PROTON RADIATION DAMAGE IN SEMICONDUCTOR DEVICES
Proton radiation damage in semiconducting transistor devices - radiation hazard
RADIATION EFFECT↗
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Electronics for Extreme Environments
Most of the NASA missions involve extreme environments comprising radiation and low or high temperatures. Current practice of providing friendly ambient operating environment to electronics costs considerable power and mass (for shielding). Immediate missions such as the Europa orbiter and lander and Mars landers require the electronics to perform reliably in extreme conditions during the most critical part of the mission. Some other missions planned in the future also involve substantial surface activity in terms of measurements, sample collection, penetration through ice and crust and the analysis of samples. Thus it is extremely critical to develop electronics that could reliably operate under extreme space environments. Silicon On Insulator (SOI) technology is an extremely attractive candidate for NASA's future low power and high speed electronic systems because it offers increased transconductance, decreased sub-threshold slope, reduced short channel effects, elimination of kink effect, enhanced low field mobility, and immunity from radiation induced latch-up. A common belief that semiconductor devices function better at low temperatures is generally true for bulk devices but it does not hold true for deep sub-micron SOI CMOS devices with microscopic device features of 0.25 micrometers and smaller. Various temperature sensitive device parameters and device characteristics have recently been reported in the literature. Behavior of state of the art technology devices under such conditions needs to be evaluated in order to determine possible modifications in the device design for better performance and survivability under extreme environments. Here, we present a unique approach of developing electronics for extreme environments to benefit future NASA missions as described above. This will also benefit other long transit/life time missions such as the solar sail and planetary outposts in which electronics is out open in the unshielded space at the ambient space temperatures and always exposed to radiation. Additional information is contained in the original extended abstract.
Patel, J. U.↗
Correlation of displacement effects produced by electrons, protons and neutrons in silicon
The correlation of displacement effects produced by electrons, protons, and neutrons in silicon is studied. Available data from the literature is employed. In particular the scope of the study is limited to the degradation of excess carrier lifetime and device electrical parameters directly related to it. The degree to which displacement effects may be correlated in order to predict semiconductor device response based on response data to another type of radiation is discussed. Useful ranges of the correlation factors (lifetime damage constant ratios) as a function of device majority carrier type, device resistivity, and injection level are presented. A significant dependence on injection level for the correlation factors is found.
Van Lint, V. A. J.↗
Radiation-Hardness Data For Semiconductor Devices
Document presents data on and analysis of radiation hardness of various semiconductor devices. Data specifies total-dose radiation tolerance of devices. Volume 1 of report covers diodes, bipolar transistors, field effect transistors, silicon controlled rectifiers and optical devices. Volume 2 covers integrated circuits. Volume 3 provides detailed analysis of data in volumes 1 and 2.
Price, W. E.↗
Comparison of a Probabilistic TID Hardness Assurance Method to Military Standards
The rapid evolution of electronics has heralded countless benefits to humanity, enabling increases in computing power while decreasing costs. However, the constantly changing semiconductor device landscape proves to be an immense challenge for the reliability community, especially for those concerned with radiation effects on microelectronics. Changes in device manufacturing, from device structure to processing steps, may and often do change the way the device responds to radiation. While radiation hardened parts are not as much of a reliability concern, they also lag behind commercial off-the-shelf, or COTS, parts in terms of computing capabilities, some by over a decade. Many missions may have no choice but to utilize COTS. As such, these missions need to ensure their parts are reliable in the face of total ionizing dose (TID). However, part and testing facility costs limit the amount of testing possible.
Chloe Champagne↗
Research on radiation detectors, boiling transients, and organic lubricants
The accomplishments of a space projects research facility are presented. The subjects discussed are: (1) a study of radiation resistant semiconductor devices, (2) synthesis of high temperature organic lubricants, (3) departure from phase equilibrium during boiling transients, (4) effects of neutron irradiation on defect state in tungsten, and (5) determination of photon response function of NE-213 liquid scintillation detectors.
Source record↗
Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches
Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN bipolar junction transistors (BJTs), metal-oxide-semiconductor field effect transistors (MOSFETs), and static induction transistors (SITs) are given. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Postirradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed.
Schwarze, G. E.↗
Proton Nonionizing Energy Loss (NIEL) for Device Applications
Nonionizing energy loss (NIEL) is a quantity that describes the rate of energy loss due to atomic displacements as a particle traverses a material. The product of the NIEL and the particle fluence (time integrated flux) gives the displacement damage energy deposition per unit mass of material. NIEL plays the same role to the displacement damage energy deposition as the stopping power to the total ionizing dose (TID). The concept of NIEL has been very useful for correlating particle induced displacement damage effects in semiconductor and optical devices. Many studies have successfully demonstrated that the degradation of semiconductor devices or optical sensors in a radiation field can be linearly correlated to the displacement damage energy, and subsequently to the NIEL deposited in the semiconductor devices or optical sensors. In addition, the NIEL concept was also useful in the study of both Si and GaAs solar cells and of high temperature superconductors, and at predicting the survivability of detectors used at the LHC at CERN. On the other hand, there are some instances where discrepancies are observed in the application of NIEL, most notably in GaAs semiconductor devices. However, NIEL is still a valuable tool, and can be used to scale damages produced by different particles and in different environments, even though this is not understood at the microscopic level.
Jun, Insoo↗
Radiation effects in spacecraft electronics
Effects on the internal spacecraft electronics due to exposure to the natural and enhanced space radiation environment will be reviewed. The emphasis will be placed on the description of the nature of both the exposure environment and failure mechanisms in semiconductors. Understanding both the system environment and device effects is critical in the use of laboratory simulation environments to obtain the data necessary to design and qualify components for successful application.
Raymond, James P.↗
The Effects of Thermal Cycling on Gallium Nitride and Silicon Carbide Semiconductor Devices for Aerospace Use
Electronics designed for use in NASA space missions are required to work efficiently and reliably under harsh environment conditions. These Include radiation, extreme temperatures, thermal cycling, to name a few. Preliminary data obtained on new Gallium Nitride and Silicon Carbide power devices under exposure to radiation followed by long term thermal cycling are presented. This work was done in collaboration with GSFC and JPL in support of the NASA Electronic Parts and Packaging (NEPP) Program
Patterson, Richard L.↗
Taking SiC Power Devices to the Final Frontier: Addressing Challenges of the Space Radiation Environment
Silicon carbide power device technology has the potential to enable a new generation of aerospace power systems that demand high efficiency, rapid switching, and reduced mass and volume in order to expand space-based capabilities. For this potential to be realized, SiC devices must be capable of withstanding the harsh space radiation environment. Commercial SiC components exhibit high tolerance to total ionizing dose but to date, have not performed well under exposure to heavy ion radiation representative of the on-orbit galactic cosmic rays. Insertion of SiC power device technology into space applications to achieve breakthrough performance gains will require intentional development of components hardened to the effects of these highly-energetic heavy ions. This work presents heavy-ion test data obtained by the authors over the past several years for discrete SiC power MOSFETs, JFETs, and diodes in order to increase the body of knowledge and understanding that will facilitate hardening of this technology to space radiation effects. Specifically, heavy-ion irradiation data taken under different bias, temperature, and ion beam conditions is presented for devices from different manufacturers, and the emerging patterns discussed.
Power semiconductor devices↗
Effects of Radiation on Commercial Power Devices
The effects of radiation on various commercial power devices are presented. The devices have proved to be very fragile to single event effects, with some of the devices actually succumbing to catastrophic SEE with protons.
power semiconductor devices↗
Prediction and measurement results of radiation damage to CMOS devices on board spacecraft
Final results from the CMOS Radiation Effects Measurement (CREM) experiment flown on Explorer 55 are presented and discussed, based on about 15 months of observations and measurements. Conclusions are given relating to long-range annealing, effects of operating temperature on semiconductor performance in space, biased and unbiased P-MOS device degradation, unbiased n-channel device performance, changes in device transconductance, and the difference in ionization efficiency between Co-60 gamma rays and 1-Mev Van de Graaff electrons. The performance of devices in a heavily shielded electronic subsystem box within the spacecraft is evaluated and compared. Environment models and computational methods and their impact on device-degradation estimates are being reviewed to determine whether they permit cost-effective design of spacecraft.
Stassinopoulos, E. G.↗
Heavy Ion Induced Degradation in SiC Schottky Diodes: Bias and Energy Deposition Dependence
Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy deposition. This degradation is possibly related to thermal spot annealing at the metal semiconductor interface. This thermal annealing leads to an inhomogeneity of the Schottky barrier that could be responsible for the increase leakage current as a function of fluence.
modeling↗
CHARGED PARTICLE RADIATION DAMAGE IN SEMICONDUCTORS. II- MINORITY CARRIER DIFFUSION ANALYSIS IN PHOTOVOLTAIC DEVICES
Minority carrier diffusion analysis in solar cells
SEMICONDUCTOR↗
Total dose effects in the 54HC family of microcircuits
Motorola and National Semiconductor 54HC00 and 54HC74 microcircuits were evaluated using CO-60 to determine their total dose radiation hardness. The devices were found to be radiation soft failing parametrically between 5 and 10 K rads and functionally between 20 and 40 K rads. The failures were bias dependent, relatively insensitive to dose rate, and only annealed moderately when left unbiased at room temperature.
Ropiak, S.↗
Hardening electronic devices against very high total dose radiation environments
The possibilities and limitations of hardening silicon semiconductor devices to the high neutron and gamma radiation levels and greater than 10 to the eighth power rads required for the NERVA nuclear engine development are discussed. A comparison is made of the high dose neutron and gamma hardening potential of bipolar, metal insulator semiconductors and junction field effect transistors. Experimental data is presented on device degradation for the high neutron and gamma doses. Previous data and comparisons indicate that the JFET is much more immune to the combined neutron displacement and gamma ionizing effects than other transistor types. Experimental evidence is also presented which indicates that p channel MOS devices may be able to meet the requirements.
Buchanan, B.↗
Development of a theoretical model for annealing of radiation damage in semiconductor devices
The radiation response of Metal Oxide Semiconductor (MOS) devices and Integrated Circuits (ICs) was studied theoretically. The case of short-term annealing and the rebound effect are modeled mathematically using the linear response theory.
Litovchenko, V.↗