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DOE OSTI2019

Fabrication of Nickel Oxide Nanopillar Arrays on Flexible Electrodes for Highly Efficient Perovskite Solar Cells

Semiconductor nanomaterials with controlled morphologies and architectures are of critical importance for high-performance optoelectronic devices. However, the fabrication of such nanomaterials on polymer-based flexible electrodes is particularly challenging due to degradation of the flexible electrodes at a high temperature. In this paper, we report the fabrication of nickel oxide nanopillar arrays (NiO x NaPAs) on a flexible electrode by vapor deposition, which enables highly efficient perovskite solar cells (PSCs). The NiO x NaPAs exhibit an enhanced light transmittance for light harvesting, prohibit exciton recombination, promote irradiation-generated hole transport and collection, and facilitate the formation of large perovskite grains. These advantageous features result in a high efficiency of 20% and 17% for the rigid and flexible PSCs, respectively. Additionally, the NaPAs show no cracking after 500 times of bending, consistent with the mechanic simulation results. Lastly, this robust fabrication opens a new opportunity for the fabrication of a large area of high-performance flexible optoelectronic devices.

14 SOLAR ENERGY↗

DOE OSTI2015

A Processable Shape Memory Polymer System for Biomedical Applications

Polyurethane shape memory polymers (SMPs) with tunable thermomechanical properties and advanced processing capabilities are synthesized, characterized, and implemented in the design of a microactuator medical device prototype. The ability to manipulate glass transition temperature ( T g ) and crosslink density in low-molecular weight aliphatic thermoplastic polyurethane SMPs is demonstrated using a synthetic approach that employs UV catalyzed thiol-ene “click” reactions to achieve postpolymerization crosslinking. Polyurethanes containing varying C=C functionalization are synthesized, solution blended with polythiol crosslinking agents and photoinitiator and subjected to UV irradiation, and the effects of number of synthetic parameters on crosslink density are reported. Thermomechanical properties are highly tunable, including glass transitions tailorable between 30 and 105 °C and rubbery moduli tailorable between 0.4 and 20 MPa. This new SMP system exhibits high toughness for many formulations, especially in the case of low crosslink density materials, for which toughness exceeds 90 MJ m –3 at select straining temperatures. To demonstrate the advanced processing capability and synthetic versatility of this new SMP system, a laser-actuated SMP microgripper device for minimally invasive delivery of endovascular devices is fabricated, shown to exhibit an average gripping force of 1.43 ± 0.37 N and successfully deployed in an in vitro experimental setup under simulated physiological conditions.

42 ENGINEERING↗

DOE OSTI2016

SU-G-JeP2-11: Polymer Gels as 3D QA Devices in Magnetic Resonance-Guided Radiation Therapy

Purpose: To demonstrate the potential of polymer gels to serve as 3D QA devices in MR-guided radiotherapy. Methods: Custom-designed polymer gel dosimeters (MGS Research, Madison, CT) were centered on the penumbras of a radiation field, parallel to the magnetic field lines inside a 1.5 T MR scanner integrated with a 7 MV linac (MR-Linac). 15 Gy were delivered perpendicular to the magnetic field. Coronal MR images were acquired with a 2D balanced-Fast Field Echo (b-FFE) sequence in real-time during irradiation and with a 2D spin echo sequence at different times after irradiation. Signal intensities (SI) were measured inside and outside the radiation field on b-FFE images obtained during irradiation. Spin-spin relaxation rate (R2) maps were calculated from images after irradiation and penumbra widths were calculated from these maps. Results: A difference in SI between areas of the dosimeter inside and outside of the radiation field could be measured immediately after the beam was turned on. The difference in SI increased throughout the duration of the exposure. R2 values from immediately after irradiation were 83% of those measured 24h post-irradiation. At 1h after irradiation, the R2 values were 87% of those at 24h indicating that polymerization of the gel was still ongoing. At 24h postirradiation the width of the 80/20 penumbra on the left field edge measured 6.5 mm and on the right 5.6 mm. Conclusion: The MR-Linac allows for MR imaging during treatment and measurements of 3D dose distributions with steep dose gradients without having to transfer dosimeters for read-out. The results showed promise for polymer gels as relative 3D QA devices to verify radiation treatment plans delivered by an MR-Linac. To our knowledge, this was the first time that polymer gels were used for real-time image acquisition. Further investigations into the application of polymer gel dosimetry on MR-Linac are ongoing.

60 APPLIED LIFE SCIENCES↗

DOE OSTI2022

Switching charge states in quasi-2D molecular conductors

Abstract 2D molecular entities build next-generation electronic devices, where abundant elements of organic molecules are attractive due to the modern synthetic and stimuli control through chemical, conformational, and electronic modifications in electronics. Despite its promising potential, the insufficient control over charge states and electronic stabilities must be overcome in molecular electronic devices. Here, we show the reversible switching of modulated charge states in an exfoliatable 2D-layered molecular conductor based on bis(ethylenedithio)tetrathiafulvalene molecular dimers. The multiple stimuli application of cooling rate, current, voltage, and laser irradiation in a concurrent manner facilitates the controllable manipulation of charge crystal, glass, liquid, and metal phases. The four orders of magnitude switching of electric resistance are triggered by stimuli-responsive charge distribution among molecular dimers. The tunable charge transport in 2D molecular conductors reveals the kinetic process of charge configurations under stimuli, promising to add electric functions in molecular circuitry.

Huang, Yulong (ORCID:0000000296160134)↗

DOE OSTI2018

Senescence chips for ultrahigh-throughput isolation and removal of senescent cells

Cellular senescence plays an important role in organismal aging and age-related diseases. However, it is challenging to isolate low numbers of senescent cells from small volumes of biofluids for downstream analysis. Furthermore, there is no technology that could selectively remove senescent cells in a high-throughput manner. In this work, we developed a novel microfluidic chip platform, termed senescence chip, for ultrahigh-throughput isolation and removal of senescent cells. The core component of our senescence chip is a slanted and tunable 3D micropillar array with a variety of shutters in the vertical direction for rapid cell sieving, taking advantage of the characteristic cell size increase during cellular senescence. The 3D configuration achieves high throughput, high recovery rate, and device robustness with minimum clogging. We demonstrated proof-of-principle applications in isolation and enumeration of senescent mesenchymal stem cells (MSCs) from undiluted human whole blood, and senescent cells from mouse bone marrow after total body irradiation, with the single cell resolution. After scale-up to a multilayer and multichannel structure, our senescence chip achieved ultrahigh-throughput removal of senescent cells from human whole blood with an efficiency of over 70% at a flow rate of 300 ml/hr. Sensitivity and specificity of our senescence chips could be augmented with implementation of multiscale size separation, and identification of background white blood cells using their cell surface markers such as CD45. With the advantages of high throughput, robustness, and simplicity, our senescence chips may find wide applications and contribute to diagnosis and therapeutic targeting of cellular senescence.

59 BASIC BIOLOGICAL SCIENCES↗

DOE OSTI2014

SU-E-T-442: Sensitivity of Quality Assurance Tools to Delivery Errors On a Magnetic Resonance-Imaging Guided Radiation Therapy (MR-IGRT) System

Purpose: To test the sensitivity of the quality assurance (QA) tools actively used on a clinical MR-IGRT system for potential delivery errors. Methods: Patient-specific QA procedures have been implemented for a commercially available Cobalt-60 MR-IGRT system. The QA tools utilized were a MR-compatible cylindrical diode-array detector (ArcCHECK) with a custom insert which positions an ionization chamber (Exradin A18) in the middle of the device, as well as an in-house treatment delivery verification program. These tools were tested to investigate their sensitivity to delivery errors. For the ArcCHECK and ion chamber, a baseline was established with a static field irradiation to a known dose. Variations of the baseline were investigated which included rotated gantry, altered field size, directional shifts, and different delivery time. In addition, similar variations were tested with the automated delivery verification program that compared the treatment parameters in the machine delivery logs to the ones in the plan. To test the software, a 3-field conformal plan was generated as the baseline. Results: ArcCHECK noted at least a 13% decrease in passing rate from baseline in the following scenarios: gantry rotation of 1 degree from plan, 5mm change in field size, 2mm lateral shift, and delivery time decrease. Ion chamber measurements remained consistent for these variations except for the 5 second decrease in delivery time scenario which resulted in an 8% difference from baseline. The delivery verification software was able to detect and report the simulated errors such as when the gantry was rotated by 0.6 degrees, the beam weighting was changed by a percent, a single multileaf collimator was moved by 1cm, and the dose was changed from 2 to 1.8Gy. Conclusion: The results show that the current tools used for patient specific QA are capable of detecting small errors in RT delivery with presence of magnetic field.

60 APPLIED LIFE SCIENCES↗

DOE OSTI2016

SU-F-T-263: Dosimetric Characteristics of the Cine Acquisition Mode of An A-Si EPID

Purpose: To investigate the dosimetric characteristics of Varian a-Si-500 electronic portal imaging device (EPID) operated in cine mode particularly considering linearity with delivered dose, dose rate, field size, phantom thickness, MLC speed and common IMRT fields. Methods: The EPID that attached to a Varian Clinac 21iX linear accelerator, was irradiated with 6 and 18 MV using 600 MU/min. Image acquisition is controlled by the IAS3 software, Trigger delay was 6 ms, BeamOnDelay and FrameStartDelay were zero. Different frame rates were utilized. Cine mode response was calculated using MATLAB as summation of mean pixel values in a region of interest of the acquired images. The performance of cine mode was compared to integrated mode and dose measurements in water using CC13 ionization chamber. Results: Figure1 illustrates that cine mode has nonlinear response for small MU, when delivering 10 MU was about 0.5 and 0.64 for 6 and 18 MV respectively. This is because the missing acquired images that were calculated around four images missing in each delivery. With the increase MU the response became linear and comparable with integrated mode and ionization chamber within 2%. Figure 2 shows that cine mode has comparable response with integrated mode and ionization chamber within 2% with changing dose rate for 10 MU delivered. This indicates that the dose rate change has no effect on nonlinearity of cine mode response. Except nonlinearity, cine mode is well matched to integrated mode response within 2% for field size, phantom thickness, MLC speed dependences. Conclusion: Cine mode has similar dosimetric characteristics to integrated mode with open and IMRT fields, and the main limitation with cine mode is missing images. Therefore, the calibration of EPID images with this mode should be run with large MU, and when IMRT verification field has low MU, the correction for missing images are required.

60 APPLIED LIFE SCIENCES↗

NASA NTRS2022

Single-Event Effect Testing of the PNI RM3100 Magnetometer for Space Applications

The results of a destructive single-event effect susceptibility radiation test of the PNI RM3100 magnetometer sensor, specifically the MagI 2 C ASIC (application-specific integrated circuit) on the sensor board are presented. The sensor is a low-resource commercial off-the-shelf (COTS) magneto-inductive magnetometer. The device was monitored for destructive events and functional interruptions during exposure to a heavy ion beam at the Lawrence Berkeley National Laboratory's 88′′ Cyclotron. The RM3100 did not experience any destructive single-event effects when irradiated to a total fluence of 1.4 × 10 7 cm −2 at an effective linear energy transfer (LET) of 76.7 MeV cm 2 mg −1 while operated at nominal voltage (3.3 V) and elevated temperature (85 ∘C). When these results are combined with previous total ionizing dose tests showing no failures up to 150 kRad (Si), we conclude that the PNI RM3100 is extremely radiation tolerant and can be used in a variety of space environments.

Mark B. Moldwin↗

DOE OSTI2024

Introducing the Baseline Performance Reference (BPR) for Irradiance in PV System Applications

Photovoltaic (PV) reference cells, modules, and arrays respond in a complex manner to the many variables that define their operating environment. PV reference cells for irradiance measurement have similarities but also differences to operational PV modules. For this reason, a more neutral and a well-defined generic PV reference cell is needed, whose characteristics are close enough to most operational PV devices to make stable performance indicators possible but whose characteristics are not necessarily identical to any of them. This poster describes a new well-defined reference quantity for outdoor PV measurements, called the baseline performance reference (BPR).

baseline performance reference↗

DOE OSTI2017

Selective Shielding Bone Marrow: An Approach to Create Personal Protective Equipment for Gamma Radiation

Many casualties of the Hiroshima and Nagasaki atomic bombs, and many of the firefighters who first responded to the Chernobyl nuclear power plant accident, became ill with acute radiation syndrome (ARS). Most of the people who do not recover from ARS will die within a few weeks to a few months after exposure, with the primary cause of death being the destruction of the body's bone marrow (BM). This is exemplified by the Chernobyl firefighters, the majority of whom received whole body doses between 0.8 and 10 Gy, and the United Nations Scientific Committee on the Effects of Atomic Radiation (UNSCEAR) final report on the disaster concluded that the underlying cause of death of all 28 firefighters who succumbed to ARS was from bone marrow failure. BM is comprised of hematopoietic stem cells (HSCs) which are responsible for the constant renewal of blood cells. Due to their high rate of proliferation, HSCs are especially vulnerable to ionizing radiation, but are endowed with remarkable regenerative potential. Owing to their central role in blood production, lethal irradiation of HSCs leads to death from severe anemia, infection and internal bleeding. This relationship between high doses of radiation and HSC apoptosis has led to the use of HSC transplantation as a life-saving intervention in cases of acute exposure. This is demonstrable in medical practice, where thousands of individuals have undergone supra-lethal Total Body Irradiation (TBI) for purposes of cancer therapy, and were rescued by well-matched BM transplantation. Indeed, life-threatening damage may be reversed by BM transplantation in individuals receiving doses of radiation of up to 10 Gy. At doses > 10 Gy, damage to gastrointestinal (GI) tissue may become a limiting factor in survival. Remarkably, in the common procedure of BM transplantation, the number of HSCs extracted from a single active BM site containing less than 5% of the donor's BM tissue is sufficient to support the complete reconstitution of the HSC compartment in a lethally irradiated recipient. This capacity of BM to expand and replenish is due to the high regenerative potential of the HSCs it harbors. In contrast to mature blood cells, which are dispersed throughout the body, HSCs are confined to the bones, allowing for effective targeted shielding. This has been confirmed in several animal models, where sparing the HSC-rich area of a subject receiving otherwise full-body irradiation is sufficient to support hematopoietic functions and allow survival. Approximately 48% of the human body's active BM is contained within the lumbar vertebrae and the pelvic region. This high concentration of BM makes the pelvic region an ideal area to shield for preventing the serious hematopoietic effects of radiation exposure. Stem-cell rich tissues like active BM are also more sensitive to the stochastic effects (i.e. cancer) of radiation exposure. The high amount of BM in the pelvic region, combined with the presence of the sensitive gastrointestinal system and female gonads in this same area of the body allows for the possibility of significantly reducing stochastic effects of radiation by limiting radiation exposure to this vital area. Thus, shielding this region holds great promise for both acute and protracted exposures. Thus, a specialized radiation shielding device for the protection of active BM concentrations is presented here. This belt-like selective shielding device focuses on the protection of BM that is present in the pelvis and hip bones, protecting the medullary volume from which BM is commonly extracted for transplantation (i.e. the iliac bones) while allowing relatively unhindered movement of the wearer. In order to optimize the use of shielding materials towards the protection of active BM, the shielding uniquely brings into account the natural shielding properties of human tissue, with thickness being inversely related to the thickness and radiation attenuation of the underlying tissue at each point surrounding the area being protected. The findings resulting from both experimental and simulation testing of this selective shielding device are presented here.

61 RADIATION PROTECTION AND DOSIMETRY↗

DOE OSTI2021

Getting their days in the sun

Although metal halide perovskite solar cells are extensively investigated in the lab their performance and degradation in real-world outdoor conditions are still poorly understood. Now, researchers propose a method to analyse field data to identify how and why the outdoor device performance changes over time.

14 SOLAR ENERGY↗

DOE OSTI2017

From Binary to Ternary: Improving the External Quantum Efficiency of Small‐Molecule Acceptor‐Based Polymer Solar Cells with a Minute Amount of Fullerene Sensitization

Ternary blend is proved to be a potential contender for achieving high efficiency in organic photovoltaics, which can apparently strengthen the absorption of active layer so as to better harvest light irradiation. Much of the previous work in ternary polymer solar cells focuses on broadening the absorption spectrum; however, a new insight is brought to study the third component, which in tiny amounts influents the small‐molecule acceptor‐based device performance. Without contributing to complementing the absorption, a minute amount of fullerene derivative, Bis‐PC 70 BM, can effectively play an impressive role as sensitizer in enhancing the external quantum efficiency of the host binary blend, especially for polymeric donor. Detailed investigations reveal that the minute addition of Bis‐PC 70 BM can realize morphology modification as well as facilitate electron transfer from polymeric donor to small molecule acceptor via cascade energy level modulation, and therefore lead to an improvement in device efficiency.

Chen, Yu↗

DOE OSTI2026

Material-dependent photon ionizing radiation effects in Si and GaAs PIN diodes: A numerical investigation

We present a finite-element drift-diffusion-Poisson model in the Multiphysics Object-Oriented Simulation Environment (MOOSE) framework to compare the radiation response of silicon (Si) and gallium arsenide (GaAs) PIN diodes under high-energy photon irradiation. The model solves coupled carrier continuity and Poisson’s equations with Shockley-Read-Hall recombination, and is verified against standard analytical J-V behavior. Using a simplified 1D geometry with ideal Ohmic contacts, we quantify device response under forward and reverse bias with a 100 MeV photon flux. Under forward bias, Si exhibits markedly greater radiation sensitivity than GaAs, including larger increases in current density, stronger local field and carrier-product perturbations, and higher recombination. Under reverse bias, GaAs shows larger radiation-induced photocurrent and broader current-density peaks near junctions, indicating an advantage for photodetection. Integrated steady-state recombination is consistently higher in Si across voltages. Under periodic photon pulses, GaAs produces higher-amplitude photoresponse and settles more rapidly than Si. These results highlight material-dependent trade-offs for radiation-tolerant, high-speed optoelectronics and provide guidance for selecting PIN architectures in aerospace, nuclear, and high-energy physics environments.

36 MATERIALS SCIENCE↗

DOE OSTI2014

The action mechanism of TiO{sub 2}:NaYF{sub 4}:Yb{sup 3+},Tm{sup 3+} cathode buffer layer in highly efficient inverted organic solar cells

We report the fabrication and characteristics of organic solar cells with 6.86% power conversion efficiency (PCE) by doping NaYF{sub 4}:Yb{sup 3+},Tm{sup 3+} into TiO{sub 2} cathode buffer layer. The dependence of devices performance on doping concentration of NaYF{sub 4}:Yb{sup 3+},Tm{sup 3+} is investigated. Results indicate that short-circuit current density (J{sub sc}) has an apparent improvement, leading to an enhancement of 22.7% in PCE for the optimized doping concentration of 0.05 mmol ml{sup −1} compared to the control devices. NaYF{sub 4}:Yb{sup 3+},Tm{sup 3+} nanoparticles (NPs) can play threefold roles, one is that the incident light in visible region can be scattered by NaYF{sub 4} NPs, the second is that solar irradiation in infrared region can be better utilized by Up-conversion effect of Yb{sup 3+} and Tm{sup 3+} ions, the third is that electron transport property in TiO{sub 2} thin film can be greatly improved.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2020

Deep level transient spectroscopy investigation of ultra-wide bandgap ($\bar201$) and ($001$) β -Ga 2 O 3

Here, this work reports on a comprehensive examination of the electrical and thermal properties of vertical Schottky diodes fabricated on ($\bar201$) and ($001$)-oriented samples of β-Ga 2 O 3 . The temperature-dependent current–voltage (I–V) and capacitance–voltage (C–V) data were gathered and analyzed down to 60 K. Deep level transient spectroscopy (DLTS) was used to study bulk and interface defects in the two materials from approx. 325 K down to 60 K. In the bulk ($\bar201$) material, an electron trap was observed at E C -0.46 eV, with a capture cross section of 1.6 x 10 -14 cm 2 and a lambda-corrected maximum trap density of 9.08 x 10 15 cm -3 . These results and others indicate that the electron trap is a strong candidate for the well-known E1 defect in β-Ga 2 O 3 based on recent investigations. Additionally, in the ($\bar201$) material, the smooth modulation typical of interface states is evident at temperatures below 275 K. The ($001$) samples manifested what is likely the E2* electron trap at E C -0.68 eV, with a capture cross section of 1.64 x 10 -15 cm 2 and a lambda-corrected maximum trap density of 8.85 x 10 15 cm -3 . The presence of the E2* defect, in particular, is a contrast to the findings of recent DLTS investigations on β-Ga 2 O 3 , which report that E2* emerged only after low-energy proton irradiation. These results help to further map out the defect signatures found in β-Ga 2 O 3 materials, which are of vital importance in the design and fabrication of future β-Ga 2 O 3 devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2021

Simulation and Modeling of Time-Resolved X-Ray Detector for the Saturn Accelerator

In this work, we present the technology-aided computer design (TCAD) device simulation and modeling of a silicon p-i-n diode for detecting time-dependent X-ray radiation. We show that the simulated forward and reverse breakdown current–voltage characteristics agree well with the measured data under nonradiation environment by only calibrating carrier lifetimes for the forward bias case and avalanche model critical fields for the reverse bias condition. Using the calibrated parameters and other nominal material properties, we simulated the radiation responses of the p-i-n diode and compared with experimental data when the diode was exposed to X-ray radiation at Sandia’s Saturn facility and the Idaho State University (ISU) TriMeV facility. For Saturn’s Gaussian dose-rate pulses, we show three findings from TCAD simulations. First, the simulated photocurrents are in excellent agreement with the measured data for two dose-rate pulses with peak values of 1.16×10 10 and 1.88×10 10 rad(Si)/s. Second, the simulation results of high dose-rate pulses predict increased delayed photocurrents with longer time tails in the diode electrical responses due to excess carrier generation. Third, simulated peak values of diode radiation responses versus peak dose rates at different bias conditions provide useful guidance to determine the dose-rate range that the p-i-n diode can reliably detect in experiment. For TriMeV’s non-Gaussian dose-rate pulse, our simulated diode response is in decent agreement with the measured data without further calibration. We also studied the effects of device geometry, recombination process, and dose-rate enhancement via TCAD simulations to understand the higher measured response in the time after the peak dose-rate radiation for the p-i-n diode exposed to TriMeV irradiation.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

NASA NTRS2013

Charge Yield at Low Electric Fields: Considerations for Bipolar Integrated Circuits

A significant reduction in total dose damage is observed when bipolar integrated circuits are irradiated at low temperature. This can be partially explained by the Onsager theory of recombination, which predicts a strong temperature dependence for charge yield under low-field conditions. Reduced damage occurs for biased as well as unbiased devices because the weak fringing field in thick bipolar oxides only affects charge yield near the Si/SiO2 interface, a relatively small fraction of the total oxide thickness. Lowering the temperature of bipolar ICs - either continuously, or for time periods when they are exposed to high radiation levels - provides an additional degree of freedom to improve total dose performance of bipolar circuits, particularly in space applications.

ionizing radiation↗

DOE OSTI2015

KJRR FUEL (U-7MO) QUALIFICATION PLAN AND ITS STATUS

In order to cope with global shortage of Mo-99 supplies and with growing demand of neutron transmutation doping, KJRR construction plan has been launched since April 2012 to provide self-sufficiency of domestic RI demand, and to extend Si doping capacity for power device market growth. Through comprehensive surveillance of the fuel’s in-reactor behavior, KAERI has selected the fuel meat of U-7%Mo/Al-5%Si since Molybdenum contents in fuel more than 6% showed a stable and good irradiation behavior in-reactor. As part of efforts for fuel qualification of the KJRR fuel, 16 mini-plates irradiation program and PIE designated as HAMPs (HAnaro Mini-Plate Irradiations) are planned to supplement the irradiation and PIE data to be obtained from an LTA irradiation and PIE at the ATR. This paper focuses on the plan and current on-going status of KJRR U-Mo fuel qualification.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗