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At least 73 records · Page 4

Degradation of ESR in Polymer Tantalum Capacitors During High Temperature Storage

Replacement of MnO2 cathodes with conductive polymers in chip tantalum capacitors allows for a substantial reduction of the equivalent series resistance (ESR), improvement of frequency characteristics, and elimination of the possibility of ignition during failures. One of the drawbacks of chip polymer tantalum capacitors (CPTCs) is a relatively poor long-term stability at high temperatures. Due to degradation processes in conductive polymer materials, the existing quality assurance testing that has been developed for MnO2 capacitors is not sufficient to guarantee long-term stability of CPTCs. Insertion of CPTCs in hi-rel systems requires development of models that can predict degradation of the parts at operating conditions. In this work, variations of AC characteristics (capacitance, DF and ESR) in different types of capacitors from three manufacturers have been monitored during storage at temperatures from 100ºC to 175ºC for periods of up to 15,000 hours. Results show that the most sensitive to degradation parameter is ESR. Distributions of times to parametric failure during storage have been simulated using a Weibull-Arrhenius model that allowed for assessments of activation energies of degradation and prediction of times to failure at use temperatures. Mechanisms of degradation and the effect of packaging are discussed.

equivalent series resistance (ESR)↗

Degradation and ESR Failures in MnO2 Chip Tantalum Capacitors

Equivalent series resistance (ESR) of chip tantalum capacitors determines the rate of energy delivery and power dissipation thus affecting temperature and reliability of the parts. Employment of advanced capacitors with reduced ESR decreases power losses and improves efficiency in power systems. Stability of ESR is essential for correct operations of power units and might cause malfunctioning and failures when ESR becomes too high or too low. Several cases with ESR values in CWR29 capacitors exceeding the specified limit that were observed recently raised concerns regarding environmental factors affecting ESR and the adequacy of the existing screening and qualification testing. In this work, results of stress testing of various types of military and commercial capacitors obtained over years by GSFC test lab and NEPP projects that involved ESR measurements are described. Environmental stress tests include testing in humidity and vacuum chambers, temperature cycling, long-term storage at high temperatures, and various soldering simulation tests. Note that in many cases parts failed due to excessive leakage currents or reduced breakdown voltages. However, only ESR-related degradation and failures are discussed. Mechanisms of moisture effect are discussed and recommendations to improve screening and qualification system are suggested.

Equivalent Series Resistance (ESR)↗

Design, fabrication and characteristics of new types of back surface field cells

Several new types of back surface field (BSF) cells were designed and fabricated. These include boron and phosphorus diffused BSF cells, single crystal epitaxially grown BSF cells and chemically vapor deposited (CVD) polycrystalline BSF cells. Boron diffusion yielded 10 ohm-cm BSF cells with 0.6 volt open-circuit voltages and collection efficiencies equal to those previously reported for aluminum alloying. The epitaxially grown cells also exhibited high open-circuit voltages and collection efficiencies and may be more radiation damage resistant. The polycrystalline cells had very high internal series resistance. No direct relationship was found to exist between collection efficiency and open-circuit voltage, V sub oc in BSF cells. Results indicate that the V sub oc effect is not caused simply by the mechanism of blocking of minority carriers.

Mandelkorn, J.↗

Design, fabrication and characteristics of new types of back surface field cells

Several new types of back surface field (BSF) cells were designed and fabricated. These include boron and phosphorus diffused BSF cells, single crystal epitaxially grown BSF cells and chemically vapor deposited (CVD) polycrystalline BSF cells. Boron diffusion yielded 10 ohm-cm BSF cells with 0.6 volt open-circuit voltages and collection efficiencies equal to those previously reported for aluminum alloying. The epitaxially grown cells also exhibited high open-circuit voltages and collection efficiencies and may be more radiation damage resistant. The polycrystalline cells had very high internal series resistance. No direct relationship was found to exist between collection efficiency and open-circuit voltage in BSF cells.

Mandelkorn, J.↗

Development of thin wraparound junction silicon solar cells

The state of the art technologies was applied to fabricate 50 micro thick 2x4 cm, coplanar back contact (CBC) solar cells with AMO efficiency above 12%. A requirement was that the cells have low solar absorptance. A wraparound junction (WAJ) with wraparound metallization was chosen. This WAJ approach avoided the need for very complex fixturing, especially during rotation of the cells for providing adequate contacts over dielectric edge layers. The contact adhesion to silicon was considered better than to an insulator. It is indicated that shunt resistance caused by poor WAJ diode quality, and series resistance from the WAJ contact, give good cell performance. The cells developed reached 14 percent AMO efficiency (at 25 C), with solar absorptance values of 0.73. Space/cell environmental tests were performed on these cells and the thin CSC cells performed well. The optimized design configuration and process sequence were used to make 50 deliverable CBC cells. These cells were all above 12 percent efficiency and had an average efficiency of -13 percent. Results of environmental tests (humidity-temperature, thermal shock, and contact adherence) are also given.

Ho, F.↗

Radiation and temperature effects in gallium arsenide, indium phosphide and silicon solar cells

The effects of radiation on performance are determined for both n(+)p and p(+)n GaAs and InP cells and for silicon n(+)p cells. It is found that the radiation resistance of InP is greater than that of both GaAs and Si under 1 MeV electron irradiation. For silicon, the observed decreased radiation resistance with decreased resistivity is attributed to the presence of a radiation induced boron-oxygen defect. Comparison of radiation damage in both p(+)n and n(+)p GaAs cells yields a decreased radiation resistance for the n(+)p cell attributable to increased series resistance, decreased shunt resistance, and relatively greater losses in the cell's p-region. For InP, the n(+)p configuration is found to have greater radiation resistance than the p(+)n cell. The increased loss in this latter cell is attributed to losses in the cell's emitter region. Temperature dependency results are interpreted using a theoretical relation for dVoc/cT which predicts that increased Voc should results in decreased numerical values for dPm/dT. The predicted correlation is observed for GaAs but not for InP a result which is attributed to variations in cell processing.

Weinberg, I.↗

Radiation and temperature effects in gallium arsenide, indium phosphide, and silicon solar cells

The effects of radiation on performance are determined for both n+p and p+n GaAs and InP cells and for silicon n+p cells. It is found that the radiation resistance of InP is greater than that of both GaAs and Si under 1-MeV electron irradiation. For silicon, the observed decreased radiation resistance with decreased resistivity is attributed to the presence of a radiation-induced boron-oxygen defect. Comparison of radiation damage in both p+n and n+p GaAs cells yields a decreased radiation resistance for the n+p cell attributable to increased series resistance, decreased shunt resistance, and relatively greater losses in the cell's p-region. For InP, the n+p configuration is found to have greater radiation resistance than the p+n cell. The increased loss in this latter cell is attributed to losses in the cell's emitter region. Temperature dependency results are interpreted using a theoretical relation for dVoc/dT, which predicts that increased Voc should result in decreased numerical values for dPm/dT. The predicted correlation is observed for GaAs but not for InP, a result which is attributed to variations in cell processing.

Weinberg, I.↗

Reducing Internal Resistance in Activated Carbon Supercapacitors via Exfoliated Coal-Derived Graphene Additive

Low equivalent series resistance (ESR) is critical for high-rate energy storage devices (e.g., supercapacitors), and graphene is a promising additive for reducing ESR in carbon-based supercapacitor electrodes. However, graphene can be costly and difficult to produce at scale. This study investigates the addition of graphene, produced through electrochemical exfoliation of domestic coal-derived graphite, in activated carbon-based supercapacitors. The coal-derived graphene was incorporated at varying weight loadings and tested in symmetric supercapacitors with aqueous electrolytes. ESR was evaluated using both direct current internal resistance (DCIR) and electrochemical impedance spectroscopy (EIS) measurements. DCIR measurements revealed ESR reductions of ∼34%, ∼18%, and ∼21% at 3, 5, and 10 wt % loadings, respectively, compared to the baseline (0 wt %) of ∼0.54 Ω. These results were further confirmed by EIS measurements. Correspondingly, power density increased by ∼52%, ∼27%, and ∼35% at 3, 5, and 10 wt % loadings relative to the baseline (∼29 kW/kg). Additionally, the electrodes exhibited moderate increases in specific capacitance and energy density, along with stable cycling performance (capacitance retention above 85% after 100,000 cycles) and capacitive behavior (α = 0.95−0.97), suggesting favorable charge transfer kinetics. These findings highlight the potential of exfoliated coal-derived graphene as an effective additive for supercapacitor electrodes.

capacitors↗

Indium phosphide solar cells for laser power beaming applications

Lasers can be used to transmit power to photovoltaic cells. Solar cell efficiencies are enhanced significantly under monochromatic light, and therefore a laser beam of proper wavelength could be a very effective source of illumination for a solar array operating at very high efficiencies. This work reviews the modeling studies made on indium phosphide solar cells for such an application. These cells are known to be very radiation resistant and have a potential for high efficiency. Effects of cell series resistance, laser intensity, and temperature on cell performance have been discussed.

Jain, Raj K.↗

Low-resistance contacts for GaAlAs/GaAs cells

Bimetallic contacts utilizing palladium and aluminum, gold, silver, or chromium, are used in reduction of series resistance in GaAlAs/GaAs solar cells, thereby improving cell reliability.

Hovel, H. J.↗

A New Method of Metallization for Silicon Solar Cells

The determination of the firing cycle in a horizontal tube furnace for MoO3: Sn ink composition applied by silk screening process on P or N structured solar cells is presented. In comparison with the strip heater used to determine the reaction mechanism, the reduction of MoO3 in the tube furnace progresses at a much faster rate and the Sn:Mo alloy forms at a much lower temperature. The device characteristics determined by the V-I curve showed a high resistance (approx. 10 Ohms) at peak temperatures between 600 C and 800 C. The high series resistance is attributed to the lack of formation of MoSi2 within the used temperature range.

Macha, M.↗

Lamination of transparent conductive adhesives for tandem solar cell applications

A transparent conductive adhesive (TCA) interlayer for mechanically stacked multijunction solar cells provides adhesive strength and electrical connection between sub-cells when stacked. The fabrication of TCA sheets from an ethyl-vinyl acetate (EVA) matrix and silver coated compliant conductive microspheres, similar to industry-standard EVA encapsulant sheets, compatible with a standard lamination process was developed. Blade coating TCA sheets using 3D printed blades and testing of vertical conduction through the interlayer with a TCA conductivity jig allowed for reproducible measurements and low-cost fabrication. The supplemental information provides design files to enable other researchers to produce their own blades and testing jigs. We identified 0.5 mm as an optimal blade height for producing lab-scale TCA sheets and 120 °C at 3 psi for 10 min as the optimal vacuum lamination process to minimize resistance and possible damage to samples. For TCA sheets with coverages between 0.75% and 9%, the series resistance was approximately 0.2 O cm2 which should result in minimal losses for one-sun photovoltaic applications.

14 SOLAR ENERGY↗

Effects of electron and proton irradiations on n/p and p/n GaAs cells grown by MOCVD

State-of-the-art n/p and p/n heteroface GaAs cells, processed by metal organic chemical vapor deposition, were irradiated by 1 MeV electrons and 37 MeV protons and their performance determined as a function of fluence. It was found that the p/n cells were more radiation resistant than the n/p cells. The increased loss in the n/p cells was attributed to increases in series resistance and losses in the p-region resulting from the irradiation. The greater loss in fill factor observed for the n/p cells introduces the possibility that the presently observed superiority of the p/n cells may not be an intrinsic property of this configuration in GaAs.

Weinberg, Irving↗

Glass-Si heterojunction solar cells

Experimental studies and models for In2O3/Si and SnO2/N-Si solar cells are considered for their suitability in terrestrial applications. The silicon is the active material, and the glass serves as the window to solar radiation, an antireflection coating of the Si, and a low resistance contact. Results show that amorphous windows or layers suppress photocurrent. The interfacial SiO2 layer suppresses photocurrent and increases series resistance. Suppression increases with illumination.

Anderson, R. L.↗

High resolution, low cost solar cell contact development

The experimental work demonstrating the feasibility of the MIDFILM process as a low cost means of applying solar cell collector metallization as reported. Cell efficiencies of above 14% (AMl, 28 C) were achieved with fritted silver metallization. Environmental tests suggest that the metallization is slightly humidity sensitive and degradation is observed on cells with high series resistance. The major yield loss in the fabrication of cells was due to discontinuous grid lines, resulting in high series resitance. Standard lead-tin solder plated interconnections do not appear compatible with the MIDFILM contact. Copper, nickel and molybdemun base powder were investigated as low cost metallization systems. The copper based powder degraded the cell response. The nickel and molybdenum base powders oxidized when sintered in the oxidizing atmosphere necessary to ash the photoresin.

Mardesich, N.↗

Ohmic contact to GaAs semiconductor

Multimetallic layers produce stable, low-resistance contacts for p-type GaAs and p-type GaAlAs devices. Contacts present no leakage problems, and their series resistance is too small to measure at 1 Sun intensity. Ohmic contacts are stable and should meet 20-year-life requirement at 150 C for GaAs combined photothermal/photovoltaic concentrators.

Hovel, H. J.↗

A user oriented computer program for the analysis of microwave mixers, and a study of the effects of the series inductance and diode capacitance on the performance of some simple mixers

A user oriented computer program for analyzing microwave and millimeter wave mixers with a single Schottky barrier diode of known I-V and C-V characteristics is described. The program first performs a nonlinear analysis to determine the diode conductance and capacitance waveforms produced by the local oscillator. A small signal linear analysis is then used to find the conversion loss, port impedances, and input noise temperature of the mixer. Thermal noise from the series resistance of the diode and shot noise from the periodically pumped current in the diode conductance are considered. The effects of the series inductance and diode capacitance on the performance of some simple mixer circuits using a conventional Schottky diode, a Schottky diode in which there is no capacitance variation, and a Mott diode are studied. It is shown that the parametric effects of the voltage dependent capacitance of a conventional Schottky diode may be either detrimental or beneficial depending on the diode and circuit parameters.

Siegel, P. H.↗

Analysis of Electrical Characteristics of Thin Film Photovoltaic Cells

Solar energy is the most abundant form of energy in many terrestrial and extraterrestrial environments. Often in extraterrestrial environments sunlight is the only readily available form of energy. Thus the ability to efficiently harness solar energy is one of the ultimate goals in the design of space power systems. The essential component that converts solar energy into electrical energy in a solar energy based power system is the photovoltaic cell. Traditionally, photovoltaic cells are based on a single crystal silicon absorber. While silicon is a well understood technology and yields high efficiency, there are inherent disadvantages to using single crystal materials. The requirements of weight, large planar surfaces, and high manufacturing costs make large silicon cells prohibitively expensive for use in certain applications. Because of silicon s disadvantages, there is considerable ongoing research into alternative photovoltaic technologies. In particular, thin film photovoltaic technologies exhibit a promising future in space power systems. While they are less mature than silicon, the better radiation hardness, reduced weight, ease of manufacturing, low material cost, and the ability to use virtually any exposed surface as a substrate makes thin film technologies very attractive for space applications. The research group lead by Dr. Hepp has spent several years researching copper indium disulfide as an absorber material for use in thin film photovoltaic cells. While the group has succeeded in developing a single source precursor for CuInS2 as well as a unique method of aerosol assisted chemical vapor deposition, the resulting cells have not achieved adequate efficiencies. While efficiencies of 11 % have been demonstrated with CuInS2 based cells, the cells produced by this group have shown efficiencies of approximately 1 %. Thus, current research efforts are turning towards the analysis of the individual layers of these cells, as well as the junctions between them, to determine the cause of the poor yields. As a student of electrical engineering with some material science background, my role in this research is to develop techniques for analyzing the electrical characteristics of the CuInS2 cells. My first task was to design a shadow mask to be used to place molybdenum contacts under a layer of CuInS;! in order to analyze the contact resistance between the materials. In addition, I have also analyzed evaporated aluminum top contacts and have tested various methods of increasing their thicknesses in order to decrease series resistance. More recently I have worked with other members of the research group in reviving a vertical cold-wall reactor for experimentation with CuInS2 quantum dots. As part of that project, I have improved the design for a variable frequency and pulse width square wave generator to be used in driving the precursor injection process. My task throughout the remainder of my tenure is to continue to analyze and develop tools for the analysis of electrical properties of the CuInS2 cells with the ultimate goal of discovering ways to improve the efficiency of our photovoltaic cells. Traditionally, photovoltaic cells are based on a single crystal silicon absorber. While The research group lead by Dr. Hepp has spent several years researching copper indium

Kasick, Michael P.↗