Search NASA⌕ Search

SEARCH · Search NASA

Results for “recombination layers”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1972

Ionospheric scale height from the refraction of satellite signals.

Accurate observations of the elevation angle of arrival of 20 MHz signals from the polar orbiting satellite Beacon-B for a 20 month period have provided transmission ionograms which may be reduced to give Hp the scale height at the peak of the ionosphere. Noon seasonal averages of Hp are 1.35 (in winter) to 1.55 (in summer) times greater than the scale height obtained from bottom-side ionograms. A comparison of scale height at the peak with routine measurements of total content and peak electron density indicates that the O+/H+ transition level is above 1000 km during the day but comes down to about 630 km on winter nights. A predawn peak in the overall scale height is caused by a lowering of the layer to a region of increased recombination and is magnified in winter by low O+/H+ transition levels.

Heron, M. L.↗
NASA NTRS1980

Interactions of efficiency and material requirements for terrestrial silicon solar cells

The transport velocity transformation method was used to analyze solar cell designs to determine optimum cell structures. It was found that low resistivity materials should be used up to the onset of Auger recombination; a properly designed three-layer structure permits base region approaching an ideal device in performance; and that higher resistivity front regions will need more sophisticated grid metallization structures than those used now. It was concluded that new features will provide idealized silicon cell structures yielding airmass 1 efficiencies in the 24-26.5% range, with real efficiencies near 22%.

Bowler, D. L.↗
NASA NTRS1994

Surface Passivation for 3-5 Semiconductor Processing: Stable Gallium Sulphide Films by MOCVD

Gallium sulphide (GaS) has been deposited on GaAs to form stable, insulating, passivating layers. Spectrally resolved photoluminescence and surface recombination velocity measurements indicate that the GaS itself can contribute a significant fraction of the photoluminescence in GaS/GaAs structures. Determination of surface recombination velocity by photoluminescence is therefore difficult. By using C-V analysis of metal-insulator-semiconductor structures, passivation of the GaAs with GaS films is quantified.

Macinnes, Andrew N.↗
NASA NTRS1982

Photoelectrochemical response of some layered chalcogenophosphate compounds /MPX3/

New photoelectrochemical results for the layered chalcogenophosphate compounds MPX3, FePS3, NiPS3, and SnPS3 are presented. The compounds were grown by iodine vapor transport in quartz ampules from a stoichiometric amount of the elements. Crystals of the layered type up to 10 mm x 10 mm x 0.1 mm were grown. The results of the layered compounds from the MPX3 series show good stability in acid solutions under photoelectrolysis condition. The relatively slow increase in the photocurrent with increasing electrode potential suggests high recombination rates for the photogenerated carriers in these layered materials. It is noted that improvements may be possible by, for example, optimizing the preparation of the crystals and the electrode surfaces.

Byvik, C. E.↗
NASA NTRS1987

Molecular processes in a high temperature shock layer

Research was completed on several aspects of dissociative recombination (DR) for the molecules NO(+), N2(+), and O2(+). For O2(+), DR with an electron is described by, O2(+) + e(-) yields O + O. Model studies were completed of the windows arising in DR cross section from excited ion vibrational levels and of the variation of the DR cross section with the intersection point of the ion and neutral dissociative state potential curves.

Guberman, Steven L.↗
NASA NTRS1985

Ram vehicle glow spectrum - Implication of NO2 recombination continuum

An experiment was operated on several Space Shuttle missions to provide spatial and spectral distributions of a ram glow associated with the Orbiter. The most recent data featured resolved spectrum and imagery of the glow with spectroscopic resolution of 34 A FWHM between 4000 and 8000 A. The spectrum of the glow on the Shuttle tail pod could be clearly separated from spectrum of the reflected light from the Orbiter. Analysis and comparison have been performed which strongly suggest the emission originates from recombination continuum of NO2. Both fast recombination (high temperature) and the spectral dependence in lifetime can describe the spectral difference. If the recombined NO2 retains 25 percent of the kinetic energy of the ram OI, the thickness of the glow layer can be explained by the lifetime of NO2 (2B1) recombination emission.

Swenson, G. R.↗
NASA NTRS1987

A Surface-Controlled Solar Cell

Open-circuit voltage and cell efficiency increased. Proposed technique for controlling recombination velocity on solar-cell surfaces provides cells of increased efficiency and open-circuit voltage. In present cells, uncontrolled surface recombination velocity degrades opencircuit voltage and efficiency. In cell using proposed technique, transparent conducting layer, insulated from cell contacts, biased to enable variable control of surface recombination velocity.

Daud, T.↗
NASA NTRS1985

Recombination phenomena in high efficiency silicon solar cells

The dominant recombination phenomena which limit the highest efficiency attainable in silicon solar cells under terrestrial sunlight are reviewed. The ultimate achievable efficiency is limited by the two intrinsic recombination mechanisms, the interband Auger recombination and interband Radiative recombination, both of which occur in the entire cell body but principally in the base layer. It is suggested that an optimum (26%) cell design is one with lowly doped 50 to 100 micron thick base, a perfect BSF, and zero extrinsic recombination such as the thermal mechanism at recombination centers the Shockley-Read-Hall process (SRH) in the bulk, on the surface and at the interfaces. The importance of recombination at the interfaces of a high-efficiency cell is demonstrated by the ohmic contact on the back surface whose interface recombination velocity is infinite. The importance of surface and interface recombination is demonstrated by representing the auger and radiative recombination losses by effective recombination velocities. It is demonstrated that the three highest efficiency cells may all be limited by the SRH recombination losses at recombination centers in the base layer.

Sah, C. T.↗
NASA NTRS1985

Processing technology for high efficiency silicon solar cells

Recent advances in silicon solar cell processing have led to attainment of conversion efficiency approaching 20%. The basic cell design is investigated and features of greatest importance to achievement of 20% efficiency are indicated. Experiments to separately optimize high efficiency design features in test structures are discussed. The integration of these features in a high efficiency cell is examined. Ion implantation has been used to achieve optimal concentrations of emitter dopant and junction depth. The optimization reflects the trade-off between high sheet conductivity, necessary for high fill factor, and heavy doping effects, which must be minimized for high open circuit voltage. A second important aspect of the design experiments is the development of a passivation process to minimize front surface recombination velocity. The manner in which a thin SiO2 layer may be used for this purpose is indicated without increasing reflection losses, if the antireflection coating is properly designed. Details are presented of processing intended to reduce recombination at the contact/Si interface. Data on cell performance (including CZ and ribbon) and analysis of loss mechanisms are also presented.

Spitzer, M. B.↗
NASA NTRS1987

Nitrogen recombination on high-temperature reusable surface insulation and the analysis of its effect on surface catalysis

The energy transfer catalytic recombination coefficients for nitrogen and oxygen on a borosilicate glass are determined in nitrogen and air hypersonic arc jet streams. These data, obtained from a reacting boundary-layer analysis with first-order surface reaction kinetics, compare well with earlier results from a Goulard frozen boundary-layer model up to 1600 K. The apparent surface recombination rates increase up to 1600 K, then begin to decrease. To illustrate the effects of temperature and nitrogen dissociation on energy transfer to the glass, a diffusional heat-flux is calculated using the present results from 1450 K up to 1850 K. This diffusional heat-flux is the contribution to the total heating rate by atom recombination, and is used to compare the present results with coefficients from three previous studies.

Kolodziej, Paul↗
NASA NTRS1995

ZnSe Window Layers for GaAs and GaInP2 Solar Cells

This report concerns studies of the use of ZnSe as a window layer for GaAs solar cells. Well-oriented crystalline ZnSe films on (100) single crystal GaAs substrates were grown by MOCVD. In particular, ZnSe films were grown by reacting a zinc adduct with hydrogen selenide at temperatures in the range of 200 C to 400 C. X-ray diffraction studies and images obtained with an atomic force microscope determined that the films were highly oriented but were polycrystalline. Particular emphasis was placed on the use of a substrate temperature of 350 C. Using iodine as a dopant, n-type ZnSe films with resistivities in the range of .01 to .05 ohm-cm were grown on semi-insulating GaAs. Thus procedures have been developed for investigating the utility of n-type ZnSe window layers on n/p GaAs structures. Studies of recombination at n-ZnSe/n-GaAs interfaces in n-ZnSe/n-GaAs/p-GaAs cell structures are planned for future work.

Olsen, Larry C.↗
NASA NTRS1993

Transition on a sharp cone at high enthalpy - New measurements in the shock tunnel T5 at GALCIT

An exploratory study of the laminar, transitional and turbulent boundary layer on a slender cone in hypervelocity flow was conducted in the high-enthalpy shock tunnel T5. A novel flow visualization technique using sodium seeding to increase the sensitivity of conventional interferometric techniques by resonant enhancement of the refractivity of the medium was developed to study its structure. The experiments were designed to cover a large range of specific reservoir enthalpy, ranging from the perfect-gas region to the range where significant oxygen and some nitrogen dissociation and recombination effects may be expected in the boundary layer. Surface heat flux measurements indicate that the transition Reynolds number is approximately the same as that observed in cold hypersonic flow in conventional continuous flow facilities, but significantly lower than that observed in 'quiet' tunnels. No significant effect of reservoir specific enthalpy on transition was observed. The heat flux distribution showed differences between the air and the nitrogen experiments in the laminar regime. These are consistent with the presence of recombination of oxygen at the wall. This view is supported by the fact that this effect is absent in the low-enthalpy region, where the heat flux distribution agrees with the similarity theory.

Germain, P.↗
NASA NTRS1991

Effect of InAlAs window layer on the efficiency of indium phosphide solar cells

Indium phosphide (InP) solar cell efficiencies are limited by surface recombination. The effect of a wide-bandgap lattice-matched indium aluminum arsenide (In0.52Al0.48As) window layer on the performance of InP solar cells was investigated using a numerical code PC-1D. The p(+)n InP solar cell performance improves significantly with the use of a window layer. No improvement is seen for n(+)p InP cells. Cell results are explained by the band diagram of the heterostructure and the conduction-band energy discontinuity. The calculated I-V and internal quantum efficiency results clearly demonstrate that In0.52Al0.48As is a promising candidate as a window layer material for p(+)n InP solar cells.

Jain, R. K.↗
NASA NTRS1986

The effect of vertical drift on the equatorial F-region stability

Time-dependent ionospheric model calculations for day-time and night-time solutions are presented. The behavior of the growth rate and ion-electron recombination rate for the Rayleigh-Taylor instability on the F-region bottomside is examined as a function of the vertical eastward electric field-magnetic field strength drift velocity. It is observed that on the bottomside F-layer the growth rate exceeds the ion-electron recombination rate even without vertical drift; however, an eastward electric field-magnetic field strength drift can produce an increase in the growth rate by an order of magnitude. The calculated data are compared with previous research and good correlation is detected. The formation of bubbles from a seeding mechanism is investigated.

Hanson, W. B.↗
NASA NTRS1992

Effect of InAlAs window layer on efficiency of indium phosphide solar cells

Indium phosphide (InP) solar cell efficiencies are limited by surface recombination. The effect of a wide bandgap, lattice-matched indium aluminum arsenide (In(0.52)Al(0.48)As) window layer on the performance of InP solar cells was investigated by using the numerical code PC-1D. The p(+)n InP solar cell performance improved significantly with the use of the window layer. No improvement was seen for the n(+)p InP cells. The cell results were explained by the band diagram of the heterostructure and the conduction band energy discontinuity. The calculated current voltage and internal quantum efficiency results clearly demonstrated that In(0.52)Al(0.48)As is a very promising candidate for a window layer material for p(+)n InP solar cells.

Jain, Raj K.↗
NASA NTRS1993

Lattice-mismatched In(0.40)Al(0.60)As window layers for indium phosphide solar cells

The efficiency of indium phosphide (InP) solar cells is limited by its high surface recombination velocity (approximately 10(exp 7) cm/s). This might be reduced by a wide-bandgap window layer. The performance of InP solar cells with wide-bandgap (1.8 eV) lattice-mismatched In(0.40)Al(0.60)As as a window layer was calculated. Because the required window layer thickness is less than the critical layer thickness, growth of strained (pseudomorphic) layers without interfacial misfit dislocations should be possible. Calculations using the PC-lD numerical code showed that the efficiencies of baseline and optimized p(+)n (p-on-n) cells are increased to more than 22 and 24 percent, (air mass zero (AMO), 25 C), respectively for a lattice-mismatched In(0.40)Al(0.60)As window layer of 10-nm thickness. Currently, most cell development work has been focused on n(+)p (n-on-p) structures although comparatively little improvement has been found for n(+)p cells.

Jain, Raj K.↗
NASA NTRS1987

Improving Solar Cells With Polycrystalline Silicon

In proposed solar-cell design, layers of polycrystalline silicon grown near front metal grid and back metal surface. Net electrical effect increases open-circuit voltage and short-circuit current, resulting in greater cell power output and energy conversion efficiency. Solar-cell configuration differs from existing one in that layers of doped polycrystalline silicon added to reduce recombination in emitter and back surface field regions.

Rohatgi, Ajeet↗