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At least 73 records · Page 4

Thermal analysis of Bridgman-Stockbarger growth

A thermal analysis of a cylindrical HgCdTe sample in a Bridgman-Stockbarger crystal growth configuration was conducted with emphasis on the thermal profile, interface shape and position, and the thermal gradients at the liquid-solid interface. Alloys of HgTe and CdTe with compositions approximating 20 percent CdTe, 80 percent HgTe were used. This composition results in a bandgap suited for the detection of 10.6 micron CO2 radiation. The sensitivity of the sample thermal characteristics to important growth parameters, such as thermal diffusivities, thermal conductivities, furnace temperature profile, ampoule dimensions, and growth velocity was assessed. Numerical techniques and associated computational models necessary to analyze the heat transfer process within the sample and the Bridgman-Stockbarger boundary conditions were developed. This thermal analysis mode was programmed in FORTRAN V, and is currently operational on the MSFC Univac 1100 system.

Knopf, F. W.↗

Terrestrial growth of lead-tin-telluride by techniques related to low G growth

A modified Bridgman-Stockbarger furnace was constructed for a study of the solidification of silver, germanium and lead-tin-telluride. The melt-solid interface position with respect to the furnace and its temperature profile was determined by measuring the discontinuity in the slope of temperature as a function of position in the melt and in the solid. The results show that the interface position of the semiconductors germanium and lead-tin-telluride was essentially constant with respect to the furnace and hence the growth rate was constant and equal to the sample translation rate of 0.046 cm/min and 0.178 cm/min in each case. The metal, silver, on the other hand showed a continuous interface migration toward the hot zone of the furnace and always exhibited a growth rate which was higher than the ampoule translation rate. The K sub L/K sub S ratio of lead-tin-telluride was determined to be 2.33 + or - 0.06 where K sub L,S denotes the thermal conductivity of the liquid, solid respectively. The value of K sub L was calculated to be about 0.054 Watt 0.1 cm 0.1 K. The diffusion boundary layer thickness was calculated for lead-tin-telluride to be about 0.05 cm using a liquid diffusivity of .00007 sq cm/sec.

Jesser, W. A.↗

Two dimensional, transient catalytic combustion of CO-air on platinum

The light off transient of catalytic combustion of lean CO-air mixtures in a platinum coated channel of a honeycomb monolith is studied with a model that resolves transient radial and axial gradients in both the gas and the solid. For the conditions studied it is concluded that: the initial heat release occurs near the entrance at the gas-solid interface and is controlled by heterogeneous reactions; large spatial and temporal temperature gradients occur in the solid near the entrance controlled mostly by the availability of fuel; the temperature of the solid near the entrance achieves almost its steady state value before significant heating of the back; heterogeneous reactions and the gas heated up front and flowing downstream heat the back of the solid; the overall transient time is controlled by the thermal inertia of the solid and by forced convection; radiation significantly influences both transient and steady state particularly near the entrance; the oxidation of CO occurs mostly on the catalyst and becomes diffusion controlled soon into the transient.

Sinha, N.↗

Experiment 13: The Study of Dopant Segregation Behavior During the Growth of GaAs in Microgravity on USML-2

An investigation into the segregation behavior of selenium doped gallium arsenide (Se/GaAs) during directional solidification in the microgravity environment was conducted using the Crystal Growth Furnace (CGF) aboard the second United States Microgravity Laboratory (USML-2). Two crystals were successfully processed on USML-2, which lasted from October 20 to November 7, 1995. The first sample was processed for 67 hours, 45 minutes (MET 5/04:53:45-8/00:23:50) and included 19 hours of growth at 0.5 microns/sec which yielded 3.42 cm of sample length, and 5 hours of growth at 1.5 microns/sec which yielded 2.7 cm of sample. During the second experiment, the furnace temperature was adjusted to move the melt-solid interface position towards the hot end of the furnace. The second sample was processed for 50 hours, 10 minutes (MET 8/18:48:49-10/21:58:54) and included 11 hours of growth at 0.5 microns/sec which yielded 1.98 cm of sample, and 1 hour, 25 minutes of growth at 5.0 microns/sec which yielded 2.6 cm of sample. This sample provides an order of magnitude change in growth rate and reproduces one of the growth rates used during USML-1. In contrast to the results from USML-1, no voids were present in either crystal grown on USML-2. The absence of voids in either sample indicates that growth rate changes alone were not responsible for the formation of voids found in the crystals grown on USML-1. Sections of the ground-based and flight crystals grown on USML-2 were cut and polished. All of the interface demarcation lines expected from the current pulse interface demarcation (CPID) system have been identified. These measurements have been analyzed for interface positions, interface shapes, and growth rates. Using a newly developed technique, based on experimental and numerical results, the seeding interface reproducibility from run to run was <= 2.5 mm. The seeding interface position could be controllably moved, with respect to the furnace zones, by adjusting the control set points of the heating zones. The interface shapes flattened slightly as the interface position moved closer to the hot zone but was always an unfavorable concave into the solid shape. The growth rate was found to equal the furnace translation rate, after a 2 -hour transient, for growth rates <= 1.0 microns/sec. Segregation measurements for the ground-based crystals are indicative of complete mixing behavior, as expected. Segregation measurements of the flight crystals are still in progress.

Matthiesen, David H.↗

Behavior of ceramic particles at the solid-liquid metal interface in metal matrix composites

Directional solidification results were obtained in order to investigate particle behavior at the solid-liquid interface in Al-2 pct Mg (cellular interface) and Al-6.1 pct Ni (eutectic interface) alloys. It is found that particles can be entrapped in the solid if adequate solidification rates and temperature gradients are used. Model results showed critical velocity values slightly higher than those obtained experimentally.

Stefanescu, D. M.↗

Growth rates and interface shapes in germanium and lead tin telluride observed in-situ, real-time in vertical Bridgman furnaces

Using the advanced technology developed to visualize the melt-solid interface in low Prandtl number materials, crystal growth rates and interface shapes have been measured in germanium and lead tin telluride semiconductors grown in vertical Bridgman furnaces. The experimental importance of using in-situ, real time observations to determine interface shapes, to measure crystal growth rates, and to improve furnace and ampoule designs is demonstrated. The interface shapes observed in-situ, in real-time were verified by quenching and mechanically induced interface demarcation, and they were also confirmed using machined models to ascertain the absence of geometric distortions. Interface shapes depended upon the interface position in the furnace insulation zone, varied with the nature of the crystal being grown, and were dependent on the extent of transition zones at the ends of the ampoule. Actual growth rates varied significantly from the constant translation rate in response to the thermophysical properties of the crystal and its melt and the thermal conditions existing in the furnace at the interface. In the elemental semiconductor germanium the observed rates of crystal growth exceeded the imposed translation rate, but in the compound semiconductor lead tin telluride the observed rates of growth were less than the translation rate. Finally, the extent of ampoule thermal loading influenced the interface positions, the shapes, and the growth rates.

Barber, P. G.↗

Effect of heat transfer of melt/solid interface shape and solute segregation in Edge-Defined Film-Fed growth - Finite element analysis

The effects of the heat transfer environment in Edge-Defined Film-Fed Growth on melt-solid interface shape and lateral dopant segregation are studied by finite-element analysis of two-dimensional models for heat and mass transfer. Heat transfer configurations are studied that correspond to the uniform surroundings assumed in previous models and to lowand high-speed growth systems. The maximum growth rate for a silicon sheet is calculated and the range of validity of one-dimensional heat transfer models is established. The lateral segregation that results from curvature of the solidification interface is calculated for two solutes, boron and aluminum. In this way, heat transfer is linked directly to the uniformity of the product crystal.

Ettouney, H. M.↗

Conjugated heat transfer in a laminar boundary layer with heat source at the wall

This work presents the solution of the temperature field in a two-dimensional laminar incompressible flow over a conducting solid plate with a line heat source located at the fluid-solid interface perpendicular to the flow direction. A numerical scheme was used to obtain the temperature profiles as a function of the source strength, and of the properties of the fluid and the solid. The heat conduction and forced convection in the fluid and the heat conduction in the solid were solved for the case of moderate temperature rise, where the assumption of constant properties applies. The model enables the improvement of an instrument for the detection of boundary layer separation. It was found that for the actual parameters of the separation detector, a distance of 4 to 24 mm between the sensors gives an indication of 70 percent of the maximum temperature difference.

Brosh, A.↗

Material and process constraints for a flat interface in the Bridgman-Stockbarger technique

The functional relationships between various material and process parameters necessary for a flat interface in the Bridgman-Stockbarger technique are given. In particular, two boundary condition cases are considered. The findings imply that the material and process parameters cannot be arbitrary if a flat melt-solid interface is to be achieved. The sensitivity of one parameter to changes in another parameter suggests great care should be taken in obtaining the various material parameters.

Foster, L. M.↗

Morphological Stability and Fluid Dynamics of Vapor Crystal Growth

A fundamental understanding of the conditions under which crystals can retain morphological stability, i.e., shape stability of the advancing interface, during growth from vapors was studied. Morphological stability (MS) is a necessary condition for the growth of homogeneous single crystals required for numerous device applications. For crystallization from melts, the MS concepts are well developed and are essentially based on heat and mass transfer conditions about the advancing interface. For crystallization from vapors, the MS requirements are more complex and not well understood. The added complexity arises from the fact that anisotropies in interfacial kinetics are typically stronger in crystallization from vapors than from melts. These pronounced anisotropies root in the distinctly lower atomic roughness of most vapor-solid interfaces.

Rosenberger, F.↗

Chemistry of Ionic Silver and Implications for Design of Potable Water Systems

Ionic silver (Ag+) at approximately 400 µg/L is proposed as an ingestible biocide for potable water systems in future human spacecraft. This paper investigates the underlying chemistry of the silver ion at potable concentrations and its interactions with other solutes and surfaces. This chemistry evaluation will elucidate ionic silver behavior in potable water systems and enable design optimization to minimize ionic silver depletion during long duration crewed and uncrewed segments of missions. Ionic silver can be lost from the water phase to the water-solid interface via adsorption as the cation and oxidation-reduction reactions with passivation defects. The adsorption and oxidation-reduction reactions of heritage piping materials used on spacecraft – stainless steel 316L, titanium, Inconel 718, and Teflon flex hoses – are considered. Conceptual models of adsorption isotherms and pH adsorption edges are applied to understand the role of pH and the surface-to-volume ratio of pipes and tanks on the partitioning of ionic silver between the aqueous and the solid phase during aging. The effect of repeated exposure-aging to an Ag+ containing solution of two passivated alloys (316L and Inconel 718) is evaluated to determine if an equilibrium concentration of ionic silver in the potable range is attainable for a given alloy and surface-to-volume ratio. Aging unpassivated and passivated 316L reduced the ionic silver depletion rate relative to first time exposures, but the same beneficial effect was not observed for Inconel 718.

Water↗

Computer program MCAP-TOSS calculates steady-state fluid dynamics of coolant in parallel channels and temperature distribution in surrounding heat-generating solid

Computer program calculates the steady state fluid distribution, temperature rise, and pressure drop of a coolant, the material temperature distribution of a heat generating solid, and the heat flux distributions at the fluid-solid interfaces. It performs the necessary iterations automatically within the computer, in one machine run.

Lee, A. Y.↗

Shear rupture of a directionally solidified eutectic gamma/gamma prime - alpha (Mo) alloy

Directionally solidified Mo alloys are evaluated to determine the shear rupture strength and to possibly improve it by microstructural and heat treatment variations. Bars of the alloy containing nominally 5.7% Al and 33.5% Mo by weight with balance Ni were directionally solidified at rates between 10 and 100 mm per hour in furnaces with thermal gradients at the liquid-solid interface of 250 or 100 C per cm. A limited number of longitudinal shear rupture tests were conducted at 760 C and 207 MPa in the as - solidified and in several heat treated conditions. It is shown that shear rupture failures are partly transgranular and that resistance to failure is prompted by good fiber alignment and a matrix structure consisting mainly of gamma prime. Well aligned as - solidified specimens sustained the shear stress for an average of 81 hours. A simulated coating heat treatment appeared to increase the transformation of gamma to gamma prime and raised the average shear life of aligned specimens to 111 hours. However, heat treatments at 1245 C and especially at 1190 C appeared to be detrimental by causing partial solutioning of the gamma prime, and reducing lives to 47 and 10 hours, respectively.

Harf, F. H.↗

Shear rupture of a directionally solidified eutectic gamma/gamma-prime - alpha /Mo/ alloy

Directionally solidified gamma/gamma-prime - alpha (Mo) eutectic alloys are being evaluated for application as advanced aircraft engine turbine blades. Their excellent high-temperature strength is partly due to their directionally aligned microstructure. However, alloys with such directional structures may display low shear strength at 760 C, the operating temperature of advanced blade roots. The objective of this investigation was to determine the shear rupture strength of the gamma/gamma-prime - alpha eutectic alloy and possibly to improve it by microstructural and heat-treatment variations. Bars of gamma/gamma-prime - alpha alloy containing nominally 5.7% Al and 33.5% Mo by weight with balance Ni were directionally solidified at rates between 10 and 100 mm per hour. Materials were solidified in furnaces with thermal gradients at the liquid-solid interface of 250 or 100 C per cm. A limited number of longitudinal shear rupture tests were conducted at 760 C and 207 MPa in the as-solidified and in several heat-treated conditions. It was found that the shear rupture failures are partly transgranular and that resistance to failure is promoted by good fiber alignment and a matrix structure consisting mainly of gamma-prime. Well-aligned as-solidified specimens sustained the shear stress for an average of 81 hours, while cellular material failed in one hour or less.

Harf, F. H.↗

Finite element methodology for transient conduction/forced-convection thermal analysis

Finite element methodology for steady state thermal analysis of convectively cooled structures has been extended for transient analysis. The finite elements are based on representing the fluid passages by fluid bulk-temperature nodes and fluid-solid interface nodes. The formulation of the finite element equations for a typical flow passage is based on the weighted residual method with upwind weighting functions. Computer implementation of the convective finite element methodology using explicit and implicit time integration algorithms is described. Accuracy and efficiency of the methodology is evaluated by comparisons with analytical solutions and finite-difference lumped-parameter analyses. The comparative analyses demonstrate that finite element conduction/conduction methodology may be used to predict transient temperatures with an accuracy equal or superior to the lumped-parameter finite-difference method.

Thornton, E. A.↗

Continuous coating of silicon-on-ceramic

Growth of sheet silicon on low-cost substrates has been demonstrated by the silicon coating with inverted meniscus (SCIM) technique. A mullite-based ceramic substrate is coated with carbon and then passed over a trough of molten silicon with a raised meniscus. Solidification occurs at the trailing edge of the downstream meniscus, producing a silicon-on-ceramic (SOC) layer. Meniscus shape and stability are controlled by varying the level of molten silicon in a reservoir connected to the trough. The thermal conditions for growth and the crystallographic texture of the SOC layers are similar to those produced by dip-coating, the original technique of meniscus-controlled growth. The thermal conditions for growth have been analyzed in some detail. The analysis correctly predicts the velocity-thickness relationship and the liquid-solid interface shape for dip-coating, and appears to be equally applicable to SCIM-coating. Solar cells made from dip-coated SOC material have demonstrated efficiencies of 10% on 4-sq cm cells and 9.9% on 10-sq cm cells.

Heaps, J. D.↗

Analysis of forced convection heat flow effects in horizontal ribbon growth from the melt

A heat transport analysis which considers forced convective fluid flow induced by the motion of a continuous solid ribbon over a melt has been done for horizontal ribbon growth. A model has been developed which treats both 'active' and 'passive' cooling at the ribbon surface. The results show that heat flow from the melt requires active cooling in the region of the leading growth edge or growth tip. Steady-state liquid-solid interface shape is analyzed and numerical results are given for steady-state pulling of silicon ribbon.

Zoutendyk, J. A.↗