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At least 91 records · Page 5

TPSAS-NF1676L-34417-DND

A boron nitride nanotube (BNNT), an electrically-insulating counterpart of a carbon nanotube (CNT), is a great nanofiller candidate for ferroelectric polymeric nanocomposites due to BNNT?s exceptional properties in piezoelectricity, thermal stability, mechanical strength, and radiation shielding capability. Fast and high-yield polar crystallization of polyvinylidene fluoride (PVDF) was accomplished by incorporating BNNTs as a nucleating agent. As-fabricated BNNT-PVDF nanocomposites were characterized by Fourier-transform infrared spectroscopy (FTIR), wide-angle X-ray diffraction (XRD), and differential scanning calorimetry (DSC) to identify and quantify chain conformations. Besides, piezoelectric constants, d33 of BNNT-PVDF nanocomposites were measured and compared with that of a mechanically drawn beta phase polar PVDF. The polar transformation due to BNNT incorporation has a great advantage over conventional beta or gamma transformation methods that require (1) mechanical drawing often resulting in defects or (2) high-temperature annealing for an extended time. In addition to the fast polar crystallization, BNNTs had a role of reinforcement of the polymer matrix. The improved Young?s modulus and electromechanical coupling coefficient of BNNT-PVDF nanocomposites indicated potential applications in energy harvesting under harsh environments such as large deformation, wide temperature cycles, and high radiation.

Dongwon Lee↗

Annealing characteristics of irradiated hydrogenated amorphous silicon solar cells

It was shown that 1 MeV proton irradiation with fluences of 1.25E14 and 1.25E15/sq cm reduces the normalized I(sub SC) of a-Si:H solar cell. Solar cells recently fabricated showed superior radiation tolerance compared with cells fabricated four years ago; the improvement is probably due to the fact that the new cells are thinner and fabricated from improved materials. Room temperature annealing was observed for the first time in both new and old cells. New cells anneal at a faster rate than old cells for the same fluence. From the annealing work it is apparent that there are at least two types of defects and/or annealing mechanisms. One cell had improved I-V characteristics following irradiation as compared to the virgin cell. The work shows that the photothermal deflection spectroscopy (PDS) and annealing measurements may be used to predict the qualitative behavior of a-Si:H solar cells. It was anticipated that the modeling work will quantitatively link thin film measurements with solar cell properties. Quantitative predictions of the operation of a-Si:H solar cells in a space environment will require a knowledge of the defect creation mechanisms, defect structures, role of defects on degradation, and defect passivation and annealing mechanisms. The engineering data and knowledge base for justifying space flight testing of a-Si:H alloy based solar cells is being developed.

Payson, J. S.↗

Precise Frequency Measurements Using a Superconducting Cavity Stabilized Oscillator

Many physics experiments call on improved resolution to better define the experimental results, thus improving tests of theories. Modern microwave technology combined with high-Q resonators can achieve frequency readout and control with resolutions up to a part in 10(exp 18). When the physical quantity in question in the experiment can be converted to a frequency or a change in frequency, a high-stability microwave oscillator can be applied to obtain state-of-the-art precision. In this work we describe the overall physical concepts and the required experimental procedures for optimizing a high-resolution frequency measurement system that employs a high-Q superconducting microwave cavity and a low-noise frequency synthesizer. The basic approach is to resolve the resonant frequencies of a high-Q (Q > 10(exp 10)) cavity to extremely high precision (one part in 10(exp 17)- 10(exp 18)). Techniques for locking the synthesizer frequency to a resonant frequency of the superconducting cavity to form an ultra-stable oscillator are described. We have recently set up an ultra-high-vacuum high-temperature annealing system to process superconducting niobium cavities, and have been able to consistently achieve Q > 10(exp 9). We have integrated high-Q superconducting cavities with a low-noise microwave synthesizer in a phase-locked-loop to verify the frequency stability of the system. Effects that disturb the cavity resonant frequency (such as the temperature fluctuations and mechanical vibrations) and methods to mitigate those effects are also considered. Applicability of these techniques to experiments will be discussed, and our latest experimental progress in achieving high-resolution frequency measurements using the superconducting-cavity-stabilized-oscillator will be presented.

Strayer, D. M.↗

Interfacial chemical reactions between MoS2 lubricants and bearing materials

XPS and conversion-electron Moessbauer spectroscopy (CEMS) were used to examine iron that was deposited on the basal plane of MoS2 single crystals and subjected to vacuum annealing, oxidizing, and reducing environments. Iron either intercalated into the MoS2 structure or formed oriented iron sulfides, depending on the level of excess S in the MoS2 structure. CEMS data demonstrated that iron sulfide crystal structures preferentially aligned with respect to the MoS2 basal plane, and that alignment (and potentially adhesion) could be varied by appropriate high-temperature annealing procedures.

Zabinski, J. S.↗

Direct measurement of free-energy barrier to nucleation of crystallites in amorphous silicon thin films

A method is introduced to measure the free-energy barrier W(sup *), the activation energy, and activation entropy to nucleation of crystallites in amorphous solids, independent of the energy barrier to growth. The method allows one to determine the temperature dependence of W(sup *), and the effect of the preparation conditions of the initial amorphous phase, the dopants, and the crystallization methds on W(sup *). The method is applied to determine the free-energy barrier to nucleation of crystallites in amorphous silicon (a-Si) thin films. For thermally induced nucleation in a-Si thin films with annealing temperatures in the range of from 824 to 983 K, the free-energy barrier W(sup *) to nucleation of silicon crystals is about 2.0 - 2.1 eV regardless of the preparation conditions of the films. The observation supports the idea that a-Si transforms into an intermediate amorphous state through the structural relaxation prior to the onset of nucleation of crystallites in a-Si. The observation also indicates that the activation entropy may be an insignificant part of the free-energy barrier for the nucleation of crystallites in a-Si. Compared with the free-energy barrier to nucleation of crystallites in undoped a-Si films, a significant reduction is observed in the free-energy barrier to nucleation in Cu-doped a-Si films. For a-Si under irradiation of Xe(2+) at 10(exp 5) eV, the free-energy barrier to ion-induced nucleation of crystallites is shown to be about half of the value associated with thermal-induced nucleation of crystallites in a-Si under the otherwise same conditions, which is much more significant than previously expected. The present method has a general kinetic basis; it thus should be equally applicable to nucleation of crystallites in any amorphous elemental semiconductors and semiconductor alloys, metallic and polymeric glasses, and to nucleation of crystallites in melts and solutions.

Shi, Frank G.↗

Abnormal grain growth in TD-nickel.

Characteristics of the coarse grain transformation occurring in TD-nickel 1 in. bar under certain conditions of deformation and annealing were examined. The transformation exhibits Avrami-type kinetics, with an activation energy of 250 kcal per mole. Characteristics of untransformed regions are like those of the as-received state. The transformed grain size increases with increasing deformation and decreasing annealing temperature. The coarse grain transformation is significantly different from primary recrystallization in pure nickel. Its characteristics cannot be rationalized in terms of primary recrystallization concepts, but may be explained in terms of an abnormal grain growth description. The coarse grain transformation in TD-nickel is abnormal grain growth rather than primary recrystallization. The analysis suggests an explanation for the effect of thermomechanical history on the deformation and annealing behavior of TD-nickel.

Petrovic, J. J.↗

Method for fabricating semiconductor devices

A process for fabricating gold/gallium arsenide structures, in situ, on molecular beam epitaxially grown gallium arsenide. The resulting interface proves to be Ohmic, an unexpected result which is interpreted in terms of increased electrode interdiffusion. More importantly, the present invention surprisingly permits the fabrication of Ohmic contacts in a III-V semiconductor material at room temperature. Although it may be desireable to heat the Ohmic contact to a temperature of, for example, 200 degrees Centigrade if one wishes to further decrease the resistance of the contact, such low temperature annealing is much less likely to have any deleterious affect on the underlying substrate. The use of the term in situ herein, contemplates continuously maintaining an ultra-high vacuum, that is a vacuum which is at least 10.sup.-8 Torr, until after the metallization has been completed. An alternative embodiment of the present invention comprising an additional step, namely the termination of the gallium arsenide by a two monolayer thickness of epitaxial aluminum arsenide as a diffusion barrier, enables the recovery of Schottky barrier behavior, namely a rectified I-V characteristic. The present invention provides a significant breakthrough in the fabrication of III-V semiconductor devices wherein excellent Ohmic contact and Schottky barrier interfaces to such devices can be achieved simply and inexpensively and without requiring the high temperature processing of the prior art and also without requiring the use of exotic high temperature refractory materials as substitutes for those preferred contact metals such as gold, aluminum and the like.

Kaiser, William J.↗

Correlations Among Microstructure, Morphology, Chemistry, and Isotopic Systematics of Hibonite in CM Chondrites

Introduction: Hibonite is a primary refractory phase occurring in many CAIs, typically with spinel and perovskite. Our microstructural studies of CAIs from carbonaceous chondrites reveal a range of stacking defect densities and correlated non-stoichiometry in hibonite. We also conducted a series of annealing experiments, demonstrating that the Mg-Al substitution stabilized the formation of defect-structured hibonite. Here, we continue a detailed TEM analysis of hibonite-bearing inclusions from CM chondrites that have been well-characterized isotopically. We examine possible correlations of microstructure, morphology, mineralogy, and chemical and isotopic systematics of CM hibonites in order to better understand the formation history of hibonite in the early solar nebula. Methods: Fifteen hibonite-bearing inclusions from the Paris CM chondrite were analyzed using a JEOL 7600F SEM and a JEOL 8530F electron microprobe. In addition to three hibonite-bearing inclusions from the Murchison CM chondrite previously reported, we selected three inclusions from Paris, Pmt1-6, 1-9, and 1-10, representing a range of 26Al/27Al ratios and minor element concentrations for a detailed TEM study. We extracted TEM sections from hibonite grains using a FEI Quanta 3D field emission gun SEM/FIB. The sections were then examined using a JEOL 2500SE field-emission scanning TEM equipped with a Thermo-Noran thin window EDX spectrometer. Results and Discussion: A total of six hibonite-bearing inclusions, including two platy hibonite crystals (PLACs) and four spinel-hibonite inclusions (SHIBs), were studied. There are notable differences in chemical and isotopic compositions between the inclusions (Table 1), indicative of their different formation environment or timing. Our TEM observations show perfectly-ordered, stoichiometric hibonite crystals without stacking defects in two PLACs, 2-7-1 and 2-8-2, and in three SHIBs, Pmt1-6, 1-9, and 1-10. In contrast, SHIB 1-9-5 hibonite grains contain a low density of stacking defects linked to an increase in MgO contents, indicating complex, disordered intergrowths of stoichiometric and MgO-enriched hibonites. From the data collected to date, we find no clear correlation between the microstructures of hibonite and its morphological and mineralogical types that reflect distinct chemical and isotopic systematics [6-8,10]. Interestingly, the presence of no or few stacking defects in hibonite from the PLACs and SHIBs are in contrast to our experimental studies that produced very high densities of stacking defects in hibonite [3-5]. Unlike our experi-ments, electron microprobe data from the PLACs and SHIBs hibonite grains show a strong correlation between (Ti4++Si4+) and Mg2+ cations, suggesting that coupled substitutions of (Ti4++Mg2+) and (Si4++Mg2+) for 2Al3+ inhibit the formation of defect-structured hibonite. However, our experimental studies suggest that kinetics (e.g., cooling rate) or other thermal effects also exert a strong control on the microstructures and chemical compositions of hibonite. In Pmt1-6, elongated perovskite grains present at the hibonite grain boundaries display (121) twinning, indicative of a fast cooling (>50degC/min) after high-temperature events. Therefore, the nebular microstructural characteristics of hibonite, at least in this inclusion, would not have destroyed by subsequent high-temperature annealing. Conclusions: Our TEM observations thus far show no clear correlation in microstructures, morphological and mineralogical characteristics, and chemical and isotopic systematics of hibonites from CM chondrites. The observed variation in stacking defect densities in the hibonites may be controlled by thermal processes in the early solar nebula. A detailed TEM analysis of additional CM hibonite samples is underway to evaluate this hypothesis.

Han, J.↗

Ion implantation damage effects in silicon

Ion implantation lattice damage effects in crystalline silicon with allowance for optical reflectivity, considering annealing temperature and amorphous layer formation

Eberle, D. E.↗

Ordering in CuAu

Rapidly quenched CuAu ordered state development on low temperature annealing, presenting Young modulus variation as function of heat treatment time

Brotzen, F. R.↗

Optical absorption in fused silica at elevated temperatures during 1.5-MeV electron irradiation

An experimental determination of the optical transmission of Corning 7940 UV and Suprasil 1 and 2 fused silica has been made during 1.5-MeV electron bombardment. The fused silica reached temperatures ranging from 150 to 1000 C. The Lewis Research Center dynamitron provided electron current densities which corresponded to a dose rate of 2.6 to 20 Mrad/sec. The irradiation induced absorption was measured at 215.0, 270.0, and 450.0 nm (2150, 2700, 4500 A). The length of each irradiation was sufficient so that an equilibrium between radiation induced coloration and high temperature annealing was reached. The experimental results indicate a significant optical absorption, with values of the induced absorption coefficient at 215.0 nm (2150 A) of 14.5 to 2.2/cm, at 270.0 nm (2700 A) of 9.7 to 3.0/cm and at 450.0 nm (4500 A) of 3.7 to 0.5/cm. This would make the use of fused silica as the separating wall material in the nuclear light bulb propulsion concept questionable.

Smith, A. B.↗