The effects of space radiation on MOSFET DEVICES and some application implications of those effects.
Space radiation effect on MOSFET and metal- silicon nitride-silicon devices, noting protective methods
METAL OXIDE SEMICONDUCTOR /MOS/↗
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Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches
The effects of neutron and gamma rays on the electrical and switching characteristics of power semiconductor switches must be known and understood by the designer of the power conditioning, control, and transmission subsystem of space nuclear power systems. The SP-100 radiation requirements at 25 m from the nuclear source are a neutron fluence of 10(exp 13) n/sq cm and a gamma dose of 0.5 Mrads. Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN Bipolar Junction Transistors (BJTs), Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), and Static Induction Transistors (SITs) are presented. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Post-irradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed.
Schwarze, G. E.↗
Compact Solid-State High-Voltage Switch
Researchers at Sandia have developed a semiconductor-based high-voltage switch, with experimental results showing potential for enhanced radiation hardness, for use in multiple power conversion applications. Gallium nitride (GaN) metal-oxide semiconductor field effect transistors (MOSFETs) were modeled using commercial and Sandia CHARON simulation software to understand their performance and for future prediction of device operation in radiation environments.
42 ENGINEERING↗
Radiation Hardness Assurance for Space Systems
The space radiation environment can lead to extremely harsh operating conditions for on-board electronic box and systems. The characteristics of the radiation environment are highly dependent on the type of mission (date, duration and orbit). Radiation accelerates the aging of the electronic parts and material and can lead to a degradation of electrical performance; it can also create transient phenomena on parts. Such damage at the part level can induce damage or functional failure at electronic box, subsystem, and system levels. A rigorous methodology is needed to ensure that the radiation environment does not compromise the functionality and performance of the electronics during the system life. This methodology is called hardness assurance. It consists of those activities undertaken to ensure that the electronic piece parts placed in the space system perform to their design specifications after exposure to the space environment. It deals with system requirements, environmental definitions, part selection, part testing, shielding and radiation tolerant design. All these elements should play together in order to produce a system tolerant to.the radiation environment. An overview of the different steps of a space system hardness assurance program is given in section 2. In order to define the mission radiation specifications and compare these requirements to radiation test data, a detailed knowledge of the space environment and the corresponding electronic device failure mechanisms is required. The presentation by J. Mazur deals with the Earth space radiation environment as well as the internal environment of a spacecraft. The presentation by J. Schwank deals with ionization effects, and the presentation by T. Weatherford deals with Single particle Event Phenomena (SEP) in semiconductor devices and microcircuits. These three presentations provide more detailed background to complement the sections 3 and 4. Part selection and categorization are discussed in section 5. Section 6 presents the organization of the hardness assurance within a project. Section 7 discusses emerging radiation hardness assurance issues.
Poivey, Christian↗
Single-Event Gate Rupture in Power MOSFETs: A New Radiation Hardness Assurance Approach
Almost every space mission uses vertical power metal-semiconductor-oxide field-effect transistors (MOSFETs) in its power-supply circuitry. These devices can fail catastrophically due to single-event gate rupture (SEGR) when exposed to energetic heavy ions. To reduce SEGR failure risk, the off-state operating voltages of the devices are derated based upon radiation tests at heavy-ion accelerator facilities. Testing is very expensive. Even so, data from these tests provide only a limited guide to on-orbit performance. In this work, a device simulation-based method is developed to measure the response to strikes from heavy ions unavailable at accelerator facilities but posing potential risk on orbit. This work is the first to show that the present derating factor, which was established from non-radiation reliability concerns, is appropriate to reduce on-orbit SEGR failure risk when applied to data acquired from ions with appropriate penetration range. A second important outcome of this study is the demonstration of the capability and usefulness of this simulation technique for augmenting SEGR data from accelerator beam facilities. The mechanisms of SEGR are two-fold: the gate oxide is weakened by the passage of the ion through it, and the charge ionized along the ion track in the silicon transiently increases the oxide electric field. Most hardness assurance methodologies consider the latter mechanism only. This work demonstrates through experiment and simulation that the gate oxide response should not be neglected. In addition, the premise that the temporary weakening of the oxide due to the ion interaction with it, as opposed to due to the transient oxide field generated from within the silicon, is validated. Based upon these findings, a new approach to radiation hardness assurance for SEGR in power MOSFETs is defined to reduce SEGR risk in space flight projects. Finally, the potential impact of accumulated dose over the course of a space mission on SEGR susceptibility is explored. SEGR evaluation of gamma-irradiated power MOSFETs suggests a non-significant SEGR susceptibility enhancement due to accumulated dose from gamma rays. During SEGR testing, an unexpected enhanced dose effect from heavy-ion irradiation was detected. We demonstrate that this effect could be due to direct ionization by two or more ions at the same channel location. The probability on-orbit for such an occurrence is near-zero given the low heavy-ion fluence over a typical mission lifetime, and did not affect SEGR susceptibility. The results of this work can be used to bound the risk of SEGR in power MOSFETs considered for insertion into spacecraft and instruments.
Lauenstein, Jean-Marie↗
Strategies for Radiation Hardness Testing of Power Semiconductor Devices
Plans on the drawing board for future space missions call for much larger power systems than have been flown in the past. These systems would employ much higher voltages and currents to enable more powerful electric propulsion engines and other improvements on what will also be much larger spacecraft. Long term human outposts on the moon and planets would also require high voltage, high current and long life power sources. Only hundreds of watts are produced and controlled on a typical robotic exploration spacecraft today. Megawatt systems are required for tomorrow. Semiconductor devices used to control and convert electrical energy in large space power systems will be exposed to electromagnetic and particle radiation of many types, depending on the trajectory and duration of the mission and on the power source. It is necessary to understand the often very different effects of the radiations on the control and conversion systems. Power semiconductor test strategies that we have developed and employed will be presented, along with selected results. The early results that we have obtained in testing large power semiconductor devices give a good indication of the degradation in electrical performance that can be expected in response to a given dose. We are also able to highlight differences in radiation hardness that may be device or material specific.
Soltis, James V.↗
Measured Energy-Dependent Neutron Attenuation Through the Stacked Printed Circuit Boards
Engineers often stack printed circuit boards (PCBs), populated with semiconductor devices, one behind the other in neutron beams to improve the error statistics in radiation-effects tests. As the neutron beam traverses through the boards, the neutron flux is both attenuated and the energy spectrum changes, which may have a significant impact on the results of such tests. In this work, we have developed a technique to measure the energy-dependent neutron attenuation due to the PCBs and to determine the energy-dependent effective cross section of neutron interactions with a single PCB. With this effective cross section, engineers can calculate the change in the neutron energy spectrum and the total neutron attenuation after any number of identical PCBs in the stack. This information will allow test engineers to partially correct inaccuracies in soft error tests.
42 ENGINEERING↗
Reliability and Qualification of III/V Semiconductor Devices for Space Applications
This paper provides a description of the reliability and qualification issues related to the application of III/V semiconductor devices in critical space systems.
semicondoctors space applications radiation effect↗
Test Standard Revision Update: JESD57, "Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy-Ion Irradiation"
The JEDEC JESD57 test standard, Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy-Ion Irradiation, is undergoing its first revision since 1996. In this talk, we place this test standard into context with other relevant radiation test standards to show its importance for single-event effect radiation testing for space applications. We show the range of industry, government, and end-user party involvement in the revision. Finally, we highlight some of the key changes being made and discuss the trade-space in which setting standards must be made to be both useful and broadly adopted.
heavy ion↗
PROTON RADIATION DAMAGE IN SEMICONDUCTOR DEVICES
Proton radiation damage in semiconducting transistor devices - radiation hazard
RADIATION EFFECT↗
Electronics for Extreme Environments
Most of the NASA missions involve extreme environments comprising radiation and low or high temperatures. Current practice of providing friendly ambient operating environment to electronics costs considerable power and mass (for shielding). Immediate missions such as the Europa orbiter and lander and Mars landers require the electronics to perform reliably in extreme conditions during the most critical part of the mission. Some other missions planned in the future also involve substantial surface activity in terms of measurements, sample collection, penetration through ice and crust and the analysis of samples. Thus it is extremely critical to develop electronics that could reliably operate under extreme space environments. Silicon On Insulator (SOI) technology is an extremely attractive candidate for NASA's future low power and high speed electronic systems because it offers increased transconductance, decreased sub-threshold slope, reduced short channel effects, elimination of kink effect, enhanced low field mobility, and immunity from radiation induced latch-up. A common belief that semiconductor devices function better at low temperatures is generally true for bulk devices but it does not hold true for deep sub-micron SOI CMOS devices with microscopic device features of 0.25 micrometers and smaller. Various temperature sensitive device parameters and device characteristics have recently been reported in the literature. Behavior of state of the art technology devices under such conditions needs to be evaluated in order to determine possible modifications in the device design for better performance and survivability under extreme environments. Here, we present a unique approach of developing electronics for extreme environments to benefit future NASA missions as described above. This will also benefit other long transit/life time missions such as the solar sail and planetary outposts in which electronics is out open in the unshielded space at the ambient space temperatures and always exposed to radiation. Additional information is contained in the original extended abstract.
Patel, J. U.↗
Correlation of displacement effects produced by electrons, protons and neutrons in silicon
The correlation of displacement effects produced by electrons, protons, and neutrons in silicon is studied. Available data from the literature is employed. In particular the scope of the study is limited to the degradation of excess carrier lifetime and device electrical parameters directly related to it. The degree to which displacement effects may be correlated in order to predict semiconductor device response based on response data to another type of radiation is discussed. Useful ranges of the correlation factors (lifetime damage constant ratios) as a function of device majority carrier type, device resistivity, and injection level are presented. A significant dependence on injection level for the correlation factors is found.
Van Lint, V. A. J.↗
Radiation-Hardness Data For Semiconductor Devices
Document presents data on and analysis of radiation hardness of various semiconductor devices. Data specifies total-dose radiation tolerance of devices. Volume 1 of report covers diodes, bipolar transistors, field effect transistors, silicon controlled rectifiers and optical devices. Volume 2 covers integrated circuits. Volume 3 provides detailed analysis of data in volumes 1 and 2.
Price, W. E.↗
Comparison of a Probabilistic TID Hardness Assurance Method to Military Standards
The rapid evolution of electronics has heralded countless benefits to humanity, enabling increases in computing power while decreasing costs. However, the constantly changing semiconductor device landscape proves to be an immense challenge for the reliability community, especially for those concerned with radiation effects on microelectronics. Changes in device manufacturing, from device structure to processing steps, may and often do change the way the device responds to radiation. While radiation hardened parts are not as much of a reliability concern, they also lag behind commercial off-the-shelf, or COTS, parts in terms of computing capabilities, some by over a decade. Many missions may have no choice but to utilize COTS. As such, these missions need to ensure their parts are reliable in the face of total ionizing dose (TID). However, part and testing facility costs limit the amount of testing possible.
Chloe Champagne↗
Research on radiation detectors, boiling transients, and organic lubricants
The accomplishments of a space projects research facility are presented. The subjects discussed are: (1) a study of radiation resistant semiconductor devices, (2) synthesis of high temperature organic lubricants, (3) departure from phase equilibrium during boiling transients, (4) effects of neutron irradiation on defect state in tungsten, and (5) determination of photon response function of NE-213 liquid scintillation detectors.
Source record↗
Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches
Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN bipolar junction transistors (BJTs), metal-oxide-semiconductor field effect transistors (MOSFETs), and static induction transistors (SITs) are given. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Postirradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed.
Schwarze, G. E.↗
Proton Nonionizing Energy Loss (NIEL) for Device Applications
Nonionizing energy loss (NIEL) is a quantity that describes the rate of energy loss due to atomic displacements as a particle traverses a material. The product of the NIEL and the particle fluence (time integrated flux) gives the displacement damage energy deposition per unit mass of material. NIEL plays the same role to the displacement damage energy deposition as the stopping power to the total ionizing dose (TID). The concept of NIEL has been very useful for correlating particle induced displacement damage effects in semiconductor and optical devices. Many studies have successfully demonstrated that the degradation of semiconductor devices or optical sensors in a radiation field can be linearly correlated to the displacement damage energy, and subsequently to the NIEL deposited in the semiconductor devices or optical sensors. In addition, the NIEL concept was also useful in the study of both Si and GaAs solar cells and of high temperature superconductors, and at predicting the survivability of detectors used at the LHC at CERN. On the other hand, there are some instances where discrepancies are observed in the application of NIEL, most notably in GaAs semiconductor devices. However, NIEL is still a valuable tool, and can be used to scale damages produced by different particles and in different environments, even though this is not understood at the microscopic level.
Jun, Insoo↗
Radiation effects in spacecraft electronics
Effects on the internal spacecraft electronics due to exposure to the natural and enhanced space radiation environment will be reviewed. The emphasis will be placed on the description of the nature of both the exposure environment and failure mechanisms in semiconductors. Understanding both the system environment and device effects is critical in the use of laboratory simulation environments to obtain the data necessary to design and qualify components for successful application.
Raymond, James P.↗