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At least 73 records · Page 4

Gallium arsenide quantum well-based far infrared array radiometric imager

We have built an array-based camera (FIRARI) for thermal imaging (lambda = 8 to 12 microns). FIRARI uses a square format 128 by 128 element array of aluminum gallium arsenide quantum well detectors that are indium bump bonded to a high capacity silicon multiplexer. The quantum well detectors offer good responsivity along with high response and noise uniformity, resulting in excellent thermal images without compensation for variation in pixel response. A noise equivalent temperature difference of 0.02 K at a scene temperature of 290 K was achieved with the array operating at 60 K. FIRARI demonstrated that AlGaAS quantum well detector technology can provide large format arrays with performance superior to mercury cadmium telluride at far less cost.

Forrest, Kathrine A.↗

SHARC II: A Caltech Submillimeter Observatory Facility Camera with 384 Pixels

SHARC II is a background-limited 350 micron and 450 micron facility camera for the Caltech Submillimeter Observatory undergoing commissioning in 2002. The key component of SHARC II is a 12 x 32 array of doped silicon 'pop-up' bolometers developed at NASA/Goddard. Each 1 mm x 1 mm pixel is coated with a 400 Omega/square bismuth film and located lambda/4 above a reflective backshort to achieve greater than 75% absorption efficiency. The pixels cover the focal plane with greater than 90% filling factor. At 350 microns, the SHARC II pixels are separated by 0.65 lambda/D. In contrast to the silicon bolometers in the predecessor of SHARC II, each doped thermistor occupies nearly the full area of the pixel, which lowers the 1/f knee of tile detector noise to less than 0.03 Hz, under load, at tile bath temperature of 0.36 K. The bolometers are AC-biased and read in 'total power' mode to take advantage of the improved stability. Each bolometer is biased through a custom approx. 130 MOmega CrSi load resistor at 7 K and read with a commercial JFET at 120 K. The JFETs and load resistors are integrated with the detectors into a single assembly to minimize microphonic noise. Electrical connection across the 0.36 K to 4 K and 4 K to 120 K temperature interfaces is accomplished with lithographed metal wires on dielectric substrates. In the best 25% of winter nights on Mauna Kea, SHARC II is expected to have an NEFD at 350 micron of 1 Jy Hz(sup -1/2) or better. The new camera should be at least 4 times faster at detecting known point sources and 30 times faster at mapping large areas compared to the prior instrument.

Dowell, C. Darren↗

Photon detection with parallel asynchronous processing

An approach to photon detection with a parallel asynchronous signal processor is described. The visible or IR photon-detection capability of the silicon p(+)-n-n(+) detectors and the parallel asynchronous processing are addressed separately. This approach would permit an independent analog processing channel to be dedicated to every pixel. A laminar architecture consisting of a stack of planar arrays of the devices would form a 2D array processor with a 2D array of inputs located directly behind a focal-plane detector array. A 2D image data stream would propagate in neuronlike asynchronous pulse-coded form through the laminar processor. Such systems can integrate image acquisition and image processing. Acquisition and processing would be performed concurrently as in natural vision systems. The possibility of multispectral image processing is addressed.

Coon, D. D.↗

A Near-Infrared Mapping Spectrometer for investigation of Jupiter and its satellites

The Near-Infrared-Mapping Spectrometer (NIMS) is one of the science instruments in the Galileo mission, which will explore Jupiter and its satellites in the mid-1990's. The NIMS experiment will map geological units on the surfaces of the Jovian satellites and characterize their mineral content; and, for the atmosphere of Jupiter, investigate cloud properties and the spatial and temporal variability of molecular abundances. The optics are gold-coated reflective and consist of a telescope and a grating spectrometer. The balance of the instrument includes a 17-detector (silicon and indium antimonide) focal plane array, a tuning fork chopper, microprocessor-controlled electronics, and a passive radiative cooler. A wobbling secondary mirror in the telescope provides 20 pixels in one dimension of spatial scanning in a pushbroom mode with 0.5 mr x 0.5 mr instantaneous field of view. The spectral range is 0.7-5.2 microns; resolution is 0.025 micron. NIMS is the first infrared experiment to combine both spatial and spectral mapping capability in one instrument.

Aptaker, Irving M.↗

Fabrication of an Absorber-Coupled MKID Detector

Absorber-coupled microwave kinetic inductance detector (MKID) arrays were developed for submillimeter and far-infrared astronomy. These sensors comprise arrays of lambda/2 stepped microwave impedance resonators patterned on a 1.5-mm-thick silicon membrane, which is optimized for optical coupling. The detector elements are supported on a 380-mm-thick micro-machined silicon wafer. The resonators consist of parallel plate aluminum transmission lines coupled to low-impedance Nb microstrip traces of variable length, which set the resonant frequency of each resonator. This allows for multiplexed microwave readout and, consequently, good spatial discrimination between pixels in the array. The transmission lines simultaneously act to absorb optical power and employ an appropriate surface impedance and effective filling fraction. The fabrication techniques demonstrate high-fabrication yield of MKID arrays on large, single-crystal membranes and sub-micron front-to-back alignment of the micro strip circuit. An MKID is a detector that operates upon the principle that a superconducting material s kinetic inductance and surface resistance will change in response to being exposed to radiation with a power density sufficient to break its Cooper pairs. When integrated as part of a resonant circuit, the change in surface impedance will result in a shift in its resonance frequency and a decrease of its quality factor. In this approach, incident power creates quasiparticles inside a superconducting resonator, which is configured to match the impedance of free space in order to absorb the radiation being detected. For this reason MKIDs are attractive for use in large-format focal plane arrays, because they are easily multiplexed in the frequency domain and their fabrication is straightforward. The fabrication process can be summarized in seven steps: (1) Alignment marks are lithographically patterned and etched all the way through a silicon on insulator (SOI) wafer, which consists of a thin silicon membrane bonded to a thick silicon handle wafer. (2) The metal microwave circuitry on the front of the membrane is patterned and etched. (3) The wafer is then temporarily bonded with wafer wax to a Pyrex wafer, with the SOI side abutting the Pyrex. (4) The silicon handle component of the SOI wafer is subsequently etched away so as to expose the membrane backside. (5) The wafer is flipped over, and metal microwave circuitry is patterned and etched on the membrane backside. Furthermore, cuts in the membrane are made so as to define the individual detector array chips. (6) Silicon frames are micromachined and glued to the silicon membrane. (7) The membranes, which are now attached to the frames, are released from the Pyrex wafer via dissolution of the wafer wax in acetone.

Brown, Ari↗

Development of optimized detector/spectrophotometer technology for low background space astronomy missions

This program was directed towards a better understanding of some of the important factors in the performance of infrared detector arrays at low background conditions appropriate for space astronomy. The arrays were manufactured by Aerojet Electrosystems Corporation, Azusa. Two arrays, both bismuth doped silicon, were investigated: an AMCID 32x32 Engineering mosiac Si:Bi accumulation mode charge injection device detector array and a metal oxide semiconductor/field effect transistor (MOS-FET) switched array of 16x32 pixels.

Jones, B.↗

Fabrication of an X-Ray Imaging Detector

X-ray detector array yields mosaic image of object emitting 1- to 30-keV range fabricated from n-doped silicon wafer. In proposed fabrication technique, thin walls of diffused n+ dopant divide wafer into pixels of rectangular cross section, each containing central electrode of thermally migrated p-type metal. This pnn+ arrangement reduces leakage current by preventing transistor action caused by pnp structure of earlier version.

Alcorn, G. E.↗

On-chip Broadband Load Calibrators for Characterizing Transition-Edge Sensor Bolometers

We describe the design and fabrication of on-chip broadband load calibrators for element-by- element and full circuit characterization of transition-edge sensor (TES) bolometers for cosmic microwave background (CMB) polarimetry. Fabricated in a 4 X 4 grid on a 100 mm silicon wafer, the chips allow systematic testing of individual detector circuit elements without the need for an external blackbody source. This in-situ testing approach provides rapid and efficient characterization of various pixel designs in order to optimize the optical efficiency and control of systematic effects of the detectors. In this work, we demonstrate the on-chip calibrators on the Cosmology Large Angular Scale Surveyor (CLASS) W-band pixels. In particular, we investigate the loss on microstrip transmission lines and measure the performance of various designs of TESs, magic-tees, via-less crossovers, and signal terminations. We also test a filter-bank spectrometer with eight resonators spanning 80 – 105 GHz to characterize the spectral response of circuit elements across the detector bandwidth.

Sumit Dahal↗

Verification of Dosimetry Measurements with Timepix Pixel Detectors for Space Applications

The current capabilities of modern pixel-detector technology has provided the possibility to design a new generation of radiation monitors. Timepix detectors are semiconductor pixel detectors based on a hybrid configuration. As such, the read-out chip can be used with different types and thicknesses of sensors. For space radiation dosimetry applications, Timepix devices with 300 and 500 microns thick silicon sensors have been used by a collaboration between NASA and University of Houston to explore their performance. For that purpose, an extensive evaluation of the response of Timepix for such applications has been performed. Timepix-based devices were tested in many different environments both at ground-based accelerator facilities such as HIMAC (Heavy Ion Medical Accelerator in Chiba, Japan), and at NSRL (NASA Space Radiation Laboratory at Brookhaven National Laboratory in Upton, NY), as well as in space on board of the International Space Station (ISS). These tests have included a wide range of the particle types and energies, from protons through iron nuclei. The results have been compared both with other devices and theoretical values. This effort has demonstrated that Timepix-based detectors are exceptionally capable at providing accurate dosimetry measurements in this application as verified by the confirming correspondence with the other accepted techniques.

Kroupa, M.↗

A Compact Imaging Detector of Polarization and Spectral Content

A new type of image detector will simultaneously analyze the polarization of light at all picture elements in a scene. The integrated Dual Imaging Detector (IDID) consists of a polarizing beam splitter bonded to a charge-coupled device (CCD), with signal-analysis circuitry and analog-to-digital converters, all integrated on a silicon chip. The polarizing beam splitter can be either a Ronchi ruling, or an array of cylindrical lenslets, bonded to a birefringent wafer. The wafer, in turn, is bonded to the CCD so that light in the two orthogonal planes of polarization falls on adjacent pairs of pixels. The use of a high-index birefringent material, e.g., rutile, allows the IDID to operate at f-numbers as high as f/3.5. Other aspects of the detector are discussed.

Rust, D. M.↗

The Yerkes Observatory 60-channel far infrared camera for the Kuiper Airborne Observatory

The Yerkes Observatory Far Infrared Camera employs a two-dimensional, 60-detector array of (3)He-cooled silicon bolometers for broadband imaging in the spectral range of 40 to 240 microns. Four interchangeable filters have effective wavelengths of 60, 100, 160, and 200 microns. Three interchangeable lens sets give pixel sizes of 17, 27, and 45 in. Signals are processed through nitrogen-temperature JFET source-follower amplifiers, warm preamplifiers, and digital signal processors, and the system is controlled through a graphical user interface on a Macintosh computer. The camera has been used to image a wide variety of galactic and extragalactic far infrared sources.

Harper, D. AL, Jr.↗

Parallel-Plate Capacitor TiN KIDs for Infrared Astronomy

The Balloon Experiment for Galactic INfrared Science (BEGINS) is a concept for a sub-orbital observatory that will characterize dust in the vicinity of high-mass stars. It requires detectors with NEPs from 2x10 -16 W Hz -1/2 to 6x10 -17 W Hz -1/2 from 25-250 microns, respectively. The mission’s sensitivity requirements will be met by utilizing arrays of 1,840 lens-coupled, lumped-element kinetic inductance detectors (KIDs) operating at 300 mK. Each KID will consist of a titanium nitride (TiN) parallel strip absorbing inductive section and parallel plate capacitor deposited on a Silicon (Si) substrate. The parallel plate capacitor geometry allows for reduction of the pixel spacing. We present the optical performance of a prototype BEGINS KID array at 25 microns when coupled to Fresnel zone plate lenses. We present sensitivity, optical efficiency and quasiparticle lifetime measurements taken in a cryogenic test bed with a cryogenic blackbody.

Joanna Perido↗

Development of 30 micrometers extrinsic silicon multiplexed infrared deterctor array

Two hybrid infrared (IR) detector arrays of antimony-doped silicon (Si:Sb) were produced and tested to evaluate their potential for use in low-background IR astronomy applications. The format of the arrays is 58 x 62 elements, with 76 micron-square pixels. A random-access, switched metal-oxide semiconductor field effect transistor (MOSFET) silicon multiplexer is used to read out the array elements. Reduced-background tests of signal, noise, and noise equivalent power were conducted over the temperature range 3.2 to 12 K. The arrays were found to have good sensitivity and good uniformity.

Orias, G.↗

Simulation of the ATIC-2 Silicon Matrix for Protons and Helium GCR Primaries at 0.3, 10, and 25 TeV/Nucleon

The energy deposition distribution for protons and helium galactic cosmic ray primaries at 0.3, 10, and 25 TeV/nucleon in the ATIC-2 silicon matrix detector are simulated with GEANT4. The GEANT3 geometrical model of ATIC developed by the University of Maryland was combined with a GEANT4 application developed for the Deep Space Test Bed (DSTB) detector package. The new code included relatively minor modifications to completely describe the ATIC materials and a more detailed model of the Silicon Matrix detector. For this analysis all particles were started as a unidirectional beam at a single point near the center of the Silicon Matrix front surface. The point was selected such that each primary passed through at least two of the overlapping silicon pixels.

Watts, J.↗

Design and Deployment of a Multichroic Polarimeter Array on the Atacama Cosmology Telescope

We present the design and the preliminary on-sky performance with respect to beams and pass bands of a multichroic polarimeter array covering the 90 and 146 GHz cosmic microwave background bands and its enabling broad-band optical system recently deployed on the Atacama Cosmology Telescope (ACT). The constituent pixels are feedhorn-coupled multichroic polarimeters fabricated at NIST. This array is coupled to the ACT telescope via a set of three silicon lenses incorporating novel broad-band metamaterial anti-reflection coatings. This receiver represents the first multichroic detector array deployed for a CMB experiment and paves the way for the extensive use of multichroic detectors and broad-band optical systems in the next generation of CMB experiments.

passbands↗

Enabling Large Focal Plane Arrays through Mosaic Hybridization

We have demonstrated the hybridization of large mosaics of far-infrared detectors, joining separately fabricated sub-units into a single unit on a single, large substrate. We produced a single detector mockup on a 100mm diameter wafer and four mockup readout quadrant chips from a separate 100mm wafer. The individually fabricated parts were hybridized using a Suss FC150 flip chip bonder to assemble the detector-readout stack. Once all of the hybridized readouts were in place, a single, large and thick silicon substrate was placed on the stack and attached with permanent epoxy to provide strength and a Coefficient of Thermal Expansion (CTE) match to the silicon components underneath. Wirebond pads on the readout chips connect circuits to warm readout electronics; and were used to validate the successful superconducting electrical interconnection of the mockup mosaic-hybridized detector. This demonstration is directly scalable to 150 mm diameter wafers, enabling pixel areas over ten times the area currently demonstrated.

Miller, Timothy M.↗

Enabling Large Focal Plane Arrays Through Mosaic Hybridization

We have demonstrated advances in mosaic hybridization that will enable very large format far-infrared detectors. Specifically we have produced electrical detector models via mosaic hybridization yielding superconducting circuit paths by hybridizing separately fabricated sub-units onto a single detector unit. The detector model was made on a 100mm diameter wafer while four model readout quadrant chips were made from a separate 100mm wafer. The individually fabricated parts were hybridized using a flip-chip bonder to assemble the detector-readout stack. Once all of the hybridized readouts were in place, a single, large and thick silicon substrate was placed on the stack and attached with permanent epoxy to provide strength and a Coefficient of Thermal Expansion match to the silicon components underneath. Wirebond pads on the readout chips connect circuits to warm readout electronics; and were used to validate the successful superconducting electrical interconnection of the model mosaic-hybrid detector. This demonstration is directly scalable to 150 mm diameter wafers, enabling pixel areas over ten times the area currently available.

Miller, TImothy M.↗

Enabling Large Focal Plane Arrays Through Mosaic Hybridization

We have demonstrated advances in mosaic hybridization that will enable very large format far-infrared detectors. Specifically we have produced electrical detector models via mosaic hybridization yielding superconducting circuit paths by hybridizing separately fabricated sub-units onto a single detector unit. The detector model was made on a 100mm diameter wafer while four model readout quadrant chips were made from a separate 100mm wafer. The individually fabricated parts were hybridized using a flip-chip bonder to assemble the detector-readout stack. Once all of the hybridized readouts were in place, a single, large and thick silicon substrate was placed on the stack and attached with permanent epoxy to provide strength and a Coefficient of Thermal Expansion match to the silicon components underneath. Wirebond pads on the readout chips connect circuits to warm readout electronics; and were used to validate the successful superconducting electrical interconnection of the model mosaic-hybrid detector. This demonstration is directly scalable to 150 mm diameter wafers, enabling pixel areas over ten times the area currently available.

Miller, Timothy M.↗