze angle is fabricated by anisotropic wet etching of a Si single crystal substrate. The surface of the master grating is replicated by a polymer material on top of a quartz substrate by nanoimprinting. Then a second nanoimprinting is performed using the 1st replica as a mold to replicate the saw-tooth surface into a resist layer on top of a Si grating substrate. A reactive ion etch is used to transfer the grating grooves into the Si substrate. The plasma etch provides reduction of the groove depth by a factor defined by the ratio of the etch rates for the resist and Si. We demonstrate reduction of the blaze angle of a master grating by a factor of 5 during fabrication of a 200 lines/mm blazed grating with a blaze angle of 0.2°. We investigated the quality and performance of the fabricated low blaze angle gratings and evaluate process accuracy and reproducibility. The new blaze angle reduction method preserves the planarity of the optical surface of the grating substrate and at the same time provides improvement in the grating groove quality during the reduction process.

47 OTHER INSTRUMENTATION↗
NASA NTRS2010

Fabrication and Modification of Nanoporous Silicon Particles

Silicon-based nanoporous particles as biodegradable drug carriers are advantageous in permeation, controlled release, and targeting. The use of biodegradable nanoporous silicon and silicon dioxide, with proper surface treatments, allows sustained drug release within the target site over a period of days, or even weeks, due to selective surface coating. A variety of surface treatment protocols are available for silicon-based particles to be stabilized, functionalized, or modified as required. Coated polyethylene glycol (PEG) chains showed the effective depression of both plasma protein adsorption and cell attachment to the modified surfaces, as well as the advantage of long circulating. Porous silicon particles are micromachined by lithography. Compared to the synthesis route of the nanomaterials, the advantages include: (1) the capability to make different shapes, not only spherical particles but also square, rectangular, or ellipse cross sections, etc.; (2) the capability for very precise dimension control; (3) the capacity for porosity and pore profile control; and (4) allowance of complex surface modification. The particle patterns as small as 60 nm can be fabricated using the state-of-the-art photolithography. The pores in silicon can be fabricated by exposing the silicon in an HF/ethanol solution and then subjecting the pores to an electrical current. The size and shape of the pores inside silicon can be adjusted by the doping of the silicon, electrical current application, the composition of the electrolyte solution, and etching time. The surface of the silicon particles can be modified by many means to provide targeted delivery and on-site permanence for extended release. Multiple active agents can be co-loaded into the particles. Because the surface modification of particles can be done on wafers before the mechanical release, asymmetrical surface modification is feasible. Starting from silicon wafers, a treatment, such as KOH dipping or reactive ion etching (RIE), may be applied to make the surface rough. This helps remove the nucleation layer. A protective layer is then deposited on the wafer. The protective layer, such as silicon nitride film or photoresist film, protects the wafer from electrochemical etching in an HF-based solution. A lithography technique is applied to pattern the particles onto the protective film. The undesired area of the protective film is removed, and the protective film on the back side of the wafer is also removed. Then the pattern is exposed to HF/surfactant solution, and a larger DC electrical current is applied to the wafers for a selected time. This step removes the nucleation layer. Then a DC current is applied to generate the nanopores. Next, a large electrical current is applied to generate a release layer. The particles are mechanically suspended in the solvent and collected by filtration or centrifuge.

Ferrari, Mauro↗
NASA NTRS2007

Design and Fabrication Highlights Enabling a 2 mm, 128 Element Bolometer Array for GISMO

The Backshort-Under-Grid (BUG) superconducting bolometer array architecture is intended to be highly versatile, operating in a large range of wavelengths and background conditions. We have undertaken a three-year program to develop key technologies and processes required to build kilopixel arrays. To validate the basic array design and to demonstrate its applicability for future kilopixel arrays, we have chosen to demonstrate a 128 element bolometer array optimized for 2 mm wavelength using a newly built Goddard instrument, GISMO (Goddard /RAM Superconducting 2-millimeter Observer). The arrays are fabricated using batch wafer processing developed and optimized for high pixel yield, low noise, and high uniformity. The molybdenum-gold superconducting transition edge sensors are fabricated using batch sputter deposition and are patterned using dry etch techniques developed at Goddard. With a detector pitch of 2 mm 8x16 array for GISMO occupies nearly one half of the processing area of a 100 mm silicon-on-insulator starting wafer. Two such arrays are produced from a single wafer along with witness samples for process characterization. To provide thermal isolation for the detector elements, at the end of the process over 90% of the silicon must be removed using deep reactive ion etching techniques. The electrical connections for each bolometer element are patterned on the top edge of the square grid supporting the array. The design considerations unique to GISMO, key fabrication challenges, and laboratory experimental results will be presented.

Allen, Christine↗
NASA NTRS2019

Fabrication of Phononic Filter Structures for Far-IR/sub-mm Detector Applications

A photon noise limited sub-mm/far-IR cold telescope in space will require detectors with noise equivalent power (NEP) less than 1x10-19W/Hz1/2for imaging applications and at least an order of magnitude lower for spectroscopic studies. The detector NEP can be reduced by lowering the operation temperature and improving the thermal isolation between the bolometer and a heat bath. We report on the fabrication of membrane isolated transition edge sensor bolometers incorporating compact (<50 μm) thermal isolation beams based on phononic filters. Phononic filters are created by etching quasi-periodic nanoscale structures into supporting thermo-mechanical beams. The cross-sectional dimensions of the etched features are less than the thermal wavelength at the operating temperature, enabling coherent phonon transport to take place in one dimension. The phonon stop-band can be tuned by adjusting the scale of the quasi-periodic structures. Cascading multiple filter stages can increase bandwidth and provide improved thermal isolation similar to the function of a multi-stage electrical filter. We describe the fabrication of AlMn based transition edge sensor bolometers on silicon and silicon nitride membranes isolated by one-and two-dimensional phononic filters. The phononic filters are patterned through electron beam lithography and isolated with deep reactive ion etching.

Phononic↗
NASA NTRS2005

In Situ Electrochemical Deposition of Microscopic Wires

A method of fabrication of wires having micron and submicron dimensions is built around electrochemical deposition of the wires in their final positions between electrodes in integrated circuits or other devices in which the wires are to be used. Heretofore, nanowires have been fabricated by a variety of techniques characterized by low degrees of controllability and low throughput rates, and it has been necessary to align and electrically connect the wires in their final positions by use of sophisticated equipment in expensive and tedious post-growth assembly processes. The present method is more economical, offers higher yields, enables control of wire widths, and eliminates the need for post-growth assembly. The wires fabricated by this method could be used as simple electrical conductors or as transducers in sensors. Depending upon electrodeposition conditions and the compositions of the electroplating solutions in specific applications, the wires could be made of metals, alloys, metal oxides, semiconductors, or electrically conductive polymers. In this method, one uses fabrication processes that are standard in the semiconductor industry. These include cleaning, dry etching, low-pressure chemical vapor deposition, lithography, dielectric deposition, electron-beam lithography, and metallization processes as well as the electrochemical deposition process used to form the wires. In a typical case of fabrication of a circuit that includes electrodes between which microscopic wires are to be formed on a silicon substrate, the fabrication processes follow a standard sequence until just before the fabrication of the microscopic wires. Then, by use of a thermal SiO-deposition technique, the electrodes and the substrate surface areas in the gaps between them are covered with SiO. Next, the SiO is electron-beam patterned, then reactive-ion etched to form channels having specified widths (typically about 1 m or less) that define the widths of the wires to be formed. Drops of an electroplating solution are placed on the substrate in the regions containing the channels thus formed, then the wires are electrodeposited from the solution onto the exposed portions of the electrodes and into the channels. The electrodeposition is a room-temperature, atmospheric-pressure process. The figure shows an example of palladium wires that were electrodeposited into 1-mm-wide channels between gold electrodes.

Yun, Minhee↗
NASA NTRS1984

Etching of diamond with argon and oxygen ion beams

The angular dependences of the sputter yield of (100) single crystal diamond under argon and oxygen ion beams were investigated. For argon ion beams a large increase in the sputter yield was observed as the angle of incidence was increased from the normal, with a maximum occurring at approximately 60 deg from the normal. The magnitude of the increase and the angle at which the maximum was observed were dependent on the ion energy and species. The shape of the yield versus angle of incidence curve indicated the presence of a highly damaged surface layer. Large deviations from this curve were observed where ion incidence was along channeling directions. Studies with oxygen ion beams showed almost no angular dependence for 500 eV ions while at an energy of 1000 eV the angular dependence was similar to that for argon ions. At normal incidence the yield for 500 eV oxygen ions was seven times larger than that for 500 eV argon ions. For 1000 eV oxygen and argon ions the corresponding ratio is only 2.5. Implications for mechanisms of inert and reactive ion etching are discussed. Application of the data to ion beam shaping of diamond tips for ultrahigh pressure research is discussed.

Whetten, T. J.↗
DOE OSTI2025

Electronic Melting of Silicon in Nanostructures using X-ray Forbidden Bragg Reflections

Abstract We carried out a short beamtime at the Pohang Accelerator Laboratory x-ray Free Electron Laser to perform a pump-probe (PP) laser excitation diffraction experiment on the silicon (222) forbidden Bragg peak. To limit the x-ray penetration, we used a “device layer” silicon film wafer bonded to a silicon substrate. The sample, specially fabricated by MEMC Electronic Materials, had a Si(100) substrate bonded to a 170 nm Si(100) film rotated at 45° for crystallographic isolation. A second sample was reactive-ion-etched down to 52 nm thickness. In the silicon lattice, the covalent bonds are seen exclusively at the 222 reflection. Upon laser excitation, these electrons are expected to be excited to the valence band on femtosecond electronic time scales. The Si(222) reflection is therefore expected to be extinguished on this fast time scale, while the electron–phonon coupled acoustic response is determined by the lattice dynamics. The latter is determined by the speed of sound over the device thickness, which is in the mid-picosecond range.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2022

Using electron channeling contrast imaging to inform and improve the growth of high-efficiency GaAs solar cells on nanopatterned GaAs substrates

Patterned substrates provide opportunities for reducing the cost of high-efficiency III-V devices by incorporating mechanically weak layers beneficial for substrate reuse (e.g. by spalling). In this work, the functionality of electron channeling contrast imaging (ECCI) as a tool to efficiently understand and mitigate defect formation is exemplified by developing a process in which high-quality III-V material can be grown on nanopatterned GaAs substrates. Reactive ion etching used in the patterning process was found to damage the GaAs substrate surface, leading to the formation of stacking faults in the epitaxial material as observed by ECCI. Etching the patterned substrates in a 1 NH4OH: 1 H2O2: 50 DI H2O solution for 10 s prior to growth removed the substrate surface damage and stacking faults were no longer present. Growth of solar cell device structures initially produced samples with many macroscale flaws creating shunts in the devices, which complicated the assessment of material quality by device measurements. However, ECCI revealed that the epitaxial material surrounding macroscale flaws was free from any crystallographic defects such as stacking faults and threading dislocations. With this knowledge, we focused on refining the patterning process to eliminate the macroscale flaws. Solar cells were then grown on the improved nanopatterned substrates and exhibited device structures with defect densities less than 5 x 105 cm -2 and average conversion efficiency of 24.8%, nearly identical to devices grown on unpatterned epi-ready substrates (25.0%).

14 SOLAR ENERGY↗
DOE OSTI2025

Pulse-length dependence of the laser-induced damage behavior of a fused-silica antireflective metasurface

A broadband, antireflective metasurface optic on a silica substrate is subjected to laser-induced damage-threshold measurements to quantify its performance under exposure to high-intensity/fluence laser pulses in the near-infrared at four pulse durations, ranging from 20 fs to 1.4 ns. The performance of the metasurface is benchmarked against that obtained from an equivalent bare fused-silica substrate that did not receive reactive-ion-etching metasurface treatment. Results showed that the damage threshold of the antireflective metasurface was always lower than the input-surface damage threshold of the untreated substrate. The damage initiations with nanosecond and picosecond pulses resulted in localized modification and removal of the nanostructures, whereas the onset of laser-induced modification with 20-fs pulses in a vacuum environment manifested as changes in the optical and electronic properties without significant material removal. The broader goal of this work is to develop a preliminary understanding of the laser-induced failure mechanisms of silica-based metasurface optics.

antireflection↗
DOE OSTI2024

Tantalum pentoxide: a new material platform for high-performance dielectric metasurface optics in the ultraviolet and visible region

Dielectric metasurfaces, composed of planar arrays of subwavelength dielectric structures that collectively mimic the operation of conventional bulk optical elements, have revolutionized the field of optics by their potential in constructing high-efficiency and multi-functional optoelectronic systems on chip. The performance of a dielectric metasurface is largely determined by its constituent material, which is highly desired to have a high refractive index, low optical loss and wide bandgap, and at the same time, be fabrication friendly. Here, we present a new material platform based on tantalum pentoxide (Ta 2 O 5 ) for implementing high-performance dielectric metasurface optics over the ultraviolet and visible spectral region. This wide-bandgap dielectric, exhibiting a high refractive index exceeding 2.1 and negligible extinction coefficient across a broad spectrum, can be easily deposited over large areas with good quality using straightforward physical vapor deposition, and patterned into high-aspect-ratio subwavelength nanostructures through commonly-available fluorine-gas-based reactive ion etching. We implement a series of high-efficiency ultraviolet and visible metasurfaces with representative light-field modulation functionalities including polarization-independent high-numerical-aperture lensing, spin-selective hologram projection, and vivid structural color generation, and the devices exhibit operational efficiencies up to 80%. Our work overcomes limitations faced by scalability of commonly-employed metasurface dielectrics and their operation into the visible and ultraviolet spectral range, and provides a novel route towards realization of high-performance, robust and foundry-manufacturable metasurface optics.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Optically pumped deep-UV multimode lasing in AlGaN double heterostructure grown by molecular beam homoepitaxy

Multimode lasing at sub-300 nm wavelengths is demonstrated by optical pumping in AlGaN heterostructures grown on single-crystal AlN substrates by plasma-assisted molecular beam epitaxy. Edge-emitting ridge-based Fabry–Pérot cavities are fabricated with the epitaxial AlN/AlGaN double heterostructure by a combined inductively coupled plasma reactive ion etch and tetramethylammonium hydroxide etch. The emitters exhibit peak gain at 284 nm and modal linewidths on the order of 0.1 nm at room temperature. The applied growth technique and its chemical and heterostructural design characteristics offer certain unique capabilities toward further development of electrically injected AlGaN laser diodes.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Nanoscale control of LaAlO 3 /SrTiO 3 conductance beyond the polar catastrophe

Conductive atomic force microscope (c-AFM) lithography can be utilized to create a wide range of LaAlO 3 /SrTiO 3 (LAO/STO)-based nanoelectronic devices in a reconfigurable manner. Experiments were generally performed with intrinsically insulating LAO/STO heterostructures, with LAO thickness less than the critical value at which a polar catastrophe takes place [<4 unit cell (u.c.)]. Here, we use inductively coupled plasma reactive ion etching (ICPRIE) to fabricate c-AFM “canvases” on intrinsically conducting LAO/STO samples with ≥4 u.c. LAO. We observe that its interfacial two-dimensional electron gas (2DEG) can be pinched off and then switched back on by c-AFM lithography. Nanowires created with initially conductive LAO/STO interfaces have an order-of-magnitude longer lifetime in ambient conditions, when compared to an identically created 3.4 u.c. LAO/STO nanowire. We also demonstrate key nanoscale properties such as ballistic transport in a quasi-one-dimensional electron waveguide at a 5 u.c. LAO/STO interface. This approach frees c-AFM-written nanodevice designs from time constraints in air associated with <4 u.c. LAO/STO heterostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Modulating surface acoustic wave generation through superconductivity

Surface acoustic waves (SAWs), with their five orders-of-magnitude slower propagation velocity, allow for considerably shorter wavelengths at the same frequency compared to electromagnetic waves. The short wavelengths allow for device miniaturization and on-chip integration. The generic design of these devices involves piezoelectric substrates with comb-like arrays of Al or Au electrodes known as interdigitated transducers (IDTs) deposited on the surface. However, Al and Au both have shortcomings at the cryogenic temperatures required for quantum applications, namely, the formation of two-level systems and the lack of superconductivity perpetuating Ohmic losses, respectively. In this work, SAWs are generated in the high-MHz to low-GHz range using niobium nitride (NbN) interdigitated transducers and Bragg reflectors. We demonstrate the fabrication of acoustic devices through photolithography and reactive ion etching. The sharp transition between superconducting and normal states and the corresponding change in SAW transmission allows for fine control of the “on” (superconducting) and “off” (normal) states of NbN, with a ΔT = 1 K separating the transmission minimum and maximum. We demonstrate a 16× difference in transmission between the “on” and “off” states of the device. The SAW transmission behavior mirrors the change in resistance of NbN at its T c . These findings open up new possibilities for the integration of NbN SAW resonators into existing quantum architectures based on NbN and a method for adjusting transmission properties independent of applied voltage.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Understanding and Mitigating the Contamination of Intrinsic poly-Si Gaps in Passivated IBC Solar Cells

We investigate factors that are critical for the performance of interdigitated back contact (IBC) solar cells based on polycrystalline silicon (poly-Si) passivated contacts. During patterning of doped lines using direct plasma deposition through a shadow mask, we show that the intrinsic poly-Si gap becomes contaminated with dopants, leading to shunting. Possible contamination mechanisms during masked deposition and high- temperature annealing are tested. Strategies developed to mitigate the contamination, such as reactive ion etching after deposition and amorphous to poly-Si crystallization in oxygen, will lead to improved IBC fabrication methods.

14 SOLAR ENERGY↗
DOE OSTI2021

Submicron Thickness Characterization of Poly-Si Thin Films on Textured Surfaces by X-Ray Diffraction for Minimizing Parasitic Absorption in Poly-Si/SiO2 Passivating Contact Cells

Poly-Si/SiO2 passivating contacts have shown great potential for industry-relevant next-generation solar cells. Previous work has demonstrated an improved Jsc from dry reactive ion etching in an SF6 environment, using front metal grids as a self-aligned mask. Here, we show an effective method to measure the front poly-Si thickness on an alkaline textured surface using X-ray diffraction. The calculated thicknesses are compared with cross-section SEM analysis and Quokka simulation. We show that by thinning the front poly-Si from 200 nm to 60 nm, Jsc increases by 2.4 mA/cm2, leading to an absolute efficiency gain of 1.73%. Finally, we discuss possible reasons for the premature loss of passivation before the removal of all poly-Si.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2021

Nanofabrication of silicon surfaces for reduced virus adhesion

Nanofabrication is a remarkably effective technique to create desirable nanoscale patterns. Here, the effect of surface nanofabrication on altering virus adhesion to the substrates was examined. Arrays of nanoholes, 50 nm in diameter, 22 nm deep, and 100 nm in pitch distance, were created on silicon (Si) wafers by electron-beam lithography and reactive ion etching. MS2 coliphage, which is 26 ± 2 nm in diameter and is frequently used as a surrogate for human viruses, was applied to investigate the interaction between the virions and smooth or nanostructured Si surfaces. Scanning electron microscopy and atomic force microscopy along with surface wettability analyses revealed that the nanofabrication had the effect of reducing not only the number of viruses attached but also the strength of virus adhesion. These effects were ascribed to the presence of nanoholes, which were inaccessible to the virions due to the unique surface topographical parameters and the surface chemistry, resulting in the decrease of the overall solid contact area for MS2 attachment. The periodic spacing of the nanoholes also limited the unit landing area for MS2 particles, restricting the formation of MS2 aggregates and leading to the reduced amount of MS2 attachment. We anticipate that smart design of a surface’s chemical composition and nanostructure will offer a feasible solution to improve mitigations for controlling viral adhesion and transmission to and from food contact surfaces.

36 MATERIALS SCIENCE↗