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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 865 records · Page 48
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

B 12 P 2 : Improved Epitaxial Growth and Evaluation of Alpha Irradiation on its Electrical Transport Properties

The wide bandgap (3.35 eV) semiconductor icosahedral boron phosphide (B 12 P 2 ) has been reported to self-heal from radiation damage from β particles (electrons) with energies up to 400 keV by demonstrating no lattice damage using transmission electron microscopy. This property could be exploited to create radioisotope batteries–semiconductor devices that directly convert the decay energy from a radioisotope to electricity. Such devices potentially have enormous power densities and decades-long lifetimes. To date, the radiation hardness of B 12 P 2 has not been characterized by electrical measurements nor have B 12 P 2 radioisotope batteries been realized. Therefore, this study was undertaken to evaluate the radiation hardness of B 12 P 2 after improving its epitaxial growth, developing ohmic electrical contacts, and reducing the residual impurities. Subsequently, the effects of radiation from a radioisotope on the electrical transport properties of B 12 P 2 were tested.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2024

Connecting radiation-driven changes in structural, thermal, and mechanical properties in several medical device polymers

Stemming from security threats and shortages in supply, a recent push has emerged to develop alternatives to radioisotope Cobalt-60 gamma radiation for sterilization of polymeric medical products, including electron beam (e-beam) and X-ray machine-based sources. However, before large-scale implementation, the effects of these non-isotope-based methods must be thoroughly investigated from several perspectives, involving their potential detrimental effects on the structural, thermal, and mechanical properties of polymers in medical devices. This paper investigates such effects in commonly used medical device polymers, including polypropylene homopolymer (PPH), polyolefin elastomer (POE), low-density polyethylene (LDPE), acrylonitrile butadiene styrene (ABS), and chlorobutyl rubber (CIIR). To connect radiation-driven changes in polymer structural and thermal properties and corresponding changes in mechanical properties, several characterization techniques were utilized, including gel permeation chromatography (GPC), Fourier transform infrared spectroscopy (FTIR), dynamic mechanical analysis (DMA) and differential scanning calorimetry (DSC). We found that the tensile strength of X-ray irradiated PPH, as well as X-ray, e-beam, and gamma irradiated CIIR decreases due to chain scission, which is corroborated by GPC and DMA. The GPC results of LDPE suggest chain scission, but interestingly without a corresponding decline in tensile strength. By comparison, POE and ABS appear to undergo further crosslinking with increasing irradiation dose, which generally strengthens them. Importantly, in the vast majority of the cases, there were small to no changes in properties upon changing radiation technologies (at a given dose), i.e., no radiation source dependence. However, in a few specific cases, radiation method dependencies did arise, for instance, in terms of the molecular weight of PPH being significantly increased upon X-ray irradiation, while the melting temperature, glass transition temperature, and elongation at break reduced compared to gamma. Overall, this study provides valuable insight into radiation-driven chemical and structural changes in polymers that produce changes in physical and functional properties.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Illuminating the Material World: Autonomous Microscopy to Understand Order, Disorder, and Everything In Between

Artificial intelligence (AI) holds immense promise for revolutionizing microscopy, yet its widespread adoption has been hindered by challenges ranging from user inexperience to limited model transferability and difficulties in operationalizing machine learning. This presentation showcases our approach to developing practical autonomy for materials discovery, aiming to accelerate the integration of AI into everyday microscopy workflows. As shown in Fig. 1, I will focus on three key areas: understanding order-disorder transitions, quantifying point defects, and achieving truly device-scale microscopy. First, I will demonstrate the power of multi-modal knowledge graphs for integrating diverse microscopy data. By combining imaging, spectroscopy, and diffraction data, these graphs provide a holistic view of material behavior, capturing the intricate relationships between different modalities [1,2]. I will present a case study on how these models illuminate the structural and chemical changes associated with irradiation in oxide thin films, revealing critical insights for designing materials for extreme environments like spaceflight and nuclear energy. Specifically, I will show how multi-modal analysis clarifies the evolution of order-disorder transitions under irradiation, a key factor influencing material performance in these applications. Next, I will address the challenge of quantifying point defects in 2D materials. We demonstrate the application of computer vision and transfer learning to accurately identify and classify various defect types, such as vacancies and substitutional atoms, and to quantify their concentrations. This information is crucial for understanding and tailoring the properties of 2D materials for applications in electronics, optoelectronics, and catalysis. For example, I will show how our models can characterize the topological distribution of point defects in MXene transition metal carbides, providing valuable insights for optimizing their performance in energy storage and separation science. Finally, I will discuss our progress toward autonomous device-scale microscopy [3,4]. We are fundamentally redesigning electron microscopes around the principles of machine reasoning, enabling automation beyond basic tasks like sample navigation and data acquisition to include sophisticated experimental design. This approach paves the way for truly reproducible and massively scaled analysis campaigns. I will emphasize the importance of autonomous microscopy platforms for high-throughput materials discovery and characterization, facilitating the rapid screening of materials for a broad range of applications and accelerating the development of next-generation technologies.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Quasi‐2D Perovskite Crystalline Layers for Printable Direct Conversion X‐Ray Imaging

Abstract Polycrystalline perovskite film‐based X‐ray detector is an appealing technology for assembling large scale imager by printing methods. However, thick crystalline layer without trap and solvent residual is challenging to fabricate. Here, the authors report a solution method to produce high quality quasi‐2D perovskite crystalline layers and detectors that are suitable for X‐ray imaging. By introducing n ‐butylamine iodide into methylammonium lead iodide precursor and coating at elevated temperatures, compact and crystalline layers with exceptional uniformity are obtained on both rigid and flexible substrates. Photodiodes built with the quasi‐2D layers exhibit a low dark current and stable operation under constant electrical field over 96 h in dark, and over 15 h under X‐ray irradiation. The detector responds sensitively under X‐ray, delivering a high sensitivity of 1214 µC Gy air −1 cm −2 and a sensitivity gain is observed when operated under higher fields. Finally, high resolution images are demonstrated using a single pixel device that can resolve 80–200 µm features. This work paves the path for printable direct conversion X‐ray imager development.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Alpha Radiation Effects on Silicon Oxynitride Waveguides

Photonic technologies are today of great interest for use in harsh environments, such as outer space, where they can potentially replace current communication systems based on radiofrequency components. However, very much alike to electronic devices, the behavior of optical materials and circuits can be strongly altered by high-energy and high-dose ionizing radiations. Here, we investigate the effects of alpha () radiation with MeV-range energy on silicon oxynitride (SiON) optical waveguides. Irradiation with a dose of 5×1015 cm-2 increases the refractive index of the SiON core by nearly 10-2, twice as much that of the surrounding silica cladding, leading to a significant increase of the refractive index contrast of the waveguide. The higher mode confinement induced by -radiation reduces the loss of tightly bent waveguides. We show that this increases the quality factor of microring resonators by 20%, with values larger than 105 after irradiation.

alpha particles↗
DOE OSTI2018

Target development for {sup 67}Cu, {sup 82}Sr radionuclide production at the RIC-80 facility

A high-current cyclotron C-80 capable of producing 40–80 MeV proton beams with a current of up to 200 μA has been constructed and commissioned at PNPI (Petersburg Nuclear Physics Institute). One of the main goals of cyclotron C-80 is the production of a wide spectrum of medical radionuclides for diagnostics and therapy. To date, the project development of a radioisotope facility RIC-80 (radioisotopes at cyclotron C-80) has been completed. The feature of the project is the use of a mass-separator combined with the ion-target device for obtaining ion beams of radioisotopes with a high purity of separation that is especially important for medical applications. The first results of а new high-temperature method for extracting {sup 82}Sr and {sup 67}Cu radioisotopes from irradiated targets have been presented.

07 ISOTOPE AND RADIATION SOURCES↗
NASA NTRS1983

The damage equivalence of electrons, protons, alphas and gamma rays in rad-hard MOS devices

This paper reports on a study of damage equivalence in rad-hard MOS devices with 100,000 rads (SiO2) capability. Damage sensitivities for electrons of 1, 2, 3, 5, and 7 MeV, protons of 1, 3, 7, 22, and 40 MeV, 3.4-MeV alphas, and Co-60 gammas were measured and compared. Results indicated that qualitatively the same charge recombination effects occurred in hard oxide devices for doses of 100,000 rads (SiO2) as in soft oxide parts for doses of 1 to 4 krads (SiO2). Consequently, damage equivalency or non-equivalency depended on radiation type and energy. However, recovery effects, both during and after irradiation, controlled relative damage sensitivity and its dependency on total dose, dose rate, supply bias, gate bias, radiation type, and energy. Correction factors can be derived from these data or from similar tests of other hard oxide type, so as to properly evaluate the combined effects of the total space environment.

Stassinopoulos, E. G.↗
NASA NTRS1990

Electron beam induced damage in PECVD Si3N4 and SiO2 films on InP

Phosphorus rich plasma enhanced chemical vapor deposition (PECVD) of silicon nitride and silicon dioxide films on n-type indium phosphide (InP) substrates were exposed to electron beam irradiation in the 5 to 40 keV range for the purpose of characterizing the damage induced in the dielectic. The electron beam exposure was on the range of 10(exp -7) to 10(exp -3) C/sq cm. The damage to the devices was characterized by capacitance-voltage (C-V) measurements of the metal insulator semiconductor (MIS) capacitors. These results were compared to results obtained for radiation damage of thermal silicon dioxide on silicon (Si) MOS capacitors with similar exposures. The radiation induced damage in the PECVD silicon nitride films on InP was successfully annealed out in an hydrogen/nitrogen (H2/N2) ambient at 400 C for 15 min. The PECVD silicon dioxide films on InP had the least radiation damage, while the thermal silicon dioxide films on Si had the most radiation damage.

Pantic, Dragan M.↗
DOE OSTI2015

Multipurpose epithermal neutron beam on new research station at MARIA research reactor in Swierk-Poland

MARIA reactor is an open-pool research reactor what gives the chance to install uranium fission converter on the periphery of the core. It could be installed far enough not to induce reactivity of the core but close enough to produce high flux of fast neutrons. Special design of the converter is now under construction. It is planned to set the research stand based on such uranium converter in the near future: in 2015 MARIA reactor infrastructure should be ready (preparation started in 2013), in 2016 the neutron beam starts and in 2017 opening the stand for material and biological research or for medical training concerning BNCT. Unused for many years, horizontal channel number H2 at MARIA research rector in Poland, is going to be prepared as a part of unique stand. The characteristics of the neutron beam will be significant advantage of the facility. High flux of neutrons at the level of 2x10{sup 9} cm{sup -2}s{sup -1} will be obtainable by uranium neutron converter located 90 cm far from the reactor core fuel elements (still inside reactor core basket between so called core reflectors). Due to reaction of core neutrons with converter U{sub 3}Si{sub 2} material it will produce high flux of fast neutrons. After conversion neutrons will be collimated and moderated in the channel by special set of filters and moderators. At the end of H2 channel i.e. at the entrance to the research room neutron energy will be in the epithermal energy range with neutron intensity at least at the level required for BNCT (2x10{sup 9} cm{sup -2}s{sup -1}). For other purposes density of the neutron flux could be smaller. The possibility to change type and amount of installed filters/moderators which enables getting different properties of the beam (neutron energy spectrum, neutron-gamma ratio and beam profile and shape) is taken into account. H2 channel is located in separate room which is adjacent to two other empty rooms under the preparation for research laboratories (200 m2). It is planned to create fully equipped complex facility possible to perform various experiments on the intensive neutron beam. Epithermal neutron beam enables development across the full spectrum of materials research for example shielding concrete tests or electronic devices construction improvement. Due to recent reports on the construction of the accelerator for the Boron Neutron Capture Therapy (BNCT) it has the opportunity to become useful and successful method in the fight against brain and other types of cancers not treated with well known medical methods. In Europe there is no such epithermal neutron source which could be used throughout the year for training and research for scientist working on BNCT what makes the stand unique in Europe. Also our research group which specializes in mixed radiation dosimetry around nuclear and medical facilities would be able to carry out research on new detectors and methods of measurements for radiological protection and in-beam (therapeutic) dosimetry. Another group of scientists from National Centre for Nuclear Research, where MARIA research reactor is located, is involved in research of gamma detector systems. There is an idea to develop Prompt-gamma Single Photon Emission Computed Tomography (Pg- SPECT). This method could be used as imaging system for compounds emitting gamma rays after nuclear reaction with thermal neutrons e.g. for boron concentration in BNCT. Inside the room, where H2 channel is located, there is another horizontal channel - H1 which is also unused. Simultaneously with the construction of the H2 stand it will be possible to create special pneumatic horizontal mail inside the H1 channel for irradiation material samples in the vicinity of the core i.e. in the distal part of the H1 channel. It might expand the scope of research at the planned neutron station. Secondly it is planned to equip both stands with moveable positioning system, video system and facilities to perform animal experiments (anaesthesia, vital signs control, imaging devices, positioning). These all above make constructed station unique in the world (uranium fission converter-based beam) and the only one of such intense neutron beam in the Europe. Moreover implementation of the station would allow the development of research on a number of issues for researchers from all over the Europe. One of very important advantages of the station is undisturbed exploitation of the reactor and other vertical and horizontal channels. MARIA reactor operates 6000 hours per year and that amount of time will be achievable for research on the neutron station. It have to be underlined that new neutron station will work parallel to all another ventures. (authors)

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗
DOE OSTI2024

Magnetic functionalization and catalytic behavior of magnetic nanoparticles during laser photochemical graphitization of polyimide

We report laser-assisted photochemical graphitization of polyimides (PIs) into functional magnetic nanocomposites using laser irradiation of PI in the presence of magnetite nanoparticles (MNPs). PI Kapton sheets covered with MNP were photochemically treated under ambient conditions using a picosecond pulsed laser (1064 nm) to obtain an electrically conductive material. Scanning electron microscopy of the treated material revealed a layered magnetic nanoparticle/graphite (MNP/graphite) nanocomposite structure. Four probe conductivity measurements indicated that the nanocomposite has an electrical conductivity of 1550 ± 60 S/m. Superconducting quantum interference device magnetometer-based magnetic characterization of the treated material revealed an anisotropic ferromagnetic response in the MNP/graphite nanocomposite compared to the isotropic response of MNP. Raman spectroscopy of the MNP/graphite nanocomposite revealed a fourfold improvement in graphitization, suppression in disorder, and decreased nitrogenous impurities compared to the graphitic material obtained from laser treatment of just PI sheets. X-ray photoelectron spectroscopy, x-ray diffraction, and energy-dispersive x-ray spectroscopy were used to delineate the phase transformations of MNP during the formation of MNP/graphite nanocomposite. Post-mortem characterization indicates a possible photocatalytic effect of MNP during MNP/graphite nanocomposite formation. Under laser irradiation, MNP transformed from the initial Fe 3 O 4 phase to γ-Fe 2 O 3 and Fe 5 C 2 phases and acted as nucleation spots to catalyze the graphitization process of PI.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Light-activated photocurrent degradation and self-healing in perovskite solar cells

Solution-processed organometallic perovskite solar cells have emerged as one of the most promising thin-film photovoltaic technology. But, a key challenge is their lack of stability over prolonged solar irradiation. Few studies have investigated the effect of light soaking on hybrid perovskites and have attributed the degradation in the optoelectronic properties to photochemical or field-assisted ion migration. We show that the slow photocurrent degradation in thin-film photovoltaic devices is due to the formation of light-activated meta-stable deep-level trap states. However, the devices can self-heal completely by resting them in the dark for <1 min or the degradation can be completely prevented by operating the devices at 0 °C. Here, we investigate several physical mechanisms to explain the microscopic origin for the formation of these trap states, among which the creation of small polaronic states involving localized cooperative lattice strain and molecular orientations emerges as a credible microscopic mechanism requiring further detailed studies.

14 SOLAR ENERGY↗
NASA NTRS1972

Radiation effects on three low-power microcircuits

Irradiation of several low power circuit elements by Co-60 gamma radiation, low and high energy electrons, and neutrons is discussed. The bipolar circuits were SE480 Q NAND gate, and a micropower frequency divider was used in electronic wrist watches. The MOS device was a dual p-channel MOSFET.

Yamakawa, K. A.↗
NASA NTRS1989

Electron-beam induced damage in thin insulating films on compound semiconductors

Phosphorus rich plasma enhanced chemical vapor deposition (PECVD) of silicon nitride and silicon dioxide films on n-type indium phosphide (InP) substrates were exposed to electron-beam irradiation in the 5 to 40 keV range for the purpose of characterizing the damage induced in the dielectric. The electron-beam exposure was on the range of 10(exp -7) to 10(exp -3) C/sq cm. The damage to the devices was characterized by capacitance-voltage (C-V) measurements of the metal insulator semiconductor (MIS) capacitors. These results were compared to results obtained for radiation damage of thermal silicon dioxide on silicon (Si) MOS capacitors with similar exposures. The radiation induced damage in the PECVD silicon nitride films on InP was successfully annealed out in an hydrogen/nitrogen (H2/N2) ambient at 400 C for 15 min. The PECVD silicon dioxide films on InP had the least radiation damage, while the thermal silicon dioxide films on Si had the most radiation damage.

Pantic, Dragan M.↗
DOE OSTI2025

Modulating Oxide‐Based Quantum Materials by Ion Implantation

Ion implantation has emerged as a powerful tool for manipulating and investigating oxide quantum materials, where strong electron correlations give rise to exotic phases and functionalities. This Review examines how controlled ion bombardment enables targeted modulation of structural, electronic, and magnetic properties in complex oxides. Recent advances in ion beam techniques is analyzed that provide unprecedented control over defect profiles, from point defects to extended damage cascades. In application, ion irradiation has demonstrated the ability to tune quantum phenomena including metal‐insulator transitions, magnetism, and superconductivity through selective doping, defect creation, and lattice strain. The ability to write quantum states with nanoscale precision using focused ion beams is opening new paths for quantum device fabrication. Challenges in understanding radiation damage mechanisms in strongly correlated systems is discussed, and identify opportunities for designing quantum functionality through defect‐engineering approaches. The technique's demonstrated capability to write quantum states with nanoscale precision, combined with its compatibility with existing semiconductor processing infrastructure, suggests a clear pathway for translating fundamental discoveries in quantum materials into practical technological applications.

defect engineering↗
DOE OSTI2016

Changes in electrical properties of MOS transistor induced by single 14 MeV neutron

Neutron radiation causes significant changes in the characteristics of MOS devices by the creation of oxide-trapped charge and interface traps. The degradation of the current gain of the GF4936 dual n-channel depletion mode MOS transistor, caused by neutron displacement defects, was measured using in-situ method during neutron irradiation. The average degradation of the gain current is 35 mA at maximum fluence of 2.0 × 10{sup 10} n/cm2 while with an average of 25 mA at minimum fluence of 5.0 × 10{sup 8} n/cm{sup 2}. The change in channel current gain increased proportionally with neutron fluence, meanwhile drain saturation current decreased proportionally with the neutron fluence.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Focused-helium-ion-beam blow forming of nanostructures: radiation damage and nanofabrication

Targeted irradiation of nanostructures by a finely focused ion beam provides routes to improved control of material modification and understanding of the physics of interactions between ion beams and nanomaterials. Here, we studied radiation damage in crystalline diamond and silicon nanostructures using a focused helium ion beam, with the former exhibiting extremely long-range ion propagation and large plastic deformation in a process visibly analogous to blow forming. We report significant dependence of damage morphology on material, geometry, and irradiation conditions (ion dose, ion energy, ion species, and location). In this work, we suggest that our approach and findings will not only improve the understanding of radiation damage in isolated nanostructures, but will also support the design of new engineering materials and devices for current and future applications in nanotechnology.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2024

Computational Exploration of High Entropy Alloys as Promising Materials for Future Beam Windows

With the ever-increasing demand for high beam power, the currently used beam-intercepting devices (BIDs) such as targets, and beam windows may not be able to handle the high power required for future accelerator complexes or the lifetime may be reduced drastically. As beam power increases, the damage incurred by BIDs, including thermal shock, fatigue, and irradiation damage, also rises. Therefore, it is imperative to design materials that can withstand high beam power for longer lifetimes. High entropy alloys (HEAs) have emerged as potential alternative materials for designing next-generation BIDs. In this study, we primarily focus on materials for developing beam windows for next-generation accelerator complexes. We propose an integrated approach that combines various computational techniques to study and design new materials. Specifically, we use CALPHAD, density functional theory (DFT), and molecular dynamics (MD) to comprehensively investigate the defect properties of suitable HEAs, offering potential alternatives for future beam windows. We begin by scanning the extensive phase space provided by Cr-Mn-V-Ti-Al-Co HEAs, selecting 8 compositions after evaluating approximately 120,000 unique compositions using CALPHAD. We, then employ DFT-informed machine learning techniques to develop force-field parameters. Finally, MD simulations using these developed force-field parameters will be used to study the effects of radiation damage on the defect and mechanical properties of the selected alloys. This research explains the use of the CALPHAD approach and shows how critical modeling (DFT and MD) is in developing novel material such as HEAs. It also highlights the promising role of machine learning in this field. The results from this study will greatly improve the novel materials development to be used in next-generation accelerator components, leading to higher beam power and longer operational times of BIDs.

43 PARTICLE ACCELERATORS↗
DOE OSTI2021

High-resolution x-ray radiography with Fresnel zone plates on the University of Rochester’s OMEGA Laser Systems

Experiments performed at the Laboratory for Laser Energetics with a continuous-wave (cw) x-ray source and on the OMEGA and OMEGA EP Laser Systems have utilized a Fresnel zone plate (FZP) to obtain x-ray images with a spatial resolution as small as ~1.5 μm. Such FZP images were obtained with a charge-coupled device or a framing camera at energies ranging from 4.5 keV to 6.7 keV using x-ray line emission from both the cw source and high-intensity, laser-beam–illuminated metal foils. In all cases, the resolution test results are determined from patterns and grids backlit by these sources. Here, the resolutions obtained are shown to be due to a combination of the spectral content of the x-ray sources and detector resolution limited by the magnification of the images (14× to 22×). High-speed framing cameras were used to obtain FZP images with frame times as short as ~30 ps. Double-shell implosions on OMEGA were backlit by laser-irradiated Fe foils, thus obtaining a framing-camera–limited, FZP-image resolution of ~3 μm–4 μm.

47 OTHER INSTRUMENTATION↗