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75 records · Page 5

Correlated States of 2D Electrons near the Landau Level Filling ν = 1 / 7

The ground state of two-dimensional electron systems (2DESs) at low Landau level filling factors ( ν ≲ 1 / 6 ) has long been a topic of interest and controversy in condensed matter. Following the recent breakthrough in the quality of ultrahigh-mobility GaAs 2DESs, we revisit this problem experimentally and investigate the impact of reduced disorder. In a GaAs 2DES sample with density n = 6.1 × 10 10 / cm 2 and mobility μ = 25 × 10 6 cm 2 / V s , we find a deep minimum in the longitudinal magnetoresistance ( R x x ) at ν = 1 / 7 when T ≃ 104 mK . There is also a clear sign of a developing minimum in R x x at ν = 2 / 13 . While insulating phases are still predominant when ν ≲ 1 / 6 , these minima strongly suggest the existence of fractional quantum Hall states at filling factors that comply with the Jain sequence ν = p / ( 2 m p ± 1 ) even in the very low Landau level filling limit. The magnetic-field-dependent activation energies deduced from the relation R x x ∝ e E A / 2 k T corroborate this view and imply the presence of pinned Wigner solid states when ν ≠ p / ( 2 m p ± 1 ) . Similar results are seen in another sample with a lower density, further generalizing our observations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Lithography-Defined Semiconductor Moirés with Anomalous In-Gap Quantum Hall States

Quantum materials and phenomena have attracted great interest for their potential applications in next-generation microelectronics and quantum-information technologies. In one especially interesting class of quantum materials, moiré superlattices (MSLs) formed by twisted bilayers of 2D materials, a wide range of novel phenomena are observed. However, there exist daunting challenges such as reproducibility and scalability of utilizing 2D MSLs for microelectronics and quantum technologies due to their exfoliate-tear-stack method. Here, we propose lithography-defined semiconductor MSLs, in which three fundamental parameters electron−electron interaction, spin−orbit coupling, and band topology are designable. We experimentally investigate quantum-transport properties in a moiré specimen made in an InAs quantum well. Strong anomalous in-gap states are observed within the same integer quantum Hall state. Our work opens up new horizons for studying 2D quantum-materials phenomena in semiconductors featuring superior industry-level quality and state-of-the-art technologies, and they may potentially enable new quantum-information and microelectronics technologies.

36 MATERIALS SCIENCE↗

Nanoscale Imaging of Magnetotransport around a Circular 𝑝−𝑛 Junction in Graphene

Magnetoresistance studies of 2D systems are often shaped by the motion of electrons that occupy spatially confined wave functions, such as topological edge modes and disorder-induced bound states. Directly probing how such states form and behave in situ , under applied currents, provides a clear way of connecting microscopic physics to the macroscopic transport response. Here, in this Letter, scanning tunneling potentiometry is used to probe the local, current-induced electrochemical potential of carriers in graphene near circular 𝑝−𝑛 junctions in an out-of-plane magnetic field ranging from 0 to 1.4 T. These measurements provide detailed information about the motion of carriers at the nanometer scale, revealing how it evolves with increasing field. The electrochemical potential displays distinct patterns, such as dipoles, spirals, and concentric disks in weak, moderate, and high fields, respectively. The size and orientation of these patterns can be used to understand how local carrier dynamics change in different transport regimes as well as to directly extract physical parameters such as the electron mean free path and cyclotron diameter.

36 MATERIALS SCIENCE↗