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Report describes effects of power and temperature overstress on Semtech and Micro Semiconductor devices. Only two Semtech diodes failed catastrophically. Testing on Micro Semiconductor devices stopped because failure limit was reached. Micro diodes suffered lead separation.
A digital beam deflector based partly on liquid crystals has been demonstrated as a prototype of a class of optical beam-steering devices that contain no mechanical actuators or solid moving parts. Such beam-steering devices could be useful in a variety of applications, including free-space optical communications, switching in fiber-optic communications, general optical switching, and optical scanning. Liquid crystals are of special interest as active materials in nonmechanical beam steerers and deflectors because of their structural flexibility, low operating voltages, and the relatively low costs of fabrication of devices that contain them.
Devices based on gallium nitride (GaN) have great potential for high power switching applications due to the high breakdown field and high electron mobility. In this work, we present a vertical GaN-on-GaN PN power diode using high dielectric constant material, BaTiO3, for electrical field management and high breakdown voltages, in together with an optimized guard-ring and field plate design. Numerical simulation shows that with high-k dielectrics implemented, the peak electrical field at the PN interface is mitigated from 3.5 to 3.1 MV/cm under a reverse bias of −9.05 kV. The device design with BaTiO3 shows a breakdown voltage of 9.65 kV or about 600 V improvement. The fabricated diodes with a 57 μm thick drift layer demonstrate a breakdown voltage of 7.86 kV on a bulk GaN substrate. The device has an on-resistance of 2.8 mΩ cm2 and a Baliga figure of merit of 22 GW/cm2.
In this work, we present the theory and modeling framework of a diamond optically gated junction field‐effect transistor (DOGFET). The device utilizes nitrogen substitutional centers in type‐1b diamond to optically modulate a p‐ boron doped diamond channel. Using sub‐gap lasers with intensities as low as 100 W/cm 2 , electrons are optically excited from substitutional nitrogen sites to the conduction band of the diamond substrate, thus enabling the optical gate to exercise control on modulating the space‐charge region at the junction and therefore the channel conductivity. We show that the device can deliver a current of 7 μA/μm, or equivalently 1750 A/cm 2 , while switching at a frequency greater than 100 kHz, in a form factor of 5 μm 2 . The breakdown voltage is found to be greater than 1850 V, with a breakdown field strength of ~13 MV/cm. Moreover, the device supports nonvolatile operation with a “memory effect” enabling single transistor state retention. The presented simulation framework provides a physically grounded insight into the limits and opportunities of optoelectronic diamond systems.
A thin, nearly wireless adaptive optical device capable of dynamically modulating the shape of a mirror in real time to compensate for atmospheric distortions and/or variations along an optical material is provided. The device includes an optical layer, a substrate, at least one electronic circuit layer with nearly wireless architecture, an array of actuators, power electronic switches, a reactive force element, and a digital controller. Actuators are aligned so that each axis of expansion and contraction intersects both substrate and reactive force element. Electronics layer with nearly wireless architecture, power electronic switches, and digital controller are provided within a thin-film substrate. The size and weight of the adaptive optical device is solely dominated by the size of the actuator elements rather than by the power distribution system.
A thin, nearly wireless adaptive optical device capable of dynamically modulating the shape of a mirror in real time to compensate for atmospheric distortions and/or variations along an optical material is provided. The device includes an optical layer, a substrate, at least one electronic circuit layer with nearly wireless architecture, an array of actuators, power electronic switches, a reactive force element, and a digital controller. Actuators are aligned so that each axis of expansion and contraction intersects both substrate and reactive force element. Electronics layer with nearly wireless architecture, power electronic switches, and digital controller are provided within a thin-film substrate. The size and weight of the adaptive optical device is solely dominated by the size of the actuator elements rather than by the power distribution system.
A thin nearly wireless adaptive optical device capable of dynamically modulating the shape of a mirror in real time to compensate for atmospheric distortions and/or variations along an optical material is provided. The device includes an optical layer, a substrate, at least one electronic circuit layer with nearly wireless architecture, an array of actuators, power electronic switches, a reactive force element, and a digital controller. Actuators are aligned so that each axis of expansion and contraction intersects both substrate and reactive force element. Electronics layer with nearly wireless architecture, power electronic switches, and digital controller are provided within a thin-film substrate. The size and weight of the adaptive optical device is solely dominated by the size of the actuator elements rather than by the power distribution system.
Understanding the pathways and time scales underlying electrically driven insulator-metal transitions is crucial for uncovering the fundamental limits of device operation. Using stroboscopic electron diffraction, we perform synchronized time-resolved measurements of atomic motions and electronic transport in operating vanadium dioxide (VO 2 ) switches. We discover an electrically triggered, isostructural state that forms transiently on microsecond time scales, which is shown by phase-field simulations to be stabilized by local heterogeneities and interfacial interactions between the equilibrium phases. This metastable phase is similar to that formed under photoexcitation within picoseconds, suggesting a universal transformation pathway. Our results establish electrical excitation as a route for uncovering nonequilibrium and metastable phases in correlated materials, opening avenues for engineering dynamical behavior in nanoelectronics.
High-capacity cooling options remain limited for many small-scale applications such as microelectronic components, miniature sensors, and microsystems. A microelectromechanical system (MEMS) using a Stirling thermodynamic cycle to provide cooling or heating directly to a thermally loaded surface is being developed at the NASA Glenn Research Center to meet this need. The device can be used strictly in the cooling mode or can be switched between cooling and heating modes in milliseconds for precise temperature control. Fabrication and assembly employ techniques routinely used in the semiconductor processing industry. Benefits of the MEMS cooler include scalability to fractions of a millimeter, modularity for increased capacity and staging to low temperatures, simple interfaces, limited failure modes, and minimal induced vibration. The MEMS cooler has potential applications across a broad range of industries such as the biomedical, computer, automotive, and aerospace industries. The basic capabilities it provides can be categorized into four key areas: 1) Extended environmental temperature range in harsh environments; 2) Lower operating temperatures for electronics and other components; 3) Precision spatial and temporal thermal control for temperature-sensitive devices; and 4) The enabling of microsystem devices that require active cooling and/or temperature control. The rapidly expanding capabilities of semiconductor processing in general, and microsystems packaging in particular, present a new opportunity to extend Stirling-cycle cooling to the MEMS domain. The comparatively high capacity and efficiency possible with a MEMS Stirling cooler provides a level of active cooling that is impossible at the microscale with current state-of-the-art techniques. The MEMS cooler technology builds on decades of research at Glenn on Stirling-cycle machines, and capitalizes on Glenn s emerging microsystems capabilities.
Fluorescent proteins (FPs) have recently emerged as a serious contender for realizing ultralow threshold room temperature exciton–polariton condensation and lasing. Here, this contribution investigates the thermalization of FP microcavity exciton–polaritons upon optical pumping under ambient conditions. Polariton cooling is realized using a new FP molecule, called mScarlet, coupled strongly to the optical modes in a Fabry–Pérot cavity. Interestingly, at the threshold excitation energy (fluence) of ≈9 nJ per pulse (15.6 mJ cm –2 ), an effective temperature is observed, T eff ≈ 350 ± 35 K close to the lattice temperature indicative of strongly thermalized exciton–polaritons at equilibrium. This efficient thermalization results from the interplay of radiative pumping facilitated by the energetics of the lower polariton branch and the cavity Q-factor. Direct evidence for dramatic switching from an equilibrium state into a metastable state is observed for the organic cavity polariton device at room temperature via deviation from the Maxwell–Boltzmann statistics at k || = 0 above the threshold. Thermalized polariton gases in organic systems at equilibrium hold substantial promise for designing room temperature polaritonic circuits, switches, and lattices for analog simulation.
The inverse plasma switch INPIStron was employed for 10kJ/40kV capacitor bank discharge system to produce focused dense plasmas in hypocycloidal-pinch (HCP) devices. A single unit and an array of multiple HCP's were coupled as the load of the pulsed power circuit. The geometry and switching plasma dynamics were found advantageous and convenient for commutating the large current pulse from the low impedance transmission line to the low impedance plasma load. The pulse power system with a single unit HCP, the system A, was used for production of high temperature plasma focus and its diagnostics. The radially running down plasma dynamics, revealed in image converter photographs, could be simulated by a simple snow-plow model with a correction for plasma resistivity. The system B with an array of 8-HCP units which forms a long coaxial discharge chamber was used for pumping a Ti-sapphire laser. The intense UV emission from the plasma was frequency shifted with dye-solution jacket to match the absorption band of the Ti crystal laser near 500 nm. An untuned laser pulse energy of 0.6 J/pulse was obtained for 6.4 kJ/40 kV discharge, or near 103 times of the explosion limit of conventional flash lamps. For both systems the advantages of the INPIStron were well demonstrated: a single unit is sufficient for a large current (greater than 50 kA) without increasing the system impedance, highly reliable and long life operation and implied scalability for the high power ranges above I(sub peak) = 1 MA and V(sub hold) = 100 kV.
The dream of achieving a universal memory that can provide robust non-volatile memory states along with low-energy operation has been the key driving force of memory research. Despite dominating the memory market, conventional charge-based memories cannot satisfy these requirements. However, UltraRAM, an oxide-free charge-based memory cell, aims to achieve both of these requirements. This device achieves non-volatility (with an endurance of over 10 7 cycles and a retention of over 1000 years) along with switching at low-voltage (±2.3 V) utilizing a triple-barrier resonant tunneling (TBRT) structure made of InAs/AlSb. In this work, we propose an array design for UltraRAM-based memory devices. Our proposed memory array features separate read-write path and eliminates the possibility of accidentally switching the memory states stored in the array. Moreover, our design allows us to read all the cells in a column in one cycle without imposing any limit on the scalability. Besides, since the read operation in our proposed design is independent of the write mechanism, there is flexibility to optimize the read operation for memory and in-memory computing applications.
A model for predicting voltages and currents of passive loads during turn on and turn off of remote power controllers is presented. The model is concerned with two devices, a five ampere device and a twenty ampere device. The model is presented as a general circuit diagram. The load current is determined by the load parameters and the conditions at switching and the steady state conditions are reached according to time constants determined by the load. The model is used to analyze the turn on and turn off conditions of certain loads including a R-C load and a R-L load.
Variable microwave-frequency couplers are highly useful components in classical communication systems and likely will play an important role in quantum communication applications. Conventional semiconductor-based microwave couplers have been used with superconducting quantum circuits, enabling, for example, the in situ measurements of multiple devices via a common readout chain. However, the semiconducting elements are lossy and furthermore dissipate energy when switched, making them unsuitable for cryogenic applications requiring rapid, repeated switching. Superconducting Josephson junction-based couplers can be designed for dissipation-free operation with fast switching and are easily integrated with superconducting quantum circuits. These enable on-chip, quantum-coherent routing of microwave photons, providing an appealing alternative to semiconductor switches. Here, we present and characterize a chip-based broadband microwave variable coupler, tunable over 4-8GHz with over 1.5GHz instantaneous bandwidth, based on the superconducting quantum interference device with two parallel Josephson junctions. The coupler is dissipation-free and features large on-off ratios in excess of 40dB, and the coupling can be changed in about 10ns. The simple design presented here can be readily integrated with superconducting qubit circuits and can be easily generalized to realize a four- or more port device.
The applicability of a charge balanced electrochromic device to modulate the frequencies in the thermal infrared region is examined in this study. The device consisted of a transparent conductor, WO3 anode, PMMA/LiClO4 electrolyte, V2O5 cathode and transparent conductor. The supporting structure in the device is SnO2 coated glass and the edges are sealed with epoxy to reduce moisture absorption. The performance evaluation comprised of cyclic voltammetric measurements and determination of transmittance at various wavelengths. The device was subjected to anodic and cathodic polarization by sweeping the potential at a rate of 10 mV/sec from -0.8V to 1.8V. The current versus voltage profile indicated no reaction between -0.5 and +0.5 V. The device is colored green at 1.8V with a transmittance of 5% at a wavelength, lambda=900 nm and colorless at -0.8V with a transmittance of 74% at lambda=500 nm. The optical modulation is limited to 400-1500 nm and there is no activity in the thermal infrared. The switching time is 75 seconds for transmittance to decrease from 74% to 50%. The device yielded reproducible values for transmittance when cycled between colored and bleached states by application of 1.8V and -0.8V, respectively.
The applicability of a charge balanced electrochromic device to modulate the frequencies in the thermal infra red region is examined in this study. The device consisted of a transparent conductor, WO3 anode, PMMA/LiClO4, electrolyte, V2O5, cathode and transparent conductor. The supporting structure in the device is SnO2 coated glass and the edges are sealed with epoxy to reduce moisture absorption. The performance evaluation comprised of cyclic voltammetric measurements and determination of transmittance at various wavelengths. The device was subjected to anodic and cathodic polarization by sweeping the potential at a rate of 10 mV/sec from -0.8 V to 1.8 V. The current versus voltage profile indicated no reaction between -0.5 and +0.5 V. The device is colored green at 1.8 V with a transmittance of 5% at a wavelength, lambda = 900 nm and colorless at -0.8 V with a transmittance of 74% at X = 500 nm. The optical modulation is limited to 400-1500 nm and there is no activity in the thermal infrared. The switching time is 75 seconds for transmittance to decrease from 74% to 50%. The device yielded reproducible values for transmittance when cycled between colored and bleached states by application of 1.8 V and -0.8 V, respectively.
Abstract Understanding water behavior in confined volumes is important in applications ranging from water purification to healthcare devices. Especially relevant are wetting and dewetting phenomena which can be switched by external stimuli, such as light and electric fields. Here, these behaviors are exploited for electrochemical processing by voltage‐directed ion transport in nanochannels contained within nanopore arrays in which each nanopore presents three electrodes. The top and middle electrodes (TE and ME) are in direct contact with the nanopore volume, but the bottom electrode (BE) is buried beneath a 70 nm silicon nitride (SiN x ) insulating layer. Electrochemical transistor operation is realized when small, defect‐mediated channels are opened in the SiN x . These defect channels exhibit voltage‐driven wetting that mediates the mass transport of redox species to/from the BE. When BE is held at a potential maintaining the defect channels in the wetted state, setting the potential of ME at either positive or negative overpotential results in strong electrochemical rectification with rectification factors up to 440. By directing the voltage‐induced electrowetting of defect channels, these three‐electrode nanopore structures can achieve precise gating and ion/molecule separation, and, as such, may be useful for applications such as water purification and drug delivery.