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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS2024

A Perspective on Multi-Source Energy Harvesting Technology Using Piezoelectric and Thermoelectric Materials

Energy harvesting using various locally available energy sources such as vibration energy, heat, sound, or magnetic field have become attractive topics for supplying power to modular electronic devices making them run independently in extreme environments. In this paper, we will be discussing the perspectives on thermoelectric (TE) and piezoelectric materials and devices, and then the concept of multi-source energy harvester using piezoelectric and thermoelectric devices and integration of them into a reliable and independent power source. TE materials having low thermal conductivity and high figure-of-merit ( zT ) are developed to convert even a small temperature gradient efficiently into electrical energy with the state-of-the-art conversion efficiency of ~15% and output power of ~56 W from single device. The piezoelectric device architecture is configured using high performance piezoelectric ceramics (Cu-Mn-PIN-PMN-PT). These ceramics exhibit high piezoelectric coefficient with high mechanical quality factor and low dielectric loss factor. Using these piezoelectric materials, power density as high a 2 mW/cm 2 is demonstrated in 1-1.5 g vibration environments. The piezoelectric device is attached on the surface of TE module to capture both the vibration and thermal energy sources to realize dual mode energy harvester. The multi-energy transfer strategy opens opportunities for a future generation of wireless and modular electronic devices. These devices would be useful in powering wearable electronic devices, micro sensor chargers, etc. in extreme environmental conditions using body heat/thermal sources and induced motion/vibrations.

Piezoelectric↗
NASA NTRS1997

New Thermoelectric Materials and Devices for Terrestrial Power Generators

The development of new, more efficient, materials and devices is the key to expand the range of appplications of thermoelectric generators. New potential terrestrial applications have been recently described in the literature. There exists a wide range of heat source temperatures for these applications. Recent results on novel materials have demonstrated that ZT values significantly larger that 1.0 could be obtained in the 475 to 975K temperature range. These materials are excellent candidates to be used in terrestrial thermoelectric power generators using waste heat or liquid fuels.

thermoelectric↗
NASA NTRS2015

Analysis of Advanced Thermoelectric Materials and Their Functional Limits

The world's demand for energy is increasing dramatically, but the best energy conversion systems operate at approximately 30% efficiency. One way to decrease energy loss is in the recovery of waste heat using thermoelectric (TE) generators. A TE generator is device that generates electricity by exploiting heat flow across a thermal gradient. The efficiency of a TE material for power generation and cooling is determined by the dimensionless Figure of Merit (ZT): ZT = S(exp. 2)sigmaT/κ: where S is the Seebeck coefficient, sigma is the electrical conductivity, T is the absolute temperature, and κ is the thermal conductivity. The parameters are not physically independent, but intrinsically coupled since they are a function of the transport properties of electrons. Traditional research on TE materials has focused on synthesizing bulk semiconductor-type materials that have low thermal conductivity and high electrical conductivity affording ZT values of 1. The optimization of the σ/κ ratio is difficult to achieve using current material formats, as these material constants are complementary. Recent areas of research are focusing on using nanostructural artifacts that introduce specific dislocations and boundary conditions that scatter the phonons. This disrupts the physical link between thermal (phonon) and electrical (electron) transport. The result is that κ is decreased without decreasing σ. These material formats give ZT values of up to 2 which represent approximately 18% energy gain from waste heat recovery. The next challenge in developing the next generation of TE materials with superior performance is to tailor the interconnected thermoelectric physical parameters of the material system. In order to approach this problem, the fundamental physics of each parameter S, sigma, and κ need to be physically understood in their context of electron/phonon interaction for the construction of new high ZT thermoelectric devices. Is it possible to overcome the physical limit imposed by of the effect of phonon lattice oscillation and energetic electrons towards thermal conductivity? Is the Seebeck coefficient, based on the difference in voltage over temperature gradient ( deltaV/deltaT), an intrinsic parameter of each material? All these parameters were manipulated using nano-bridge and twin-lattice structural concepts at the NASA Langley Research Center. This talk will review the current trend of TE research to optimize the ZT and discuss about new approaches on increasing ZT within functional limits of each parameter.

Kim, Hyun Jung↗
NASA NTRS1980

Refractory thermoelectric materials

The Seebeck coefficient and electrical resistivity of boron-carbon (B-C) and boron-carbon-silicon (B-C-Si)) P-type alloys are reported for temperatures up to 500 C. Using available literature values for the thermal conductivity of B-C alloys, thermoelectric figure-of-merit values of 1.37 x 10 to the -5th and 1.20 x 10 to the -4th/deg C are calculated for 100 and 500 C, respectively. Sulfur-deficient rare earth sesquisulfide N-type alloys exhibit Seebeck coefficients which are relatively insensitive to alloy composition over the composition range investigated but are very sensitive to fabrication parameters.

Elsner, N. B.↗
NASA NTRS1971

Adavanced RTG and thermoelectric materials study

A comprehensive, generalized two-dimensional RTG analysis computer program was developed. This program is capable of analyzing any specified RTG design under a wide range of transient as well as steady-state operating conditions. The feasibility of a new concept for the design of segmented (or single-phase) thermoelectric couples was demonstrated. A SiGe-PbTe segmented couple involving pressure contacted junctions at the intermediate- and hot-junction temperatures was successfully encapsulated in a hermetically sealed bellows enclosure. This bellows-encapsulated couple was operated between a hot- and cold-junction temperature of 1200 K and 450 K, respectively, with a measured energy conversion efficiency of 7.6 + or - .5 per cent. An experimental study of selected sublimation barrier schemes revealed that a significant reduction in the sublimation rate of p-type PbTe could be achieved by using multiple layers of SiO2 fibers. A comparison of the barrier effectiveness is given for three different barrier designs.

Eggers, P. E.↗
NASA NTRS1971

Resistivity and Hall measurements of thermoelectric materials

Instrumentation setup measures resistivity values between .000003 and 100,000 ohm-cm and Hall values between 0.2 and 10 billion cc/coulomb, with an absolute error of less than 5 percent. Results of measurement are given for 8 electrical brush specimens and pure silver.

Ruff, R. D.↗
NASA NTRS1988

Improved GaP doped SiGe thermoelectric material

Work at TECO has independently confirmed the early results obtained at JPL that high-temperature heat-treatment of SiGe/GaP alloys can significantly increase the figure of merit Z of these alloys. Several possible reasons for this improvement are given. Experiments are in progress to test these various hypothesis.

Vandersande, Jan W.↗
NASA NTRS1991

Characteristics of a promising new thermoelectric material - Ruthenium silicide

A preliminary study on arc-melted samples has indicated that ruthenium silicide has the potential to obtain figure-of-merit values four times higher than that of conventional silicon-germanium material. In order to realize the high figure-of-merit values, high-quality crystal from the melt is needed. A Bridgman-like method has been employed and has realized much better crystals than arc-melted ones.

Ohta, Toshitaka↗