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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 847 records · Page 47
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Formation of a Thin Luminescent Layer in LiF Crystals under Glow Discharge Radiation

The formation of thin layers of luminescent defects on the faces of planar lithium fluoride crystals located in the positive column and Faraday dark space of a glow gas discharge was studied by time-resolved confocal scanning luminescent microscopy and time-correlated single photon counting. The formation of aggregated color centers in the surface layers of crystals was established using the spectral and kinetic characteristics of luminescence appearing after irradiation. The role of gas discharge electrons, ions, and photons in the defect formation mechanism was considered. The defects were shown to be formed under the influence of vacuum ultraviolet (VUV) photons. The VUV radiation intensity distribution in the discharge gap was measured by the method of thermostimulated luminescence. The main source of this radiation was the anodic and cathodic voltage drop regions in a glow discharge.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Radiation-Enhanced Anion Transport in Hematite

The influence of radiation-induced (1 MeV energy H+ to ~0.1 dpa at 450°C), non-equilibrium point defect populations on mass transport is studied with an integrated campaign of experimental and theoretical methods. Using epitaxial thin films of hematite with embedded 18O tracer layers and nanoscale atom probe tomography measurements, it is shown that anion self-diffusion is enhanced by at least 2 orders of magnitude under irradiation compared to thermal diffusion alone. Complementary scanning transmission electron microscopy of vacuum annealed specimens, reveals associated microstructural changes in the oxide films, including local phase transformation to Fe3O4 and the development of nanoscale voids from vacancy coalescence. Point defect formation and migration energies were computed from density functional theory and applied within the context of chemical rate theory to analyze contributions from both interstitial and vacancy mechanisms to self-diffusion in thermal and irradiation conditions. Comparisons are made between calculated, literature and newly measured self-diffusion values, revealing good agreement on the magnitude of radiation-enhanced anion diffusion. Further, the model suggests a transition from vacancy to interstitialcy mechanisms at low temperatures and high oxygen activity, consistent with the varied activation energies reported from prior studies.

iron oxides, isotopic tracers, atom probe tomograp↗
DOE OSTI2024

Single Crystalline GeSe Van Der Waals Ribbons With Uniform Layer Stacking, High Carrier Mobility, and Adjustable Edge Morphology

Abstract Performance of the group IV monochalcogenide GeSe in solar cells, electronic, and optoelectronic devices is expected to improve when high‐quality single crystalline material is used rather than polycrystalline films. Crystalline flakes represent an attractive alternative to bulk single crystals as their synthesis may be developed to be scalable, faster, and with higher overall yield. However, large – and especially large and thin – single crystal flakes are notoriously hard to synthesize. Here it is demonstrated that vapor‐liquid‐solid growth combined with direct lateral vapor‐solid incorporation produces high‐quality single crystalline GeSe ribbons with tens of micrometers size and controllable thickness. Electron microscopy shows that the ribbons exhibit perfect equilibrium (AB) van der Waals stacking order without extended defects across the entire thickness, in contrast to the conventional case of substrate‐supported flakes where material is added via layer‐by‐layer nucleation and growth on the basal plane. Electrical measurements show anisotropic transport and a high Hall mobility of 85 cm 2 V −1 s −1 , on par with the best single crystals to date. Growth from mixed GeSe and SnSe vapors, finally, yields ribbons with unchanged structure and composition but with jagged edges, promising for applications that rely on ample chemically active edge sites, such as catalysis or photocatalysis.

99 GENERAL AND MISCELLANEOUS↗
DOE OSTI2025

Mechanistic Transformation of CuI Nanoparticles Into Oxidation‐Resistant 2D Copper Nanoplates

Unconventional phase transformations reveal new crystallization mechanisms, yet direct observation of such pathways during nanoscale solution-phase synthesis remains challenging. This study uncovers an atypical growth process in which thermodynamically stable CuI nanoparticles (NPs) transform into high-energy 2D Cu plates. Using a combination of in situ transmission electron microscopy, ex situ structural analysis, and density functional theory calculations shows that the formation of structural defects induced by hexadecylamine and chloride ions facilitates the transformation by promoting surface iodine vacancies. The resulting Cu{111} nanoplates, with ultrathin thicknesses (≈4 nm) and exceptionally high aspect ratios (≈450), display enhanced oxidation resistance and long-term stability under ambient conditions. This resistance is attributed to the close-packed {111} facets, which suppress chemical oxidation even after extended exposure to air over 100 days. These findings provide new insights into non-classical crystallization pathways in metal nanomaterials and suggest a versatile approach for preparing oxidation-resistant, structurally defined Cu nanostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2018

GeV ion irradiation of NiFe and NiCo: Insights from MD simulations and experiments

Concentrated solid solution alloys have attracted rapidly increasing attention due to their potential for designing materials with high tolerance to radiation damage. To tackle the effects of chemical complexity in defect dynamics and radiation response, we present in this paper a computational study on swift heavy ion induced effects in Ni and equiatomic Ni -based alloys (Ni 50 Fe 50 , Ni 50 Co 50 ) using two-temperature molecular dynamics simulations (2T-MD). The electronic heat conductivity in the two-temperature equations is parameterized from the results of first principles electronic structure calculations. A bismuth ion (1.542 GeV) is selected and single impact simulations performed in each target. We study the heat flow in the electronic subsystem and show that alloying Ni with Co or Fe reduces the heat dissipation from the impact by the electronic subsystem. Simulation results suggest no melting or residual damage in pure Ni while a cylindrical region melts along the ion propagation path in the alloys. In Ni 50 Co 50 the damage consists of a dislocation loop structure (d = 2 nm) and isolated point defects, while in Ni 50 Fe 50 , a defect cluster (d = 4 nm) along the ion path is, in addition, formed. The simulation results are supported by atomic-level structural and defect characterizations in bismuth-irradiated Ni and Ni 50 Fe 50 . Finally, the significance of the 2T-MD model is demonstrated by comparing the results to those obtained with an instantaneous energy deposition model without consideration of e-ph interactions in pure Ni and by showing that it leads to a different qualitative behavior.

36 MATERIALS SCIENCE↗
DOE OSTI2022

In-situ TEM study of Kr ion irradiation tolerance of SiFeOC nanocomposite

Here, in this work, ion irradiation of polymer derived SiFeOC nanocomposite was carried out using 1.2 MeV Kr ions at room temperature and 600°C. The starting composite was composed of Fe 3 Si, SiC, SiOC, SiO 2 , and graphitic C. In-situ TEM investigations show uniform distribution of nano-crystalline Fe 3 Si and SiC phases in the amorphous SiOC matrix. During ion irradiation, the SiOC bulk microstructure and interfaces between Fe 3 Si or SiC crystallites and the SiOC matrix remain defect-free and demonstrate outstanding ion irradiation resistance. At room temperature, the crystalline domains are stable up to 2 dpa. At 600°C, Fe 3 Si crystallites are more stable than SiC; SiC crystallites are stable up to 4 dpa while the Fe 3 Si crystallites are stable up to 10 dpa. These crystallites also coalescence and amorphize simultaneously during ion irradiation. The exceptional tolerance to defect formation and irradiation of the SiFeOC nanocomposite provides important guidance to developing irradiation resistant fuels for advanced gas cooled reactors.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Revealing local order via high energy EELS

Short range order (SRO) is critical in determining the performance of many important engineering materials. However, accurate characterization of SRO with high spatial resolution – which is needed for the study of individual nanoparticles and at material defects and interfaces – is often experimentally inaccessible. Here, we locally quantify SRO via scanning transmission electron microscopy with extended energy loss fine structure analysis. Specifically, we use novel instrumentation to perform electron energy loss spectroscopy out to 12 keV, accessing energies which are conventionally only possible using a synchrotron. Our data is of sufficient energy resolution and signal-to-noise ratio to perform quantitative extended fine structure analysis, which allows determination of local coordination environments. To showcase this technique, we investigate a multicomponent metallic glass nanolaminate and locally quantify the SRO with <10 nm spatial resolution; this measurement would have been impossible with conventional synchrotron or electron microscopy methods. Finally, we discuss the nature of SRO within the metallic glass phase, as well as the wider applicability of our approach for determining processing–SRO–property relationships in complex materials.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Comparison of Dislocation Characterization by Electron Channeling Contrast Imaging and Cross-Correlation Electron Backscattered Diffraction

The characterization and quantification of dislocations is predominately carried out using transmission electron microscopy (TEM). Nevertheless, the sample preparation necessary for TEM foils can be cumbersome and possibly introduce defects. Two other techniques for characterizing and quantifying dislocations are electron channeling contrast imaging (ECCI) and cross-correlation electron backscattered diffraction (CC-EBSD). ECCI is similar to TEM in that specific imaging (channeling or diffraction) conditions need to be established, but is carried out in a scanning electron microscope on bulk samples, resulting in less complex sample preparation. CC-EBSD measures subtle changes in orientation measured from EBSD patterns to calculate elastic strains and the Nye tensor to deduce and map the total geometrically necessary dislocation (GND) content. Furthermore, this work presented here compares the capabilities of ECCI and CC-EBSD to map dislocations generated from nanoindentation.

42 ENGINEERING↗
DOE OSTI2026

Synthesis and Properties of Bulk Mg 3 WN 4 in a Wurtzite-Derived Structure

Experimental synthesis of theoretically predicted materials with controlled elemental coordination environments can lead to the realization of useful properties, such as facile ion transport or ferroelectric switching. Among such materials are ternary nitrides in the Mg−W−N composition space, where several stable and metastable compounds have been predicted and synthesized recently in bulk and film forms. Here, we report for the first time on the bulk synthesis of Mg 3 WN 4 in a wurtzite-derived crystal structure via a solid-state metathesis reaction. In situ synchrotron powder X-ray diffraction shows how the ion exchange proceeds from Li 6 WN 4 + MgCl 2 precursors to Mg 3 WN 4 + LiCl products, with the reaction starting slowly near 380 °C and completing by 600 °C, including the presence of a competing disordered rocksalt-derived phase (Mg,W)N above 440 °C. The follow-up ex situ powder synthesis at 400 °C for 0.5 h with 10% excess MgCl 2 reveals the cation-ordered nature of the wurtzite-derived Mg 3 WN 4 structure with polar symmetry confirmed by second-harmonic generation measurements. Optical absorption spectra, chemical composition analysis, and electron microscopy imaging suggest that bulk Mg 3 WN 4 obtained via metathesis reaction is prone to defect formation. Overall, this study shows that selective ex situ synthesis of the phase-pure ternary nitrides, informed by in situ measurements, is possible by carefully controlling the thermal budget of the reaction and paves the way toward property characterization of the Mg 3 WN 4 wurtzite-derived material.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Morphology, Deformations, and Photocatalytic Activity of Thermally Treated Brookite Titanium Dioxide Thin Films

Metastable states, in which the coupling between long-range lattice deformations and electronic properties can be controlled, provide a pathway to tailoring the behavior of photocatalytic materials by directing the flow of photoinduced charge carriers. Brookite is a metastable polymorph of earth-abundant TiO 2 that exhibits photocatalytic function and, due to its high energy relative to the anatase and rutile polymorphs, may serve as a precursor for the formation of transitional metastable structures. In this work, facile thermal annealing is employed to promote the formation of predominantly brookite-phase films, regulate the brookite lattice distortions, and determine the effect of these distortions on charge separation, ultimately directed at enhancing photocatalytic activity. Profile fitting of X-ray diffraction patterns and peak shifts in Raman spectra revealed structural distortions of the brookite lattice. Structural defects, including lattice gliding, dislocations, stacking faults, and twin boundaries, were observed using scanning transmission electron microscopy. First-principles simulations reveal how the lattice distortions associated with stacking faults induce band bending, thus increasing the photocatalytic activity of brookite. In conclusion, this study provides insight into the microstructural tuning of metastable phases to enhance their unique functionalities.

band bending↗
DOE OSTI2022

Stacking Fault Induced Symmetry Breaking in van der Waals Nanowires

While traditional ferroelectrics are based on polar crystals in bulk or thin film form, two-dimensional and layered materials can support mechanisms for symmetry breaking between centrosymmetric building blocks, e.g., by creating low-symmetry interfaces in van der Waals stacks. Here, we introduce an approach toward symmetry breaking in van der Waals crystals that relies on the spontaneous incorporation of stacking faults in a nonpolar bulk layer sequence. The concept is realized in nanowires consisting of Se-rich group IV monochalcogenide (GeSe 1–x S x ) alloys, obtained by vapor–liquid–solid growth. The single crystalline wires adopt a layered structure in which the nonpolar A-B bulk stacking along the nanowire axis is interrupted by single-layer stacking faults with local A-A' stacking. Density functional theory explains this behavior by a reduced stacking fault formation energy in GeSe (or Se-rich GeSe 1–x S x alloys). Computations demonstrate that, similar to monochalcogenide monolayers, the inserted A-layers should show a spontaneous electric polarization with a switching barrier consistent with a Curie temperature above room temperature. Second-harmonic generation signals are consistent with a variable density of stacking faults along the wires. Here, our results point to possible routes for designing ferroelectrics via the layer stacking in van der Waals crystals.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Dynamic RNA acetylation revealed by quantitative cross-evolutionary mapping

N 4 -acetylcytidine (ac 4 C) is an ancient and highly conserved RNA modification that is present on tRNA and rRNA and has recently been investigated in eukaryotic mRNA. However, the distribution, dynamics and functions of cytidine acetylation have yet to be fully elucidated. In this work, we report ac 4 C-seq, a chemical genomic method for the transcriptome-wide quantitative mapping of ac 4 C at single-nucleotide resolution. In human and yeast mRNAs, ac 4 C sites are not detected but can be induced—at a conserved sequence motif—via the ectopic overexpression of eukaryotic acetyltransferase complexes. By contrast, cross-evolutionary profiling revealed unprecedented levels of ac 4 C across hundreds of residues in rRNA, tRNA, non-coding RNA and mRNA from hyperthermophilic archaea. Ac 4 C is markedly induced in response to increases in temperature, and acetyltransferase-deficient archaeal strains exhibit temperature-dependent growth defects. Visualization of wild-type and acetyltransferase-deficient archaeal ribosomes by cryo-electron microscopy provided structural insights into the temperature-dependent distribution of ac 4 C and its potential thermoadaptive role. Our studies quantitatively define the ac 4 C landscape, providing a technical and conceptual foundation for elucidating the role of this modification in biology and disease.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2015

Abrupt GaP/Si hetero-interface using bistepped Si buffer

We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission electron microscopy and scanning transmission electron microscopy. GaP layers were grown by molecular beam epitaxy on vicinal Si (001). The strong effect of the Si substrate chemical preparation is first demonstrated by studying structural properties of both Si homoepitaxial layer and GaP/Si heterostructure. It is then shown that choosing adequate chemical preparation conditions and subsequent III-V regrowth conditions enables the quasi-suppression of micro-twins in the epilayer. Finally, the abruptness of GaP/Si interface is found to be very sensitive to the Si chemical preparation and is improved by the use of a bistepped Si buffer prior to III-V overgrowth.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Luminescence methodology to determine grain-boundary, grain-interior, and surface recombination in thin-film solar cells

We determine the grain-boundary (GB) recombination velocity, S GB , and grain-interior (GI) lifetime, t GI , parameters in superstrate CdS/CdTe thin-film solar cell technology by combining cathodoluminescence (CL) spectrum imaging and time-resolved photoluminescence (TRPL) measurements. We consider critical device formation stages, including after CdTe deposition, CdCl 2 treatment, and Cu diffusion. CL image analysis methods extract GB and GI intensities and grain size for hundreds of grains per sample. Concurrently, a three-dimensional CL model is developed to simulate the GI intensity as a function of t GI , S GB , grain size, and the surface recombination velocity, S surf . TRPL measurements provide an estimate of S surf for the CL model. A fit of GI intensity vs. grain size data with the CL model gives a self-consistent and representative set of S GB and t GI values for the samples: S GB (t GI ) = 2.6 x 10 6 cm/s (68-250 ps), S GB (t GI ) = 4.1 x 10 5 cm/s (1.5-3.3 ns), and S GB (t GI ) = 5.5 x 10 5 cm/s (1.0-3.8 ns) for as-deposited, CdCl 2 -treated, and CdCl 2- A nd Cu-treated samples, respectively. Thus, we find that the CdCl2 treatment both helps to passivate GBs and significantly increase the GI lifetime. Subsequent Cu diffusion increases GB recombination slightly and has nuanced effects on the GI lifetime. Finally, as a partial check on the S GB and t GI values, they are input to a Sentaurus device model, and the simulated performance is compared to the measured performance. The methodology developed here can be applied broadly to CdTe and CdSeTe thin-film technology and to other thin-film solar cell materials including Cu(In 1-x Ga x )Se 2 , Cu 2 ZnSnS 4 , and perovskites.

14 SOLAR ENERGY↗
DOE OSTI2015

High-dose neutron irradiation performance of dielectric mirrors

The study presents the high-dose behavior of dielectric mirrors specifically engineered for radiation-tolerance: alternating layers of Al 2 O 3 /SiO 2 and HfO 2 /SiO 2 were grown on sapphire substrates and exposed to neutron doses of 1 and 4 dpa at 458 10K in the High Flux Isotope Reactor (HFIR). In comparison to previously reported results, these higher doses of 1 and 4 dpa results in a drastic drop in optical reflectance, caused by a failure of the multilayer coating. HfO 2 /SiO 2 mirrors failed completely when exposed to 1 dpa, whereas the reflectance of Al 2 O 3 /SiO 2 mirrors reduced to 44%, eventually failing at 4 dpa. Transmission electron microscopy (TEM) observation of the Al 2 O 3 /SiO 2 specimens showed SiO 2 layer defects which increases size with irradiation dose. The typical size of each defect was 8 nm in 1 dpa and 42 nm in 4 dpa specimens. Buckling type delamination of the interface between the substrate and first layer was typically observed in both 1 and 4 dpa HfO 2 /SiO 2 specimens. Composition changes across the layers were measured in high resolution scanning-TEM mode using energy dispersive spectroscopy. A significant interdiffusion between the film layers was observed in Al 2 O 3 /SiO 2 mirror, though less evident in HfO 2 /SiO 2 system. Lastly, the ultimate goal of this work is the provide insight into the radiation-induced failure mechanisms of these mirrors.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

Tandem Microwire Solar Cells for Flexible High Efficiency Low Cost Photovoltaics

This project has developed components of a waferless, flexible, low-cost tandem multijunction III-V/Si microwire array solar cell technology which combines the efficiency of wafered III-V photovoltaic technologies with the process designed to meet the Sunshot object. The project focused on design of lattice-matched GaAsP/SiGe two junction cell design and lattice-mismatched GaInP/Si tandem cell design. Combined electromagnetic simulation/device physics models using realistic microwire tandem structures were developed that predict >22% conversion efficiency for known material parameters, such as tunnel junction structure, window layer structure, absorber lifetimes and optical absorption and these model indicate a clear path to 30% efficiency for high quality III-V heterostructures. SiGe microwire arrays were synthesized via Cu-catalyzed vapor-liquid-solid (VLS) growth with inexpensive chlorosilane and chlorogermance precursors in an atmospheric pressure reactor. SiGe alloy composition in microwires was found to be limited to a maximum of 12% Ge incorporation during chlorogermane growth, due to the melting of the alloy near the solidus composition. Lattice mismatched InGaP double heterostructures were grown by selective epitaxy with a thermal oxide mask on Si microwire substrates using metallorganic vapor phase epitaxy. Transmission electron microscopy (TEM) analysis confirms the growth of individual step graded layers and a high density of defects near the wire/III-V interface. Selective epitaxy was initiated with a low temperature nucleation scheme under “atomic layer epitaxy” or “flow mediated epitaxy” conditions whereby the Ga and P containing precursors are alternately introduced into the reactor to promote layer-bylayer growth. In parallel to our efforts on conformal GaInP heteroepitaxy on selectively masked Si microwires, we explored direct, axial growth of GaAs on Si wire arrays as another route to a tandem junction architecture. We proposed axial, lattice-mismatched growth of a GaAs segment that extrude out of a Si wire via a self-aligned SiO 2 hollow cylindrical mask. With this growth strategy, misfit dislocations that would normally form at the GaAs/Si interface during thin film epitaxy may bend over to and thus terminate at the sidewall of the SiO 2 tube. A reactive-ion etching technique was employed 1) to remove Si to form a hollow, self-aligned SiO 2 cylindrical tube as a growth template for GaAs epitaxy using a vertical, showerhead, low-pressure metal-organic chemical-vapor deposition reactor that was operated at 0.1 atm. Successful epitaxy of axial GaAs wires on non-polar, <111>-oriented Si wire substrates was found at temperatures of ~850C. This and the other III-V/Si heterojunction wire synthesis strategies described here are promising approaches to realize future III-V/Si tandem solar cell designs.

14 SOLAR ENERGY↗
NASA NTRS1985

Defect characterization of silicon dendritic web ribbons

Progress made in the study of defect characterization of silicon dendritic web ribbon is presented. Chemical etching is used combined with optical microscopy, as well as the electron beam induced current (EBIC) technique. Thermal annealing effect on carrier lifetime is examined.

Cheng, L. J.↗
DOE OSTI2019

Article comprising a semiconducting material

Single crystals of the new semiconducting oxychalcogenide phase were synthesized using a novel crystal growth method. The crystals had low defects and homogeneous composition as characterized by single crystal X-ray diffraction and scanning electron microscopy, respectively. Heat capacity and resistivity measurements were in agreement with the calculated band structure calculations indicating semiconductivity, with a band gap of about 3 eV.

Whalen, Jeffrey↗