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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 829 records · Page 46
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

A 100 micro Kelvin bolometer system for SIRTF

Progress toward a prototype of 100 mK bolometric detection system for the Space Infrared Telescope Facility (SIRTF) is described. Two adiabatic demagnetization refrigerators (ADR's) were constructed and used to investigate the capabilities necessary for orbital operation. The first, a laboratory ADR, demonstrated a hold time at 0.1 K of over 12 hours, with temperature stability approx. 3 micro-K RMS achieved by controlling the magnetic field. A durable salt pill and an efficient support system have been demonstrated. A second ADR, the SIRTF flight prototype, has been built and will be flown on a balloon. Techniques for magnetic shielding, low heat leak current leads, and a mechanical heat switch are being developed in this ADR. Plans for construction of 100 mK bolometers are discussed. Three important cosmological investigations which will be carried out by these longest wavelength SIRTF detectors are described.

Bernstein, G. M.↗
NASA NTRS1991

Demagnetization effects on forward and reverse thresholds of M-R memory elements

A refinement in the way hard-axis demagnetizing effects are treated in multilayer M-R memory elements brings experimental and calculated results into agreement for both the forward and reverse switching thresholds. In the improved model, the nonuniform rotation of the magnetization in the elements because of edge pinning is taken into account. The demagnetizing fields are treated as corrections to the hard-axis word field rather than an addition to the anisotropy constant.

Pohm, A. V.↗
NASA NTRS2000

Electromagnetic Propulsion

The design and development of an Electromagnetic Propulsion is discussed. Specific Electromagnetic Propulsion Topics discussed include: (1) Technology for Pulse Inductive Thruster (PIT), to design, develop, and test of a multirepetition rate pulsed inductive thruster, Solid-State Switch Technology, and Pulse Driver Network and Architecture; (2) Flight Weight Magnet Survey, to determine/develop light weight high performance magnetic materials for potential application Advanced Space Flight Systems as these systems develop; and (3) Magnetic Flux Compression, to enable rapid/robust/reliable omni-planetary space transportation within realistic development and operational costs constraints.

Schafer, Charles↗
DOE OSTI2021

Transformer system

A flexible transformer system includes conductive windings extending around a magnetic core of a transformer phase and impedance-varying windings extending around the magnetic core of the transformer phase. The conductive windings and the impedance-varying windings are configured to conduct electric current around the magnetic core of the transformer phase. The system includes an impedance switch coupled with the impedance-varying windings and with the conductive windings. The impedance switch is configured to change an impedance of the system by changing which impedance-varying winding of the impedance-varying windings is conductively coupled with the conductive windings and which impedance-varying winding of the impedance-varying windings is disconnected from the conductive windings.

Premerlani, William James↗
DOE OSTI2018

Spin transport and spin torque in antiferromagnetic devices

Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets which represent the more common form of magnetically ordered materials, have found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstration of the electrical switching and detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated from antiferromagnets can be inherently multilevel, which could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of ferromagnetic and semiconductor memory technologies. Here we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum mechanical origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Phase transitions and potential ferroelectricity in noncentrosymmetric KNaNbOF 5

Increasing the number of known ferroelectrics requires expanding the chemical design space and mechanisms producing ferroelectricity. To that end, we examine the displacive, noncentrosymmetric-to-centrosymmetric phase transition in the oxyfluoride KNaNbOF 5 using ab initio calculations and Landau theory. Here we predict an intermediate Pnma phase occurs in the transition from the known low- and high-temperature phases, Pna2 1 and Cmcm, respectively, which we subsequently confirm using high-resolution and in situ 19 F magic-angle spinning nuclear magnetic resonance. Using the intermediate structure, we then calculate the monodomain polarization switching barrier in KNaNbOF 5 to be ~ 93 meV per formula unit, comparable to existing ferroelectrics. The reversal of the polarization is due to uncompensated antipolar displacements of oxygen and fluorine and does not require oxygen and fluorine site exchange as in other nonswitchable heteroanionic materials, which makes KNaNbOF 5 a viable oxyfluoride for a switchable electric polarization.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Light-stimulated cargo release from a core–shell structured nanocomposite for site-specific delivery

This paper reported a core–shell structured site-specific delivery system with a light switch triggered by low energy light (λ=510 nm). Its core was composed of supermagnetic Fe{sub 3}O{sub 4} nanoparticles for magnetic guiding and targeting. Its outer shell consisted of mesoporous silica molecular sieve MCM-41 which offered highly ordered hexagonal tunnels for cargo capacity. A light switch N1-(4aH-cyclopenta[1,2-b:5,4-b′]dipyridin-5(5aH)-ylidene)benzene-1, 4-diamine (CBD) was covalently grafted into these hexagonal tunnels, serving as light stimuli acceptor with loading content of 1.1 μM/g. This composite was fully characterized and confirmed by SEM, TEM, XRD patterns, N{sub 2} adsorption/desorption, thermogravimetric analysis, IR, UV–vis absorption and emission spectra. Experimental data suggested that this composite had a core as wide as 150 nm and could be magnetically guided to specific sites. Its hexagonal tunnels were as long as 180 nm. Upon light stimuli of “on” and “off” states, controllable release was observed with short release time of ~900 s (90% capacity). - Graphical abstract: A core–shell structured site-specific delivery system with a light switch triggered by yellow light was constructed. Controllable release was observed with short release time of ~900 s (90% capacity). - Highlights: • A core–shell structured site-specific delivery system was constructed. • It consisted of Fe{sub 3}O{sub 4} core and MCM-41 shell grafted with light switch. • This delivery system was triggered by low energy light. • Controllable release was observed with short release time of ~900 s.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Planar Hall effect in Y{sub 3}Fe{sub 5}O{sub 12}/IrMn films

The planar Hall effect of IrMn on an yttrium iron garnet (YIG = Y{sub 3}Fe{sub 5}O{sub 12}) was measured in the magnetic field rotating in the film plane. The magnetic field angular dependence of planar Hall resistance (PHR) was observed in YIG/IrMn bilayer at different temperatures, while the Gd{sub 3}Ga{sub 5}O{sub 12}/IrMn film shows constant PHR for different magnetic field angles at both 10 K and 300 K. This provides evidence that IrMn has interfacial spins which can be led by ferrimagnetic layer in YIG/IrMn structure. A hysteresis can be observed in PHR-magnetic field angle loop of YIG/IrMn film at 10 K, indicative of the irreversible switching of IrMn interfacial spins at low temperature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Multichannel microwave interferometer with an antenna switching system for electron density measurement in a laboratory plasma experiment

This study presents a simple and powerful technique for multichannel measurements of the density profile in laboratory plasmas by microwave interferometry. This technique uses electromechanical microwave switches to temporally switch the connection between multiple receiver antennas and one phase-detection circuit. Using this method, the phase information detected at different positions is rearranged into a time series that can be acquired from a minimum number of data acquisition channels (e.g., two channels in the case of quadrature detection). Our successfully developed multichannel microwave interferometer that uses the antenna switching method was applied to measure the radial electron density profiles in a magnetized plasma experiment. The advantage of the proposed method is its compactness and scalability to multidimensional measurement systems at low cost.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Programming correlated magnetic states with gate-controlled moiré geometry

The ability to control the underlying lattice geometry of a system may enable transitions between emergent quantum ground states. We report in situ gate switching between honeycomb and triangular lattice geometries of an electron many-body Hamiltonian in rhombohedral (R)–stacked molybdenum ditelluride (MoTe 2 ) moiré bilayers, resulting in switchable magnetic exchange interactions. At zero electric field, we observed a correlated ferromagnetic insulator near one hole per moiré unit cell with a widely tunable Curie temperature up to 14 K. Applying an electric field switched the system into a half-filled triangular lattice with antiferromagnetic interactions; further doping this layer-polarized superlattice tuned the antiferromagnetic exchange interaction back to ferromagnetic. Our work demonstrates R-stacked MoTe 2 moirés to be a laboratory for engineering correlated states with nontrivial topology.

Science & Technology - Other Topics↗
DOE OSTI2016

Effect of annealing on exchange stiffness of ultrathin CoFeB film with perpendicular magnetic anisotropy

The effect of annealing on the exchange stiffness of ultrathin CoFeB films with perpendicular magnetic anisotropy was investigated through the observation of magnetic domain structures by magneto-optic Kerr-effect microscopy. A significant reduction of the exchange stiffness after an annealing process was observed, which is in striking contrast to a previous report that studied thick CoFeB films with in-plane magnetic anisotropy. Our results suggest that interdiffusion of non-magnetic atoms from the adjacent layer into CoFeB layer reduces the exchange stiffness, which explains the difference between the annealing effect on ultrathin and the thick CoFeB films. Thus, it is critical to prevent annealing-induced interdiffusion in order to suppress undesired sub-volume switching that degrades thermal stability of a free-layer in spin-transfer torque magnetic random access memory.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Magnetization reversal driven by a spin torque oscillator

Magnetization reversal of a magnetic free layer under spin transfer torque (STT) effect from a magnetic hard layer with a fixed magnetization direction and an oscillating layer is investigated. By including STT from the oscillating layer with in-plane anisotropy and orthogonal polarizer, magnetization-time dependence of free layer is determined. The results show that the frequency and amplitude of oscillations can be varied by adjusting the current density and magnetic properties. For an optimal oscillation frequency (f{sub opt}), a reduction of the switching time (t{sub 0}) of the free layer is observed. Both f{sub opt} and t{sub 0} increase with the anisotropy field of the free layer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Tunable quantum anomalous Hall effects in ferromagnetic van der Waals heterostructures

ABSTRACT The quantum anomalous Hall effect (QAHE) has unique advantages in topotronic applications, but it is still challenging to realize the QAHE with tunable magnetic and topological properties for building functional devices. Through systematic first-principles calculations, we predict that the in-plane magnetization induced QAHE with Chern numbers C = ±1 and the out-of-plane magnetization induced QAHE with high Chern numbers C = ±3 can be realized in a single material candidate, which is composed of van der Waals (vdW) coupled Bi and MnBi2Te4 monolayers. The switching between different phases of QAHE can be controlled in multiple ways, such as applying strain or (weak) magnetic field or twisting the vdW materials. The prediction of an experimentally available material system hosting robust, highly tunable QAHE will stimulate great research interest in the field. Our work opens a new avenue for the realization of tunable QAHE and provides a practical material platform for the development of topological electronics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

The Spin Wave Gap and Switching Field in Thin Films with In-Plane Anisotropy

In this paper, we have calculated the spin wave gap and the angular dependence of magnetization reversal in a single-layer thin magnetic film that includes the strong perpendicular magnetic anisotropy and in-plane anisotropy. The film is assumed to be under the influence of the out-of-plane direction of the applied magnetic field at zero temperature. Using the quantum model, it is shown that the calculated equations present a nonzero spin wave gap at zero magnetic field which is strongly affected by anisotropies. The effects of the in-plane anisotropy and the role of the applied field were examined. We also discussed a simple theoretical model for the angular variation of switching field by using a quasi-classical argument. We used some constants in connection with experimental data which are reported for chromium telluride thin films grown by molecular beam epitaxy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Switchable geometric frustration in an artificial-spin-ice–superconductor heterosystem

Geometric frustration emerges when local interaction energies in an ordered lattice structure cannot be simultaneously minimized, resulting in a large number of degenerate states. The numerous degenerate configurations may lead to practical applications in microelectronics(1), such as data storage, memory and logic(2). However, it is difficult to achieve very high degeneracy, especially in a two-dimensional system(3,4). Here, we showcase in situ controllable geometric frustration with high degeneracy in a two-dimensional flux-quantum system. We create this in a superconducting thin film placed underneath a reconfigurable artificial-spin-ice structure(5). The tunable magnetic charges in the artificial-spin-ice strongly interact with the flux quanta in the superconductor, enabling switching between frustrated and crystallized flux quanta states. The different states have measurable effects on the superconducting critical current profile, which can be reconfigured by precise selection of the spin-ice magnetic state through the application of an external magnetic field. We demonstrate the applicability of these effects by realizing a reprogrammable flux quanta diode. The tailoring of the energy landscape of interacting 'particles' using artificial-spin-ices provides a new paradigm for the design of geometric frustration, which could illuminate a path to control new functionalities in other material systems, such as magnetic skyrmions(6), electrons and holes in two-dimensional materials(7,8), and topological insulators(9), as well as colloids in soft materials(10-13).

Wang, Yong-Lei (ORCID:0000000303917757)↗
DOE OSTI2017

Multi-region relaxed magnetohydrodynamics in plasmas with slowly changing boundaries -- Resonant response of a plasma slab

The adiabatic limit of a recently proposed dynamical extension of Taylor relaxation, multi-region relaxed magnetohydrodynamics (MRxMHD), is summarized, with special attention to the appropriate definition of a relative magnetic helicity. The formalism is illustrated using a simple two-region, sheared-magnetic-field model similar to the Hahm-Kulsrud-Taylor (HKT) rippled-boundary slab model. In MRxMHD, a linear Grad-Shafranov equation applies, even at finite ripple amplitude. The adiabatic switching on of boundary ripple excites a shielding current sheet opposing reconnection at a resonant surface. The perturbed magnetic field as a function of ripple amplitude is calculated by invoking the conservation of magnetic helicity in the two regions separated by the current sheet. Here, at low ripple amplitude, "half islands" appear on each side of the current sheet, locking the rotational transform at the resonant value. Beyond a critical amplitude, these islands disappear and the rotational transform develops a discontinuity across the current sheet. Published by AIP Publishing.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2013

Acoustically assisted spin-transfer-torque switching of nanomagnets: An energy-efficient hybrid writing scheme for non-volatile memory

We show that the energy dissipated to write bits in spin-transfer-torque random access memory can be reduced by an order of magnitude if a surface acoustic wave (SAW) is launched underneath the magneto-tunneling junctions (MTJs) storing the bits. The SAW-generated strain rotates the magnetization of every MTJs' soft magnet from the easy towards the hard axis, whereupon passage of a small spin-polarized current through a target MTJ selectively switches it to the desired state with > 99.99% probability at room temperature, thereby writing the bit. The other MTJs return to their original states at the completion of the SAW cycle.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Metal-to-insulator switching in quantum anomalous Hall states

After decades of searching for the dissipationless transport in the absence of any external magnetic field, quantum anomalous Hall effect (QAHE) was recently achieved in magnetic topological insulator films. However, the universal phase diagram of QAHE and its relation with quantum Hall effect (QHE) remain to be investigated. Here, we report the experimental observation of the giant longitudinal resistance peak and zero Hall conductance plateau at the coercive field in the six quintuple-layer (Cr 0.12 Bi 0.26 Sb 0.62 ) 2 Te 3 film, and demonstrate the metal-to-insulator switching between two opposite QAHE plateau states up to 0.3 K. Moreover, the universal QAHE phase diagram is confirmed through the angle-dependent measurements. Our results address that the quantum phase transitions in both QAHE and QHE regimes are in the same universality class, yet the microscopic details are different. Additionally, the realization of the QAHE insulating state unveils new ways to explore quantum phase-related physics and applications.

36 MATERIALS SCIENCE↗