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Temperature Dependence of Charge Distributions and Carrier Mobility in an Undoped Si/SiGe Heterostructure
Capacitance–voltage (C–V ) characteristics and carrier transport properties of 2-D electron gases (2DEGs) in an undoped Si/SiGe heterostructure at T = 4 – 35 K are presented here. In this work, two capacitance plateaus due to density saturation of the 2DEG in the buried Si quantum well (QW) are observed and explained by a model of surface tunneling. The peak mobility at 4 K is 4.1 × 10 5 cm 2 /V·s and enhanced by a factor of 1.97 at an even lower carrier density compared to the saturated carrier density, which is attributed to the effect of remote carrier screening. At T = 35 K, the mobility enhancement with a factor of 1.35 is still observed, which suggests the surface tunneling is still dominant.
A Custom Low-Noise Silicon Photodiode Detector Designed for Use With X-Ray Capillary Optics
We present the first results of a custom low-noise silicon photodiode detector designed for use with X-ray capillary optics. This system is intended to perform as a smaller, lighter, and low-powered alternative to currently existing X-ray telescope technologies. The detector has an active area with a diameter of 100 μm, and its small size leads to a low capacitance of well under 1 pF and a leakage current of 1 pA or less at the depletion voltage. We tested the detector with both a discrete preamp and an ultralow-noise front-end application-specific integrated circuit (ASIC). The front-end ASIC, developed at Brookhaven National Laboratory, was designed for low-capacitance detectors but had not been previously tested with a detector. Here, we discuss the detector design, the experimental setup, and the resulting detector performance. Using radioactive laboratory sources, we measure a full-width at half-maximum (FWHM) of 211 ± 8 eV at 5.9 keV with the ASIC and are able to set the threshold as low as 0.6 keV.
Analysis of Diode Reverse Recovery Effect on ZVS Condition for GaN-Based LLC Resonant Converter
LLC resonant converter can achieve zero voltage switching (ZVS) for primary-side devices and zero current switching (ZCS) for secondary-side rectifiers. However, the reverse recovery and junction capacitance (C j ) of secondary-side diode critically affect the ZVS condition of primary-side switches. The effect of C j has been discussed in literature, but not the reverse recovery. In this paper, the reverse recovery charge (Q rr ) is converted to an equivalent capacitance (C rr_eq ) for the study of primary-side ZVS performance. An accurate model during deadtime is derived and further applied to characterize ZVS performance with different reverse recovery charges in different regions. The concept of establishing parameter C total to consider both C j and C rr_eq is proposed to evaluate the effect of the secondary-side rectifiers. This concept provides the guideline for diode and synchronous rectification MOSFET selection to ensure ZVS condition for LLC converters. To verify the concept and the derived model,a 200/400 V 400 W LLC resonant converter prototype operating from 200 to 700 kHz is built and its ZVS performances with different diodes are compared. Two issues caused by Q rr effect, including V ds reverse charging and asymmetrical waveform during deadtime, are explained thoroughly as well.
Improved Frequency-Domain Steady-State Modeling of the Dual-Active-Bridge Converter Considering Finite ZVS Transition Time Effects
This article presents an improved analytical modeling (IAM) approach for the dual-active-bridge (DAB) converter in the frequency-domain. Specifically, finite transition times are incorporated into the improved modeling that are significant in DAB converters operated at high frequency. The IAM approach is first motivated by comparing traditional frequency-domain modeling against realistic simulation results in LTspice. Next, the IAM approach is mathematically developed in an iterative fashion, where the conventional frequency-domain approach is used as the initialization of the operational behavior of the converter. Subsequent iterations of the IAM algorithm incorporate finite rise- and falltimes of device output capacitances based on detailed switching behavior analyses, which may considerably perturb the desired modulation parameters (i.e., phase shift and zero states). While the initially proposed IAM approach demonstrates advantages over ideal modeling, it is still shown to exhibit errors when applied to device transitions with significant nonlinearity in parasitic output capacitance. To account for this, a three-slope approximation to the switching transition is then motivated and developed, which enables significantly improved steady-state prediction accuracy. Simulation and experimental results confirm unacceptable inaccuracies associated with the conventional frequency-domain modeling across a wide range of operating conditions, alongside enhanced accuracy provided by the proposed modeling approach.
Investigation of Various Transformer Topologies for HF Isolation Applications
High-frequency (HF) transformers are an essential part of many power electronic devices. The performance and behavior of HF transformers can greatly affect the efficiency and performance of all systems, particularly, from a parasitic parameter point of view. In this article, HF transformers' parasitic parameters, such as leakage inductances and parasitic capacitances, are analyzed using a novel analytical method, finite element method (FEM), and experimental measurements of different structures and winding arrangements. Also, the magnetic field, electric field, electric displacement field, and electric potential distribution within the transformers are simulated and analyzed. Four different HF transformers with E and U cores with different windings are designed and analyzed. Investigation outcomes help to classify structures according to the trade-off between leakage inductances and series parasitic capacitances. This information can later be used for the optimal selection and design of transformers as a function of their operating frequency for any power rating and voltage level. Moreover, 3-D FEM and experimental results validate the proposed methodology to be used for designing HF transformers in high-voltage/power applications.
Effect of Substrate Temperature on the Electrochemical and Supercapacitance Properties of Pulsed Laser-Deposited Titanium Oxynitride Thin Films
Electrocatalytically active titanium oxynitride (TiNO) thin films were fabricated on commercially available titanium metal plates using a pulsed laser deposition method for energy storage applications. The elemental composition and nature of bonding were analyzed using X-ray photoelectron spectroscopy (XPS) to reveal the reacting species and active sites responsible for the enhanced electrochemical performance of the TiNO electrodes. Symmetric supercapacitor devices were fabricated using two TiNO working electrodes separated by an ion-transporting layer to analyze their real-time performance. The galvanostatic charge–discharge studies on the symmetric cell have indicated that TiNO films deposited on the polycrystalline titanium plates at lower temperatures are superior to TiNO films deposited at higher temperatures in terms of storage characteristics. For example, TiNO films deposited at 300 °C exhibited the highest specific capacity of 69 mF/cm 2 at 0.125 mA/cm 2 with an energy density of 7.5 Wh/cm 2 . The performance of this supercapacitor (300 °C TiNO) device is also found to be ~22% better compared to that of a 500 °C TiNO supercapacitor with a capacitance retention ability of 90% after 1000 cycles. Furthermore, the difference in the electrochemical storage and capacitance properties is attributed to the reduced leaching away of oxygen from the TiNO films by the Ti plate at lower deposition temperatures, leading to higher oxygen content in the TiNO films and, consequently, a high redox activity at the electrode/electrolyte interface.
Wafer-scale high-k SrTiO 3 dielectrics with rational barrier-layer design for low leakage and high charge density
High-k oxides such as SrTiO 3 promise large capacitance, but their dielectric response is often limited by leakage currents due to reduced bandgaps. We show that introducing a thin barrier layer beneath SrTiO 3 is a simple and effective way to suppress leakage and increase charge density. Using hybrid molecular beam epitaxy, we grew uniform SrTiO 3 films on Nb:SrTiO 3 , CaSnO 3 /Nb:SrTiO 3 , and 2-in. SiO 2 /p-Si stacks to directly compare how different barrier layers influence device behavior. Both CaSnO 3 and SiO 2 reduce leakage, but the ultra-wide-bandgap SiO 2 layer enables much higher operating voltages, yielding charge densities exceeding 5 × 10 13 cm −2 at room temperature—more than a fivefold enhancement compared to devices without a barrier layer. This improvement comes with a predictable trade-off: the lower dielectric constant of SiO 2 reduces overall capacitance, making its thickness an important design parameter. Together, these results demonstrate that rational barrier-layer engineering—including wafer-scale integration on Si—provides a clear pathway to achieving higher charge densities in SrTiO 3 -based dielectric devices.
First demonstration of 30 eVee ionization energy resolution with RICOCHET germanium cryogenic bolometers
The future RICOCHET experiment aims to search for new physics in the electroweak sector by measuring the Coherent Elastic Neutrino-Nucleus Scattering process from reactor antineutrinos with high precision down to the sub-100 eV nuclear recoil energy range. While the RICOCHET collaboration is currently building the experimental setup at the reactor site, it is also finalizing the cryogenic detector arrays that will be integrated into the cryostat at the Institut Laue Langevin in early 2024. In this paper, we report on recent progress from the Ge cryogenic detector technology, called the CryoCube. More specifically, we present the first demonstration of a 30 eVee (electron equivalent) baseline ionization resolution (RMS) achieved with an early design of the detector assembly and its dedicated High Electron Mobility Transistor (HEMT) based front-end electronics with a total input capacitance of about 40 pF. This represents an order of magnitude improvement over the best ionization resolutions obtained on similar phonon-and-ionization germanium cryogenic detectors from the EDELWEISS and SuperCDMS dark matter experiments, and a factor of three improvement compared to the first fully-cryogenic HEMT-based preamplifier coupled to a CDMS-II germanium detector with a total input capacitance of 250 pF. Additionally, we discuss the implications of these results in the context of the future RICOCHET experiment and its expected background mitigation performance.
Online Learning for Commercial Buildings
There has been an increased interest in designing optimization based techniques for the control of building heating, ventilation, and air-conditioning (HVAC) systems for either improving the energy efficiency of buildings or providing ancillary services to the electric grid. The performance of such prediction-based control techniques heavily rely on the model of a building’s thermal dynamics. However, the development of high fidelity building thermal dynamic models is challenging given the presence of large uncertainties that affect thermal loads in buildings such as building envelope performance, thermal mass, internal heat gains as well as occupants' behavior. In this paper, we propose a method to identify both a resistive-capacitive parametric model, and non -parametric load uncertainties using measured input-output data. The parametric model is obtained using semi-parametric regression, whereas the non-parametric part is based on Random Forest, where regression trees are used to derive the dependency of non-parametric terms on both building operation parameters and ambient temperature. The effectiveness of the method is evaluated using experimental data collected from an office building at the Pacific Northwest National Laboratory (PNNL) campus. The proposed methodology was observed to provide improved accuracy over appropriate baseline strategies, when predicting indoor air temperatures.
A Unidirectional Two-Compartment Neuron Circuit with On-chip STDP learning
Most neuromorphic chips implement the single-compartment point neuron model where synapse circuits connect directly to a leaky integrate and fire (LIF) soma circuit. However, when using a biologically plausible soma circuit (e.g., Hodgkin-Huxley neuron model), an interface circuitry, such as a current conveyor circuit, is needed to transmit synaptic current to the soma circuit. This is especially true for ultra-low power neuron circuits, where membrane capacitance is on the order of 20 fF. This need for an interface circuit arises because the parasitic capacitance and leakage current caused by fabrication mismatch and second-order effects of the output transistors in the synapse circuits can disturb the spiking dynamics of the soma circuit if connected without an interface. Using an interface circuit to isolate the soma’s membrane capacitor from synapses resolves this issue. We propose to use a unidirectional resistor (a transconductance circuit) to connect the synapse and soma circuits instead of conventional current conveyor circuits. Using a biologically plausible spike pattern detection model, we show that the on-chip spike-timing-dependent plasticity (STDP) learning performance of the proposed unidirectional two-compartment neuron circuit is similar to a single-compartment circuit (with a current conveyor as an interface) and additionally, it is more power-efficient and biologically plausible. The chip is fabricated in the Taiwan Semiconductor Manufacturing Company (TSMC) 250 nm technology node and comprises a single neuron circuit.
The Influence of Cr-Additives on the Polarization Resistance of Praseodymium-Doped Ceria Cathodes for Solid Oxide Fuel Cells
While Cr poisoning of the oxygen reduction reaction (ORR) at SOFC cathodes is widely agreed to involve deactivation of oxygen exchange sites, the degradation mechanism remains ambiguous. Here, we selected an alternative cathode material Pr 0.1 Ce 0.9 O 2− δ , free of Sr segregation, to systematically investigate the effect of Cr-induced degradation in ORR. We expand on our previous studies in which the acidity/basicity of binary additives was found to be a strong indicator of the rate of oxygen surface exchange, by electrochemically investigating the ORR activity of the PCO cathode by impedance spectroscopy. Serial infiltration with acidic Cr-based oxides was found to degrade ORR activity as reflected in a 20-fold increase in area specific resistance (ASR) without corresponding changes in activation energy, with the opposite trend obtained with Ca-based oxides. Detected changes in total capacitance, attributed to changes in surface capacitance, also suggest depressed/enhanced PCO surface redox behavior with Cr/Ca-based infiltrants. Taken together, these results point to a more universal source of ORR poisoning/activation, based on acidity/basicity, rather than physical blocking of active sites. With this improved understanding, one can expect progress to be made in the coming years in optimizing means for protecting catalytic surfaces from degradation and/or improving their performance.
Pseudocapacitive Charge Storage in Electrochromic Transition-Metal Oxide Thin Films
Electrochromic pseudocapacitive transition-metal oxide materials, such as tungsten oxide, which combine fast response, high energy density, and optical effects, can play a significant role as energy storage materials. Here we investigate the electrochemical kinetics of thin films of tungsten oxide, which turn transparent to sky-blue color in the lithiated state due to the reduction of W 6+ to W 5+ . In this study, we investigated the charge density, charge transfer, ion diffusion, and interfacial behavior upon Li + insertion/de-insertion in WO 3 . The electrochromic thin film's pseudocapacitive and electrical double layer mechanism was differentiated based on the power-law. Faradaic diffusion-controlled process dominates over the surface capacitive behavior at scan rates below 40 mV s –1 . These films exhibit an areal charge density of around 100 mC cm –2 and a capacitance of 80 mF cm –2 , superior to most comparable electrochromic materials and supercapacitors. This work combines electrochromics and energy storage properties and provides a fundamental understanding of pseudocapacitive and electrochromic mechanisms in WO 3 .
Cation Molecular Structure Affects Mobility and Transport of Electrolytes in Porous Carbons
We examined the electrosorption and ion dynamics of imidazolium-based room temperature ionic liquids (RTILs) having short (3-carbon, C3mim + ) and long (12-carbon, C12mim + ) cations, that is, 1-propyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide (C3mimTFSI) and 1-dodecyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide (C12mimTFSI), confined in ordered mesoporous carbon (OMC) and analyzed the influence of the cation alkyl chain length on the ion dynamics and the capacitive behavior using electrochemical measurements together with quasi-elastic neutron scattering (QENS) observations and classical density functional theory (cDFT) computations. Electrochemical tests highlighted the significant influence of specific applied potentials on accumulated charge storage densities and on the limits of saturation of larger electrolytes in the pores. Computational analyses corroborated these findings and predicted a 16% increase in the capacitance of the smaller-cation electrolyte under high applied potentials. However, QENS experiments revealed a behavior of decoupling of alkyl chain dynamics from the ring in electrolytes with larger ions. cDFT calculations identified density spikes for C12mim + away from the pore walls to further corroborate this unique behavior. Here, our insights into chain length-dependent dynamics and electrosorption in complex electrolyte-electrode systems deepen fundamental understanding of confined RTIL electrolyte behavior in the porous carbon electrodes.
Zeptocalorimetry
Here we present the development of a Zeptocalorimeter. The motivation for designing and implementing such a device is driven, ultimately, by its anticipated exceptional sensitivity (10-21 J/K, at 2K). Such a device would be highly valuable in detecting minute quantities of mass for threat detection, studying fundamental phonon physics, and detecting energetic dissipation events at the attojoule level. To date, the most sensitive calorimeter demonstrated in the literature at 2K has been developed by the Roukes group at Caltech, where they achieved an addendum heat capacity of 10 -15 J/K with a 1/1000 sensitivity to external stimuli. To obtain such a low value of heat capacity requires a very small thermal mass, and thus, one of the greatest challenges in this project is the fabrication of this device, which requires numerous precision nanofabrication techniques. Furthermore, the heat capacity measurement of this device, as performed from room temperature to cryogenic temperatures, is equally challenging, as the transient signals used to determine the platform's thermal time constant require careful attention to the mitigation of feedthrough capacitance and delicate amplifier offsets. In this report we describe in detail the fabrication process flow for developing the calorimeter, including the layout and device design for obtaining a single lumped RC thermal resistance and capacitance, so that the device can be used for quantitative measurements of nanoscale materials with a suitable thermal link. The measurement method and experimental setup are also given, where we explain the heater and thermometer calibration methods, the thermal resistance measurements, the transient measurements, and lastly the cryogenic setup with intermediate frequency cabling and the thermal sinking of those lines.
Crosscutting Recombination Metrology for Expediting VOC Engineering
Work carried out under this grant addressed the need for improved materials and device characterization of solar cell designs. This experimental program aimed to develop joint electrical and optical studies of solar cells based on the group-II-VI semiconductor CdTe and the chalcogenide semiconductor Cu(InGa)Se 2 . Electrical measurements focused on temperature (T) and illumination intensity (I) dependence of the open-circuit voltage (VOC), a quantity that plays an important role in conversion efficiency. The VOC depends on temperature and illumination intensity through the energy gap and positions of the quasiFermi levels (QFLs). Optical measurements exploited the illumination and temperature dependence of absolute photoluminescence (PL) intensity (PL-I), a quantity that also depends on the QFL positions. The QFL splitting is a quantity that also depends on recombination rates within the solar cell, including radiative and non-radiative processes. Other factors affect the electrical and optical properties. These include band offsets at both the front and back interfaces of the device active region where electrical contacts are formed. Understanding, locating, and quantifying the recombination properties of the solar cells was the principal goal of this research. Custom simulations were developed to solve continuity and Poisson equations selfconsistently to obtain free-electron and free-hole concentrations. The measurements of temperature and intensity dependent VOC and PL-I allowed the extraction of a number of physical parameters including the conduction band offset, the shunt constant, and the effective capture coefficient for recombination centers, both within the absorber and at the absorber-buffer interface. In addition, the back-contact barrier height is determined from electrical properties. Each of these is discussed in the report. The illumination intensity dependence of VOC and PL-I do not overlap in experiments primarily because PL is not observed in the low-intensity regime where VOC is studied. Absolute PL-I measurements enabled development of an approach directly comparing it with VOC. This in turn allowed development of a simulation capability that would consistently use both measurements, as functions of T and I, for producing a minimization scheme using a differential evolution algorithm. The approach was applied to both CdTe and Cu(InGa)Se 2 solar cells each prepared under various conditions. Shunt conductivity, QFL splitting, recombination were measured. Also extensively studied are current-voltage and frequency-dependent capacitance voltage. Work completed under this grant included studies of magnesium zinc oxide (MZO) buffered CdTe solar cells including the effects of hydroiodic acid (HI) treatment. From these studies the recombination rates were quantified at the buffer/absorber (front) interface. The effect of back-contact barrier height was investigated. CdTe solar cells were prepared with CdSe and CdS buffer layers. Lower grain-boundary potential fluctuation, higher back-contact barrier height, and greater bulk recombination were observed in early devices with CdSe buffer layer. Investigations were also carried out into CdS/Cu(InGa)Se 2 solar cells. A metal-insulatorsemiconductor capacitance-voltage technique was developed to extract recombinationrelevant properties of the absorber interface. From this work the density of interface states D it , their capture cross-section σ, fixed charge at the interface Q f , and surface recombination velocity were all extracted.
LANL studies of ESD spark energy discharge through September 2019
Two concentric-sphere apparatuses were used to measure the energies deposited by electric sparks through air to calibrated loads. Both sets of spheres had clean, uninsulated metal surfaces. The 127-mm diameter pair of spheres had a gap of 10 mm and a capacitance of 52 pF. The maximum energy stored on these spheres was 12 mJ and the maximum energy delivered to the 50-mΩ load was 11 µJ, with or without inductance. This load energy amounted to 0.09% of the available input energy; the remainder of the input energy was expended in forming the spark. The second set of spheres was 330 mm in diameter with a gap of 14 mm and a capacitance of 240 pF. The maximum energy stored on these spheres was 71 mJ and the maximum energy delivered to the 50-mΩ load was 150 µJ without added inductance. This load energy was 0.27% of the input energy; again, the remainder of the input energy was expended in forming the spark. The inclusion of 250 nH and 500 nH inductances in the discharge path of the smaller spheres caused the current discharges to resonate, but had little effect on the maximum energies deposited in the loads. At the time of writing, inductances had not yet been added to the larger spheres. The magnitudes of the observed spark discharges were stochastic, so more than 1200 tests were required to develop the statistical bounds of the spark behavior, i.e., to estimate the worst case (highest likely) energy depositions in the loads. The action integrals of the current discharges $∫ i^2dt$ were found to be approximately independent of the load resistances for loads of less than ~1 Ω. Hence the energy deposition scaled with resistance as 207 µJ/Ω and 2.93 mJ/Ω for the two apparatuses.
PSL-AC-CP-1102-004-03: Electrostatic Discharge Simulator Kit Model 930D and Associated Current-Viewing Resistor (V.04)
This document provides instructions for calibrating the Electro-Tech (ETS) electrostatic discharge (ESD) simulator, Model 930D. The calibration shall meet the ± 5% specification for resistance and capacitance as specified in MIL-STD-331C 2009 newer. A series of direct measurements of the Device Under Test (DUT) output at 25 kV using a calibrated LeCroy HDO 6104 oscilloscope (or equivalent 1 MΩ) input impedance storage oscilloscope) are recorded through the 500-pF capacitor, 500-Ω resistor, and a 1-Ω Current Viewing Resistor (CVR). The certified value of the DUT's 25 kV output is calculated using Ohms Law and the certified system resistance and capacitance described in this procedure. Read this document in its entirety before proceeding with the calibration.